JP2006307253A - Implement for electroplating and electroplating method - Google Patents

Implement for electroplating and electroplating method Download PDF

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JP2006307253A
JP2006307253A JP2005128873A JP2005128873A JP2006307253A JP 2006307253 A JP2006307253 A JP 2006307253A JP 2005128873 A JP2005128873 A JP 2005128873A JP 2005128873 A JP2005128873 A JP 2005128873A JP 2006307253 A JP2006307253 A JP 2006307253A
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wafer
electrolytic plating
jig
electroplating
multilayer substrate
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JP4654065B2 (en
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Isao Yamauchi
勇生 山内
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Shinko Electric Industries Co Ltd
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Shinko Electric Industries Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide an implement for electroplating which can be recycled when a plurality of wafers each having the same size and the same shape are electroplated, which is easily adaptive to a change in the size or the like of the wafer and can uniformize the current density on one surface of the wafer to be electroplated to the utmost. <P>SOLUTION: The implement for electroplating is a multilayer substrate 12 formed by layering substrates 12a, 12b, 12c and having metallic layers formed on both surfaces. In a wafer housing hole 14 formed in the multilayer substrate 12, a flange part 16 projected inward along the inside wall surface of the wafer housing hole14 is formed so that, when the wafer is housed in the wafer housing hole 14, the flange part 16 abuts on one surface side on the peripheral part of which a bus line for electroplating the wafer is formed and thus supports the wafer, and each of a plurality of pads 18 formed on one surface side of the flange part 16 and abutted on the electroplating bus line is electrically connected to the metallic layers forming both surfaces of the multilayer substrate 12. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は電解めっき用治具及び電解めっき方法に関する。更に詳細には、電解めっきが施される一面側の周縁に電解めっき用バスラインが設けられたウェーハを収容して電解めっきを施す電解めっき用治具及び電解めっき方法に関する。   The present invention relates to an electrolytic plating jig and an electrolytic plating method. More specifically, the present invention relates to an electroplating jig and an electroplating method for accommodating a wafer in which an electroplating bus line is provided at the peripheral edge on one side where electroplating is performed and performing electroplating.

半導体装置の製造の際に、複数個の半導体装置をウェーハの一面側に形成し、最終的にウェーハを切断して個々の半導体装置に分離することが行なわれている。
かかる製造工程では、配線パターン等を形成するためにウェーハの一面側の所定箇所に電解めっきを施すことが必要となるため、通常、電解めっきを施すウェーハの一面側の周縁には、その所定箇所に給電する電解めっき用バスラインが設けられている。
この様なウェーハの一面側に電解めっきを施す際には、例えば下記特許文献1に提案されている電解めっき用治具を用いることができる。
かかる電解めっき用治具を図7及び図8に示す。図7及び図8に示す電解めっき用治具100は、樹脂から成るフィルム状の表面被覆材102と裏面被覆材104との間に、ウェーハ106が挟み込まれ、電解めっきを施すウェーハ106の一面側が露出するように、表面被覆材102に開口部103(図8)が形成されている。
更に、表面被覆材102と裏面被覆材104との間に、ウェーハ106の外周縁に沿って導電体108が配設されており、この導電体108には、ウェーハ106の電解めっき用バスラインと接続される電極110,110・・がウェーハ106の外周縁に沿って形成されている。
かかる導電体108は、電解めっき用治具100の一箇所から外方に引出線114として引き出され、電解めっき用電極の一方に接続される。
尚、図7及び図8に示す電解めっき用治具100を構成する矩形状の表面被覆材102及び裏面被覆材104には、四隅に切欠部112,112・・が形成されている。
At the time of manufacturing a semiconductor device, a plurality of semiconductor devices are formed on one surface side of the wafer, and finally the wafer is cut and separated into individual semiconductor devices.
In such a manufacturing process, it is necessary to apply electrolytic plating to a predetermined portion on one surface side of the wafer in order to form a wiring pattern or the like. An electroplating bus line for supplying power to is provided.
When electrolytic plating is performed on one side of such a wafer, for example, a jig for electrolytic plating proposed in Patent Document 1 below can be used.
Such an electroplating jig is shown in FIGS. 7 and 8, the electroplating jig 100 has a wafer 106 sandwiched between a film-like surface covering material 102 and a back surface covering material 104 made of a resin. An opening 103 (FIG. 8) is formed in the surface covering material 102 so as to be exposed.
Further, a conductor 108 is disposed along the outer peripheral edge of the wafer 106 between the front surface covering material 102 and the back surface covering material 104, and the conductor 108 includes a bus line for electrolytic plating of the wafer 106. Connected electrodes 110, 110... Are formed along the outer peripheral edge of the wafer 106.
The conductor 108 is led out as a lead wire 114 from one place of the electrolytic plating jig 100 and connected to one of the electrolytic plating electrodes.
7 and 8, the rectangular surface covering material 102 and the back surface covering material 104 constituting the electrolytic plating jig 100 are formed with notches 112, 112,.

ウェーハ106が収容された図7及び図8に示す電解めっき用治具100を、図9に示す様に、アノード電極206,206が配設されている電解めっき槽200に貯留された電解めっき液202に浸漬し、表面被覆材102の開口部103から露出しているウェーハ106の所定箇所に電解めっきを施すことができる。
この際に、電解めっき用治具100は、その切欠部112,112・・の各々が電解めっき槽200内に設けられた支持バー204と係合して、電解めっき槽200内の所定位置に位置決めされている。かかる電解めっき用治具100から引き出された引出線114は、カソード電極に接続される。
ウェーハ106の一面側の所定箇所に電解めっきを施した後、電解めっき用治具100を取り出して、表面被覆材102及び裏面被覆材104をカッターナイフ等で切り裂くことによって、電解めっきを施したウェーハ106を取り出すことができる。
尚、図9に示す電解めっき槽200では、その底面に設けられた散気管208から気体を噴出し、電解めっき用治具100に対して平行な液流を発生させている。
特開平8−311689号公報(特許請求の範囲、図1、図2)
7 and 8 in which the wafer 106 is accommodated, as shown in FIG. 9, the electrolytic plating solution stored in the electrolytic plating tank 200 in which the anode electrodes 206 and 206 are disposed, as shown in FIG. It is possible to apply electrolytic plating to a predetermined portion of the wafer 106 which is immersed in 202 and exposed from the opening 103 of the surface covering material 102.
At this time, the electrolytic plating jig 100 is engaged with the support bar 204 provided in the electrolytic plating bath 200 at each of the notches 112, 112. It is positioned. The lead wire 114 drawn out from the electrolytic plating jig 100 is connected to the cathode electrode.
After electrolytic plating is performed on a predetermined portion on one surface side of the wafer 106, the electrolytic plating jig 100 is taken out, and the surface coating material 102 and the back surface coating material 104 are cut with a cutter knife or the like to perform electrolytic plating. 106 can be removed.
In the electroplating bath 200 shown in FIG. 9, a gas is jetted from an air diffuser pipe 208 provided on the bottom surface of the electroplating tank 200 to generate a liquid flow parallel to the electroplating jig 100.
JP-A-8-311689 (Claims, FIGS. 1 and 2)

