KR101373784B1 - Substrate cleaning apparatus, substrate cleaning method, display manufacturing apparatus and display manufacturing method - Google Patents

Abstract

An object of the present invention is to provide a substrate cleaning apparatus and a substrate cleaning method capable of reducing the number of cleaning processes and preventing the reattachment of contaminant particles to the substrate, a display apparatus manufacturing apparatus, and a manufacturing method of the display apparatus. It is done.
The board | substrate cleaning apparatus 1 which concerns on embodiment removes an oxide film to the conveyance part 2 which conveys the board | substrate W, and the to-be-cleaned surface S of the board | substrate W conveyed by this conveyance part 2. It is provided with a supply nozzle 3 which supplies the washing | cleaning liquid which has an oxidizing gas in a dissolved form and a micro bubble state in the possible liquid, and this supply nozzle 3 is a micro bubble which reached on the to-be-cleaned surface S, and a size change is carried out. The cleaning liquid is supplied at a flow rate that moves to the outer edge of the substrate W while suppressing it.

Description

Substrate cleaning device, substrate cleaning method, display device manufacturing device and display device manufacturing method {SUBSTRATE CLEANING APPARATUS, SUBSTRATE CLEANING METHOD, DISPLAY MANUFACTURING APPARATUS AND DISPLAY MANUFACTURING METHOD}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a substrate cleaning apparatus and a substrate cleaning method for cleaning a substrate with a cleaning liquid, a manufacturing apparatus for a display device, and a manufacturing method for a display device.

In a manufacturing process, such as a liquid crystal display device and a semiconductor device, a board | substrate washing apparatus supplies a washing | cleaning liquid with respect to the substrate surface, such as a glass substrate and a semiconductor wafer, and wash | cleans the substrate surface. In this board | substrate cleaning apparatus, the board | substrate cleaning apparatus which supplies a cleaning liquid to the surface of the board | substrate exists, for example, conveying the board | substrate which is a cleaning target.

In substrate cleaning using a cleaning liquid, for example, when cleaning a substrate by a lift-off method, removal of organic matter and formation of an oxide film by ozone (O ₃ ) water is performed, followed by removal of the oxide film by a dilute hydrofluoric acid solution (DHF solution). (For example, refer patent document 1). This removes contaminant particles on the substrate surface.

Japanese Patent Laid-Open No. 2002-131777

However, in the substrate cleaning described above, two cleaning steps are required, a process of removing organic matter and forming an oxide film by ozone water and a step of removing an oxide film by a dilute hydrofluoric acid solution. In addition, after removing the oxide film by the dilute hydrofluoric acid solution, the contaminated particles once removed may be reattached to the substrate surface.

SUMMARY OF THE INVENTION The present invention has been made in view of the above matters, and an object thereof is to reduce the number of cleaning steps and further to prevent reattachment of contaminant particles to a substrate, and a display device and a display device. A manufacturing apparatus and a manufacturing method of a display apparatus are provided.

The 1st characteristic which concerns on embodiment of this invention WHEREIN: A substrate cleaning apparatus WHEREIN: The oxidizing gas is melt | dissolved in the liquid which can remove an oxide film in the conveyance part which conveys a board | substrate, and the to-be-cleaned surface of the board | substrate conveyed by a conveyance part, The supply nozzle which supplies the cleaning liquid which has a bubble state, and supplies a cleaning liquid at the flow velocity which the micro bubble which reached the to-be-cleaned surface moves to the outer edge of a board | substrate, suppressing a size change.

According to a second aspect of the present invention, in a substrate cleaning apparatus, an oxidizing gas is dissolved in a liquid capable of removing an oxide film and dissolved in a liquid to be cleaned on a conveyance portion for conveying a substrate and a substrate conveyed by the conveyance portion. And a plurality of supply nozzles for supplying each of the cleaning liquids in the bubble state, and the plurality of supply nozzles are provided side by side in a direction crossing the substrate conveyance direction along the surface to be cleaned of the substrate, and parallel to the surface to be cleaned of the substrate. It inclines in the same direction with respect to the conveyance direction of a board | substrate in a plane, respectively, and inclines in the same direction with respect to the to-be-cleaned surface of a board | substrate, respectively.

According to a third aspect of the present invention, in a substrate cleaning method, an oxidizing gas is dissolved in a liquid capable of removing an oxide film and dissolved in an oxide film-removable surface on a conveying part for conveying a substrate and a substrate to be conveyed by the conveying part. The microbubble which wash | cleans a board | substrate using the board | substrate cleaning apparatus provided with the supply nozzle which supplies the washing | cleaning liquid which has a bubble state to the to-be-cleaned surface of the board | substrate conveyed by a conveyance part by a supply nozzle is carried out. The cleaning liquid is supplied at a flow rate that moves to the outer edge of the substrate while suppressing the size change.

According to a fourth aspect of the present invention, in a substrate cleaning method, an oxidizing gas is dissolved in a liquid that can be removed from an oxide film on a surface to be cleaned by a conveyance section for transporting the substrate and a substrate transported by the transport section. The substrate is cleaned by using a substrate cleaning apparatus having a plurality of supply nozzles for supplying the cleaning liquid having a bubble state, respectively, and the plurality of supply nozzles are arranged side by side in the direction crossing the substrate conveyance direction along the surface to be cleaned of the substrate. And inclined in the same direction with respect to the transport direction of the substrate in a plane parallel to the surface to be cleaned of the substrate, respectively, inclined in the same direction with respect to the surface to be cleaned of the substrate, by a plurality of supply nozzles, The cleaning liquid is supplied to the surface to be cleaned of the substrate to be conveyed.

