JP2006289240A - Treatment apparatus and treatment method of substrate - Google Patents

Treatment apparatus and treatment method of substrate Download PDF

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JP2006289240A
JP2006289240A JP2005112371A JP2005112371A JP2006289240A JP 2006289240 A JP2006289240 A JP 2006289240A JP 2005112371 A JP2005112371 A JP 2005112371A JP 2005112371 A JP2005112371 A JP 2005112371A JP 2006289240 A JP2006289240 A JP 2006289240A
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substrate
cleaning
cleaning liquid
transport direction
chamber
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Takahiko Wakatsuki
尊彦 和歌月
Yukinobu Nishibe
幸伸 西部
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Shibaura Mechatronics Corp
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Shibaura Mechatronics Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a treatment apparatus capable of washing a substrate at a high precision in the case the substrate is slantingly conveyed. <P>SOLUTION: The apparatus comprises a washing chamber, a conveyer roller for conveying a substrate W to the inside of the washing chamber while slanting the substrate W at a prescribed angle to the direction rectangular to the conveying direction, and a plurality of nozzles arranged in a row along the direction rectangular to the conveying direction of the substrate and above the substrate being conveyed for jetting a washing liquid in thin and long patterns P. The nozzles are arranged in a manner that neighboring patterns of the washing liquid jetted to the substrate are formed without a gap in the direction rectangular to the conveying direction. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

この発明は基板を洗浄液によって洗浄処理するための基板の処理装置及び処理方法に関する。   The present invention relates to a substrate processing apparatus and a processing method for cleaning a substrate with a cleaning liquid.

液晶表示装置に用いられるガラス製の基板には回路パターンが形成される。基板に回路パターンを形成するにはリソグラフィープロセスが採用される。リソグラフィープロセスは周知のように上記基板にレジストを塗布し、このレジストに回路パターンが形成されたマスクを介して光を照射する。   A circuit pattern is formed on a glass substrate used in the liquid crystal display device. A lithographic process is employed to form a circuit pattern on the substrate. In a lithography process, as is well known, a resist is applied to the substrate, and light is irradiated through a mask having a circuit pattern formed on the resist.

つぎに、レジストの光が照射されない部分或いは光が照射された部分を除去し、基板のレジストが除去された部分をエッチングし、エッチング後にレジストを除去するなどの一連の工程を複数回繰り返すことで、上記基板に回路パターンを形成する。   Next, by repeating a series of steps such as removing a portion of the resist not irradiated with light or a portion irradiated with light, etching the portion of the substrate where the resist is removed, and removing the resist after etching, a plurality of times. Then, a circuit pattern is formed on the substrate.

このようなリソグラフィープロセスにおいては、上記基板に現像液、エッチング液或いはエッチング後にレジストを除去する剥離液などの処理液によって基板を処理する工程、さらに処理液による処理後に洗浄液としての純水によって洗浄処理する工程があり、洗浄後には基板に付着残留した洗浄液を除去する乾燥工程が必要となる。   In such a lithography process, the substrate is treated with a processing solution such as a developer, an etching solution, or a stripping solution that removes the resist after etching, and further washed with pure water as a cleaning solution after the treatment with the treatment solution. There is a step to perform, and after the cleaning, a drying step for removing the cleaning liquid remaining on the substrate is required.

基板に対して上述した一連の処理を行う場合、従来は軸線を水平にして配置された搬送ローラによって上記基板を水平な状態で、処理液によって処理する処理チャンバ、洗浄液によって処理する洗浄チャンバ及びエアーナイフによって乾燥処理する乾燥チャンバの順に順次搬送するようにしている。   When the above-described series of processing is performed on a substrate, conventionally, the substrate is placed in a horizontal state by a transfer roller arranged with the axis line horizontal, a processing chamber for processing with a processing liquid, a cleaning chamber for processing with a cleaning liquid, and air It is made to convey sequentially in order of the drying chamber which dries with a knife.

ところで、最近では液晶表示装置に用いられるガラス製の基板が大型化及び薄型化する傾向にある。そのため、基板を水平搬送すると、搬送ローラ間における基板の撓みが大きくなるため、各処理チャンバでの処理が基板の板面全体にわたって均一に行えなくなるということが生じる。   Recently, glass substrates used in liquid crystal display devices tend to be larger and thinner. For this reason, when the substrate is horizontally transported, the bending of the substrate between the transport rollers becomes large, so that processing in each processing chamber cannot be performed uniformly over the entire plate surface of the substrate.

しかも、基板の上面に多量の処理液が残留した状態で、基板が処理部から搬出されることになるため、処理液を回収して再利用する場合、処理液の消費量が多くなり、ランニングコストの上昇を招く一因になっていた。   Moreover, since the substrate is unloaded from the processing section with a large amount of processing liquid remaining on the upper surface of the substrate, when the processing liquid is recovered and reused, the consumption of the processing liquid increases and running It was one of the causes that led to an increase in cost.

