JP2006332614A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006332614A5 JP2006332614A5 JP2006117481A JP2006117481A JP2006332614A5 JP 2006332614 A5 JP2006332614 A5 JP 2006332614A5 JP 2006117481 A JP2006117481 A JP 2006117481A JP 2006117481 A JP2006117481 A JP 2006117481A JP 2006332614 A5 JP2006332614 A5 JP 2006332614A5
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- gate electrode
- organic transistor
- organic
- gate insulating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 12
- 239000002131 composite material Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 6
- 239000000463 material Substances 0.000 claims 6
- 229910044991 metal oxide Inorganic materials 0.000 claims 5
- 150000004706 metal oxides Chemical class 0.000 claims 5
- 238000000034 method Methods 0.000 claims 5
- 150000002894 organic compounds Chemical class 0.000 claims 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 229910052750 molybdenum Inorganic materials 0.000 claims 4
- 239000011733 molybdenum Substances 0.000 claims 4
- 229910052758 niobium Inorganic materials 0.000 claims 4
- 239000010955 niobium Substances 0.000 claims 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 4
- 238000009832 plasma treatment Methods 0.000 claims 4
- 229910052715 tantalum Inorganic materials 0.000 claims 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- 150000004982 aromatic amines Chemical group 0.000 claims 2
- 229910052804 chromium Inorganic materials 0.000 claims 2
- 239000011651 chromium Substances 0.000 claims 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 239000010949 copper Substances 0.000 claims 2
- 229910052735 hafnium Inorganic materials 0.000 claims 2
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 2
- 229910052702 rhenium Inorganic materials 0.000 claims 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 2
- 229910052721 tungsten Inorganic materials 0.000 claims 2
- 239000010937 tungsten Substances 0.000 claims 2
- 229910052720 vanadium Inorganic materials 0.000 claims 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 2
- 229910052726 zirconium Inorganic materials 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006117481A JP2006332614A (ja) | 2005-04-25 | 2006-04-21 | 半導体装置、有機トランジスタ及びその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005125930 | 2005-04-25 | ||
| JP2006117481A JP2006332614A (ja) | 2005-04-25 | 2006-04-21 | 半導体装置、有機トランジスタ及びその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006332614A JP2006332614A (ja) | 2006-12-07 |
| JP2006332614A5 true JP2006332614A5 (zh) | 2009-05-28 |
Family
ID=37553926
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006117481A Withdrawn JP2006332614A (ja) | 2005-04-25 | 2006-04-21 | 半導体装置、有機トランジスタ及びその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006332614A (zh) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006126363A1 (en) | 2005-04-22 | 2006-11-30 | Semiconductor Energy Laboratory Co., Ltd. | Electrode for organic transistor, organic transistor, and semiconductor device |
| KR101381365B1 (ko) | 2006-01-26 | 2014-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유기 전계효과 트랜지스터 및 반도체장치 |
| JP2007250715A (ja) * | 2006-03-15 | 2007-09-27 | Konica Minolta Holdings Inc | 半導体デバイスの製造方法 |
| GB2455096B (en) * | 2007-11-27 | 2011-11-02 | Cambridge Display Tech Ltd | Organic thin film transistors and methods of making the same |