A fifth feature according to an embodiment of the present invention includes a substrate cleaning device for cleaning a substrate used in a display device, wherein the substrate cleaning device includes the first feature or the second device described above. It is a board | substrate cleaning apparatus based on a characteristic.

A sixth feature according to an embodiment of the present invention includes a substrate cleaning step of cleaning a substrate used in a display device in the method of manufacturing a display device, and in the substrate cleaning step, the above-described third feature or fourth The substrate is cleaned using the substrate cleaning method according to the feature.

According to any one of the first to sixth features described above, the number of cleaning steps can be reduced, and re-adhesion of contaminant particles to the substrate can be prevented.

BRIEF DESCRIPTION OF THE DRAWINGS The figure which shows schematic structure of the board | substrate cleaning apparatus which concerns on 1st Embodiment of this invention.
FIG. 2 is a first explanatory diagram for explaining a cleaning process of substrate cleaning performed by the substrate cleaning apparatus shown in FIG. 1. FIG.
3 is a second explanatory diagram for explaining the above-described cleaning process.
4 is a third explanatory diagram for explaining the above-described cleaning process.
FIG. 5 is a plan view showing a plurality of supply nozzles included in the substrate cleaning apparatus according to the second embodiment of the present invention. FIG.
FIG. 6 is a side view illustrating the supply nozzle shown in FIG. 5. FIG.
7 is a first explanatory diagram for explaining a manufacturing step of the amorphous silicon thin film transistor according to the third embodiment of the present invention.
FIG. 8 is a second explanatory diagram for explaining a manufacturing process following the foregoing FIG. 7; FIG.
FIG. 9 is a third explanatory diagram for explaining a manufacturing process following the foregoing FIG. 8. FIG.
10 is a first explanatory diagram for illustrating a manufacturing step of the polysilicon thin film transistor according to the fourth embodiment of the present invention.
FIG. 11 is a second explanatory diagram for explaining a manufacturing process following the aforementioned FIG. 10. FIG.
FIG. 12 is a third explanatory diagram for explaining a manufacturing process following the aforementioned FIG. 11. FIG.

(First embodiment)

EMBODIMENT OF THE INVENTION The 1st Embodiment of this invention is described with reference to FIGS.

The substrate cleaning apparatus 1 (refer FIG. 1) which concerns on 1st Embodiment of this invention is provided as a part of the manufacturing apparatus which manufactures the liquid crystal display which is a display apparatus, and the manufacturing apparatus of this display apparatus is a board | substrate W ) A manufacturing apparatus (not shown) which manufactures a TFT circuit and electrode pattern for liquid crystal drive, a light distribution film forming apparatus (not shown) which forms a light distribution film on the board | substrate W in which TFT circuit, an electrode pattern, etc. were formed, and an alignment film A liquid crystal material (not shown) for forming a frame-shaped seal that surrounds the display area of each cell unit on the formed substrate W, and a liquid crystal material on the display area of each cell unit of the substrate W on which the seal is formed. Liquid crystal supply apparatus (not shown) which drips the liquid crystals, a substrate bonding apparatus (not shown) which bonds the board | substrate W on which the liquid crystal material was dripped, and another board | substrate, and the seal hardening apparatus (not shown) which hardens a seal after bonding a board | substrate together. Etc. And, and and a substrate cleaning system (1) for performing the cleaning in the required point in the process of moving the substrate between the respective devices in the manufacture, and apparatus.

As shown in FIG. 1, the board | substrate cleaning apparatus 1 which concerns on 1st Embodiment is the conveyance part 2 which conveys the board | substrate W, and the board | substrate W conveyed by this conveyance part 2 A supply nozzle 3 for supplying a cleaning liquid to the surface to be cleaned S, a pressurized dissolving portion 4 for dissolving gas in the cleaning liquid, a pump 5 for feeding liquid, and a liquid supply portion 6 for supplying a cleaning liquid. And a gas supply part 7 for supplying gas, and a control part 8 for controlling each part.

The conveyance part 2 has the some roller 2a arranged in parallel with each other, the rotating motor 2b etc. which are a drive source which rotates these rollers 2a. Each roller 2a is rotatably provided, and is arranged at equal intervals. The rotary motor 2b is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. This conveyance part 2 rotates each roller 2a by the rotation motor 2b, and moves the rectangular substrate W arrange | positioned on these rollers 2a in the direction of the arrow A in FIG. Let's do it.

The supply nozzle 3 is provided above the conveyance part 2, and sprays a washing | cleaning liquid toward the to-be-cleaned surface S of the board | substrate W moving by the conveyance part 2, and this to-be-cleaned surface S ) To feed on. As the supply nozzle 3, for example, a hydraulic nozzle (a hydraulic nozzle) for injecting a cleaning liquid is used.

The pressure dissolving part 4 is connected to the supply nozzle 3 by the piping 11 which becomes a liquid supply flow path, dissolves gas in a washing | cleaning liquid under high pressure, and supplies the washing | cleaning liquid in which the gas melt | dissolved. Supply through the pipe (11). This pressurized dissolution part 4 functions as a dissolution part in which gas is dissolved in the washing liquid.

In the pipe 11, a valve 11a for adjusting the flow rate is provided in the vicinity of the supply nozzle 3. This valve 11a is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. In addition, the pipe 11 is provided with a flow meter 11b for measuring the flow rate. This flowmeter 11b is electrically connected to the control part 8, and the measurement result is input to the control part 8.

Here, when the valve 11a is opened, the washing | cleaning liquid containing dissolved gas is injected from the supply nozzle 3. At this time, since the washing | cleaning liquid is pressure-released to atmospheric pressure, and the pressure-releasing washing | cleaning liquid becomes supersaturated with respect to dissolved gas, a lot of micro bubbles generate | occur | produce in this washing liquid. Therefore, the supply nozzle 3 injects the washing | cleaning liquid toward the to-be-cleaned surface S of the moving board | substrate W, and supplies the washing | cleaning liquid containing a micro bubble on the to-be-cleaned surface S. FIG.