そこで、最近では基板を所定の角度で傾斜させて搬送し、基板の板面に供給された処理液を基板の上面から円滑に流れ落ちるようにしている。それによって、基板とともに処理チャンバから持ち出される処理液の量を少なくしたり、基板の板面全体を均一に処理できるようにするということが行なわれている。   Therefore, recently, the substrate is transported while being inclined at a predetermined angle so that the processing liquid supplied to the plate surface of the substrate smoothly flows down from the upper surface of the substrate. As a result, the amount of processing liquid taken out of the processing chamber together with the substrate is reduced, or the entire plate surface of the substrate can be processed uniformly.

基板を洗浄処理する洗浄チャンバには、搬送される基板の上方に複数のノズルが基板の搬送方向と交差する方向に沿って一列に配置されている。各ノズルからは洗浄液が長円形状の細長いパターンで噴射される。   In a cleaning chamber for cleaning a substrate, a plurality of nozzles are arranged in a line above the substrate to be transported along a direction intersecting the substrate transport direction. The cleaning liquid is ejected from each nozzle in an oblong and elongated pattern.

従来、各ノズルからは図6に示すように洗浄液が基板Wの上面に長円形状のパターンPで噴射されていた。すなわち、各パターンPは、隣り合う洗浄液のパターンPが互いに干渉するのを防止するために、長手方向を基板Wの矢印Xで示す搬送方向と交差する方向に対して同図にθで示す角度で傾斜させるようにしている。つまり、隣り合うパターンPが干渉し合うと、洗浄効果が低下すると考えられていた。   Conventionally, as shown in FIG. 6, the cleaning liquid is ejected from each nozzle in an oval pattern P on the upper surface of the substrate W. That is, each pattern P has an angle indicated by θ in the drawing with respect to the direction intersecting the transport direction indicated by the arrow X of the substrate W in order to prevent the adjacent cleaning liquid patterns P from interfering with each other. It is made to incline with. That is, it has been thought that the cleaning effect is reduced when adjacent patterns P interfere with each other.

基板Wの搬送方向と交差する方向において、隣り合うパターンPの端部は見かけ上、同図にLで示すラップ代を有するから、基板Wの搬送方向Xと交差する方向の全長をむらなく洗浄液で洗浄することができる。   In the direction intersecting the transport direction of the substrate W, the end of the adjacent pattern P apparently has a lapping margin indicated by L in the figure, so that the entire length in the direction intersecting the transport direction X of the substrate W is uniformly distributed. Can be washed with.

しかしながら、各ノズルから噴射される洗浄液のパターンPを角度θで傾けると、基板W上において隣り合うパターンP間に隙間Gが生じてしまう。上述したように基板Wは搬送方向と交差する方向に対し、水平線に対して所定の角度で傾斜して搬送される。基板Wの上面には、基板Wを傾斜させて搬送しても、洗浄工程の前の処理工程で使用された薬液など処理液の一部が残留している。基板上に残留する処理液には処理時に生じたパーティクルが含まれている。   However, when the pattern P of the cleaning liquid ejected from each nozzle is inclined at an angle θ, a gap G is generated between the adjacent patterns P on the substrate W. As described above, the substrate W is transported while being inclined at a predetermined angle with respect to the horizontal line with respect to the direction intersecting the transport direction. Even if the substrate W is transported while being inclined, a part of the processing solution such as a chemical solution used in the processing step before the cleaning step remains on the upper surface of the substrate W. The processing liquid remaining on the substrate contains particles generated during processing.

そのため、基板が傾斜した状態で洗浄工程に搬送されてくると、基板Wに洗浄液を長円形状のパターンPで噴射しても、基板W上に残留する処理液の一部が図6に矢印Yで示すように、基板Wの傾斜方向の上方から下方に向かって流れる。つまり、処理液の一部が上記隙間Gを通り、基板Wの洗浄液が噴射されるパターンPよりも搬送方向下流側、つまり基板Wのすでに洗浄液によって洗浄された部分に流れ込むということがある。その結果、洗浄液によって洗浄された基板Wが処理液に含まれるパーティクルによって再度汚染されてしまうということがある。   Therefore, when the substrate is transported to the cleaning process in an inclined state, a part of the processing liquid remaining on the substrate W is shown in FIG. As indicated by Y, it flows from the upper side to the lower side in the tilt direction of the substrate W. That is, a part of the processing liquid may pass through the gap G and flow into the downstream side in the transport direction from the pattern P on which the cleaning liquid for the substrate W is jetted, that is, the part already cleaned by the cleaning liquid. As a result, the substrate W cleaned with the cleaning liquid may be contaminated again by particles contained in the processing liquid.

この発明は、基板を傾斜させて搬送しながら細長いパターンで噴射される洗浄液によって洗浄する場合、基板上に残留して傾斜方向上方から下方へ流れる処理液によって基板の洗浄された部位が再汚染されるのを防止した基板の処理装置及び処理方法を提供することにある。   In the present invention, when cleaning is performed with a cleaning liquid sprayed in an elongated pattern while the substrate is transported while being tilted, the cleaned portion of the substrate is re-contaminated by the processing liquid that remains on the substrate and flows downward from the upper side in the tilt direction. It is an object of the present invention to provide a substrate processing apparatus and a processing method which prevent the occurrence of the substrate.