| JP5477841B2 (ja) * | 2009-05-11 | 2014-04-23 | 健一 中山 | トランジスタ素子 |
| KR101587097B1 (ko) * | 2009-09-30 | 2016-01-21 | 엘지디스플레이 주식회사 | 유기전계발광소자의 제조방법 |
| WO2011077946A1 (en) | 2009-12-25 | 2011-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP2011165778A (ja) * | 2010-02-08 | 2011-08-25 | Nippon Hoso Kyokai <Nhk> | ｐ型有機薄膜トランジスタ、ｐ型有機薄膜トランジスタの製造方法、および、塗布溶液 |
| KR101830170B1 (ko) | 2011-05-17 | 2018-02-21 | 삼성디스플레이 주식회사 | 산화물 반도체 소자, 산화물 반도체 소자의 제조 방법, 산화물 반도체소자를 포함하는 표시 장치 및 산화물 반도체 소자를 포함하는 표시 장치의 제조 방법 |
| US11848503B2 (en) * | 2018-12-12 | 2023-12-19 | Sharp Kabushiki Kaisha | Scanning antenna and method for manufacturing scanning antenna |
| JP7206887B2 (ja) * | 2018-12-19 | 2023-01-18 | 凸版印刷株式会社 | 有機薄膜トランジスタおよび電子装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06338492A (ja) * | 1993-05-31 | 1994-12-06 | Matsushita Electric Ind Co Ltd | 絶縁膜の形成方法、および薄膜トランジスタ用ゲート絶縁膜の製造方法 |
| JP4184686B2 (ja) * | 2001-03-28 | 2008-11-19 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2003133550A (ja) * | 2001-07-18 | 2003-05-09 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
| WO2003015151A1 (en) * | 2001-08-02 | 2003-02-20 | Tokyo Electron Limited | Base material treating method and electron device-use material |
| JP3823312B2 (ja) * | 2001-10-18 | 2006-09-20 | 日本電気株式会社 | 有機薄膜トランジスタ |
| JP2004107651A (ja) * | 2002-08-26 | 2004-04-08 | Sharp Corp | デンドリック高分子及びこれを用いた電子デバイス素子 |
| JP4471571B2 (ja) * | 2003-01-28 | 2010-06-02 | 大日本印刷株式会社 | 有機半導体素子、有機半導体装置、有機エレクトロルミネッセンス素子および有機エレクトロルミネッセンス装置 |
| JP3742906B2 (ja) * | 2003-05-08 | 2006-02-08 | シャープ株式会社 | 半導体装置の製造方法 |
| JP4358563B2 (ja) * | 2003-07-02 | 2009-11-04 | 東京エレクトロン株式会社 | 半導体装置の低誘電率絶縁膜形成方法 |
| JP4586345B2 (ja) * | 2003-09-17 | 2010-11-24 | ソニー株式会社 | 電界効果型トランジスタ |
-
2006
- 2006-04-21 JP JP2006117481A patent/JP2006332614A/ja not_active Withdrawn
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2006332614A5 (zh) | ||
| CN102290441B (zh) | 半导体器件及其制造方法 | |
| KR100402671B1 (ko) | 반도체 장치 및 그 제조 방법 | |
| JP5711146B2 (ja) | 金属酸化物半導体薄膜トランジスタにおける安定性の向上 | |
| KR102232755B1 (ko) | 2차원 물질을 이용한 전자소자 및 그 제조 방법 | |
| JP2007537595A5 (zh) | ||
| US7442588B2 (en) | Method for fabricating thin film transistor using local oxidation and transparent thin film transistor | |
| JP2009503817A5 (zh) | ||
| KR101715355B1 (ko) | 그래핀 전자 소자 | |
| JP2009538542A5 (zh) | ||
| TWI479603B (zh) | 用於整合射頻／類比系統單晶片應用之奈米管裝置與互補金屬氧化物半導體之方法 | |
| TW200609997A (en) | Semiconductor process and integrated circuit having dual metal oxide gate dielectric with single metal gate electrode | |
| TW200703468A (en) | Semiconductor device and method for manufacturing the same | |
| DE102019128268A1 (de) | Verfahren zum reduzieren von durchschlagausfällen in einem mim-kondensator | |
| JP2005311325A5 (zh) | ||
| JP2009176997A5 (zh) | ||
| US20170294583A1 (en) | Carbon nanotube semiconductor device and manufacturing method thereof | |
| TW201133846A (en) | Dual dielectric tri-gate field effect transistor | |
| JP2007150156A (ja) | トランジスタおよびその製造方法 | |
| JP2006332604A5 (zh) | ||
| TW200731589A (en) | Organic thin film transistor using ultra-thin metal oxide as gate dielectric and fabrication method thereof | |
| JP2006332603A5 (zh) | ||
| TWI460856B (zh) | 電子元件及其製造方法 | |
| US20090250731A1 (en) | Field-effect transistor structure and fabrication method thereof | |
| KR102103428B1 (ko) | 박막 트랜지스터를 제조하는 방법, 박막 트랜지스터 및 디스플레이 장치 |