The microbubbles are microbubbles including the concepts of microbubbles (MB), micronanobubbles (MNB), nanobubbles (NB), and the like. For example, microbubbles are bubbles having a diameter of 10 μm to several tens of μm, micro nanobubbles are bubbles having a diameter of several hundred nm to 10 μm, and nanobubbles are bubbles having a diameter of several hundred nm or less.

The pump 5 is provided upstream from the pressurized dissolution part 4 in the liquid supply flow passage, and serves as a drive source for supplying the cleaning liquid to the supply nozzle 3. This pump 5 is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG.

The liquid supply part 6 is connected to the pressurized dissolution part 4 via the pump 5 by the piping 12 used as a liquid supply flow path, and supplies liquid to the pressurized dissolution part 4. Here, as a liquid, the liquid which can remove an oxide film, for example, a fluoric acid (DHF) solution is used. In addition to these, it is possible to use a surfactant or the like.

The gas supply part 7 is connected in the middle of the piping 12 of a liquid supply flow path by the piping 13 used as a gas supply flow path, and supplies a gas to the cleaning liquid which passes through this piping 12. As the gas, an oxidizing gas such as ozone (O ₃ ) is used.

The pipe 13 is provided with a valve 13a for adjusting the flow rate. This valve 13a is electrically connected to the control part 8, and the drive is controlled by the control part 8. As shown in FIG. Moreover, the flowmeter 13b which measures the flow volume is provided in the piping 13. This flowmeter 13b is electrically connected to the control part 8, and the measurement result is input to the control part 8. As shown in FIG.

The control part 8 is equipped with the microcomputer which centrally controls each part, and the memory | storage part which memorize | stores the board | substrate cleaning information, various programs, etc. concerning substrate cleaning. The controller 8 carries the substrate W on the substrate cleaning information or the various programs, while the substrate W is conveyed by the conveying unit 2 while being cleaned by the supply nozzle 3. ) And sprays the cleaning liquid toward the to-be-cleaned surface S and has ozone, which is an oxidizing gas, in the dissolved state and the microbubble state in a cleaning solution containing a plurality of micro bubbles, specifically Substrate cleaning to supply the cleaning liquid is performed. In addition, the generation amount of micro bubbles can be changed by adjusting the opening degree of the valve 13a by the control part 8, and adjusting the amount of gas supplied to a washing | cleaning liquid.

When the above-mentioned cleaning liquid is supplied onto the surface to be cleaned S of the substrate W, as shown in FIG. 2, the organic matter F1 on the surface to be cleaned S is removed by ozone O _{3 in the} cleaning liquid. The surface to be cleaned S is modified by this ozone (O ₃ ), and an oxide film (F ₂ ) is formed on the surface to be cleaned (S). As a result, the polluted particles M covered with the organic substance F1 are covered with the oxide film F2, and the polluted particles M existing on the organic substance F1 are oxidized by ozone (O ₃ ) to form a metal oxide. (Ma) becomes. 3, the oxide film F2 on the surface to be cleaned S is removed by hydrogen fluoride (HF) in the cleaning liquid. As a result, the contaminated particles M and the metal oxide Ma covered with the oxide film F2 are removed on the surface to be cleaned S. In addition, ozone (O ₃ ) reacts with organic matter (F1) and decomposes, thereby generating CO ₂ , CO, and H ₂ O (see FIG. 2).

As shown in FIG. 4, a plurality of micro bubbles having a negative potential are attached to a plurality of contaminating particles (for example, aluminum particles) M having a positive potential, and surround the contaminating particles M. As shown in FIG. At this time, when the substrate W is at a positive potential, a plurality of micro bubbles having a negative potential are attached to the surface to be cleaned S of the substrate W. As a result, the plurality of micro bubbles surrounding the contaminated particles M are displaced with the plurality of micro bubbles on the surface to be cleaned S of the substrate W, and the contaminated particles M once removed are removed from the substrate W. Reattachment to the surface to be cleaned S is prevented. In addition, even when the substrate W is at a negative potential, the microbubbles surrounding the contaminated particles M are repelled with the potential to be cleaned on the surface S of the substrate W, so that the surface to be cleaned S of the substrate W is Reattachment of the contaminated particles M to) is prevented.

These three phenomena (developing as shown in Figs. 2, 3 and 4) occur in each position on the surface to be cleaned S of the substrate W in sequence. Thereby, since the removal of the organic substance by ozone, the formation of an oxide film, and the removal of the oxide film by a dilute hydrofluoric acid solution are performed simultaneously, the number of washing processes can be reduced. In addition, since the plurality of micro bubbles adhere to the contaminated particles M and surround the contaminated particles M, the contaminated particles M once removed are reattached to the surface to be cleaned S of the substrate W. You can prevent it.

Here, in order to improve the cleaning performance which wash | cleans the to-be-cleaned surface S of the board | substrate W with the cleaning liquid containing a micro bubble, the micro bubble contained in the cleaning liquid injected from the supply nozzle 3 is a board | substrate W. After reaching the to-be-cleaned surface S, it is important to reach the outer edge of the board | substrate W, for example, maintaining the diameter, suppressing the size change. Since the microbubbles on the surface to be cleaned S may grow larger in conjunction with other microbubbles or disappear as time passes, they may not reach the outer edge of the surface S to be cleaned while maintaining their diameter. have. In this case, the above-mentioned prevention effect of reattachment becomes inadequate, and the washing | cleaning ability falls. In addition, in order to improve the washing | cleaning ability by the three above-mentioned phenomenon further, the washing | cleaning liquid on the to-be-cleaned surface S of the board | substrate W must be substituted sequentially.