図7及び図8に示す電解めっき用治具100によれば、ウェーハ106を電解めっき用治具100内に収容でき、電解めっきを施したウェーハ106を電解めっき用治具100から容易に取り出すことができる。
更に、ウェーハ106のサイズやオリエンテーションフラットの形状等が変更されても、対応する電解めっき用治具100を容易に形成できる。
しかし、図7及び図8に示す電解めっき用治具100では、電解めっき終了後に表面被覆材102及び裏面被覆材104をカッターナイフ等で切り裂いてウェーハ106を取り出しているため、同一サイズで且つ同一外形形状の複数枚のウェーハに電解めっきを施す場合でも、電解めっき用治具100を再使用できず、ウェーハごとに電解めっき用治具100を形成することを要する。
また、ウェーハ106の周縁に沿って配設され、ウェーハ106の電解めっき用バスラインに給電する導電体108は、電解めっき用治具100の一箇所から外方に引出線114として引き出されている。
このため、引出線114との接続箇所に近いウェーハ106の所定箇所に電流密度が集中し、電流密度が集中した領域のめっき被膜が、他のめっき領域のめっき被膜に比較して厚くなり、ウェーハ106の一面側に形成されるめっき被膜の厚さ等にバラツキが発生するおそれがある。
そこで、本発明の課題は、同一のサイズ及び形状の複数枚のウェーハに電解めっきを施す際には、再使用可能であり、他方、ウェーハのサイズ等が変更されても容易に対応でき、且つウェーハの電解めっきを施す一面側の電流密度を可及的に均一とし得る電解めっき用治具及び電解めっき方法を提供することにある。
According to the electrolytic plating jig 100 shown in FIGS. 7 and 8, the wafer 106 can be accommodated in the electrolytic plating jig 100, and the electrolytically plated wafer 106 can be easily taken out from the electrolytic plating jig 100. Can do.
Furthermore, even if the size of the wafer 106 or the shape of the orientation flat is changed, the corresponding electrolytic plating jig 100 can be easily formed.
However, in the electroplating jig 100 shown in FIGS. 7 and 8, since the surface covering material 102 and the back surface covering material 104 are cut with a cutter knife or the like after the electroplating is finished, the wafer 106 is taken out. Even when electrolytic plating is performed on a plurality of wafers having an outer shape, the electrolytic plating jig 100 cannot be reused, and it is necessary to form the electrolytic plating jig 100 for each wafer.
In addition, the conductor 108 disposed along the periphery of the wafer 106 and supplying power to the electrolytic plating bus line of the wafer 106 is led out from one place of the electrolytic plating jig 100 as a lead wire 114. .
For this reason, the current density is concentrated at a predetermined location on the wafer 106 close to the connection location with the lead wire 114, and the plating film in the region where the current density is concentrated becomes thicker than the plating coating in the other plating regions. There is a possibility that variations may occur in the thickness of the plating film formed on one side of 106.
Therefore, the subject of the present invention is reusable when electrolytic plating is performed on a plurality of wafers having the same size and shape, and on the other hand, even if the size of the wafer is changed, An object of the present invention is to provide an electroplating jig and an electroplating method that can make the current density on one side of the wafer subjected to electroplating as uniform as possible.

本発明者は、前記課題を解決すべく検討を重ねた結果、樹脂層の両面が金属箔によって形成された複数枚の両面金属箔基板を多層に積層し、両面が金属箔によって形成された多層基板を電解めっき用治具に用いることによって、再使用可能な電解めっき用治具を容易に形成できることを見出し、本発明に到達した。
すなわち、本発明は、電解めっきが施される一面側の周縁に電解めっき用バスラインが設けられたウェーハを収容して電解めっきを施す電解めっき用治具において、該電解めっき用治具が、複数枚の基板が積層されて形成された、両面が金属層から成る多層基板であって、前記多層基板に形成されたウェーハ収容孔には、前記ウェーハ収容孔内にウェーハを収容したとき、前記ウェーハの電解めっき用バスラインが形成された周縁部の一面側と当接して前記ウェーハを支承するように、前記ウェーハ収容孔の内壁面に沿って内方に突出する鍔部が形成され、且つ前記鍔部の一面側に形成された、前記電解めっき用バスラインと当接する複数のパッドの各々が、前記多層基板の両面を形成する金属層に電気的に接続されていることを特徴とする電解めっき用治具にある。
また、本発明は、前述した電解めっき用治具を用いて、ウェーハの一面側の所定箇所に電解めっきを施す際に、該ウェーハを、その電解めっきを施す一面側の周縁に形成された電解めっき用バスラインが、前記電解めっき用治具のウェーハ収容孔内の鍔部に形成されたパッドの各々に当接するように、前記ウェーハ収容孔内に挿入した後、前記ウェーハの他面側を含む電解めっき用治具の一面側の全面をフィルムによって覆うと共に、前記電解めっき用治具の他面側の全面を樹脂層で覆い、次いで、前記ウェーハの電解めっきを施す一面側の所定箇所を露出するように、前記樹脂層にパターンニングを施し、その後、電解めっき槽内のめっき液に浸漬した前記電解めっき用治具の多層基板の両面を形成する金属層の少なくとも一方に、めっき電極の一方を接続して、前記ウェーハの所定箇所に電解めっきを施すことを特徴とする電解めっき方法でもある。
As a result of repeated studies to solve the above problems, the present inventors have laminated a plurality of double-sided metal foil substrates in which both surfaces of the resin layer are formed of metal foil, and a multilayer in which both surfaces are formed of metal foil. The inventors have found that a reusable electrolytic plating jig can be easily formed by using the substrate as an electrolytic plating jig, and the present invention has been achieved.
That is, the present invention relates to an electroplating jig for accommodating an electroplating by accommodating a wafer provided with an electroplating bus line at the periphery on one side where electroplating is performed, and the electroplating jig includes: A multilayer substrate formed by laminating a plurality of substrates and having both sides made of a metal layer, and the wafer accommodating hole formed in the multilayer substrate, when the wafer is accommodated in the wafer accommodating hole, A flange that protrudes inwardly along the inner wall surface of the wafer receiving hole is formed so as to abut against the one surface side of the peripheral edge where the bus line for electrolytic plating of the wafer is formed to support the wafer, and Each of the plurality of pads formed on one surface side of the flange and contacting the electrolytic plating bus line is electrically connected to a metal layer forming both surfaces of the multilayer substrate. There is the solution plating jig.
Further, the present invention provides an electrolytic plating formed on the peripheral edge of one surface side where the electrolytic plating is performed when the above-mentioned electroplating jig is used to perform electrolytic plating on a predetermined portion on one surface side of the wafer. After the plating bus line is inserted into the wafer accommodation hole so as to abut each of the pads formed in the flanges in the wafer accommodation hole of the electrolytic plating jig, the other surface side of the wafer is The entire surface on one surface side of the electroplating jig is covered with a film, the entire other surface side of the electroplating jig is covered with a resin layer, and then a predetermined portion on the one surface side where the electroplating of the wafer is performed The resin layer is patterned so as to be exposed, and then plated on at least one of the metal layers forming both surfaces of the multilayer substrate of the jig for electrolytic plating immersed in a plating solution in an electrolytic plating tank. Connect one pole, is also a electroless plating method characterized by electrolytic plating a predetermined portion of the wafer.

