TWI431676B - Substrate processing device and processing method thereof - Google Patents
Substrate processing device and processing method thereof Download PDFInfo
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- TWI431676B TWI431676B TW099127759A TW99127759A TWI431676B TW I431676 B TWI431676 B TW I431676B TW 099127759 A TW099127759 A TW 099127759A TW 99127759 A TW99127759 A TW 99127759A TW I431676 B TWI431676 B TW I431676B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
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- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
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- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Description
本發明係有關於藉由處理液對液晶顯示裝置等所用之玻璃製的基板進行處理之基板處理裝置及處理方法。The present invention relates to a substrate processing apparatus and a processing method for processing a glass substrate used for a liquid crystal display device or the like by a processing liquid.
於液晶顯示裝置所用的玻璃製之基板係形成電路圖案。對於基板形成電路圖案係採用微影製程。微影製程係如習知，於前述基板塗佈抗阻劑，並經由於該抗蝕劑形成有電路圖案之遮罩而照射光。A glass substrate used in a liquid crystal display device forms a circuit pattern. A lithography process is employed for forming a circuit pattern on a substrate. The lithography process is conventionally known in which an anti-blocking agent is applied to the substrate, and light is irradiated through a mask in which the resist is formed with a circuit pattern.
接著，反覆數次進行除去抗蝕劑中光未照射之部分或光所照射之部分，並蝕刻業已去除基板之抗蝕劑的部分等之一連串的程序，而於前述基板形成電路圖案。Next, a series of processes of removing a portion of the resist that is not irradiated with light or irradiated with light, and etching a portion of the resist from which the substrate has been removed are sequentially performed several times to form a circuit pattern on the substrate.
此種微影製程中，對於前述基板係需要藉由蝕刻液、或於蝕刻後除去抗蝕劑之剝離液、進而於除去後用以洗淨基板之洗淨液等之處理液而對基板進行處理之程序。In the lithography process, the substrate is subjected to a treatment liquid such as an etching solution or a stripping liquid for removing the resist after etching, and a cleaning liquid for cleaning the substrate after removal. Processing procedures.
以處理液對基板之表面進行處理時，係進行譬如以搬送滾輪於特定方向搬送基板，並於搬送途中自位在基板上方之噴嘴體噴射前述處理液而對基板進行處理。When the surface of the substrate is treated with the treatment liquid, the substrate is conveyed in a specific direction by the conveyance roller, and the treatment liquid is ejected from the nozzle body positioned above the substrate during transportation to process the substrate.
前述噴嘴體係相對於基板之搬送方向以及與搬送方向正交之方向而分別以預定間隔加以配置。又，一般係由前述噴嘴體以圓形圖案噴射處理液，並且，為了不於基板之表面產生無噴射處理液之部分，是讓處理液相鄰的圓形圖案重疊。The nozzle system is disposed at a predetermined interval with respect to the transport direction of the substrate and the direction orthogonal to the transport direction. Further, generally, the processing liquid is sprayed in a circular pattern by the nozzle body, and the circular pattern adjacent to the processing liquid is superposed so as not to generate a portion of the surface of the substrate without the ejection liquid.
專利文獻1係揭示以圓形的圖案噴射處理液並使之於基板上重疊，專利文獻2是揭示以四角形之圖案噴射處理液並使之於基板上重疊。Patent Document 1 discloses that a processing liquid is sprayed in a circular pattern and superposed on a substrate. Patent Document 2 discloses that a processing liquid is sprayed in a square pattern and superimposed on a substrate.
【專利文獻1】日本專利公開公報特開2002-173784號[Patent Document 1] Japanese Patent Laid-Open Publication No. 2002-173784
【專利文獻2】日本專利公開公報特開2004-275989號[Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-275989
然而，由噴嘴體噴射處理液而讓處理液之圖案於基板之板面重疊時，相較於圖案未重疊之場合，處理液的使用量增加，於成本上不甚理想。再者，於圖案重疊之部分與未重疊之部分，處理液之供給量不同，因此，亦有處理液之處理無法均一地進行之情形。However, when the processing liquid is sprayed from the nozzle body and the pattern of the processing liquid is superposed on the surface of the substrate, the amount of the processing liquid used is increased as compared with the case where the pattern is not overlapped, which is not preferable in terms of cost. Further, in the portion where the pattern overlaps and the portion where the pattern is not overlapped, the supply amount of the treatment liquid is different. Therefore, the treatment of the treatment liquid cannot be performed uniformly.
因此，進來係考慮以圖案不重疊之狀態而由噴嘴體對基板之板面噴射處理液。惟，由噴嘴體所噴射之處理液的圖案為圓形時，不讓該圖案重疊地噴射供給於基板之板面時，相鄰之圖案間會產生間隙。Therefore, it is considered that the processing liquid is ejected from the nozzle body to the board surface of the substrate in a state in which the patterns do not overlap. However, when the pattern of the treatment liquid sprayed from the nozzle body is circular, when the pattern is not sprayed and applied to the surface of the substrate, a gap is formed between the adjacent patterns.
若相鄰之圓形的圖案間產生間隙，由於該間隙，處理液易於基板上流動。處理液變得易於基板上流動時，處理液係易由基板之周邊部，特別是與基板之搬送方向交叉的寬度方向之兩端部流下。If a gap is formed between adjacent circular patterns, the processing liquid is liable to flow on the substrate due to the gap. When the treatment liquid is likely to flow on the substrate, the treatment liquid is likely to flow down from the peripheral portion of the substrate, particularly at both end portions in the width direction intersecting the conveyance direction of the substrate.
由此，因在基板的寬度方向之兩端部流動的處理液之量相較於其他部分變多，基板的寬度方向兩端部之處理變得較其他部分易於進行，而有基板之處理無法跨整個面均一地進行之情形。As a result, the amount of the processing liquid flowing in the both end portions in the width direction of the substrate is larger than that of the other portions, and the processing of the both end portions in the width direction of the substrate is easier than that of the other portions, and the processing of the substrate cannot be performed. A situation that is uniform across the entire surface.
又，基板之板面藉由前置程序之處理等而成為疏水面時，處理液係進一步更易由基板之寬度方向的兩側部流下，故，此種疏水面之基板的場合，更易於處理中產生污斑之情形。Further, when the surface of the substrate becomes a hydrophobic surface by the processing of the pre-program or the like, the processing liquid is further more likely to flow down from both sides in the width direction of the substrate, so that the substrate of the hydrophobic surface is easier to handle. The situation in which stains are produced.
另一方面，若由噴嘴體所噴射之處理液的圖案為四角形，於基板的板面係可以不於圖案間產生間隙之狀態而均一地噴射供給處理液。惟，以四角形之圖案無間隙且均一地將處理液供給於基板之整個板面時，會有在基板上形成各圖案之處理液的流動性降低情形。On the other hand, when the pattern of the processing liquid sprayed by the nozzle body has a square shape, the processing liquid can be uniformly sprayed on the surface of the substrate without causing a gap between the patterns. However, when the treatment liquid is supplied to the entire surface of the substrate without a gap and the gap is uniformly formed, the fluidity of the treatment liquid for forming each pattern on the substrate may be lowered.