この発明は、基板を洗浄液で洗浄処理する処理装置であって、
洗浄チャンバと、
上記基板を搬送方向と交差する方向に所定の角度で傾斜させて上記洗浄チャンバ内を搬送する搬送手段と、
搬送される基板の上方にこの基板の搬送方向と交差する方向に沿って一列に配置され上記基板に上記洗浄液を細長いパターンで噴射する複数のノズルとを具備し、
上記複数のノズルは、上記基板上に噴射される隣り合う洗浄液のパターンが上記基板の搬送方向と交差する方向に対して隙間が生じることがないよう配置されていることを特徴とする基板の処理装置にある。
The present invention is a processing apparatus for cleaning a substrate with a cleaning liquid,
A cleaning chamber;
Transport means for transporting the substrate in the cleaning chamber by tilting the substrate at a predetermined angle in a direction intersecting the transport direction;
A plurality of nozzles which are arranged in a line along a direction intersecting the transport direction of the substrate above the substrate to be transported and eject the cleaning liquid on the substrate in an elongated pattern;
The plurality of nozzles are arranged so that a gap does not occur in a direction in which a pattern of adjacent cleaning liquid sprayed on the substrate intersects a transport direction of the substrate. In the device.

上記ノズルは上記洗浄液を長円形状のパターンで噴射し、
複数のノズルは、上記パターンの長手方向を上記基板の搬送方向と交差する方向に沿わせるとともに、隣り合うパターンの端部が重なる状態で配置されることが好ましい。
The nozzle sprays the cleaning liquid in an oval pattern,
The plurality of nozzles are preferably arranged in a state in which the longitudinal direction of the pattern is along the direction intersecting the transport direction of the substrate and the ends of the adjacent patterns overlap.

一列に配置された複数のノズルが複数列設けられていて、
上記洗浄チャンバで洗浄された基板は、この基板に気体を噴射して乾燥させる乾燥チャンバに搬送されるようになっていて、
上記乾燥チャンバに搬送される直前の一列の複数のノズルは、上記基板の搬送方向上流側に向かって洗浄液を噴射するよう軸線を傾斜させて配置されていることが好ましい。
A plurality of nozzles arranged in a row are provided in a plurality of rows,
The substrate cleaned in the cleaning chamber is transported to a drying chamber for injecting gas onto the substrate and drying it.
It is preferable that the plurality of nozzles in a row immediately before being transported to the drying chamber are arranged with an axis inclined so as to inject the cleaning liquid toward the upstream side in the transport direction of the substrate.

この発明は、基板を洗浄液で洗浄処理する処理方法であって、
上記基板を搬送方向と交差する方向に所定の角度で傾斜させて搬送する工程と、
搬送される基板に対して洗浄液をこの基板の搬送方向と交差する方向に対して隙間が生じることのない細長いパターンで噴射する工程と
を具備したことを特徴とする基板の処理方法にある。
The present invention is a processing method for cleaning a substrate with a cleaning liquid,
A step of transporting the substrate inclined at a predetermined angle in a direction intersecting the transport direction;
And a step of spraying the cleaning liquid onto the substrate to be transported in a long and narrow pattern with no gap in the direction intersecting the substrate transport direction.

洗浄液によって洗浄された基板を乾燥処理する工程を有し、
上記基板は搬送経路の複数箇所で上記洗浄液によって洗浄されるとともに、乾燥処理される直前の洗浄工程では洗浄液を上記基板の搬送方向上流側に向けて噴射することが好ましい。
Having a step of drying the substrate cleaned with the cleaning liquid;
It is preferable that the substrate is cleaned with the cleaning liquid at a plurality of locations in the transport path, and the cleaning liquid is sprayed toward the upstream side of the transport direction of the substrate in the cleaning process immediately before the drying process.

この発明よれば、基板上に噴射される隣り合う洗浄液のパターン間に基板の搬送方向と交差する方向に対して隙間が生じることがない。そのため、前工程で使用されて基板の上面に残留する処理液が傾斜した基板の上方から下方に向かって流れても、その処理液が洗浄液のパターンよりも基板の搬送方向下流側に流れるのが阻止されるため、基板の洗浄液によって洗浄された部分が再汚染されことがない。   According to the present invention, there is no gap between the patterns of the adjacent cleaning liquid sprayed on the substrate with respect to the direction intersecting the substrate transport direction. Therefore, even if the processing liquid used in the previous process and remaining on the upper surface of the substrate flows downward from above the inclined substrate, the processing liquid flows downstream of the cleaning liquid pattern in the substrate transport direction. Therefore, the portion of the substrate cleaned by the cleaning liquid is not recontaminated.

以下、この発明の実施の形態を図面を参照して説明する。   Embodiments of the present invention will be described below with reference to the drawings.

図1は基板Wの処理装置の概略的構成を示し、この処理装置は箱型状の本体1を備えている。この本体1内は仕切板2によって処理チャンバ3、洗浄チャンバ4及び乾燥チャンバ5に区画されている。   FIG. 1 shows a schematic configuration of a substrate W processing apparatus, which includes a box-shaped main body 1. The inside of the main body 1 is divided into a processing chamber 3, a cleaning chamber 4 and a drying chamber 5 by a partition plate 2.