For example, when the cleaning apparatus of the type which mounts the circular substrate W on the stage, rotates the stage with the center of the stage as the rotation center, and supplies the cleaning liquid to the substrate W on the stage, the substrate W The cleaning liquid supplied on the) spreads toward the outer edge of the substrate W by the centrifugal force caused by the rotation of the substrate W. In this case, the cleaning liquid may be simply supplied near the center of the surface to be cleaned S of the substrate W. However, when the substrate W is conveyed in one direction as in the first embodiment of the present invention, the substrate W Note the spread of the cleaning liquid on the surface to be cleaned (S).

Therefore, in the first embodiment of the present invention, the flow velocity of the cleaning liquid jetted by the supply nozzle 3 allows the microbubbles that reach the surface to be cleaned S of the substrate W to be suppressed in size change, i.e., allowable. It is set to the flow velocity which moves to the outer edge of the board | substrate W, maintaining the permissible size which is the size within a range. For example, this flow rate is set to the flow rate which moves to the outer edge of the board | substrate W, maintaining the diameter of a micro bubble. As a set value for realizing this flow velocity, what was calculated | required by experiment previously is memorize | stored in the memory | storage part with the control part 8, and the control part 8 moves the valve 11a to the opening degree based on this set value. Open. As a result, the supply nozzle 3 injects the cleaning liquid at the above-described flow rate. In addition, when only the adjustment of the flow rate by opening the valve 11a is insufficient, the control unit 8 further controls the pump 5 in accordance with the flow rate measured by the flow meter 11b. It is possible to adjust the liquid supply force by using a) and adjust the flow rate to the above-described set value.

When the cleaning liquid is injected from the supply nozzle 3 at the above-described flow rate, the plurality of micro bubbles in the cleaning liquid each reach the to-be-cleaned surface S of the substrate W, and then the outside of the substrate W while maintaining the diameter. Reach to the edge As a result, many microbubbles can reliably surround the contaminated particles M removed on the surface to be cleaned S, so that the contaminated particles M once removed are the surfaces to be cleaned S of the substrate W. ) Can be prevented from reattaching. In addition, reaching the outer edge of the substrate W while keeping a large number of micro bubbles leads to obtaining a flow rate at which the cleaning liquid on the surface to be cleaned S can be reliably replaced. The above-mentioned three phenomena occurring at each location on the c) may be promoted to improve the washing ability.

As described above, according to the first embodiment of the present invention, the cleaning liquid has ozone, which is an oxidizing gas, in the dissolved state and the microbubble state in the rare hydrofluoric acid solution that is an oxide film-removable liquid. It is supplied to the to-be-cleaned surface S of the board | substrate W by 3). Thereby, since the removal of the organic substance by ozone, the formation of an oxide film, and the removal of the oxide film by a dilute hydrofluoric acid solution are performed simultaneously, the number of washing processes can be reduced. Further, by the supply nozzle 3, the microbubbles that reach the surface to be cleaned S of the substrate W are moved to the outer edge of the substrate W while, for example, maintaining the diameter while suppressing the size change. Since the cleaning liquid is sprayed and the cleaning liquid is supplied onto the surface to be cleaned S of the substrate W, the contaminant particles M removed on the surface to be cleaned S are reliably surrounded by a large number of micro bubbles, and thus are removed once. The contaminated particles M can be reliably prevented from being reattached to the surface to be cleaned S of the substrate W.

(Second Embodiment)

A second embodiment of the present invention will be described with reference to FIGS. 5 and 6.

The second embodiment of the present invention is basically the same as the first embodiment. In 2nd Embodiment, the difference with 1st Embodiment is demonstrated, the part same as the part demonstrated in 1st Embodiment is represented by the same code | symbol, and the description is abbreviate | omitted.

In the substrate cleaning apparatus 1 according to the second embodiment of the present invention, as shown in FIG. 5, a plurality of supply nozzles 3 are provided. These supply nozzles 3 line up in the direction which intersects the conveyance direction (direction of arrow A in FIG. 5) of the board | substrate W along the to-be-cleaned surface S of the board | substrate W, for example, a direction orthogonal to a conveyance direction. They are provided side by side, and are inclined in the same direction with respect to the conveyance direction of the board | substrate W in the plane parallel to the to-be-cleaned surface S of the board | substrate W, respectively. In addition, each supply nozzle 3 is inclined in the same direction with respect to the to-be-cleaned surface S of the board | substrate W, respectively, as shown in FIG. At this time, in each supply nozzle 3, the supply port which supplies a washing | cleaning liquid is toward the downstream side of a conveyance direction.

Here, the substrate W tends to be enlarged in the future, and as the size increases, a plurality of supply nozzles 3 are provided. However, as described in the above-described first embodiment, attention should be paid to the spread of the cleaning liquid on the surface to be cleaned S of the substrate W, and the adjacent supply is simply provided by simply providing a plurality of supply nozzles 3. Since the cleaning liquids injected from the nozzle 3 interfere with each other, the microbubbles that reach the to-be-cleaned surface S of the substrate W are less likely to reach the outer edge of the substrate W while suppressing the size change. It becomes difficult to prevent reattachment of the contaminated particle M to the to-be-cleaned surface S of (W).