若在基板的板面上之處理液的流動性降低，在基板之上方面會於處理液產生積淤物，無法順利進行置換為新的處理液。由此，藉由處理液進行之基板的處理變得無法均一地進行，而有處理速度降低等情形。When the fluidity of the treatment liquid on the surface of the substrate is lowered, deposits are generated in the treatment liquid on the substrate, and it is not possible to smoothly replace it with a new treatment liquid. As a result, the processing of the substrate by the processing liquid cannot be performed uniformly, and the processing speed is lowered.
本發明提供一種基板處理裝置及處理方法，係可讓處理液不易由基板之寬度方向的兩端部流下，且於基板的寬度方向兩端部之間的部分可確保處理液之流動性，藉此，可遍及整個板面而無污斑且均一地進行基板之處理。The present invention provides a substrate processing apparatus and a processing method, which are capable of preventing the processing liquid from flowing down from both end portions in the width direction of the substrate, and ensuring fluidity of the processing liquid in a portion between both end portions in the width direction of the substrate. Thus, the processing of the substrate can be performed uniformly throughout the entire surface without stains.
本發明係一種基板處理裝置，特徵在於其係將處理液供給至基板之板面並對該板面進行處理者，且包含有：搬送機構，係於預定方向搬送前述基板；第1噴嘴體，係於與前述基板之搬送方向交叉之寬度方向的兩端部，以不產生間隙之緊密的狀態，均一地噴射供給前述處理液；及第2噴嘴體，係於前述基板中藉由前述第1噴嘴體而供給有處理液之寬度方向兩端部除外的部分，以相對於前述基板之搬送方向以及與搬送方向交叉之方向產生間隙之疏鬆的狀態，噴射供給前述處理液。The present invention relates to a substrate processing apparatus characterized in that a processing liquid is supplied to a board surface of a substrate and processed on the board surface, and includes a transport mechanism that transports the substrate in a predetermined direction, and a first nozzle body. The processing liquid is uniformly sprayed and supplied to both end portions in the width direction intersecting with the transport direction of the substrate so as not to form a gap; and the second nozzle body is formed by the first The nozzle body is supplied with a portion excluding the both end portions in the width direction of the processing liquid, and the processing liquid is ejected and supplied in a loose state in which a gap is formed in a direction in which the substrate is conveyed and a direction intersecting the conveying direction.
本發明係一種基板處理方法，特徵在於其係將處理液供給至基板之板面並對該板面進行處理者，且包含有以下程序，即：於預定方向搬送前述基板之程序；於與前述基板之搬送方向交叉之寬度方向的兩端部，以不產生間隙之緊密的狀態，均一地噴射供給前述處理液之程序；及於前述基板之寬度方向兩端部除外的部分，以相對於前述基板之搬送方向以及與搬送方向交叉之方向產生間隙之疏鬆的狀態，噴射供給前述處理液噴之程序。The present invention relates to a substrate processing method characterized in that it supplies a processing liquid to a board surface of a substrate and processes the board surface, and includes a program for transporting the substrate in a predetermined direction; a program for uniformly ejecting the processing liquid in a state in which the gaps are not tightly formed at both end portions in the width direction in which the transfer directions of the substrates intersect, and a portion excluding the both ends in the width direction of the substrate with respect to the foregoing In the state in which the substrate is conveyed and the direction intersecting the transport direction is loose, a process of jetting the supply of the processing liquid is performed.
依本發明，於基板之寬度方向的兩端部，以不產生間隙之緊密的狀態而均一地噴射供給處理液，於寬度方向兩端部除外之部分，係相對於基板之搬送方向以及與搬送方向交叉之方向以不產生間隙之疏鬆的狀態而噴射供給處理液。According to the present invention, the processing liquid is uniformly sprayed at the both end portions in the width direction of the substrate in a state in which the gap is not formed, and the portions excluding the both ends in the width direction are transported and transported with respect to the substrate. The direction in which the directions intersect is injected into the treatment liquid in a loose state in which no gap is generated.
故，於基板之寬度方向的兩端部，由於處理液之流動性降低，因此即使基板之板面為疏水性，處理液仍難由該板面之寬度方向兩端部流下，而於寬度方向兩端部除外之部分，所噴射供給之處理液處於具有流動性之狀態，因此處理液可流遍板面整體而進行均一地處理。亦即，可不增加處理液由基板之寬度方向兩端部流落之量便均一地對整個面進行處理。Therefore, since the fluidity of the treatment liquid is lowered at both end portions in the width direction of the substrate, even if the surface of the substrate is hydrophobic, the treatment liquid is hard to flow from both end portions in the width direction of the plate surface, and is in the width direction. In the portion excluding the both end portions, the processing liquid to be supplied and supplied is in a fluid state, so that the processing liquid can be uniformly processed over the entire surface of the board. That is, the entire surface can be uniformly treated without increasing the amount of the treatment liquid flowing from both end portions in the width direction of the substrate.
第1圖係顯示沿本發明第1實施形態之處理槽的長向方向之概略的構成之剖面圖。Fig. 1 is a cross-sectional view showing a schematic configuration of a longitudinal direction of a treatment tank according to a first embodiment of the present invention.
第2圖係沿處理槽之寬度方向的放大剖面圖。Fig. 2 is an enlarged cross-sectional view along the width direction of the treatment tank.
第3圖係沿處理槽之寬度方向一端部的放大圖。Fig. 3 is an enlarged view of one end portion in the width direction of the treatment tank.
第4A圖係第1噴嘴體之噴嘴尖口的立體圖。Fig. 4A is a perspective view of the nozzle tip of the first nozzle body.
第4B圖係第2噴嘴體之噴嘴尖口的立體圖。Fig. 4B is a perspective view of the nozzle tip of the second nozzle body.
第5圖係顯示自第1、第2噴嘴體於基板之寬度方向噴射處理液之狀態的立體圖。Fig. 5 is a perspective view showing a state in which the processing liquid is ejected from the first and second nozzle bodies in the width direction of the substrate.
第6圖係顯示自第1、第2噴嘴體噴射至基板之處理液之圖案的平面圖。Fig. 6 is a plan view showing a pattern of a treatment liquid ejected from the first and second nozzle bodies to the substrate.
第7圖係顯示處理液由第1、第2噴嘴體以與第6圖所示之圖案不同的圖案噴射於基板之狀態的平面圖。Fig. 7 is a plan view showing a state in which the processing liquid is ejected onto the substrate by the first and second nozzle bodies in a pattern different from the pattern shown in Fig. 6.
第8圖係比較以第7圖所示之四角形圖案以及圓形圖案噴射蝕刻液之場合，與僅交錯狀噴射圓形圖案之場合的蝕刻量。Fig. 8 is a view showing an etching amount in the case where the etching liquid is ejected in the square pattern and the circular pattern shown in Fig. 7 and in the case where the circular pattern is ejected only in a staggered manner.
第9圖係顯示由表示本發明之第2實施形態之第1、第2噴嘴體於基板之寬度方向噴射處理液之狀態的立體圖。Fig. 9 is a perspective view showing a state in which the first and second nozzle bodies of the second embodiment of the present invention are sprayed with the treatment liquid in the width direction of the substrate.
第10圖係顯示由第1、第2噴嘴體噴射至基板之處理液之圖案的平面圖。Fig. 10 is a plan view showing a pattern of a treatment liquid sprayed onto a substrate by the first and second nozzle bodies.