かかる本発明において、多層基板として、樹脂層の両面が金属箔によって形成された複数枚の両面金属箔基板を、接着材層によって多層に積層して形成した多層基板を好適に用いることができる。
更に、鍔部を、多層基板を形成する基板の一枚に形成することにより、ウェーハの電解めっき用バスラインと当接する複数のパッドを鍔部の一面側に容易に形成できる。
かかる鍔部を形成した基板の他の基板との積層面を、前記鍔部の一面側に形成した各パッドに電気的に接続された金属層によって形成することにより、各パッドの電流密度を可及的に均一とすることができる。
この鍔部の一面側に形成した複数のパッドと多層基板の両面を形成する金属層とを、ヴィア及び基板間に形成された金属層によって電気的に接続することにより、各パッドの電流密度を更に均一とすることができ好適である。
また、多層基板に、複数個のウェーハ収容孔を形成し、前記ウェーハ収容孔の各々に、内方に突出する鍔部を形成することによって、複数個のウェーハを同時に電解めっきを施すことができる。
かかる多層基板のウェーハ収容孔間に、スリットを形成することによって、多層基板が多少曲折されても、ウェーハ収容孔に収容されているウェーハへの損傷を回避できる。
尚、電解めっき用治具の他面側の全面を覆う樹脂層として、感光性樹脂層から成る樹脂層を用いることによって、電解めっき用治具の他面側の全面を覆う樹脂層に対して、ウェーハの電解めっきを施す一面側の所定箇所を露出するように容易にパターンニングを施すことができる。
In the present invention, as the multilayer substrate, a multilayer substrate formed by laminating a plurality of double-sided metal foil substrates in which both surfaces of the resin layer are formed of metal foils into a multilayer by an adhesive layer can be suitably used.
Furthermore, by forming the collar on one of the substrates forming the multilayer substrate, a plurality of pads that contact the electrolytic plating bus line of the wafer can be easily formed on one surface of the collar.
The current density of each pad can be adjusted by forming a laminated surface of the substrate on which the flange is formed with another substrate by a metal layer electrically connected to each pad formed on one surface of the flange. It can be made as uniform as possible.
By electrically connecting a plurality of pads formed on one surface side of the buttock and a metal layer forming both surfaces of the multilayer substrate by a via and a metal layer formed between the substrates, the current density of each pad can be reduced. Further, it can be made uniform, which is preferable.
Further, by forming a plurality of wafer accommodation holes in the multilayer substrate and forming a flange projecting inward in each of the wafer accommodation holes, a plurality of wafers can be subjected to electrolytic plating simultaneously. .
By forming a slit between the wafer accommodation holes of the multilayer substrate, damage to the wafer accommodated in the wafer accommodation hole can be avoided even if the multilayer substrate is bent slightly.
In addition, by using a resin layer made of a photosensitive resin layer as a resin layer covering the entire other surface side of the electroplating jig, the resin layer covering the entire other surface side of the electroplating jig is used. Then, patterning can be easily performed so as to expose a predetermined portion on one side where the electrolytic plating of the wafer is performed.

本発明に係る電解めっき用治具では、複数枚の基板が積層されて形成された、両面が金属層から成る多層基板に、ウェーハを収容するウェーハ収容孔を形成しているものである。このため、同一のサイズで且つ形状のウェーハに電解めっきを施す場合には、電解めっき用治具を再使用可能である。
一方、電解めっきを施すウェーハが、ウェーハ収容孔に収容可能のウェーハのサイズ又は形状と相異する場合には、電解めっきを施すウェーハを収容できるウェーハ収容孔を多層基板に形成することによって、形状等の異なるウェーハに対応する電解めっき用治具を容易に形成できる。
また、多層基板のウェーハ収容孔内に形成された、その内方に突出する鍔部は、ウェーハ収容孔に収容するウェーハを、その周縁に電解めっき用バスラインが形成された一面側と当接して支承する。かかる鍔部の一面側には、ウェーハの電解めっき用バスラインと当接する複数のパッドが形成され、各パッドが多層基板の両面を形成する金属層に電気的に接続されている。
この様に、ウェーハの電解めっき用バスラインと当接する複数のパッドの各々が、多層基板の両面を形成する金属層に電気的に接続されているため、各パッドの電流密度を一定にでき、ウェーハの電解めっきを施す所定箇所の電流密度も一定にできる。
また、この様な本発明に係る電解めっき用治具を用いてウェーハの一面側の所定箇所に電解めっきを施すことによって、ウェーハの電解めっきを施す所定箇所の電流密度も一定にできるため、ウェーハの一面側の所定箇所に形成した電解めっき層の厚さ等を一定にできる。
In the jig for electrolytic plating according to the present invention, a wafer accommodation hole for accommodating a wafer is formed in a multilayer substrate formed by laminating a plurality of substrates and having both surfaces made of a metal layer. For this reason, when electrolytic plating is performed on wafers having the same size and shape, the electrolytic plating jig can be reused.
On the other hand, when the wafer to be subjected to electrolytic plating is different from the size or shape of the wafer that can be accommodated in the wafer accommodation hole, the wafer accommodation hole that can accommodate the wafer to be subjected to electrolytic plating is formed in the multilayer substrate. It is possible to easily form an electroplating jig corresponding to different wafers.
In addition, the inwardly protruding flange formed in the wafer accommodation hole of the multilayer substrate abuts the wafer accommodated in the wafer accommodation hole on the one surface side where the electrolytic plating bus line is formed on the periphery. To support. A plurality of pads that contact the electrolytic plating bus line of the wafer are formed on one surface side of the flange, and each pad is electrically connected to a metal layer that forms both surfaces of the multilayer substrate.
In this way, since each of the plurality of pads that contact the bus line for electrolytic plating of the wafer is electrically connected to the metal layers forming both surfaces of the multilayer substrate, the current density of each pad can be made constant, The current density at a predetermined location where the wafer is electroplated can also be made constant.
In addition, by performing electrolytic plating on a predetermined portion on one side of the wafer using the electrolytic plating jig according to the present invention, the current density at the predetermined portion where the electrolytic plating of the wafer is performed can be made constant. The thickness etc. of the electroplating layer formed in the predetermined location of the one surface side can be made constant.

