JP2006332603A5 - - Google Patents

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Publication number
JP2006332603A5
JP2006332603A5 JP2006102623A JP2006102623A JP2006332603A5 JP 2006332603 A5 JP2006332603 A5 JP 2006332603A5 JP 2006102623 A JP2006102623 A JP 2006102623A JP 2006102623 A JP2006102623 A JP 2006102623A JP 2006332603 A5 JP2006332603 A5 JP 2006332603A5
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JP
Japan
Prior art keywords
gate electrode
forming
island
shaped semiconductor
semiconductor film
Prior art date
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Application number
JP2006102623A
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English (en)
Japanese (ja)
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JP4719054B2 (ja
JP2006332603A (ja
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Priority to JP2006102623A priority Critical patent/JP4719054B2/ja
Priority claimed from JP2006102623A external-priority patent/JP4719054B2/ja
Publication of JP2006332603A publication Critical patent/JP2006332603A/ja
Publication of JP2006332603A5 publication Critical patent/JP2006332603A5/ja
Application granted granted Critical
Publication of JP4719054B2 publication Critical patent/JP4719054B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006102623A 2005-04-28 2006-04-04 薄膜トランジスタの作製方法 Expired - Fee Related JP4719054B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006102623A JP4719054B2 (ja) 2005-04-28 2006-04-04 薄膜トランジスタの作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005133661 2005-04-28
JP2005133661 2005-04-28
JP2006102623A JP4719054B2 (ja) 2005-04-28 2006-04-04 薄膜トランジスタの作製方法

Publications (3)

Publication Number Publication Date
JP2006332603A JP2006332603A (ja) 2006-12-07
JP2006332603A5 true JP2006332603A5 (pt) 2009-03-12
JP4719054B2 JP4719054B2 (ja) 2011-07-06

Family

ID=37553917

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006102623A Expired - Fee Related JP4719054B2 (ja) 2005-04-28 2006-04-04 薄膜トランジスタの作製方法

Country Status (1)

Country Link
JP (1) JP4719054B2 (pt)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009049207A (ja) * 2007-08-20 2009-03-05 Spansion Llc 半導体装置の製造方法
CN101978480B (zh) * 2008-04-25 2012-05-02 夏普株式会社 多层配线、半导体装置、显示装置用基板和显示装置
US8592879B2 (en) 2010-09-13 2013-11-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR20180079503A (ko) * 2016-12-30 2018-07-11 삼성디스플레이 주식회사 도전 패턴 및 이를 구비하는 표시 장치
WO2018158840A1 (ja) * 2017-02-28 2018-09-07 シャープ株式会社 アクティブマトリクス基板の製造方法および有機ｅｌ表示装置の製造方法
WO2018163287A1 (ja) * 2017-03-07 2018-09-13 シャープ株式会社 アクティブマトリクス基板の製造方法、有機ｅｌ表示装置の製造方法およびアクティブマトリクス基板
CN107910327B (zh) * 2017-11-07 2024-05-14 长鑫存储技术有限公司 电容器阵列结构及其制造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06112222A (ja) * 1992-09-28 1994-04-22 Seiko Epson Corp 薄膜半導体装置及びその製造方法
JP4197270B2 (ja) * 1994-04-29 2008-12-17 株式会社半導体エネルギー研究所 半導体集積回路の作製方法
US6357385B1 (en) * 1997-01-29 2002-03-19 Tadahiro Ohmi Plasma device

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