第11圖係顯示本發明第3實施形態之傾斜搬送的基板之圖。Fig. 11 is a view showing a substrate which is obliquely conveyed according to a third embodiment of the present invention.
第12圖係顯示由第1、第2噴嘴體噴射至第11圖所示之基板之處理液的圖案之平面圖。Fig. 12 is a plan view showing a pattern of a treatment liquid sprayed from the first and second nozzle bodies to the substrate shown in Fig. 11.
以下，邊參照圖式邊說明本發明之實施形態。Hereinafter, embodiments of the present invention will be described with reference to the drawings.
第1圖乃至第8圖係顯示本發明之第1實施形態。第1圖所示之本發明之處理裝置係包含有腔室1。該腔室1係於長向方向一端形成搬入口2，於另一端形成搬出口3，且於內部，複數條搬送軸4係相對於長向方向以預定間隔且可旋轉地加以設置。於搬送軸4，複數個搬送滾輪5係於軸方向以預定間隔加以設置。Fig. 1 through Fig. 8 show a first embodiment of the present invention. The processing apparatus of the present invention shown in Fig. 1 includes a chamber 1. The chamber 1 is formed with a carry-in port 2 at one end in the longitudinal direction, and a transfer port 3 is formed at the other end, and a plurality of transport shafts 4 are rotatably provided at predetermined intervals with respect to the longitudinal direction. In the transport shaft 4, a plurality of transport rollers 5 are provided at predetermined intervals in the axial direction.
如第2圖及第3圖所示，各搬送軸4係兩端部藉由軸承6而可旋轉地加以支撐。於複數條搬送軸之1條之一端部，係嵌裝有蝸輪7。設置於該搬送軸4之蝸輪7係嚙合於蝸形齒輪8。蝸形齒輪8係嵌裝於沿腔室1之長向方向配置的從動軸9。As shown in FIGS. 2 and 3, each of the transport shafts 4 is rotatably supported by bearings 6 at both ends. One end of one of the plurality of transport shafts is fitted with a worm wheel 7. The worm wheel 7 provided on the conveying shaft 4 is meshed with the snail gear 8. The worm gear 8 is fitted to the driven shaft 9 disposed along the longitudinal direction of the chamber 1.
於前述從動軸9設有從動帶輪11，該從動帶輪11與安裝於驅動源12之旋轉軸12a的驅動帶輪13係拉伸設置有鏈帶14。藉此，前述驅動帶輪13以驅動源12旋轉驅動時，因應該旋轉，設有前述蝸輪7之搬送軸4係經由從動軸9而旋轉驅動。The driven shaft 9 is provided with a driven pulley 11, and the driven pulley 11 is stretched and provided with a chain belt 14 to a drive pulley 13 attached to a rotating shaft 12a of the drive source 12. Thereby, when the drive pulley 13 is rotationally driven by the drive source 12, the transfer shaft 4 provided with the worm wheel 7 is rotationally driven via the driven shaft 9 in response to rotation.
於各搬送軸4之一端部，係設有未圖示之鏈輪。於各鏈輪拉伸設置有未圖示之鏈帶。藉此，設有蝸輪7之搬送軸4旋轉驅動時，其他的搬送軸4會跟著該旋轉一起連動。A sprocket (not shown) is provided at one end of each of the transport shafts 4. A chain belt (not shown) is provided for stretching each sprocket. Accordingly, when the transport shaft 4 provided with the worm wheel 7 is rotationally driven, the other transport shafts 4 are interlocked together with the rotation.
又，前述驅動源12係藉由未圖示之控制裝置而控制驅動，可讓前述驅動帶輪13之旋轉方向為正轉方向、逆轉方向以及正轉方向與逆轉方向交互旋轉。Further, the drive source 12 is controlled to be driven by a control device (not shown), and the rotation direction of the drive pulley 13 can be rotated in the forward rotation direction, the reverse rotation direction, and the forward rotation direction and the reverse rotation direction.
由前述腔室1之搬入口2搬入液晶顯示裝置所使用之玻璃製之矩形狀的基板W。搬入腔室1內之基板W係下方面與設置在搬送軸4之搬送滾輪5接觸而加以搬送。A rectangular substrate W made of glass used in the liquid crystal display device is carried into the inlet 2 of the chamber 1. The substrate W carried into the chamber 1 is brought into contact with the transport roller 5 provided on the transport shaft 4 and transported.
於前述搬送軸4之上方，配置有兩端部係藉由軸承17而可旋轉地加以支撐之觸壓軸18。於該觸壓軸18之兩端部設有觸壓滾輪19，該觸壓滾輪19係觸壓藉由前述搬送軸4之搬送滾輪5而加以搬送之前述基板W之寬度方向之兩端緣的上方面者。即，基板W係寬度方向兩端緣的下方面與上方面藉由前述搬送滾輪5及觸壓滾輪19而加以保持並搬送。Above the transport shaft 4, a contact shaft 18 whose both ends are rotatably supported by a bearing 17 is disposed. A contact roller 19 is provided at both end portions of the contact shaft 18, and the contact roller 19 is pressed against the both end edges of the substrate W in the width direction of the transfer roller 5 by the transport roller 5 Aspects. In other words, the lower side of the both ends of the substrate W in the width direction and the upper side are held by the transport roller 5 and the touch roller 19 and transported.
於藉由前述腔室1內之搬送滾輪5而搬送之基板W的上方，如第1圖所示，沿著基板W的搬送方向，杆狀的複數個安裝構件22係以間距P1 的間隔加以配置。With the transfer to the chamber 1 while the upper roller conveyor 5 of the substrate W, as shown in FIG. 1, the transport direction of the substrate W, pitch P 22 is based intervals of a plurality of rod-like mounting member 1 Configure it.
如第2圖所示，各安裝構件22之兩端部，即，於與前述基板W之搬送方向交叉的寬度方向之兩端部的上方相對向之部分，安裝有第1噴嘴體23，且於中段部設有複數個第2噴嘴體24。該等噴嘴體23,24係相對於前述安裝構件22之長向方向而等間隔，於此實施形態係以間距P2 之間隔而加以安裝。此處，係設定成P1 =P2 。As shown in Fig. 2, the first nozzle body 23 is attached to both end portions of the mounting members 22, that is, at positions opposite to the upper end portions in the width direction intersecting the conveying direction of the substrate W, and A plurality of second nozzle bodies 24 are provided in the middle portion. Such a nozzle system 23, 24 with respect to the mounting member 22 in the direction of the long intervals, this embodiment of the system 2 of the pitch P and spacing to be installed. Here, it is set to P 1 =P 2 .
又，於基板W之搬送方向，設置於相鄰之安裝構件22之第1、第2噴嘴體23,24，係相對於與基板W之搬送方向交叉之寬度方向而設置在相同的位置。Further, in the transport direction of the substrate W, the first and second nozzle bodies 23 and 24 provided in the adjacent mounting members 22 are provided at the same position with respect to the width direction intersecting the transport direction of the substrate W.