本発明に係る電解めっき用治具の一例を図1に示す。図1に示す電解めっき用治具10は、樹脂層の両面が金属箔としての銅箔によって形成された三枚の両面金属箔基板12a,12b,12c(以下、単に基板12a,12b,12cと称することがある)を積層して形成した多層基板12から成り、多層基板12の両面は金属層としての銅層で形成されている。
かかる多層基板12の中央部には、電解めっきを施すウェーハを収容するウェーハ収容孔14が形成されている。このウェーハ収容孔14は、図2に示す様に、収容するウェーハの外形形状に倣って形成された第1収容孔14aと、第1収容孔14aよりも開口面積が小さい第2収容孔14bとから成る。この第2収容孔14bは、基板12cに形成されており、ウェーハ収容孔14の内方に突出する鍔部16が、基板12cにより形成されている。
かかるウェーハ収容孔14に形成されたフラット部14fはウェーハのオリエンテーションフラットの形状に倣って形成されている。
ウェーハ収容孔14の内方に突出する鍔部16のウェーハの挿入側面には、挿入されるウェーハの一面側の周縁に形成された電解めっき用バスラインに当接するパッド18,18・・が、鍔部16の周方向に間欠的に形成されている。かかるパッド18,18の間は樹脂が露出した樹脂面20に形成されている。
このパッド18,18・・の各々は、多層基板12の両面を形成する金属層としての銅層に電気的に接続されている。
An example of a jig for electrolytic plating according to the present invention is shown in FIG. The electrolytic plating jig 10 shown in FIG. 1 includes three double-sided metal foil substrates 12a, 12b, and 12c (hereinafter simply referred to as substrates 12a, 12b, and 12c) in which both surfaces of a resin layer are formed of copper foil as a metal foil. The multilayer substrate 12 is formed of a copper layer as a metal layer.
A wafer accommodation hole 14 for accommodating a wafer to be subjected to electrolytic plating is formed in the central portion of the multilayer substrate 12. As shown in FIG. 2, the wafer accommodation hole 14 includes a first accommodation hole 14a formed following the outer shape of the wafer to be accommodated, and a second accommodation hole 14b having an opening area smaller than that of the first accommodation hole 14a. Consists of. The second accommodation hole 14b is formed in the substrate 12c, and a flange 16 protruding inward of the wafer accommodation hole 14 is formed by the substrate 12c.
The flat portion 14f formed in the wafer accommodation hole 14 is formed following the shape of the orientation flat of the wafer.
Pads 18, 18... That come into contact with the electrolytic plating bus line formed on the peripheral edge of one surface of the wafer to be inserted are provided on the wafer insertion side of the flange portion 16 protruding inward of the wafer accommodation hole 14. It is formed intermittently in the circumferential direction of the flange 16. The space between the pads 18 and 18 is formed on the resin surface 20 where the resin is exposed.
Each of the pads 18, 18... Is electrically connected to a copper layer as a metal layer that forms both surfaces of the multilayer substrate 12.

かかるパッド18が形成された電解めっき用治具10の部分断面図を図2(a)に示す。図2(a)に示す様に、電解めっき用治具10を形成する基板12a,12b.12cの各々は、樹脂層11bの両面が銅箔11a,11cによって形成されており、基板12a,12b.12cの各基板の接合はプリプレグ13によってなされている。
かかる基板12cには、鍔部16が形成されており、鍔部16のウェーハの挿入側面(内面)に形成されたパッド18は、基板12cの基板12bとの接合面側の銅箔11aの一部が延出されて形成されている。
この基板12bの銅箔11aは、パッド18と多層基板12の外周面との間に設けられたヴィア22によって、多層基板12の両面を形成する銅箔11a、11bに電気的に接続されている。
FIG. 2A shows a partial cross-sectional view of the electrolytic plating jig 10 on which the pad 18 is formed. As shown in FIG. 2A, the substrates 12a, 12b. 12c, both surfaces of the resin layer 11b are formed of copper foils 11a and 11c, and the substrates 12a, 12b. Each substrate 12c is joined by the prepreg 13.
The substrate 12c is provided with a flange portion 16, and the pad 18 formed on the insertion side surface (inner surface) of the wafer of the flange portion 16 is a part of the copper foil 11a on the bonding surface side of the substrate 12c with the substrate 12b. The part is extended and formed.
The copper foil 11a of the substrate 12b is electrically connected to the copper foils 11a and 11b forming both surfaces of the multilayer substrate 12 by vias 22 provided between the pad 18 and the outer peripheral surface of the multilayer substrate 12. .

かかる鍔部16の外面側では、銅箔11cが除去されて樹脂層11bが露出しており、鍔部16のパッド18が形成された部分では、その内面側と外面側との構造が異なるため、図2(a)の一点鎖線に示す様に、ウェーハ収容孔14の内方方向への反りが発生することがある。この反りが存在すると、ウェーハ収容孔14にウェーハを収容して、ウェーハをパッド18に押し付けたとき、この押圧力によって鍔部16が反り方向と反対側(外面側)に押し戻され、ウェーハの一面側の周縁に形成された電解めっき用バスラインとパッド18との接続を充分に行なうことができる。
また、パッド18,18の間の樹脂面20が形成された電解めっき用治具10の部分断面図を図2(b)に示す。樹脂面20に形成された鍔部16も基板12cから延出されて形成されており、樹脂面20はプリプレグ13によって形成されている。
On the outer surface side of the flange portion 16, the copper foil 11c is removed and the resin layer 11b is exposed. In the portion where the pad 18 of the flange portion 16 is formed, the inner surface side and the outer surface side are different. As shown by the alternate long and short dash line in FIG. 2A, the wafer accommodating hole 14 may be warped in the inward direction. When this warpage exists, when the wafer is accommodated in the wafer accommodation hole 14 and the wafer is pressed against the pad 18, the flange portion 16 is pushed back to the opposite side (outer surface side) by the pressing force, and one surface of the wafer The connection between the electroplating bus line formed on the peripheral edge of the side and the pad 18 can be sufficiently performed.
FIG. 2B shows a partial cross-sectional view of the electrolytic plating jig 10 in which the resin surface 20 between the pads 18 and 18 is formed. The flange portion 16 formed on the resin surface 20 is also extended from the substrate 12 c, and the resin surface 20 is formed by the prepreg 13.