各チャンバ3〜5内には、基板Wを搬送方向と交差する方向に対し、水平状態よりも所定の角度で傾斜させて搬送する搬送手段6が設けられている。上記本体1の一端面と他端面及び仕切り板2には同じ高さ位置に上記搬送手段6によって搬送される基板Wが通過する通口7が形成されている。なお、各チャンバ3〜5に設けられる搬送手段6は同じ構成であるので、洗浄チャンバ4の搬送手段6についてだけ説明する。   In each of the chambers 3 to 5, there is provided transport means 6 that transports the substrate W at a predetermined angle with respect to the direction intersecting the transport direction from the horizontal state. The one end surface and the other end surface of the main body 1 and the partition plate 2 are formed with through-holes 7 through which the substrate W transported by the transport means 6 passes at the same height position. In addition, since the conveyance means 6 provided in each chamber 3-5 is the same structure, only the conveyance means 6 of the washing | cleaning chamber 4 is demonstrated.

すなわち、図2は洗浄チャンバ4の縦断面図であって、この洗浄チャンバ4の幅方向両端部には受け部材8が設けられている。これらの受け部材8には上記搬送手段6を構成するフレーム11が支持されている。   That is, FIG. 2 is a longitudinal sectional view of the cleaning chamber 4, and receiving members 8 are provided at both ends in the width direction of the cleaning chamber 4. These receiving members 8 support a frame 11 constituting the conveying means 6.

上記フレーム11の幅方向一端部は上記受け部材8に直接支持され、幅方向他端部は角度調整部材10を介して支持されている。それによって、上記フレーム11は上記幅方向に対して所定の角度、たとえば5〜15度の範囲内の角度で傾斜している。なお、フレーム11の傾斜角度は5〜15度の範囲内に限定されず、それ以下であっても、それ以上であっても差し支えない。   One end of the frame 11 in the width direction is directly supported by the receiving member 8, and the other end in the width direction is supported via the angle adjusting member 10. Accordingly, the frame 11 is inclined at a predetermined angle with respect to the width direction, for example, an angle within a range of 5 to 15 degrees. Note that the inclination angle of the frame 11 is not limited to the range of 5 to 15 degrees, and may be less than that or more than that.

上記フレーム11には、フレーム11の幅方向に軸線を沿わせた複数の搬送軸12が幅方向と交差する基板Wの搬送方向に沿って所定間隔で回転可能に設けられている。搬送軸12には基板Wの下面を支持する複数の搬送ローラ13が所定間隔で設けられている。したがって、搬送ローラ13に下面が支持された基板Wはフレーム11と同じ角度で傾斜して搬送される。   The frame 11 is provided with a plurality of transport shafts 12 having axes along the width direction of the frame 11 so as to be rotatable at predetermined intervals along the transport direction of the substrate W intersecting the width direction. A plurality of transport rollers 13 that support the lower surface of the substrate W are provided on the transport shaft 12 at predetermined intervals. Accordingly, the substrate W having the lower surface supported by the transport roller 13 is transported with an inclination at the same angle as the frame 11.

上記フレーム11の傾斜方向の上端側に位置する幅方向一側の外面には、伝達軸14が軸線を基板Wの搬送方向に沿わせて回転可能に架設されている。この伝達軸14の中途部には従動歯車15が設けられている。この従動歯車15には駆動歯車16が噛合している。この駆動歯車16は洗浄チャンバ4の外部に設けられた駆動源17の出力軸18に嵌着されている。   On the outer surface on one side in the width direction, which is located on the upper end side in the tilt direction of the frame 11, a transmission shaft 14 is installed so as to be rotatable along the axis of the substrate W in the conveyance direction. A driven gear 15 is provided in the middle of the transmission shaft 14. A driving gear 16 is engaged with the driven gear 15. The drive gear 16 is fitted on an output shaft 18 of a drive source 17 provided outside the cleaning chamber 4.

詳細は図示しないが、上記搬送軸12の上記伝達軸14側に位置する一端部には第1のかさ歯車が設けられている。第1のかさ歯車は上記搬送軸12に設けられた第2のかさ歯車が噛合している。したがって、上記駆動源17が作動して上記駆動歯車16及び従動歯車15を介して上記伝達軸14が回転されれば、上記第1、第2のかさ歯車を介して上記搬送軸12が回転駆動される。それによって、搬送ローラ13に支持された基板Wが搬送されるようになっている。   Although not shown in detail, a first bevel gear is provided at one end of the transport shaft 12 located on the transmission shaft 14 side. The first bevel gear meshes with the second bevel gear provided on the conveying shaft 12. Therefore, when the drive source 17 is operated and the transmission shaft 14 is rotated via the drive gear 16 and the driven gear 15, the transport shaft 12 is rotationally driven via the first and second bevel gears. Is done. As a result, the substrate W supported by the transport roller 13 is transported.

なお、フレーム11内には、搬送軸12の傾斜方向下端部に対応する位置に基板Wの傾斜方向下端面、つまり搬送方向と交差する幅方向の一端を支持するラジアルローラ19が設けられている。それによって、搬送ローラ13により搬送される基板Wは搬送方向と交差する方向に対して位置決めされる。   In the frame 11, a radial roller 19 that supports the lower end surface of the substrate W in the tilt direction, that is, one end in the width direction intersecting the transport direction, is provided at a position corresponding to the lower end portion of the transport shaft 12 in the tilt direction. . Thereby, the substrate W transported by the transport roller 13 is positioned with respect to the direction intersecting the transport direction.