如第3圖與第4A圖、第4B圖所示，第1、第2噴嘴體23,24具有噴嘴尖口23a,24a。於第1噴嘴體23之噴嘴尖口23a，如第4A圖所示，於前述噴嘴尖口23a之下方面係形成有四角形，本實施形態為開口成正方形之角錐狀的噴射孔23b。於噴射孔23b之頂部，連通有圓柱狀之供給孔23c，處理液係由此供給孔23c而供給至噴射孔23b。As shown in Fig. 3, Fig. 4A, and Fig. 4B, the first and second nozzle bodies 23, 24 have nozzle tips 23a, 24a. As shown in FIG. 4A, the nozzle tip 23a of the first nozzle body 23 has a quadrangular shape formed below the nozzle tip 23a. In the present embodiment, the nozzle hole 23b is formed in a square pyramid shape. A cylindrical supply hole 23c is communicated with the top of the injection hole 23b, and the processing liquid is supplied to the injection hole 23b by the supply hole 23c.
於前述第2噴嘴體24之噴嘴尖口24a，如第4B圖所示，於前述噴嘴尖口24a之下方面，係形成有開口為圓形之圓錐狀的噴射孔24b。於噴射孔24b之頂部，連通有圓柱狀之供給孔24c，處理液係由此供給孔24c而供給至噴射孔24b。As shown in FIG. 4B, the nozzle tip 24a of the second nozzle body 24 is formed with a conical injection hole 24b having a circular opening in the lower surface of the nozzle tip 24a. A cylindrical supply hole 24c is communicated with the top of the injection hole 24b, and the processing liquid is supplied to the injection hole 24b by the supply hole 24c.
供給於各噴嘴體23,24之處理液，係成為與各噴嘴尖口23a,24a之噴射孔23b,24b之形狀對應的形狀，即，作為第1圖案之正方形的四角形圖案S1與作為第2圖案之圓形圖案S2，並噴射於基板W之上方面。The processing liquid supplied to each of the nozzle bodies 23 and 24 has a shape corresponding to the shape of the injection holes 23b and 24b of the nozzle tips 23a and 24a, that is, the square quadrangular pattern S1 as the first pattern and the second The circular pattern S2 of the pattern is sprayed on the substrate W.
藉由後述之高度調整機構25來設定設有前述第1、第2噴嘴體23,24之安裝構件22的高度，如第6圖所示，於與前述基板W之上方面的搬送方向交叉之寬度方向的兩端部，由一對第1噴嘴體23以正方形的四角形圖案S1而噴射供給處理液，且於一對四角形圖案S1之間，處理液是由複數個第2噴嘴體24以鄰接之圓形圖案S2而加以噴射供給。此時，四角形圖案S1一邊之長度係與圓形圖案S2的直徑為相同尺寸。The height of the attachment member 22 in which the first and second nozzle bodies 23 and 24 are provided is set by the height adjustment mechanism 25 to be described later, and as shown in FIG. 6, the conveyance direction is superimposed on the upper surface of the substrate W. In the both end portions in the width direction, the processing liquid is ejected by the pair of first nozzle bodies 23 in a square quadrangular pattern S1, and the processing liquid is abutted by the plurality of second nozzle bodies 24 between the pair of square patterns S1. The circular pattern S2 is supplied by injection. At this time, the length of one side of the square pattern S1 is the same as the diameter of the circular pattern S2.
另一方面，由設置在相對於基板W之搬送方向而相鄰之安裝構件22之第1噴嘴體23的噴射孔23b所噴射之處理液的四角形圖案S1，係以相對於前述基板W之搬送方向無間隙的鄰接狀態，即緊密的狀態加以噴射。On the other hand, the square pattern S1 of the processing liquid sprayed by the injection holes 23b of the first nozzle body 23 of the mounting member 22 adjacent to the transport direction of the substrate W is transported with respect to the substrate W. The abutting state with no gap in the direction, that is, the tight state is injected.
由設置於相鄰之安裝構件22的前述第2噴嘴體24之噴射孔24b所噴射之處理液的圓形圖案S2，係於噴射有前述四角形圖案S1之基板W的寬度方向之兩端部間，行列狀鄰接而噴射供給。The circular pattern S2 of the treatment liquid sprayed from the injection holes 24b of the second nozzle body 24 provided in the adjacent attachment member 22 is between the both ends in the width direction of the substrate W on which the square pattern S1 is sprayed. The wales are adjacent to each other and are supplied by injection.
四角形圖案S1之處理液以於基板W之寬度方向兩端部，沿基板之搬送方向而鄰接之無間隙的緊密狀態加以噴射供給時，於基板W的寬度方向兩端部，處理液之流動性降低。藉此，基板W之板面即使為疏水面，供給於基板W之寬度方向兩端部之處理液係變得不易由端部往外側流落。When the processing liquid of the square pattern S1 is sprayed and supplied at the both ends in the width direction of the substrate W in the direction in which the substrate is conveyed in the gap-free state, the fluidity of the processing liquid is applied to both ends in the width direction of the substrate W. reduce. As a result, even if the plate surface of the substrate W is a water-repellent surface, the processing liquid supplied to both end portions in the width direction of the substrate W is less likely to flow outward from the end portion.
於基板W之寬度方向兩端部的四角形圖案S1間，圓形圖案S2之處理液係以相對於基板W之寬度方向以及搬送方向而鄰接之狀態，行列狀地噴射供給。圓形圖案S2即使相對於基板W之寬度方向及搬送方向而鄰接，相鄰之圓形圖案S2間仍產生於第6圖以C表示之間隙。即，於基板W，圓形圖案S2係以具間隙C之疏鬆的狀態而噴射供給。Between the square-shaped patterns S1 at both end portions in the width direction of the substrate W, the processing liquid of the circular pattern S2 is ejected and supplied in a row in a state of being adjacent to the width direction of the substrate W and the conveyance direction. The circular pattern S2 is adjacent to the width direction and the transport direction of the substrate W, and the adjacent circular pattern S2 is generated in the gap indicated by C in FIG. In other words, in the substrate W, the circular pattern S2 is ejected and supplied in a state in which the gap C is loose.
圓形圖案S2間具有間隙C時，於形成圓形圖案S2之處理液係產生朝前述間隙C之流動。亦即，供給於基板W之寬度方向兩端部的四角形圖案S1之間之圓形圖案S2的處理液，係因形成前述間隙C而具有流動性。藉此，供給於基板W之 寬度方向兩端部的四角形圖案S1之間之圓形圖案S2的處理液，係邊流動而埋覆前述間隙C邊混入相互之圖案S2而均一地分佈。When there is a gap C between the circular patterns S2, the processing liquid which forms the circular pattern S2 generates a flow toward the gap C. In other words, the treatment liquid supplied to the circular pattern S2 between the rectangular patterns S1 at both end portions in the width direction of the substrate W has fluidity due to the formation of the gap C described above. Thereby, supplied to the substrate W The processing liquid of the circular pattern S2 between the square-shaped patterns S1 at both end portions in the width direction flows while being buried, and the gap C is buried while being mixed with the mutual pattern S2 to be uniformly distributed.
前述噴嘴體23,24係藉由設於前述安裝構件22之兩端部的前述高度調整機構25而可進行相對於基板W之板面的高度調整。該高度調整機構25係包含如第3圖所示之安裝桿27。該安裝桿27之一端係經由連結片26而安裝於前述安裝構件22之兩端。安裝桿27係讓軸線與前述安裝構件22之軸線平行地加以設置。The nozzle bodies 23 and 24 can be adjusted in height with respect to the plate surface of the substrate W by the height adjusting mechanism 25 provided at both end portions of the mounting member 22. The height adjustment mechanism 25 includes a mounting rod 27 as shown in Fig. 3. One end of the mounting rod 27 is attached to both ends of the mounting member 22 via a connecting piece 26. The mounting rod 27 is disposed such that the axis is parallel to the axis of the aforementioned mounting member 22.