図1及び図2に示す電解めっき用治具10は、図3に示す工程で製造できる。先ず、図3(a)に示す様に、樹脂層11bの両面が銅箔11a,11cによって形成された両面金属箔基板12a,12b,12cを、プリプレグ13を介して加熱圧着して積層する。
かかる基板12a,12b,12cのうち、基板12cの一面側を形成する銅箔11aには、図4(a)に示す様に、電解めっきを施すウェーハの形状に倣って樹脂層11bの面が露出していると共に、鍔部16を形成する部分(一点鎖線と実線で囲まれた部分)に銅箔11aが延出されたパッド18,18・・が形成されている。
更に、基板12cの他面側を形成する銅箔11cには、図4(b)に示す様に、電解めっきを施すウェーハの形状に倣って樹脂層11bの面が露出している。
かかる基板12cの両面側のパターンニングは、基板12cの両面側に塗布して形成した感光性樹脂層に感光・現像した後、基板12cをエッチング液に浸漬して銅箔11a,11cの所定箇所をエッチングすることによって行なうことができる。
The electrolytic plating jig 10 shown in FIGS. 1 and 2 can be manufactured by the process shown in FIG. First, as shown in FIG. 3A, double-sided metal foil substrates 12a, 12b, and 12c, in which both surfaces of a resin layer 11b are formed of copper foils 11a and 11c, are laminated by thermocompression bonding via a prepreg 13.
Among the substrates 12a, 12b, and 12c, the copper foil 11a that forms one surface side of the substrate 12c has a surface of the resin layer 11b following the shape of the wafer to be electroplated, as shown in FIG. Pads 18, 18... With copper foil 11 a extending are formed at portions that are exposed and that form the flanges 16 (portions surrounded by a one-dot chain line and a solid line).
Further, as shown in FIG. 4B, the surface of the resin layer 11b is exposed on the copper foil 11c forming the other surface side of the substrate 12c, following the shape of the wafer to be subjected to electrolytic plating.
The patterning on both sides of the substrate 12c is performed by exposing and developing a photosensitive resin layer formed by coating on both sides of the substrate 12c, and then immersing the substrate 12c in an etching solution so that predetermined portions of the copper foils 11a and 11c are formed. Can be performed by etching.

図3(a)及び図4に示す基板12a,12b,12cを、プリプレグ13を介して積層して加熱圧着する。加熱圧着した状態を図3(b)に示す。
図3(b)に示す様に、基板12cの銅箔11aをエッチングして除去した部分には、プリプレグ13が充填される。
次いで、図3(c)に示す様に、パッド18と多層基板12の外周面との間にヴィア22を形成する。このヴィア22は、多層基板12の所定箇所にドリル等によって穿設した貫通孔21内に導電性樹脂を充填或いはめっきにより金属を充填することによって形成できる。
その後、図3(d)に示す様に、多層基板12にウェーハ収容孔14を形成すべく、先ず、収容するウェーハの外形形状に倣って基板12a,12bの所定箇所をルータによって研削して第1収容孔14aを形成する。この際に、基板12cに形成したパッド18の表面が露出した時点でルータによる研削加工を終了する。この様に、第1収容孔14aを形成した時点では、基板cの銅箔11aをエッチングによって除去した部分には、プリプレグ13の一部が残っている。
更に、基板12cを銅箔11c側からルータによって研削加工を施し、第2収容孔14bを形成することによって、図1及び図2に示す電解めっき用治具10を得ることができる。
尚、基板12aとしては、両面金属箔基板12aに代えて、銅箔11aのみが形成されている片面金属箔基板を用いることができ、基板12bとしても、両面金属箔基板12bに代えて、樹脂層11bのみから成る樹脂基板を用いることができる。
The substrates 12a, 12b, and 12c shown in FIGS. 3A and 4 are stacked via the prepreg 13 and heat-pressed. FIG. 3 (b) shows the state after thermocompression bonding.
As shown in FIG. 3B, the prepreg 13 is filled in the portion of the substrate 12c where the copper foil 11a is removed by etching.
Next, as shown in FIG. 3C, a via 22 is formed between the pad 18 and the outer peripheral surface of the multilayer substrate 12. The via 22 can be formed by filling a conductive resin in a through hole 21 formed by drilling or the like at a predetermined position of the multilayer substrate 12 or filling a metal by plating.
Thereafter, as shown in FIG. 3D, in order to form the wafer accommodation holes 14 in the multilayer substrate 12, first, a predetermined portion of the substrates 12a and 12b is ground by a router according to the outer shape of the wafer to be accommodated. 1 accommodation hole 14a is formed. At this time, the grinding process by the router is finished when the surface of the pad 18 formed on the substrate 12c is exposed. Thus, at the time of forming the first accommodation hole 14a, a part of the prepreg 13 remains in the portion of the substrate c where the copper foil 11a is removed by etching.
Further, the substrate 12c is ground from the copper foil 11c side by a router to form the second accommodation hole 14b, whereby the electrolytic plating jig 10 shown in FIGS. 1 and 2 can be obtained.
In addition, it can replace with the double-sided metal foil board | substrate 12a as the board | substrate 12a, and can use the single-sided metal foil board | substrate in which only the copper foil 11a is formed, and it replaces with the double-sided metal foil board | substrate 12b also as a board | substrate 12b. A resin substrate made only of the layer 11b can be used.