Therefore, as described above, each supply nozzle 3 is arranged side by side in a direction orthogonal to the conveying direction (direction of arrow A in FIG. 5) of the substrate W along the surface to be cleaned S of the substrate W. As shown in FIG. It is provided, and in the plane parallel to the to-be-cleaned surface S of the board | substrate W, each inclines by the angle (theta) 1 in the same direction with respect to the conveyance direction of the board | substrate W, and also the to-be-cleaned surface S of the board | substrate W Are inclined by an angle θ2 in the same direction. As a result, the cleaning liquids injected from the adjacent supply nozzles 3 flow in the same direction on the surface to be cleaned S of the substrate W, and the cleaning liquids are prevented from interfering with each other. Thus, the surface to be cleaned S of the substrate W is prevented. The microbubbles which have reached to easily reach the outer edge of the substrate W while suppressing the size change, and can restrain the reattachment of the contaminated particles M to the surface to be cleaned S of the substrate W. .

Moreover, in the inclination angle (theta) 1 with respect to the conveyance direction of the board | substrate W in the plane parallel to the to-be-cleaned surface S, the cleaning liquids sprayed from the adjacent supply nozzle 3 carry out the to-be-cleaned surface S of the board | substrate W. FIG. It sets so that it may incline by the angle (theta) 1 in the same direction with respect to the conveyance direction of the board | substrate W in an image, respectively. The angle θ1 is set according to the size of the supply range in which the cleaning liquid injected from the supply nozzle 3 directly contacts the surface to be cleaned S. In addition, since the washing | cleaning liquid injected from the supply nozzle 3 spreads conically, since the supply range affects the separation distance of the supply nozzle 3 and the board | substrate W, this separation distance is also considered.

As described above, according to the second embodiment of the present invention, the same effects as in the first embodiment can be obtained. Furthermore, each supply nozzle 3 is provided in parallel with the to-be-cleaned direction of the board | substrate W along the to-be-cleaned surface S of the board | substrate W as mentioned above, and is to-be-cleaned surface of the board | substrate W In the plane parallel to (S), it inclines in the same direction with respect to the conveyance direction of the board | substrate W, respectively, and inclines in the same direction with respect to the to-be-cleaned surface S of the board | substrate W, respectively. When the cleaning liquid is supplied to the to-be-cleaned surface S of the board | substrate W by these supply nozzles 3, the cleaning liquids sprayed from the adjacent supply nozzle 3 are in the same direction on the to-be-cleaned surface S of the board | substrate W. FIG. Since the flow of the cleaning liquids is prevented from interfering with each other, the microbubbles that reach the surface to be cleaned S of the substrate W easily reach the outer edges of the substrate W while suppressing the size change, and thus the substrate W Reattachment of the contaminated particle M to the surface to be cleaned S of () can be suppressed.

(Third Embodiment)

A third embodiment of the present invention will be described with reference to Figs. 7A to 7C, Figs. 8A to 8C, and Figs. 9A and 9B. 7-9 is sectional drawing which shows an example of the manufacturing method of an amorphous silicon thin film transistor (TFT) in order of a manufacturing process, In the 3rd Embodiment of this invention, it applies to the board | substrate cleaning apparatus 1 which concerns on 1st Embodiment. The application example which applied the substrate cleaning method to the manufacturing method of an amorphous silicon thin film transistor is demonstrated.

First, as shown in FIG. 7A, the gate electrode 112 is formed on the glass substrate 111. The gate electrode 112 is formed on the glass substrate 111 by depositing a conductive material (electrode material) having a low resistance using a sputtering method or a vapor deposition method to form a conductive layer, and then forming a resist pattern film on the conductive layer. It can form by forming the said conductive layer by photolithography which uses this resist pattern film as a mask. The gate electrode 112 is patterned, for example, in an island shape.

In the case of manufacturing an active matrix substrate as the thin film transistor substrate (TFT substrate) including the TFT, the gate layer and the gate electrode 112 can be patterned simultaneously by patterning the conductive layer.

Examples of the conductive material include low-resistance metals such as aluminum, titanium, tantalum, molybdenum, indium tin oxide, tin oxide, tungsten, copper and chromium and alloys thereof, but are not limited thereto. The gate line and the gate electrode 112 may be formed in a single layer or may have a laminated structure in which a plurality of layers made of the conductive material are combined.

In addition, you may use dry etching or wet etching for the said patterning.

Subsequently, as shown in FIG. 7B, the gate insulating layer 113 and the amorphous silicon layer containing silicon nitride or the like are covered by the plasma CVD method or the sputtering method so as to cover the gate electrode 112, for example. An ohmic contact layer 115 containing n ⁺ silicon doped with an n-type impurity such as 114 or phosphorus is successively formed in this order from the glass substrate 111 side.

Thereafter, as shown in FIG. 7C, the amorphous silicon layer 114 and the ohmic contact layer 115 are etched.

In addition, the etching of the amorphous silicon layer 114 and the ohmic contact layer 115, for example, chlorine gas, or hydrogen chloride and sulfur hexafluoride-based gas, such as dry etching method, or hydrofluoric acid (HF) and nitric acid (HNO ₃ ) It can also be carried out by the mixed acid water (H ₂ O) or acetic acid (CH ₃ COOH) wet etching method using an aqueous solution to an etching solution diluted with.

In addition, the resist mask used for the said etching is peeled off using the peeling liquid containing organic alkali, etc. after the said etching. FIG. 7C illustrates a state in which the resist mask is removed after patterning two layers of the amorphous silicon layer 114 and the ohmic contact layer 115 in an island shape.

Subsequently, as shown in FIG. 8A, a low resistance conductive material is formed on the gate insulating layer 113 and the amorphous silicon layer 114 and the ohmic contact layer 115 by sputtering or vapor deposition. (Electrode material) is deposited to form a conductive layer 116 serving as a source electrode 116a and a drain electrode 116b (see FIG. 8B), and a resist mask is formed thereon.

