JP2006332603A5 - - Google Patents
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- Publication number
- JP2006332603A5 JP2006332603A5 JP2006102623A JP2006102623A JP2006332603A5 JP 2006332603 A5 JP2006332603 A5 JP 2006332603A5 JP 2006102623 A JP2006102623 A JP 2006102623A JP 2006102623 A JP2006102623 A JP 2006102623A JP 2006332603 A5 JP2006332603 A5 JP 2006332603A5
- Authority
- JP
- Japan
- Prior art keywords
- gate electrode
- forming
- island
- shaped semiconductor
- semiconductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006102623A JP4719054B2 (ja) | 2005-04-28 | 2006-04-04 | 薄膜トランジスタの作製方法 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005133661 | 2005-04-28 | ||
JP2005133661 | 2005-04-28 | ||
JP2006102623A JP4719054B2 (ja) | 2005-04-28 | 2006-04-04 | 薄膜トランジスタの作製方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006332603A JP2006332603A (ja) | 2006-12-07 |
JP2006332603A5 true JP2006332603A5 (sr) | 2009-03-12 |
JP4719054B2 JP4719054B2 (ja) | 2011-07-06 |
Family
ID=37553917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006102623A Expired - Fee Related JP4719054B2 (ja) | 2005-04-28 | 2006-04-04 | 薄膜トランジスタの作製方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4719054B2 (sr) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009049207A (ja) * | 2007-08-20 | 2009-03-05 | Spansion Llc | 半導体装置の製造方法 |
US8446010B2 (en) | 2008-04-25 | 2013-05-21 | Sharp Kabushiki Kaisha | Multilayer wiring, semiconductor device, substrate for display device, and display device |
US8592879B2 (en) | 2010-09-13 | 2013-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
KR20180079503A (ko) * | 2016-12-30 | 2018-07-11 | 삼성디스플레이 주식회사 | 도전 패턴 및 이를 구비하는 표시 장치 |
CN110313057A (zh) * | 2017-02-28 | 2019-10-08 | 夏普株式会社 | 有源矩阵基板的制造方法和有机el显示装置的制造方法 |
WO2018163287A1 (ja) * | 2017-03-07 | 2018-09-13 | シャープ株式会社 | アクティブマトリクス基板の製造方法、有機el表示装置の製造方法およびアクティブマトリクス基板 |
CN107910327B (zh) * | 2017-11-07 | 2024-05-14 | 长鑫存储技术有限公司 | 电容器阵列结构及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06112222A (ja) * | 1992-09-28 | 1994-04-22 | Seiko Epson Corp | 薄膜半導体装置及びその製造方法 |
JP4197270B2 (ja) * | 1994-04-29 | 2008-12-17 | 株式会社半導体エネルギー研究所 | 半導体集積回路の作製方法 |
US6357385B1 (en) * | 1997-01-29 | 2002-03-19 | Tadahiro Ohmi | Plasma device |
-
2006
- 2006-04-04 JP JP2006102623A patent/JP4719054B2/ja not_active Expired - Fee Related
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