図1及び図2に示す電解めっき用治具10を用いてウェーハの一面側に電解めっきを施す際には、図5(a)に示す様に、多層基板12に形成したウェーハ収容孔14の第1収容孔14a内にウェーハ24を収容する。この際に、ウェーハ24を、その一面側の周縁に形成された電解めっき用バスラインと鍔部16のパッド18とが当接するように、第1収容孔14a内に挿入する。
更に、ウェーハ24の電解めっきを施さない他面側及び多層基板12の一面側の全面を保護フィルム26によって覆うと共に、ウェーハ収容孔14の第2収容孔14bから露出するウェーハ24の一面側及び多層基板12の他面側の全面を感光性のドライフィルム28によって覆う。この保護フィルム26としては、粘着性テープを用いることによって、通常の圧着装置により容易にウェーハ24の他面側及び多層基板12の一面側の全面に圧着できる。感光性のドライフィルム28も、通常の圧着装置によってウェーハ24の一面側及び多層基板12の他面側の全面に圧着できる。
When electrolytic plating is performed on one side of a wafer using the electrolytic plating jig 10 shown in FIGS. 1 and 2, the wafer receiving holes 14 formed in the multilayer substrate 12 are formed as shown in FIG. The wafer 24 is accommodated in the first accommodation hole 14a. At this time, the wafer 24 is inserted into the first accommodation hole 14a so that the electroplating bus line formed on the peripheral edge of the one surface and the pad 18 of the flange 16 come into contact with each other.
Further, the other surface of the wafer 24 not subjected to electrolytic plating and the entire surface of the one surface of the multilayer substrate 12 are covered with the protective film 26, and the one surface of the wafer 24 exposed from the second housing hole 14 b of the wafer housing hole 14 and the multilayer. The entire other surface of the substrate 12 is covered with a photosensitive dry film 28. As the protective film 26, by using an adhesive tape, it can be easily crimped to the entire other surface side of the wafer 24 and the entire one surface side of the multilayer substrate 12 by a normal crimping apparatus. The photosensitive dry film 28 can also be pressure-bonded to the entire surface of the one surface side of the wafer 24 and the other surface side of the multilayer substrate 12 by a normal pressure bonding apparatus.

次いで、感光性のドライフィルム28に感光・現像を行ない、図5(b)に示す様に、ウェーハ24の電解めっきを施す所定箇所を含む電解めっき面24aのみを露出する。
残ったドライフィルム28は、ウェーハ24の周縁に形成された電解めっき用バスライン等の給電部分を保護する保護フィルムの役割を果たす。
その後、ウェーハ24を図5(a)に示すようにウェーハ収容孔14内に収容した電解めっき用治具10を、図9に示す電解めっき槽200の電解めっき液に浸漬して電解めっきを施す。この電解めっきでは、ウェーハ24の電解めっき面24aのみが露出しているため、電解めっき面24の所定箇所のみに電解めっきを施すことができ、保護フィルム26及びドライフィルム28で覆われている電解めっき用治具10やウェーハ24の周縁には電解めっきが施されることを防止できる。
Next, the photosensitive dry film 28 is exposed to light and developed to expose only the electrolytic plating surface 24a including a predetermined portion of the wafer 24 to be subjected to electrolytic plating, as shown in FIG. 5B.
The remaining dry film 28 serves as a protective film for protecting a power feeding portion such as an electrolytic plating bus line formed on the periphery of the wafer 24.
Thereafter, the electrolytic plating jig 10 in which the wafer 24 is accommodated in the wafer accommodating hole 14 as shown in FIG. 5A is immersed in the electrolytic plating solution in the electrolytic plating tank 200 shown in FIG. . In this electrolytic plating, since only the electrolytic plating surface 24 a of the wafer 24 is exposed, the electrolytic plating can be performed only on a predetermined portion of the electrolytic plating surface 24, and the electrolysis covered with the protective film 26 and the dry film 28 is performed. Electroplating can be prevented from being applied to the periphery of the plating jig 10 and the wafer 24.

所定の電解めっきを終了した後、電解めっき槽200から電解めっき用治具10を取り出し、保護フィルム26及びドライフィルム28を物理的又は化学的に剥離することによって、所定箇所に電解めっきが施されたウェーハ24を取り出すことができる。
ウェーハ24を取り出した電解めっき用治具10は、簡単な洗浄を施した後、再度、ウェーハ24をウェーハ収容孔14に収容して再使用できる。
また、電解めっき用治具10に収容されたウェーハ24の電解めっき用バスラインには、電解めっき用治具10を形成する金属箔11a,11c及びヴィア22を介して鍔部16に形成されたパッド18,18・・から給電される。このパッド18,18・・は、基板12cを形成する金属箔11aから延出されているため、平均した電流密度で電解めっき用バスラインに当接できる。その結果、ウェーハ24の電解めっきを施す箇所を均一な電流密度とすることができ、均一な電解めっき被膜を形成できる。
ところで、サイズや形状等が異なるウェーハ24に電解めっきを施す場合には、新たな電解めっき用治具10を形成することを要するが、電解めっき用治具10は三枚の両面金属箔基板12a,12b,12cを積層して形成した構造が極めてシンプルなものである。このため、サイズや形状等が異なるウェーハ24を収容し得る電解めっき用治具10を容易に形成できる。
ここで、電解めっき用治具10を構成する多層基板12の側面は露出しており、電解めっきの際に、銅箔11a,11cの端面にめっき金属が付着するものの、銅箔11a,11cの厚さは極めて薄いため、付着めっき金属量も極めて少なく問題とはならない。
但し、多層基板12の側面を樹脂膜等の絶縁膜によって覆い、この側面へのめっき金属の付着を防止してもよい。
After the predetermined electrolytic plating is completed, the electrolytic plating jig 10 is taken out from the electrolytic plating tank 200, and the protective film 26 and the dry film 28 are physically or chemically peeled off, whereby electrolytic plating is applied to predetermined locations. The wafer 24 can be taken out.
The electrolytic plating jig 10 from which the wafer 24 has been taken out can be reused by accommodating the wafer 24 in the wafer accommodation hole 14 again after performing simple cleaning.
Further, the electrolytic plating bus line of the wafer 24 accommodated in the electrolytic plating jig 10 was formed on the flange portion 16 through the metal foils 11 a and 11 c and the vias 22 forming the electrolytic plating jig 10. Power is supplied from the pads 18, 18. Since the pads 18, 18... Are extended from the metal foil 11a forming the substrate 12c, they can contact the electrolytic plating bus line with an average current density. As a result, the portion of the wafer 24 to be subjected to electrolytic plating can have a uniform current density, and a uniform electrolytic plating film can be formed.
By the way, when electrolytic plating is performed on the wafers 24 having different sizes, shapes, etc., it is necessary to form a new electrolytic plating jig 10. The electrolytic plating jig 10 includes three double-sided metal foil substrates 12 a. , 12b, and 12c are extremely simple. For this reason, the electrolytic plating jig 10 that can accommodate the wafers 24 having different sizes, shapes, and the like can be easily formed.
Here, the side surface of the multilayer substrate 12 constituting the electrolytic plating jig 10 is exposed, and the plated metal adheres to the end surfaces of the copper foils 11a and 11c during the electrolytic plating, but the copper foils 11a and 11c Since the thickness is extremely thin, the amount of deposited plating metal is extremely small, which is not a problem.
However, the side surface of the multilayer substrate 12 may be covered with an insulating film such as a resin film to prevent the plating metal from adhering to the side surface.