Subsequently, by etching away the conductive layer 116 in the opening provided in the resist mask, as shown in FIG. 8B, source / drain electrode separation patterning is performed. As a result, the source electrode 116a and the drain electrode 116b formed of the conductive layer 116 are formed.

Thereafter, as shown in FIG. 8C, the etching is continued to etch the ohmic contact layer 115.

Thereafter, as shown in Fig. 9A, the amorphous silicon layer 114 is also partially etched, and a channel etching process for adjusting the thickness of the channel portion is performed.

After the channel etching treatment, the resist mask is stripped off using a stripping solution containing an organic alkali or the like.

In addition, since the surface of the amorphous silicon layer 114 is hydrophobized after the channel etching process, a material of a conductive layer is formed on the surface of the amorphous silicon layer 114 after the resist mask is peeled off. Since the fine contaminants (corresponding to the contaminated particles M according to the first embodiment) and the like made of metal, silicon, silicon nitride, resist, and the like are easily adsorbed, after the resist mask peeling, the various types of fine The contaminants adhere to each other, causing defects and deterioration of properties. In order to remove these contaminants, conventionally, a step of performing DHF (dilute hydrofluoric acid) treatment after O ₃ water treatment has been used. However, by incorporating MNB of O ₃ in DHF, by crushing bubbles, amorphous The decontamination effect of the gap on the silicon surface is improved.

For this reason, as the cleaning process after the resist mask peeling, a cleaning liquid having ozone, which is an oxidizing gas, in a dissolved state and a microbubble state is supplied into a hydrofluoric acid solution, which is an oxide film-removable liquid, to include the surface of the amorphous silicon layer 114. By washing the entire substrate (corresponding to the substrate W according to the first embodiment), contaminants and the like present on the surface of the amorphous silicon layer 114 are removed and reattachment is prevented. For this reason, since the surface of a board | substrate is kept clean, it can contribute to the reduction of the yield fall which arises by reattachment of a contaminant, and the improvement of TFT characteristic.

Thereafter, as shown in FIG. 9B, a passivation film (protective film) 117 such as silicon nitride is formed on the entire upper surface of the glass substrate 111 by the plasma CVD method, the sputtering method, or the like.

(Fourth Embodiment)

A fourth embodiment of the present invention will be described with reference to Figs. 10A to 10C, Figs. 11A to 11C, and Fig. 12. 10-12 is sectional drawing which shows an example of the manufacturing method of a polysilicon thin film transistor in order of a manufacturing process, In the 4th Embodiment of this invention, the board | substrate cleaning by the board | substrate cleaning apparatus 1 which concerns on 1st Embodiment is shown. An application example to which the method is applied to a method for producing a polysilicon thin film transistor will be described.

As shown in FIG. 10A, the silicon nitride film 212 is formed to a thickness of 50 nm and the silicon oxide film 213 is 200 nm on the glass substrate 211 as a base insulating film on the glass substrate 211 by the plasma CVD method. do. Subsequently, an amorphous silicon film 214 is formed on the silicon oxide film 213 to a thickness of 50 nm. Subsequently, annealing is performed at a temperature of 450 ° C. in order to reduce hydrogen in the amorphous silicon film 214. The amorphous silicon film 214 is irradiated with an excimer laser to change the amorphous silicon film 214 into the polysilicon film 215.

Subsequently, a photoresist is applied on the polysilicon film 215, and a predetermined resist pattern is formed through a selective exposure and development process. Then, using the resist pattern as a mask, the polysilicon film 215 is dry-etched to leave the polysilicon film 215 only in a predetermined region, as shown in Fig. 10B. Thereafter, the resist pattern is removed.

Subsequently, a cleaning liquid having ozone, which is an oxidizing gas, in a dissolved form and a microbubble form is supplied into a hydrofluoric acid solution, which is an oxide film-removable liquid, to a substrate (substrate W according to the first embodiment) containing the polysilicon film 215. Equivalent] Clean the surface. Contaminant particles (corresponding to contaminant particles M according to the first embodiment) on the surface of the substrate and foreign matter present in the grain boundaries generated when the amorphous silicon film 214 is changed to a polysilicon film by irradiating an excimer laser [ Corresponding to the contaminated particles M according to the first embodiment], etc. are also removed at the same time, and they are also prevented from reattaching. For this reason, the cleanliness and smoothness of the surface of a board | substrate are ensured, and the function of the silicon oxide film of the next process can be utilized effectively.

Subsequently, as illustrated in FIG. 10C, a silicon oxide film 216 is formed to a thickness of 30 nm on the entire upper surface of the glass substrate 211 by the plasma CVD method. An Al-Nd (aluminum-neodymium: Nd content: 2 atm%) film is formed on the silicon oxide film 216 by a thickness of 300 nm by the sputtering method. Thereafter, using a photoresist, a predetermined resist pattern is formed on the Al-Nd film, and the Al-Nd film is dry-etched using this resist pattern as a mask to form a metal pattern 217. Thereafter, the resist pattern is removed. Then, P (phosphorus) is ion-implanted into the polysilicon film 215 on the condition that the acceleration voltage is 25 kV and the implantation amount is 7 x 10 ¹⁴ cm ^{-2 using the} metal pattern 217 as a mask, and the source of the n-type TFT is obtained. And an n-type impurity region 218 serving as a drain. Subsequently, the entire upper surface of the glass substrate 211 is irradiated with an excimer laser to electrically activate the injected P.

Subsequently, as shown in FIG. 11A, the metal pattern 217 is removed by wet etching.