於前述腔室1內之寬度方向兩端，導引構件28係經由L字狀的托架29而直立設置。該托架29之下端係固定於前述腔室1之側壁下部。於前述導引構件28，細長之導引孔31係沿上下方向於前述導引構件28之厚度方向貫通而形成。The guide member 28 is erected via the L-shaped bracket 29 at both ends in the width direction of the chamber 1. The lower end of the bracket 29 is fixed to the lower portion of the side wall of the aforementioned chamber 1. In the guide member 28, the elongated guide hole 31 is formed to penetrate in the thickness direction of the guide member 28 in the vertical direction.
於前述導引孔31，由導引構件28之厚度方向一端，前述安裝桿27之另一端部係沿導引孔31之長向方向而可滑動地插入。由前述導引構件28之厚度方向另一端，蝶形螺帽32係經由墊片33而螺合於前述安裝桿27之端面。In the guide hole 31, the other end portion of the attachment rod 27 is slidably inserted in the longitudinal direction of the guide hole 31 from one end in the thickness direction of the guide member 28. The butterfly nut 32 is screwed to the end surface of the mounting rod 27 via the spacer 33 from the other end of the guide member 28 in the thickness direction.
因此，鬆緩前述蝶形螺帽32時，可讓前述安裝構件22沿導引構件28之導引孔31而於上下方向滑動，鎖緊前述蝶形螺帽32時，可讓前述安裝置構件22在預定的位置加以固定。Therefore, when the butterfly nut 32 is loosened, the mounting member 22 can be slid in the up and down direction along the guiding hole 31 of the guiding member 28, and when the butterfly nut 32 is locked, the device member can be made 22 is fixed at a predetermined position.
於前述安裝桿27，螺合有調整螺釘34。該調整螺釘34係上端部可旋轉地插通設於導引構件28上端之支撐構件35，下端則可旋轉地支撐於安裝有前述導引構件28之托架29的上方面。An adjustment screw 34 is screwed to the mounting rod 27 described above. The adjusting screw 34 is rotatably inserted into the support member 35 provided at the upper end of the guiding member 28, and the lower end is rotatably supported by the upper side of the bracket 29 on which the guiding member 28 is attached.
於前述調整螺釘34，螺合有位在前述支撐構件35之上面側與下面側之螺帽36。鬆緩一對螺帽36之任一者與螺合於前述安裝桿27之蝶形螺帽32，且讓前述調整螺釘34旋轉時，係可經由前述安裝桿27而讓前述安裝構件22之高度於上方或下方進行微調整。即，安裝於前述安裝構件22之噴嘴體23,24，係可藉由前述高度調整機構25而調整相對於前述基板W之板面的高度。The adjusting screw 34 is screwed with a nut 36 positioned on the upper side and the lower side of the support member 35. When one of the pair of nuts 36 is loosened and the butterfly nut 32 of the mounting rod 27 is screwed, and the adjusting screw 34 is rotated, the height of the mounting member 22 can be made via the mounting rod 27 Make fine adjustments above or below. That is, the nozzle bodies 23 and 24 attached to the mounting member 22 can be adjusted in height with respect to the plate surface of the substrate W by the height adjusting mechanism 25.
藉由改變噴嘴體23,24之高度，可變更由各噴嘴體23,24噴射且到達基板W之上方面的處理液之四角形圖案S1及圓形圖案S2的面積。藉此，於基板W之寬度方向以及與該寬度方向交叉之搬送方向，係可如第6圖所示般，將前述第1、第2圖案S1、S2噴射供給至基板W之上方面。By changing the heights of the nozzle bodies 23, 24, the area of the square pattern S1 and the circular pattern S2 of the processing liquid which are ejected from the respective nozzle bodies 23, 24 and reach the upper side of the substrate W can be changed. Thereby, the first and second patterns S1 and S2 can be ejected and supplied onto the substrate W as shown in FIG. 6 in the width direction of the substrate W and the transport direction intersecting the width direction.
又，如第6圖所示，由設置於基板W之搬送方向以預定間隔加以配置之複數個安裝構件22上的前述第1、第2噴嘴體23,24所噴射之處理液相對於基板W之搬送方向的噴射區域R，係較沿基板W之搬送方向的長度尺寸大地加以設定。Further, as shown in Fig. 6, the processing liquid phase ejected by the first and second nozzle bodies 23, 24 on the plurality of mounting members 22 disposed at predetermined intervals in the transport direction of the substrate W is for the substrate W. The ejection region R in the transport direction is set to be larger than the length dimension in the transport direction of the substrate W.
接著，說明藉由前述構成之處理裝置對基板W進行處理之順序。首先，使驅動源12作動，將基板W由腔室1之搬入口2搬入內部，由設置於腔室1內之第1、第2噴嘴體23,24將處理液向基板W之板面噴射。Next, the procedure of processing the substrate W by the processing device having the above configuration will be described. First, the drive source 12 is actuated, the substrate W is carried into the inside of the inlet 1 of the chamber 1, and the processing liquid is sprayed onto the surface of the substrate W by the first and second nozzle bodies 23 and 24 provided in the chamber 1. .
於與基板W之板面的搬送方向交叉之寬度方向的兩端部，如第6圖所示，由第1噴嘴體23所噴射之處理液係藉由相對於基板W之搬送方向而鄰接之四角形圖案S1而以緊密之狀態加以供給，於基板W之寬度方向的兩端部間，即，於四角形圖案S1之間的部分，藉由行列狀鄰接且於相鄰之圖案間產生間隙C之疏鬆的狀態之圓形圖案S2而噴射供給處理液。As shown in FIG. 6 , the processing liquid sprayed by the first nozzle body 23 is adjacent to the transport direction of the substrate W as shown in FIG. 6 at the both end portions in the width direction intersecting the transport direction of the board surface of the substrate W. The square pattern S1 is supplied in a tight state, and a portion between the both end portions in the width direction of the substrate W, that is, between the square pattern S1, is adjacent to each other in the matrix shape and a gap C is formed between the adjacent patterns. The processing liquid is supplied by the circular pattern S2 in a loose state.
於基板W之寬度方向的兩端部，處理液藉由四角形圖案S1而相對於基板之搬送方向以無間隙的緊密狀態加以供給時，處理液不僅是於基板之搬送方向，對於基板W之寬度方向，流動性亦受到限制。藉此，供給於基板W之寬度方向兩端部的處理液，不易由寬度方向的端部往外側流下。When the processing liquid is supplied in a tightly spaced state with respect to the transport direction of the substrate by the square pattern S1 at both end portions in the width direction of the substrate W, the processing liquid is not only the transport direction of the substrate but also the width of the substrate W. Direction and mobility are also limited. As a result, the processing liquid supplied to both end portions in the width direction of the substrate W is less likely to flow outward from the end portion in the width direction.
於基板W之寬度方向兩端部以緊密的狀態而供給之四角形圖案S1之間，以具間隙C之疏鬆的狀態行列狀噴射供給之圓形圖案S2之處理液係流動而讓形成各圓形圖案S2之處理液埋覆前述間隙C。Between the rectangular patterns S1 which are supplied in a tight state at both end portions in the width direction of the substrate W, the processing liquid in which the circular pattern S2 is sprayed and supplied in a loose state with a gap C flows to form a circular shape. The treatment liquid of the pattern S2 buryes the aforementioned gap C.