図1〜図5に示す電解めっき用治具10には、多層基板12に単一のウェーハ収容孔14が形成されていたが、図6に示す様に、多層基板12に複数個のウェーハ収容孔14,14・・を形成してもよい。図6に示す電解めっき用治具10によれば、複数個のウェーハ24に電解めっきを同時に施すことができ、電解めっきを効率化できる。
この様に、複数個のウェーハ収容孔14,14・・が形成された多層基板12は大型化すると、曲折され易くなる。かかる多層基板12の曲折による歪は、ウェーハ収容孔14に収容されているウェーハ24に加えられ、脆いウェーハ24を破損するおそれがある。
このため、図6に示す様に、ウェーハ収容孔14,14間に、直線状のスリット30を形成することが有効である。すなわち、図6に示す多層基板12では、その曲折に因る歪をスリット30の変形によって吸収できるため、ウェーハ収容孔14に収容されているウェーハ24に加えられる歪を可及的に小さくでき、ウェーハ24の破損のおそれを解消できる。
尚、スリット30としては、直線状のスリットの他に、波線状のスリットであってもよく、破線状のスリットであってもよい。
In the electrolytic plating jig 10 shown in FIGS. 1 to 5, a single wafer accommodation hole 14 is formed in the multilayer substrate 12, but a plurality of wafers are accommodated in the multilayer substrate 12 as shown in FIG. 6. The holes 14, 14... May be formed. According to the electrolytic plating jig 10 shown in FIG. 6, electrolytic plating can be performed on a plurality of wafers 24 at the same time, and the electrolytic plating can be made efficient.
As described above, the multilayer substrate 12 in which the plurality of wafer receiving holes 14, 14,... The distortion due to the bending of the multilayer substrate 12 is applied to the wafer 24 accommodated in the wafer accommodation hole 14, and the fragile wafer 24 may be damaged.
For this reason, as shown in FIG. 6, it is effective to form a linear slit 30 between the wafer accommodation holes 14. That is, in the multilayer substrate 12 shown in FIG. 6, since distortion caused by the bending can be absorbed by deformation of the slit 30, distortion applied to the wafer 24 accommodated in the wafer accommodation hole 14 can be reduced as much as possible. The risk of damage to the wafer 24 can be eliminated.
The slit 30 may be a wavy slit or a dashed slit in addition to the linear slit.

本発明に係る電解めっき用治具の一例を示す斜視図である。It is a perspective view which shows an example of the jig | tool for electrolytic plating which concerns on this invention. 図1に示す電解めっき用治具の部分断面図である。It is a fragmentary sectional view of the jig for electroplating shown in FIG. 図1に示す電解めっき用治具の製造工程を説明する説明図である。It is explanatory drawing explaining the manufacturing process of the jig | tool for electrolytic plating shown in FIG. 図3(a)に示す基板12cを説明する正面図及び背面図である。It is the front view and back view explaining the board | substrate 12c shown to Fig.3 (a). 図1及び図2に示す電解めっき用治具にウェーハを収容する工程を説明する説明図である。It is explanatory drawing explaining the process of accommodating a wafer in the jig | tool for electrolytic plating shown in FIG.1 and FIG.2. 本発明に係る電解めっき用治具の他の例を示す正面図である。It is a front view which shows the other example of the jig | tool for electrolytic plating which concerns on this invention. 従来の電解めっき用治具を説明する斜視図である。It is a perspective view explaining the jig | tool for conventional electroplating. 図8に示す電解めっき用治具の部分断面図である。It is a fragmentary sectional view of the jig for electrolytic plating shown in FIG. 図7に示す電解めっき用治具に収容されたウェーハに電解めっきを施す電解めっき装置の概略を説明する概略図である。It is the schematic explaining the outline of the electroplating apparatus which electrolyzes the wafer accommodated in the jig | tool for electroplating shown in FIG.

符号の説明Explanation of symbols

10 電解めっき用治具
11a,11c 銅箔
11b 樹脂槽
12 多層基板
12a,12b,12c 両面金属箔基板(基板)
13 プリプレグ
14 ウェーハ収容孔
14f フラット部
16 鍔部
18 パッド
20 樹脂面
21 貫通孔
22 ヴィア
24 ウェーハ
26 保護フィルム
28 ドライフィルム
30 スリット
DESCRIPTION OF SYMBOLS 10 Electrolytic-plating jig | tool 11a, 11c Copper foil 11b Resin tank 12 Multilayer board | substrate 12a, 12b, 12c Double-sided metal foil board | substrate (board | substrate)
13 Prepreg 14 Wafer accommodation hole 14f Flat part 16 Eaves part 18 Pad 20 Resin surface 21 Through hole 22 Via 24 Wafer 26 Protective film 28 Dry film 30 Slit

Claims (9)