図1に示すように、処理チャンバ3を搬送される基板Wの上方には、その基板Wの上面に現像液、エッチング液或いは剥離液などの処理液を噴射する複数の処理用ノズル20が処理チャンバ3の幅方向及び幅方向と交差する方向に沿って規則的に配置されている。   As shown in FIG. 1, a plurality of processing nozzles 20 for injecting a processing solution such as a developing solution, an etching solution, or a stripping solution are processed on the upper surface of the substrate W conveyed in the processing chamber 3. The chamber 3 is regularly arranged along the width direction and the direction intersecting the width direction.

処理チャンバ3で処理液によって所定の処理が行なわれた基板Wは搬送手段6によって洗浄チャンバ4に搬入される。洗浄チャンバ4内には、図2に示すように処理チャンバ6内を搬送される基板Wの上方に、基板Wの幅方向に沿う複数のノズルパイプ21が基板Wの搬送方向に対して所定間隔で、しかも軸線を搬送手段6によって搬送される基板Wの上面と平行にして配置されている。この実施の形態では、図1に示すように4本のノズルパイプ21が基板Wの搬送方向に対して所定間隔で配置されている。   The substrate W that has been subjected to the predetermined processing with the processing liquid in the processing chamber 3 is carried into the cleaning chamber 4 by the transport means 6. In the cleaning chamber 4, as shown in FIG. 2, a plurality of nozzle pipes 21 along the width direction of the substrate W are disposed above the substrate W transported in the processing chamber 6 at a predetermined interval with respect to the transport direction of the substrate W. In addition, the axis is arranged parallel to the upper surface of the substrate W transported by the transport means 6. In this embodiment, as shown in FIG. 1, four nozzle pipes 21 are arranged at a predetermined interval with respect to the transport direction of the substrate W.

各ノズルパイプ21には複数の洗浄ノズル22が所定間隔で設けられている。図1に示すように、洗浄チャンバ4内には洗浄ノズル22が4列で設けられている。洗浄ノズル22の各列を、基板Wの搬送方向上流側から下流側に向かって第1乃至第4の列L1〜L4とする。   Each nozzle pipe 21 is provided with a plurality of cleaning nozzles 22 at a predetermined interval. As shown in FIG. 1, cleaning nozzles 22 are provided in four rows in the cleaning chamber 4. Each row of the cleaning nozzles 22 is defined as first to fourth rows L1 to L4 from the upstream side toward the downstream side in the transport direction of the substrate W.

上記ノズルパイプ21はヘッダパイプ23に連通管24を介して接続されている。このヘッダパイプ23は純水などの洗浄液の供給源(図示しない)に連通している。それによって、洗浄チャンバ4内を搬送される基板Wの上面には上記各列の複数の洗浄ノズル22から洗浄液が噴射されるようになっている。   The nozzle pipe 21 is connected to the header pipe 23 via a communication pipe 24. The header pipe 23 communicates with a supply source (not shown) of cleaning liquid such as pure water. Accordingly, the cleaning liquid is ejected from the plurality of cleaning nozzles 22 in each row onto the upper surface of the substrate W transported in the cleaning chamber 4.

図3に示すように各洗浄ノズル22から基板Wの上面に噴射される洗浄液のパターンPは所定方向に沿って細長い形状、この実施の形態では長円形状となるよう、各噴射ノズル22の噴射口(図示せず)が形成されている。各列の複数の洗浄ノズル22は、それぞれの洗浄液のパターンPが基板W上で、基板Wの搬送方向Xと交差する方向に沿ってほぼ一列となるよう噴射口の向きが設定され、しかも隣り合うパターンPの端部がわずかに重なるよう、隣り合う洗浄ノズル22の間隔が設定されている。   As shown in FIG. 3, the pattern P of the cleaning liquid sprayed from the cleaning nozzles 22 onto the upper surface of the substrate W has an elongated shape along a predetermined direction, and in this embodiment, the spraying of each spray nozzle 22 has an oval shape. A mouth (not shown) is formed. The plurality of cleaning nozzles 22 in each row are set so that the direction of the ejection ports is set so that the pattern P of the respective cleaning liquid is substantially in a row along the direction intersecting the transport direction X of the substrate W on the substrate W. The interval between the adjacent cleaning nozzles 22 is set so that the ends of the matching patterns P are slightly overlapped.

図4に示すように、洗浄ノズル22の第1乃至第4の列L1〜L4のうち、基板Wの搬送方向の最も下流側に位置する第4の列L4、つまり乾燥チャンバ5に搬入される直前に基板Wを洗浄する第4の列L4の洗浄ノズル22は、軸線Oを基板Wの搬送方向上流側に向けて配置されている。   As shown in FIG. 4, among the first to fourth rows L <b> 1 to L <b> 4 of the cleaning nozzle 22, the cleaning nozzle 22 is carried into the fourth row L <b> 4 that is located on the most downstream side in the transport direction of the substrate W, that is, the drying chamber 5. The cleaning nozzles 22 in the fourth row L4 that clean the substrates W immediately before are arranged with the axis O facing the upstream side in the transport direction of the substrates W.