Subsequently, as shown in FIG. 11B, a silicon oxide film 219 is formed on the silicon oxide film 216 to a thickness of 90 nm by the plasma CVD method. Then, an Al-Nd (aluminum-neodymium: Nd content is 2 atm%) film is formed to a thickness of 300 nm on the silicon oxide film 219 by the sputtering method. Thereafter, a predetermined resist pattern is formed on the Al-Nd film by using a photoresist, and the Al-Nd film is dry-etched using the resist pattern as a mask to form the gate electrode 220.

At this time, in the TFT formation region, a region serving as an LDD (Lightly Doped Drain) region 221 is provided between the edge portion of the gate electrode 220 and the source side impurity region 218 when viewed from above.

Subsequently, P (phosphorus) is ion-implanted into the polysilicon film 215 on the condition that the acceleration voltage is 25 kV and the implantation amount is 7 × 10 ¹⁴ cm ⁻² , using the gate electrode 220 as a mask, and the source side and the drain side The LDD region 221 is formed next to the impurity region 218. Thereafter, annealing is performed at a temperature of 400 ° C. to electrically activate P (phosphorus) injected into the LDD region 221.

Subsequently, as shown in FIG. 11C, the silicon nitride film 222 is formed to a thickness of 350 nm on the silicon oxide film 219 and the gate electrode 220 by the plasma CVD method. Thereafter, annealing is performed at a temperature of 400 ° C. to electrically activate P (phosphorus) injected into the LDD region 221, and defects in the interface between the channel region and the gate oxide film are removed by hydrogen in the silicon nitride film 222. By hydrogenation, TFT characteristics are improved.

Subsequently, a photoresist is used to form a resist film having an opening for forming a contact hole on the silicon nitride film 222. Then, the silicon nitride film 222, the silicon oxide film 219, and the silicon oxide film 216 are dry-etched using this resist film as a mask, and as shown in FIG. 12, the contact hole through the impurity region 218 of the TFT is removed. Form.

Subsequently, the sputtering method sequentially deposits Ti on the entire upper surface of the substrate 211 to a thickness of 100 nm, Al 20 nm, and Ti 50 nm, and fills contact holes with these metals to form a silicon nitride film ( A metal film is formed on the 222. Thereafter, a mask pattern is formed by photolithography, and the metal film is dry etched to form an electrode 223 electrically connected to the source and the drain of the TFT as shown in FIG.

(Other Embodiments)

In addition, the above-mentioned embodiment which concerns on this invention is an illustration, and the scope of an invention is not limited to these. The above-mentioned embodiment can be variously changed, for example, several components may be deleted from all the components shown in the above-mentioned embodiment, and the component which concerns on other embodiment may be combined suitably.

In the above-mentioned embodiment, although pressurized dissolution is used as a generation method of microbubbles, it is not limited to this, For example, the microbubble generation | generation part etc. generate | occur | produce the washing | cleaning liquid containing microbubbles, and supplies the washing | cleaning liquid to a supply nozzle ( 3) may be injected from the inside of the supply nozzle 3, or the gas is entrained in the vortex of the cleaning liquid to generate micro bubbles, and the cleaning liquid containing the micro bubbles is sprayed from the supply nozzle 3 Also good.

In addition, in the above-described embodiment, the flow rate at which the cleaning liquid is injected is controlled so that the microbubbles that reach the surface to be cleaned S of the substrate W move to the outer edge of the substrate W while suppressing the size change. Although it did, you may make it control the pressure which sprays a washing | cleaning liquid instead.

In addition, although the hydraulic nozzle is used as the supply nozzle 3 in the above-mentioned embodiment, it is not limited to this, You may make it use a high pressure nozzle, an ultrasonic nozzle, or a two-fluid nozzle. In particular, by using a high pressure nozzle or a two-fluid nozzle, by increasing the flow rate and injection pressure of the cleaning liquid sprayed from the nozzle, the substitution of the cleaning liquid becomes better, so that the cleaning efficiency can be improved.

In addition, in the above-mentioned embodiment, although the to-be-cleaned surface S of the board | substrate W may be charged by any of positive and negative potentials, the to-be-cleaned surface S of the board | substrate W is negative, for example using a charging apparatus. The battery may be charged at an electric potential. In this case, compared with the case where the to-be-cleaned surface S of the board | substrate W is a positive electric potential, only the micro bubble of a negative electric potential adheres to the contaminated particle M, and to the to-be-cleaned surface S of the board | substrate W It is possible to prevent the reattachment of the contaminated particles (M). In particular, since the microbubble to adhere on the to-be-cleaned surface S of the board | substrate W becomes unnecessary, the flow rate adjustment of a washing | cleaning liquid can be made easy by that much.

In addition, in embodiment mentioned above, although the board | substrate W is conveyed in a horizontal state, it is not limited to this, You may make it incline and convey the board | substrate W. As shown in FIG. In this case, since the flow velocity of the washing | cleaning liquid on the to-be-cleaned surface S of the board | substrate W rises compared with the board | substrate W of a horizontal state, substitution of the washing | cleaning liquid on the to-be-cleaned surface S can be promoted. In addition, the cleaning liquid is supplied toward the upper end of the substrate W in the inclined state.

In addition, in the above-described embodiment, an example of ozone (O ₃₎ as the oxidizing gas is heard, O ₂ (oxygen), and O ₃ (ozone) may be used in an oxidizing gas including at least one gas. As the liquid that can be removed from the oxide film, an oxide film removable liquid containing at least one liquid of DHF (dihydrofluoric acid), NH ₄ F (ammonium fluoride), and H ₂ O ₂ (hydrogen peroxide) can be used.