電解めっきが施される一面側の周縁に電解めっき用バスラインが設けられたウェーハを収容して電解めっきを施す電解めっき用治具において、
該電解めっき用治具が、複数枚の基板が積層されて形成された、両面が金属層から成る多層基板であって、
前記多層基板に形成されたウェーハ収容孔には、前記ウェーハ収容孔内にウェーハを収容したとき、前記ウェーハの電解めっき用バスラインが形成された周縁部の一面側と当接して前記ウェーハを支承するように、前記ウェーハ収容孔の内壁面に沿って内方に突出する鍔部が形成され、
且つ前記鍔部の一面側に形成された、前記電解めっき用バスラインと当接する複数のパッドの各々が、前記多層基板の両面を形成する金属層に電気的に接続されていることを特徴とする電解めっき用治具。
In an electroplating jig that accommodates a wafer in which an electroplating bus line is provided at the peripheral edge on one side where electroplating is performed, and performs electroplating,
The electroplating jig is a multilayer substrate formed by laminating a plurality of substrates and having both surfaces made of metal layers,
When the wafer is accommodated in the wafer accommodation hole, the wafer accommodation hole formed in the multilayer substrate contacts the one surface side of the peripheral edge portion where the electrolytic plating bus line of the wafer is formed to support the wafer. As described above, a flange projecting inward along the inner wall surface of the wafer receiving hole is formed,
And each of the plurality of pads formed on one surface side of the collar portion and in contact with the electrolytic plating bus line is electrically connected to the metal layers forming both surfaces of the multilayer substrate. Electroplating jig to be used.
多層基板が、樹脂層の両面が金属箔によって形成された複数枚の両面金属箔基板を、接着材層によって多層に積層して形成されている請求項1記載の電解めっき用治具。   The jig for electrolytic plating according to claim 1, wherein the multilayer substrate is formed by laminating a plurality of double-sided metal foil substrates each having a resin layer formed of a metal foil in multiple layers by an adhesive layer. 鍔部が、多層基板を形成する基板の一枚に形成されている請求項1又は請求項2記載の電解めっき用治具。   The jig for electrolytic plating according to claim 1 or 2, wherein the flange portion is formed on one substrate forming the multilayer substrate. 鍔部が形成された基板の他の基板との積層面が、前記鍔部の一面側に形成された各パッドに電気的に接続された金属層によって形成されている請求項1〜3のいずれか一項記載の電解めっき用治具。   The laminated surface with the other board | substrate of the board | substrate with which the collar part was formed is formed of the metal layer electrically connected to each pad formed in the one surface side of the said collar part. An electroplating jig according to claim 1. 鍔部の一面側に形成された複数のパッドと多層基板の両面を形成する金属層とが、ヴィア及び基板間に形成された金属層によって電気的に接続されている請求項1〜4のいずれか一項記載の電解めっき用治具。   The plurality of pads formed on one surface side of the collar portion and the metal layers forming both surfaces of the multilayer substrate are electrically connected by the via and the metal layer formed between the substrates. An electroplating jig according to claim 1. 多層基板には、複数個のウェーハ収容孔が形成され、前記ウェーハ収容孔の各々には、内方に突出する鍔部が形成されている請求項1〜5のいずれか一項記載の電解めっき用治具。   6. The electrolytic plating according to claim 1, wherein a plurality of wafer accommodation holes are formed in the multilayer substrate, and a flange that protrudes inward is formed in each of the wafer accommodation holes. Jig. 多層基板のウェーハ収容孔間には、スリットが形成されている請求項6記載の電解めっき用治具。   The electrolytic plating jig according to claim 6, wherein a slit is formed between the wafer accommodation holes of the multilayer substrate. 請求項1〜7のいずれか一項記載の電解めっき用治具を用いて、ウェーハの一面側の所定箇所に電解めっきを施す際に、
該ウェーハを、その電解めっきを施す一面側の周縁に形成された電解めっき用バスラインが、前記電解めっき用治具のウェーハ収容孔内の鍔部に形成されたパッドの各々に当接するように、前記ウェーハ収容孔内に挿入した後、
前記ウェーハの他面側を含む電解めっき用治具の一面側の全面をフィルムによって覆うと共に、前記電解めっき用治具の他面側の全面を樹脂層で覆い、
次いで、前記ウェーハの電解めっきを施す一面側の所定箇所を露出するように、前記樹脂層にパターンニングを施し、
その後、電解めっき槽内のめっき液に浸漬した前記電解めっき用治具の多層基板の両面を形成する金属層の少なくとも一方に、めっき電極の一方を接続して、前記ウェーハの所定箇所に電解めっきを施すことを特徴とする電解めっき方法。
Using the electrolytic plating jig according to any one of claims 1 to 7, when performing electrolytic plating on a predetermined portion on one side of the wafer,
The electrolytic plating bus line formed on the peripheral edge of the one surface on which the electrolytic plating is performed is in contact with each of the pads formed in the flange portion in the wafer receiving hole of the electrolytic plating jig. After inserting into the wafer receiving hole,
Covering the entire surface of one surface side of the electroplating jig including the other surface side of the wafer with a film, and covering the entire surface of the other surface side of the electroplating jig with a resin layer,
Next, patterning is applied to the resin layer so as to expose a predetermined portion on one side where the electrolytic plating of the wafer is performed,
Thereafter, one of the plating electrodes is connected to at least one of the metal layers forming both surfaces of the multilayer substrate of the electrolytic plating jig immersed in the plating solution in the electrolytic plating tank, and electrolytic plating is applied to a predetermined portion of the wafer. Electrolytic plating method characterized by applying
樹脂層として、感光性樹脂層から成る樹脂層を用いる請求項8記載の電解めっき方法。   The electrolytic plating method according to claim 8, wherein a resin layer made of a photosensitive resin layer is used as the resin layer.
JP2005128873A 2005-04-27 2005-04-27 Electrolytic plating jig and electrolytic plating method Expired - Fee Related JP4654065B2 (en)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014065953A (en) * 2012-09-27 2014-04-17 Shin Etsu Polymer Co Ltd Support jig for plating semiconductor wafer
KR20170004049U (en) * 2016-05-20 2017-11-30 주식회사 잉크테크 Clamping jig and clamping table for thin printed circuit board
KR20180092271A (en) * 2017-02-08 2018-08-17 가부시키가이샤 에바라 세이사꾸쇼 Plating apparatus and substrate holder used together with plating apparatus

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08311689A (en) * 1995-05-19 1996-11-26 Electroplating Eng Of Japan Co Wafer plating method and sealing body used therefor
JPH0959795A (en) * 1995-08-24 1997-03-04 Nec Kansai Ltd Plating jig
JP2001335996A (en) * 2000-05-24 2001-12-07 Yamamoto Mekki Shikenki:Kk Cathode cartridge of electroplating testing apparatus, and electroplating testing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08311689A (en) * 1995-05-19 1996-11-26 Electroplating Eng Of Japan Co Wafer plating method and sealing body used therefor
JPH0959795A (en) * 1995-08-24 1997-03-04 Nec Kansai Ltd Plating jig
JP2001335996A (en) * 2000-05-24 2001-12-07 Yamamoto Mekki Shikenki:Kk Cathode cartridge of electroplating testing apparatus, and electroplating testing apparatus

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014065953A (en) * 2012-09-27 2014-04-17 Shin Etsu Polymer Co Ltd Support jig for plating semiconductor wafer
KR20170004049U (en) * 2016-05-20 2017-11-30 주식회사 잉크테크 Clamping jig and clamping table for thin printed circuit board
KR200485343Y1 (en) * 2016-05-20 2017-12-27 (주)잉크테크 Clamping jig and clamping table for thin printed circuit board
KR20180092271A (en) * 2017-02-08 2018-08-17 가부시키가이샤 에바라 세이사꾸쇼 Plating apparatus and substrate holder used together with plating apparatus
KR102438895B1 (en) 2017-02-08 2022-09-02 가부시키가이샤 에바라 세이사꾸쇼 Plating apparatus and substrate holder used together with plating apparatus

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