それによって、第4の列L4の洗浄ノズル22から基板Wに噴射された洗浄液は同図に矢印で示すように基板Wの板面で基板Wの搬送方向Xの上流側に向かって反射しやすくなる。つまり、前工程の処理液を含んだ洗浄液が基板W上で乾燥チャンバ5側に向かって反射し難くなるから、基板W上で反射することでパーティクルを含んだ洗浄液が乾燥チャンバ5内に飛散するのを防止することができる。   As a result, the cleaning liquid sprayed onto the substrate W from the cleaning nozzle 22 in the fourth row L4 is easily reflected toward the upstream side in the transport direction X of the substrate W on the plate surface of the substrate W as indicated by an arrow in FIG. Become. That is, since the cleaning liquid containing the processing liquid of the previous process is hardly reflected on the substrate W toward the drying chamber 5, the cleaning liquid containing particles is scattered in the drying chamber 5 by being reflected on the substrate W. Can be prevented.

上記乾燥チャンバ5内には基板Wの上面と下面とに向かって加圧気体を噴射する一対のエアーナイフ26が先端の噴射口を基板Wの搬送方向上流側に向けて配置されている。それによって、基板Wは乾燥チャンバ5内を搬送されることで、その上下面に付着した洗浄液が除去される、乾燥処理が行なわれる。   In the drying chamber 5, a pair of air knives 26 for injecting pressurized gas toward the upper and lower surfaces of the substrate W are disposed with the front-side injection ports directed upstream in the transport direction of the substrate W. As a result, the substrate W is transported through the drying chamber 5 to perform a drying process in which the cleaning liquid adhering to the upper and lower surfaces is removed.

このような構成の処理装置によれば、処理チャンバ3で処理液によって処理された基板Wは、洗浄チャンバ4で洗浄液によって洗浄され、ついで、乾燥チャンバ5で乾燥処理されて搬出されることになる。   According to the processing apparatus having such a configuration, the substrate W processed with the processing liquid in the processing chamber 3 is cleaned with the cleaning liquid in the cleaning chamber 4, and then dried in the drying chamber 5 and carried out. .

上記洗浄チャンバ4では、基板Wは第1乃至第4の列L1〜L4の洗浄ノズル22によって順次洗浄される。各列L1〜L4の洗浄ノズル22からは、図3に示すように洗浄液が長円形状のパターンPで、各パターンPの長軸を基板Wの搬送方向Xと交差する方向に沿わせ、しかも隣り合うパターンPの両端部が重なるように噴射される。   In the cleaning chamber 4, the substrates W are sequentially cleaned by the cleaning nozzles 22 in the first to fourth rows L1 to L4. From the cleaning nozzles 22 in each of the rows L1 to L4, the cleaning liquid is an oval pattern P as shown in FIG. 3, and the major axis of each pattern P is along the direction intersecting the transport direction X of the substrate W, and It sprays so that the both ends of the adjacent pattern P may overlap.

そのため、基板Wを洗浄チャンバ4で洗浄処理する際、基板Wが搬送方向と交差する方向に所定の角度で傾斜して搬送されることで、基板Wの板面に残留した処理液は基板Wの傾斜方向上方から下方に向かって流れる。しかしながら、その処理液は基板Wの搬送方向と交差する方向に沿って隙間なく連なる洗浄液のパターンPにより、これらのパターンPよりも基板Wの搬送方向下流側に流れ込むのが阻止され、図3に矢印Mで示すように基板Wの傾斜方向下方に向かって流れる。   Therefore, when the substrate W is cleaned in the cleaning chamber 4, the substrate W is transported at a predetermined angle in a direction crossing the transport direction, so that the processing liquid remaining on the plate surface of the substrate W is transferred to the substrate W. It flows from the upper side to the lower side. However, the processing liquid is prevented from flowing downstream of these patterns P in the transport direction of the substrate W by the pattern P of the cleaning liquid that is continuous without a gap along the direction intersecting the transport direction of the substrate W, as shown in FIG. As indicated by the arrow M, it flows downward in the tilt direction of the substrate W.

つまり、基板Wの傾斜方向上方から下方に向かって流れるパーティクルを含む処理液が、洗浄液によってすでに洗浄された、基板Wの洗浄液のパターンPよりも下流側に流れ込むことがない。そのため、基板Wを傾斜させて搬送しても、その基板Wを洗浄チャンバ1に設けられた洗浄ノズル22から噴射される洗浄液によって確実に洗浄処理することが可能となる。   That is, the processing liquid containing particles flowing from the upper side to the lower side in the tilt direction of the substrate W does not flow downstream from the pattern P of the cleaning liquid of the substrate W that has already been cleaned by the cleaning liquid. Therefore, even if the substrate W is transported while being inclined, the substrate W can be reliably cleaned with the cleaning liquid ejected from the cleaning nozzle 22 provided in the cleaning chamber 1.