藉此，於基板W之寬度方向兩端部之間的部分，處理液係朝前述間隙C流動，分佈狀態變得均一，且因該流動而不易產生基板W上之積淤，因此處理液之處理可無污斑且均一地進行。Thereby, in the portion between the both end portions in the width direction of the substrate W, the treatment liquid flows toward the gap C, the distribution state becomes uniform, and the deposition on the substrate W is less likely to occur due to the flow, so the treatment liquid The treatment can be carried out without stains and uniformly.
即，處理液不易由基板W之寬度方向的兩端部流落，並且於其他部分，處理液係加以流動且均一地分佈，因此，由該結果，基板W的整個板面可均一地進行處理。In other words, the treatment liquid is less likely to flow from both end portions in the width direction of the substrate W, and the treatment liquid flows and is uniformly distributed in other portions. Therefore, the entire surface of the substrate W can be uniformly treated as a result.
通常，由前述腔室1之搬入口2搬入至內部的基板W，係朝搬出口3以預定的速度加以搬送。且基板W通過前述腔室1之期間，係由第1、第2噴嘴體23,24而藉由如前述地供給之處理液進行處理。Usually, the substrate W carried into the inside by the inlet 2 of the chamber 1 is conveyed toward the delivery port 3 at a predetermined speed. While the substrate W passes through the chamber 1, the first and second nozzle bodies 23 and 24 are processed by the processing liquid supplied as described above.
另一方面，欲對基板W確實進行蝕刻及洗淨等的處理時，亦可讓處理液在不由第1、第2噴嘴體23,24所噴射之區域R(第6圖所示)脫離基板W之範圍進行往返動作。On the other hand, when the substrate W is subjected to a process such as etching or cleaning, the processing liquid can be detached from the substrate in the region R (shown in FIG. 6) which is not ejected by the first and second nozzle bodies 23 and 24. The range of W performs a round trip.
前述第1實施形態中，前述基板W之板面的處理液於以四角形圖案S1所噴射供給的兩端部之間的部分，係以圓形圖案S2行列狀噴射供給處理液，但亦可如第7圖所示，交錯狀地噴射供給前述圓形圖案S2。In the first embodiment, the processing liquid on the surface of the substrate W is sprayed and supplied to the processing liquid in a row in a circular pattern S2 at a portion between the both end portions which are ejected in the square pattern S1. As shown in Fig. 7, the circular pattern S2 is ejected in a staggered manner.
以交錯狀噴射供給圓形圖案S2之處理液時，圓形圖案S2之數量係每一列各減少一個。藉此，相較於以行列狀噴射供給圓形圖案S2時，於數量較少之列，位在兩端的圓形圖案S2與噴射供給至寬度方向兩端部之矩形圖案S1之間產生的間隙C2係較其他部分的間隙C1大，因此，可藉由前述間隙C2而讓流動性較少的寬度方向兩端部之處理液的流動性增大。When the treatment liquid supplied to the circular pattern S2 is sprayed in a staggered manner, the number of the circular patterns S2 is reduced by one for each column. Thereby, the gap between the circular pattern S2 located at both ends and the rectangular pattern S1 which is supplied to both end portions in the width direction is generated in a smaller number of rows than when the circular pattern S2 is supplied in a matrix. Since the C2 is larger than the gap C1 of the other portions, the fluidity of the treatment liquid at both end portions in the width direction having less fluidity can be increased by the gap C2.
又，讓圓形圖案S2為交錯狀時，相對於基板W之搬送方向，圓形圖案S2之間距變小，因此相鄰之矩形圖案S1變重疊。Moreover, when the circular pattern S2 is staggered, the distance between the circular patterns S2 becomes smaller with respect to the conveyance direction of the substrate W, and the adjacent rectangular patterns S1 overlap.
第8圖係顯示於複數個點測量下述二個場合之蝕刻量的實驗結果，即，使用蝕刻液作為處理液，且如第7圖所示，藉由四角形圖案S1與配置成交錯狀之圓形圖案S2而將蝕刻液噴射供給至基板W之場合，以及僅讓圓形圖案S2交錯狀地加以噴射供給之場合。於第8圖，A所示之折線係前者之場合，B所示之折線為後者之場合。又，折線A與折線B中之測量點係測量於各處理所使用之各個基板W之相同位置(場所)。Fig. 8 is a view showing an experimental result of measuring the etching amount in the following two points at a plurality of points, that is, using an etching liquid as a processing liquid, and as shown in Fig. 7, by a quadrangular pattern S1 and arranged in a staggered shape When the etching liquid is sprayed and supplied to the substrate W in the circular pattern S2, and only the circular pattern S2 is jetted and supplied in a staggered manner. In the case of Fig. 8, where the fold line shown in A is the former, the fold line shown by B is the latter. Further, the measurement points in the broken line A and the broken line B are measured at the same position (place) of each of the substrates W used in each process.
若比較折線A與折線B，於基板W之寬度方向兩端部以四角形圖案S1供給處理液，並於其之間的部分讓圓形圖案S2為交錯狀供給之曲線A，係較於整個面以圓形圖案S2而交錯狀供給之場合，蝕刻量之偏差較少，即，確認可均一地進行蝕刻。When the folding line A and the folding line B are compared, the processing liquid is supplied in a square pattern S1 at both end portions in the width direction of the substrate W, and the circular pattern S2 is supplied in a staggered pattern A between the portions thereof, which is compared with the entire surface. When the circular pattern S2 is supplied in a staggered manner, the variation in the amount of etching is small, that is, it is confirmed that the etching can be performed uniformly.
第9圖及第10圖係顯示本發明之第2實施形態。此第2實施形態中，如第9圖所示，於讓長向方向沿著與基板W之搬送方向交叉之寬度方向且配置於基板之上方的安裝構件22，在相對於前述基板W之兩端部的部分，分別以間距P2 之間隔而設置兩個第1噴嘴體23，且於第1噴嘴體23之間的部分，同樣地以間距P2 之間隔設置複數個第2噴嘴體。Fig. 9 and Fig. 10 show a second embodiment of the present invention. In the second embodiment, as shown in FIG. 9, the mounting member 22 disposed on the substrate in the width direction intersecting the transport direction of the substrate W in the longitudinal direction is opposite to the substrate W. part of the end portion, at a pitch P 2 of the spacer are provided two first nozzle member 23, and a portion between the first nozzle member 23 in the same manner as the pitch intervals P 2 is provided a plurality of second nozzle body.
詳細情形並未圖示，於基板W之搬送方向，如前述，設有第1噴嘴體23及第2噴嘴體24之複數個安裝構件22，係以間距P1 之間隔加以設置。Detailed case not shown, in the conveying direction of the substrate W, as described above, the nozzle body 23 is provided with first and second plurality of mounting the nozzle body 24 of the member 22, the line pitch intervals P 1 to be provided.
第10圖係顯示噴射至基板W之處理液的圖案，該基板W如第9圖所示，係於設有第1噴嘴體23及第2噴嘴體24之複數個安裝構件22之下方加以搬送者。Fig. 10 is a view showing a pattern of a processing liquid sprayed onto a substrate W. The substrate W is transported under a plurality of mounting members 22 provided with the first nozzle body 23 and the second nozzle body 24 as shown in Fig. 9. By.