Depending on the application, for example, an insulating substrate or a single crystal Si substrate for forming a thin film transistor can be used as the substrate W. In this case, it is also possible to use the substrate W in which at least a part shows hydrophobicity by treatment of an oxide film-removable liquid, or at least a part shows hydrophilicity by treatment of an oxidizing gas. Further, the substrate W may be a material containing at least a portion of Si as a main component, and at this time, a substrate W in which at least a portion of the substrate W is amorphous or crystalline Si can be used. In this case, the Si may be amorphous or crystalline P-doped Si.

While certain embodiments have been described, these embodiments have been presented by way of example only, and are not intended to limit the scope of the inventions. These novel embodiments can be implemented in other various forms, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and its modifications are included in the scope and spirit of the invention, and are included in the invention and the equivalent scope of the claims.

Claims (18)

A conveying unit for conveying the substrate,
Supply nozzle which supplies cleaning liquid which has an oxidizing gas in a dissolved state and a micro bubble state to the to-be-cleaned surface of the said board | substrate conveyed by the said conveyance part in the liquid which can remove an oxide film.
And the supply nozzle supplies the cleaning liquid at a flow rate at which the microbubble reaching the surface to be cleaned is moved to the outer edge of the substrate while suppressing a size change. A conveying unit for conveying the substrate,
A plurality of supply nozzles respectively supplying a cleaning liquid having an oxidizing gas in a dissolved state and a microbubble state in a liquid that can be removed from an oxide film on a surface to be cleaned of the substrate conveyed by the conveying unit.
And,
The plurality of supply nozzles are arranged side by side in a direction intersecting the conveying direction of the substrate along the surface to be cleaned of the substrate, and are respectively the same direction with respect to the conveying direction of the substrate in a plane parallel to the surface to be cleaned of the substrate. Inclined in the same direction with respect to the surface to be cleaned of the substrate,
The said plurality of supply nozzles respectively supply the said cleaning liquid at the flow rate which the said micro bubble which reached on the said to-be-cleaned surface moves to the outer edge of the said board | substrate, suppressing a size change. The substrate cleaning apparatus according to claim 1, further comprising a charging device for charging the surface to be cleaned of the substrate to a negative potential equal to that of the microbubbles. The substrate cleaning apparatus according to any one of claims 1 to 3, wherein the oxidizing gas comprises at least one of O ₂ and O ₃ . The method of claim 1, wherein the oxide removable liquid is HF, NH ₄ F and H ₂ O _2. Substrate cleaning apparatus comprising at least one liquid. The substrate cleaning apparatus according to any one of claims 1 to 3, wherein the substrate is an insulating substrate or a single crystal Si substrate for forming a thin film transistor. 7. The apparatus of claim 6, wherein at least a portion of the substrate exhibits hydrophobicity by treatment of the oxide removable liquid. 7. The apparatus of claim 6, wherein at least a portion of the substrate exhibits hydrophilicity by treatment of the oxidizing gas. A substrate cleaning device comprising: a conveying unit for conveying a substrate; and a supply nozzle for supplying a cleaning liquid having an oxidizing gas in a dissolved state and a microbubble state in a liquid to which an oxide film can be removed, on the surface to be cleaned of the substrate conveyed by the conveying unit. As a substrate cleaning method for cleaning the substrate using,
The cleaning liquid is supplied to the surface to be cleaned of the substrate conveyed by the conveying unit by the supply nozzle at a flow rate at which the microbubbles that have reached the surface to be cleaned move to the outer edge of the substrate while suppressing a size change. The substrate cleaning method characterized by the above-mentioned. And a plurality of supply nozzles for supplying a cleaning unit for transporting the substrate and a cleaning liquid having an oxidizing gas in a dissolved state and a microbubble state in a liquid to which an oxide film can be removed, on the surface to be cleaned of the substrate conveyed by the transport unit. As a substrate cleaning method for cleaning the substrate using a substrate cleaning device,
The plurality of supply nozzles are disposed side by side in a direction crossing the conveying direction of the substrate along the surface to be cleaned of the substrate, and are respectively the same direction with respect to the conveying direction of the substrate in a plane parallel to the surface to be cleaned of the substrate. Inclined in the same direction with respect to the surface to be cleaned of the substrate,
The cleaning liquid at a flow rate at which the microbubbles that reach the surface to be cleaned of the substrate conveyed by the conveying unit by the plurality of supply nozzles move to the outer edge of the substrate while suppressing the size change. Substrate cleaning method characterized in that to supply. The substrate cleaning method according to claim 9, wherein the surface to be cleaned of the substrate is charged at the same negative potential as that of the micro bubbles. The method according to any one of claims 9 to 11, wherein the oxidizing gas is O ₂ and O ₃ A substrate cleaning method comprising at least one of the gases. The liquid according to any one of claims 9 to 11, wherein the oxide film removable liquid is HF, NH ₄ F and H ₂ O _2. A substrate cleaning method comprising at least one liquid. The substrate cleaning method according to any one of claims 9 to 11, wherein the substrate is an insulating substrate or a single crystal Si substrate for forming a thin film transistor. 15. The method of claim 14, wherein at least a portion of the substrate exhibits hydrophobicity by treatment of the oxide removable liquid. 15. The method of claim 14, wherein at least a portion of the substrate exhibits hydrophilicity by treatment of the oxidizing gas. An apparatus for manufacturing a display device comprising a substrate cleaning device for cleaning a substrate used for a display device.
The said substrate cleaning apparatus is a substrate cleaning apparatus in any one of Claims 1-3, The manufacturing apparatus of the display apparatus characterized by the above-mentioned. As a manufacturing method of a display apparatus which has a board | substrate washing | cleaning process which wash | cleans the board | substrate used for a display apparatus,
The said substrate cleaning process WHEREIN: The said board | substrate is wash | cleaned using the board | substrate cleaning method in any one of Claims 9-11, The manufacturing method of the display apparatus characterized by the above-mentioned.

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