上記洗浄チャンバ4には4列L1〜L4の洗浄ノズル22が設けられている。そのため、各列の洗浄ノズル22によって上述した洗浄作用が繰り返して行なわれるから、そのことによっても基板Wの洗浄を精密に行なうことができる。   The cleaning chamber 4 is provided with four rows L1 to L4 of cleaning nozzles 22. For this reason, the cleaning action described above is repeatedly performed by the cleaning nozzles 22 in each row, so that the substrate W can be precisely cleaned.

基板Wの搬送方向の最も下流側の第4の列L4の洗浄ノズル22は、図4に示すように軸線Oを基板Wの搬送方向上流側に向けて配置されている。そのため、各洗浄ノズル22から噴射されて基板Wの板面で反射する洗浄液は、洗浄チャンバ4と反対側に反射するため、洗浄チャンバ4に隣接する乾燥チャンバ5に入り込み難い。その結果、乾燥チャンバ5がパーティクルを含む洗浄液によって汚染されるのを防止することができる。   The cleaning nozzles 22 in the fourth row L4 on the most downstream side in the transport direction of the substrate W are arranged with the axis O directed upstream in the transport direction of the substrate W as shown in FIG. Therefore, the cleaning liquid sprayed from each cleaning nozzle 22 and reflected by the plate surface of the substrate W is reflected to the opposite side of the cleaning chamber 4, so that it is difficult to enter the drying chamber 5 adjacent to the cleaning chamber 4. As a result, it is possible to prevent the drying chamber 5 from being contaminated by the cleaning liquid containing particles.

図5は洗浄ノズル22から基板Wに噴射されるパターンPの向きと間隔、つまり洗浄ノズル22の配置を同図にA〜Cで示すようにした場合の洗浄効果の実験結果を示すグラフである。配置AはパターンPの長軸を基板Wの搬送方向と交差する方向に沿わせ、かつ隣り合うパターンPの端部を重ねた状態の場合である。配置Bは隣り合うパターンPの長軸方向の一端、つまり基板Wの傾斜方向下方に位置する一端を基板Wの搬送方向と交差する方向に対して基板Wの搬送方向上流側に向けて所定の角度で傾斜させ、かつ隣り合うパターンP間に隙間ができる状態とした場合である。配置Cは配置Bに対してパターンPの一端を逆方向である、基板Wの搬送方向下流側に向けて傾斜させた場合である。   FIG. 5 is a graph showing experimental results of the cleaning effect when the direction and interval of the pattern P sprayed from the cleaning nozzle 22 onto the substrate W, that is, the arrangement of the cleaning nozzle 22 is shown by AC in the same figure. . The arrangement A is a case where the major axis of the pattern P is along the direction intersecting the transport direction of the substrate W and the end portions of the adjacent patterns P are overlapped. Arrangement B is a predetermined direction in which one end in the major axis direction of adjacent patterns P, that is, one end located below the inclination direction of substrate W is directed upstream in the transport direction of substrate W with respect to the direction intersecting the transport direction of substrate W. This is a case where the gap is inclined at an angle and a gap is formed between adjacent patterns P. The arrangement C is a case where one end of the pattern P is inclined in the opposite direction with respect to the arrangement B toward the downstream side in the transport direction of the substrate W.

これら3つの状態で1列の洗浄ノズル22によって基板Wを洗浄し、洗浄後に基板Wに残留するパーティクル数をカウントしたところ、配置Aが最も少なく、ついで配置B、配置Cの順となった。つまり、洗浄ノズル22から噴射される洗浄液のパターンPを、基板Wの搬送方向と交差する方向に隙間が生じることなく配置することで、最も高い洗浄効果が得られることが確認された。   In these three states, the substrate W was cleaned by one row of the cleaning nozzles 22 and the number of particles remaining on the substrate W after the cleaning was counted. As a result, the arrangement A was the smallest, followed by the arrangement B and the arrangement C in this order. That is, it was confirmed that the highest cleaning effect can be obtained by arranging the pattern P of the cleaning liquid ejected from the cleaning nozzle 22 without causing a gap in the direction intersecting the transport direction of the substrate W.

なお、上記一実施の形態では洗浄チャンバに4列の洗浄ノズルを設けたが、その列の数はなんら限定されず、5列以上或いは3列以下であっても差し支えない。また、洗浄チャンバの上流側に処理チャンバがある場合について説明したが、基板を複数のチャンバで順次精度よく洗浄する場合であってもこの発明を適用することができる。   In the above-described embodiment, four rows of cleaning nozzles are provided in the cleaning chamber. However, the number of the rows is not limited at all, and may be 5 rows or more or 3 rows or less. Further, the case where the processing chamber is provided on the upstream side of the cleaning chamber has been described, but the present invention can be applied even when the substrate is sequentially cleaned with a plurality of chambers with high accuracy.