依第2實施形態，係於與基板W之搬送方向交叉之寬度方向的兩端部，分別藉由兩個第1噴嘴體23而以2列噴射供給四角形的第1圖案S1。According to the second embodiment, the rectangular first pattern S1 is ejected in two rows by the two first nozzle bodies 23 at both end portions in the width direction intersecting the transport direction of the substrate W.
因此，相較於噴射至基板W的寬度方向兩端部之第1圖案S1為1列之態樣，係可更進一步減少由基板W的寬度方向兩端部流落的處理液之量。Therefore, the amount of the processing liquid flowing down at both end portions in the width direction of the substrate W can be further reduced as compared with the case where the first pattern S1 which is ejected to both end portions in the width direction of the substrate W is one line.
前述第2實施形態中，於基板W之寬度方向兩端部並列的四角形圖案，依基板的大小等可為3列以上，其列數越多，供給於基板之上方面的處理液越不易由寬度方向兩端部流落。即，於基板W之寬度方向兩端部並列之四角形圖案的列數不限於僅1列，亦可為複數列。In the second embodiment, the square pattern in which the both ends of the substrate W are arranged in the width direction may be three or more rows depending on the size of the substrate, and the number of rows is larger, and the processing liquid supplied to the substrate is less likely to be used. Flowing at both ends in the width direction. In other words, the number of rows of the quadrangular patterns juxtaposed at both end portions in the width direction of the substrate W is not limited to only one column, and may be plural columns.
第11圖及第12圖係顯示本發明之第3實施形態。於此第3實施形態中，如第11圖所示，設置有構成搬送機構之搬送滾輪5的搬送軸4，係以讓軸線相對於水平線H之預定角度θ，譬如5～10度之角度傾斜而配置。Fig. 11 and Fig. 12 show a third embodiment of the present invention. In the third embodiment, as shown in Fig. 11, the transport shaft 4 that is provided with the transport roller 5 constituting the transport mechanism is inclined at an angle θ of, for example, 5 to 10 degrees with respect to the horizontal line H by a predetermined angle θ. And configuration.
據此，藉由前述搬送滾輪5搬送之基板W係相對於與搬送方向交叉之寬度，以5～10度之角度傾斜搬送。As a result, the substrate W conveyed by the transport roller 5 is obliquely transported at an angle of 5 to 10 degrees with respect to the width intersecting the transport direction.
於前述基板W之上方面，如第11圖、第12圖所示，基板W之傾斜方向的上端側之端部，即，於寬度方向之一端部，係藉由第1噴嘴體23以四角形圖案S1而不產生間隙之緊密的狀態噴射供給處理液，於前述一端部除外之其他的部分，則藉由第2噴嘴體24以譬如圓形圖案S2而產生間隙C之疏鬆的狀態噴射供給處理液。前述第1、第2噴嘴體23、24係與第1實施形態相同地，安裝於沿基板W之搬送方向以間距P1 之間隔而配置之安裝構件22。As shown in FIG. 11 and FIG. 12, the end portion of the upper end side in the oblique direction of the substrate W, that is, one end portion in the width direction is formed by the first nozzle body 23 in a square shape. The pattern S1 is supplied to the processing liquid in a state in which the gap is not generated in a tight state, and the other portion except the one end portion is in a loose state in which the gap C is generated by the second nozzle body 24 in a circular pattern S2. liquid. Mounting the first member, the second system and the nozzle body 23, 24 the same manner as the first embodiment, mounted on the substrate W along the conveyance direction at the pitch P of the interval 1 22 is disposed.
又，相對於基板W之搬送方向的噴射區域R與第1實施形態相同地，係較沿基板W之搬送方向的長度尺寸大地加以設定。In the same manner as in the first embodiment, the ejection region R in the transport direction of the substrate W is set to be larger than the length dimension in the transport direction of the substrate W.
讓基板W相對於與搬送方向交叉之寬度方向傾斜搬送時，噴射供給於基板W之上方面的處理液之一部分，係不易由成為基板W之傾斜方向的上端側之寬度方向的一端部流落，但基板W之傾斜角度小時會有流落之情形。處理液的一部分若由基板W之傾斜方向的上端側流落，將變得無法均一地對基板W之板面進行處理。When the substrate W is obliquely transported in the width direction intersecting the transport direction, one portion of the processing liquid that is ejected and supplied onto the substrate W is less likely to flow from the one end portion in the width direction of the upper end side in the oblique direction of the substrate W. However, there is a case where the inclination angle of the substrate W is small. When a part of the processing liquid flows down from the upper end side in the oblique direction of the substrate W, the surface of the substrate W cannot be uniformly processed.
因此，若於基板W之寬度方向一端部藉由四角形圖案S1以不產生間隙之緊密的狀態噴射供給處理液，係可防止處理液由基板W之寬度方向一端部流落。Therefore, when the processing liquid is ejected in a state where the gap is not generated by the square pattern S1 at one end portion in the width direction of the substrate W, it is possible to prevent the processing liquid from flowing from one end portion in the width direction of the substrate W.
其結果，噴射供給於基板W之上方面的處理液，係由基板W之傾斜方向上端側朝下端側均一地流下，藉由該處理液的流動，可均一地對基板W之板面進行處理。As a result, the processing liquid supplied to the upper surface of the substrate W is uniformly flowed from the upper end side toward the lower end side in the oblique direction of the substrate W, and the surface of the substrate W can be uniformly processed by the flow of the processing liquid. .
前述各實施形態中，作為四角形圖案，係說明以正方形的圖案而噴射供給處理液之場合，但作為四角形圖案，可不為正方形，亦可為矩形，重點是可於基板之寬度方向的兩端部以緊密的狀態噴射供給處理液之形狀。In the above-described embodiments, the rectangular pattern is described as a case where the processing liquid is sprayed and supplied in a square pattern. However, the square pattern may not be square or rectangular, and the focus may be on both ends in the width direction of the substrate. The shape of the supply treatment liquid is sprayed in a compact state.
又，於基板之寬度方向的兩端部噴射處理液之四角形圖案，亦可為一部分由基板之寬度方向的端緣朝外側脫離之狀態。Moreover, the square pattern of the processing liquid is ejected at both end portions in the width direction of the substrate, and a part of the edge of the substrate in the width direction may be detached outward.
再者，於除去基板之寬度方向兩端部之部分供給處理液之圖案，亦可取代圓形圖案而為橢圓形圖案，要點係可以產生間隙之疏鬆的狀態供給處理液之形狀。Further, the pattern of the processing liquid is supplied to the portions at both end portions in the width direction of the substrate, and the elliptical pattern may be provided instead of the circular pattern, and the shape may be supplied to the shape of the processing liquid in a loose state.
進一步，亦可改變第1、第2噴嘴體之支撐高度，以預定的重疊範圍讓相鄰之四角形圖案S1及圓形圖案S2重疊而供給處理液。Further, the support height of the first and second nozzle bodies may be changed, and the adjacent quadrangular pattern S1 and the circular pattern S2 may be overlapped by a predetermined overlapping range to supply the processing liquid.