この発明の一実施の形態を示す処理装置の概略的説明図。BRIEF DESCRIPTION OF THE DRAWINGS Schematic explanatory drawing of the processing apparatus which shows one embodiment of this invention. 処理チャンバの縦断面図。The longitudinal cross-sectional view of a processing chamber. 基板に噴射される洗浄液のパターンを示す説明図。Explanatory drawing which shows the pattern of the washing | cleaning liquid sprayed on a board | substrate. 洗浄チャンバに設けられた最終列の洗浄ノズルを示す説明図。Explanatory drawing which shows the washing | cleaning nozzle of the last line provided in the washing | cleaning chamber. この発明の方式と従来の方式で基板を洗浄したときの洗浄効果を比較したグラフ。The graph which compared the cleaning effect when wash | cleaning a board | substrate by the system of this invention and the conventional system. 従来の方式で基板を洗浄する洗浄液のパターンを示す説明図。Explanatory drawing which shows the pattern of the washing | cleaning liquid which wash | cleans a board | substrate by the conventional system.

符号の説明Explanation of symbols

3…処理チャンバ、4…洗浄チャンバ、5…乾燥チャンバ、6…搬送手段、22…洗浄ノズル、W…基板、P…パターン。   DESCRIPTION OF SYMBOLS 3 ... Processing chamber, 4 ... Cleaning chamber, 5 ... Drying chamber, 6 ... Conveying means, 22 ... Cleaning nozzle, W ... Substrate, P ... Pattern.

Claims (5)

基板を洗浄液で洗浄処理する処理装置であって、
洗浄チャンバと、
上記基板を搬送方向と交差する方向に所定の角度で傾斜させて上記洗浄チャンバ内を搬送する搬送手段と、
搬送される基板の上方にこの基板の搬送方向と交差する方向に沿って一列に配置され上記基板に上記洗浄液を細長いパターンで噴射する複数のノズルとを具備し、
上記複数のノズルは、上記基板上に噴射される隣り合う洗浄液のパターンが上記基板の搬送方向と交差する方向に対して隙間が生じることがないよう配置されていることを特徴とする基板の処理装置。
A processing apparatus for cleaning a substrate with a cleaning liquid,
A cleaning chamber;
Transporting means for transporting the cleaning chamber by tilting the substrate at a predetermined angle in a direction intersecting the transporting direction;
A plurality of nozzles which are arranged in a line along a direction intersecting the transport direction of the substrate above the substrate to be transported and eject the cleaning liquid on the substrate in an elongated pattern;
The plurality of nozzles are arranged so that a gap does not occur in a direction in which a pattern of adjacent cleaning liquid sprayed on the substrate intersects a transport direction of the substrate. apparatus.
上記ノズルは上記洗浄液を長円形状のパターンで噴射し、
複数のノズルは、上記パターンの長手方向を上記基板の搬送方向と交差する方向に沿わせるとともに、隣り合うパターンの端部が重なる状態で配置されることを特徴とする請求項1記載の基板の処理装置。
The nozzle sprays the cleaning liquid in an oval pattern,
2. The substrate according to claim 1, wherein the plurality of nozzles are arranged in a state in which a longitudinal direction of the pattern is along a direction intersecting a transport direction of the substrate, and ends of adjacent patterns are overlapped with each other. Processing equipment.
一列に配置された複数のノズルが複数列設けられていて、
上記洗浄チャンバで洗浄された基板は、この基板に気体を噴射して乾燥させる乾燥チャンバに搬送されるようになっていて、
上記乾燥チャンバに搬送される直前の一列の複数のノズルは、上記基板の搬送方向上流側に向かって洗浄液を噴射するよう軸線を傾斜させて配置されていることを特徴とする請求項1記載の基板の処理装置。
A plurality of nozzles arranged in a row are provided in a plurality of rows,
The substrate cleaned in the cleaning chamber is transported to a drying chamber for injecting gas onto the substrate and drying it.
The plurality of nozzles in a row immediately before being transported to the drying chamber are arranged with an axis inclined so as to inject cleaning liquid toward the upstream side of the transport direction of the substrate. Substrate processing equipment.
基板を洗浄液で洗浄処理する処理方法であって、
上記基板を搬送方向と交差する方向に所定の角度で傾斜させて搬送する工程と、
搬送される基板に対して洗浄液をこの基板の搬送方向と交差する方向に対して隙間が生じることのない細長いパターンで噴射する工程と
を具備したことを特徴とする基板の処理方法。
A processing method for cleaning a substrate with a cleaning liquid,
A step of transporting the substrate inclined at a predetermined angle in a direction intersecting the transport direction;
Spraying the cleaning liquid onto the substrate to be transported in a long and narrow pattern with no gap in the direction intersecting the substrate transport direction.
洗浄液によって洗浄された基板を乾燥処理する工程を有し、
上記基板は搬送経路の複数箇所で上記洗浄液によって洗浄されるとともに、乾燥処理される直前の洗浄工程では洗浄液を上記基板の搬送方向上流側に向けて噴射することを特徴とする請求項4記載の基板の処理方法。
Having a step of drying the substrate cleaned with the cleaning liquid;
5. The substrate according to claim 4, wherein the substrate is cleaned with the cleaning liquid at a plurality of locations in the transport path, and the cleaning liquid is sprayed toward the upstream side in the transport direction of the substrate in a cleaning process immediately before being dried. Substrate processing method.
JP2005112371A 2005-04-08 2005-04-08 Treatment apparatus and treatment method of substrate Pending JP2006289240A (en)

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