1．．．腔室1. . . Chamber
2．．．搬入口2. . . Move in
3．．．搬出口3. . . Move out
4．．．搬送軸(搬送機構)4. . . Transfer shaft (transport mechanism)
5．．．搬送滾輪(搬送機構)5. . . Transport roller (transport mechanism)
6．．．軸承6. . . Bearing
7．．．蝸輪7. . . Worm gear
8．．．蝸形齒輪8. . . Spiral gear
9．．．從動軸9. . . Driven shaft
11．．．從動帶輪11. . . Driven pulley
12．．．驅動源(搬送機構)12. . . Drive source (transport mechanism)
12a．．．旋轉軸12a. . . Rotary axis
13．．．驅動帶輪13. . . Drive pulley
14．．．鏈帶14. . . Chain belt
17．．．軸承17. . . Bearing
18．．．觸壓軸18. . . Touching shaft
19．．．觸壓滾輪19. . . Touch roller
22．．．安裝構件twenty two. . . Mounting member
23．．．第1噴嘴體twenty three. . . First nozzle body
24．．．第2噴嘴體twenty four. . . Second nozzle body
23a,24a．．．噴嘴尖口23a, 24a. . . Nozzle tip
23b,24b．．．噴射孔23b, 24b. . . Spray hole
23c,24c．．．供給孔23c, 24c. . . Supply hole
25．．．高度調整機構25. . . Height adjustment mechanism
26．．．連結片26. . . Link
27．．．安裝桿27. . . Mounting rod
28．．．導引構件28. . . Guide member
29．．．托架29. . . bracket
31．．．導引孔31. . . Guide hole
32．．．蝶形螺帽32. . . Butterfly nut
33．．．墊片33. . . Gasket
34．．．調整螺釘34. . . Adjustment screw
35．．．支撐構件35. . . Support member
36．．．螺帽36. . . Nut
A,B．．．折線A, B. . . Polyline
C,C1,C2．．．間隙C, C1, C2. . . gap
H．．．水平線H. . . Horizontal line
R．．．噴射區域R. . . Spray area
S1．．．第1圖案S1. . . First pattern
S2．．．第2圖案S2. . . Second pattern
P1 ,P2 ．．．間距P 1 , P 2 . . . spacing
W．．．基板W. . . Substrate
θ．．．預定角度θ. . . Predetermined angle
第1圖係顯示沿本發明第1實施形態之處理槽的長向方向之概略的構成之剖面圖。Fig. 1 is a cross-sectional view showing a schematic configuration of a longitudinal direction of a treatment tank according to a first embodiment of the present invention.
第2圖係沿處理槽之寬度方向的放大剖面圖。Fig. 2 is an enlarged cross-sectional view along the width direction of the treatment tank.
第3圖係沿處理槽之寬度方向一端部的放大圖。Fig. 3 is an enlarged view of one end portion in the width direction of the treatment tank.
第4A圖係第1噴嘴體之噴嘴尖口的立體圖。Fig. 4A is a perspective view of the nozzle tip of the first nozzle body.
第4B圖係第2噴嘴體之噴嘴尖口的立體圖。Fig. 4B is a perspective view of the nozzle tip of the second nozzle body.
第5圖係顯示自第1、第2噴嘴體於基板之寬度方向噴射處理液之狀態的立體圖。Fig. 5 is a perspective view showing a state in which the processing liquid is ejected from the first and second nozzle bodies in the width direction of the substrate.
第6圖係顯示自第1、第2噴嘴體噴射至基板之處理液之圖案的平面圖。Fig. 6 is a plan view showing a pattern of a treatment liquid ejected from the first and second nozzle bodies to the substrate.
第7圖係顯示處理液由第1、第2噴嘴體以與第6圖所示之圖案不同的圖案噴射於基板之狀態的平面圖。Fig. 7 is a plan view showing a state in which the processing liquid is ejected onto the substrate by the first and second nozzle bodies in a pattern different from the pattern shown in Fig. 6.
第8圖係比較以第7圖所示之四角形圖案以及圓形圖案噴射蝕刻液之場合，與僅交錯狀噴射圓形圖案之場合的蝕刻量。Fig. 8 is a view showing an etching amount in the case where the etching liquid is ejected in the square pattern and the circular pattern shown in Fig. 7 and in the case where the circular pattern is ejected only in a staggered manner.
第9圖係顯示由表示本發明之第2實施形態之第1、第2噴嘴體於基板之寬度方向噴射處理液之狀態的立體圖。Fig. 9 is a perspective view showing a state in which the first and second nozzle bodies of the second embodiment of the present invention are sprayed with the treatment liquid in the width direction of the substrate.
第10圖係顯示由第1、第2噴嘴體噴射至基板之處理液之圖案的平面圖。Fig. 10 is a plan view showing a pattern of a treatment liquid sprayed onto a substrate by the first and second nozzle bodies.
第11圖係顯示本發明第3實施形態之傾斜搬送的基板之圖。Fig. 11 is a view showing a substrate which is obliquely conveyed according to a third embodiment of the present invention.
第12圖係顯示由第1、第2噴嘴體噴射至第11圖所示之基板之處理液的圖案之平面圖。Fig. 12 is a plan view showing a pattern of a treatment liquid sprayed from the first and second nozzle bodies to the substrate shown in Fig. 11.
1．．．腔室1. . . Chamber
2．．．搬入口2. . . Move in
3．．．搬出口3. . . Move out
4．．．搬送軸(搬送機構)4. . . Transfer shaft (transport mechanism)
5．．．搬送滾輪(搬送機構)5. . . Transport roller (transport mechanism)
22．．．安裝構件twenty two. . . Mounting member
23．．．第1噴嘴體twenty three. . . First nozzle body
24．．．第2噴嘴體twenty four. . . Second nozzle body
23a,24a．．．噴嘴尖口23a, 24a. . . Nozzle tip
P1 ．．．間距P 1 . . . spacing
W．．．基板W. . . Substrate
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| JP2004275989A (en) * | 2003-03-19 | 2004-10-07 | Sumitomo Precision Prod Co Ltd | Substrate processing apparatus |
| JP4495618B2 (en) * | 2004-03-29 | 2010-07-07 | 芝浦メカトロニクス株式会社 | Substrate processing apparatus and processing method |
| JP2006135162A (en) * | 2004-11-08 | 2006-05-25 | Fuji Photo Film Co Ltd | Spraying method and apparatus thereof |
| JP2007088289A (en) | 2005-09-22 | 2007-04-05 | Sharp Corp | Device and method for processing substrate |
| JP4859242B2 (en) * | 2006-07-27 | 2012-01-25 | 芝浦メカトロニクス株式会社 | Substrate processing equipment |
-
2009
- 2009-09-02 JP JP2009202843A patent/JP5352388B2/en active Active
-
2010
- 2010-08-19 TW TW099127759A patent/TWI431676B/en active
- 2010-09-01 CN CN2010102706711A patent/CN102001834B/en active Active
- 2010-09-01 KR KR1020100085441A patent/KR101153050B1/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| CN102001834B (en) | 2013-03-27 |
| CN102001834A (en) | 2011-04-06 |
| KR101153050B1 (en) | 2012-06-04 |
| KR20110025137A (en) | 2011-03-09 |
| JP2011054790A (en) | 2011-03-17 |
| JP5352388B2 (en) | 2013-11-27 |
| TW201137955A (en) | 2011-11-01 |
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