JP2006278578A - 集積型半導体レーザ素子およびその製造方法 - Google Patents

集積型半導体レーザ素子およびその製造方法 Download PDF

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Publication number
JP2006278578A
JP2006278578A JP2005093234A JP2005093234A JP2006278578A JP 2006278578 A JP2006278578 A JP 2006278578A JP 2005093234 A JP2005093234 A JP 2005093234A JP 2005093234 A JP2005093234 A JP 2005093234A JP 2006278578 A JP2006278578 A JP 2006278578A
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JP
Japan
Prior art keywords
laser element
semiconductor laser
layer
semiconductor
substrate
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Pending
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JP2005093234A
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English (en)
Japanese (ja)
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JP2006278578A5 (https=
Inventor
Hiroaki Izu
博昭 伊豆
Tsutomu Yamaguchi
勤 山口
Kiyoshi Ota
潔 太田
Masayuki Hata
雅幸 畑
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
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Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2005093234A priority Critical patent/JP2006278578A/ja
Priority to US11/219,875 priority patent/US7512167B2/en
Priority to CN 200510105528 priority patent/CN1753261B/zh
Priority to CN201010164149A priority patent/CN101826703A/zh
Publication of JP2006278578A publication Critical patent/JP2006278578A/ja
Publication of JP2006278578A5 publication Critical patent/JP2006278578A5/ja
Priority to US12/256,854 priority patent/US7961768B2/en
Priority to US13/100,720 priority patent/US20110211609A1/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)
JP2005093234A 2004-09-24 2005-03-28 集積型半導体レーザ素子およびその製造方法 Pending JP2006278578A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2005093234A JP2006278578A (ja) 2005-03-28 2005-03-28 集積型半導体レーザ素子およびその製造方法
US11/219,875 US7512167B2 (en) 2004-09-24 2005-09-07 Integrated semiconductor laser device and method of fabricating the same
CN 200510105528 CN1753261B (zh) 2004-09-24 2005-09-23 集成型半导体激光元件及其制造方法
CN201010164149A CN101826703A (zh) 2004-09-24 2005-09-23 集成型半导体激光元件及其制造方法
US12/256,854 US7961768B2 (en) 2004-09-24 2008-10-23 Integrated semiconductor laser device and method of fabricating the same
US13/100,720 US20110211609A1 (en) 2004-09-24 2011-05-04 Integrated semiconductor laser device and method of fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005093234A JP2006278578A (ja) 2005-03-28 2005-03-28 集積型半導体レーザ素子およびその製造方法

Publications (2)

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JP2006278578A true JP2006278578A (ja) 2006-10-12
JP2006278578A5 JP2006278578A5 (https=) 2007-07-19

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JP2005093234A Pending JP2006278578A (ja) 2004-09-24 2005-03-28 集積型半導体レーザ素子およびその製造方法

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JP (1) JP2006278578A (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124109A (ja) * 2006-11-09 2008-05-29 Sony Corp 半導体レーザ、半導体レーザの製造方法、光ピックアップ、光ディスク装置、半導体装置および半導体装置の製造方法
CN113454857A (zh) * 2019-02-26 2021-09-28 新唐科技日本株式会社 半导体激光装置以及半导体激光元件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334274A (ja) * 1993-05-07 1994-12-02 Xerox Corp 多ダイオード・レーザー・アレイ
JPH08181394A (ja) * 1994-12-21 1996-07-12 Mitsubishi Electric Corp 半導体レーザ装置とこの半導体レーザ装置を備えた光ディスク装置
JPH1056230A (ja) * 1996-08-09 1998-02-24 Nec Corp 半導体レーザ装置
JPH11340587A (ja) * 1998-05-06 1999-12-10 Xerox Corp フリップチップ接合で製作した多重波長レ―ザアレ―
JP2001230502A (ja) * 2000-02-15 2001-08-24 Sony Corp 発光装置およびそれを用いた光装置
JP2001332805A (ja) * 2000-05-24 2001-11-30 Samsung Electro Mech Co Ltd ２波長レーザーダイオード及びその製造方法
JP2004207479A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06334274A (ja) * 1993-05-07 1994-12-02 Xerox Corp 多ダイオード・レーザー・アレイ
JPH08181394A (ja) * 1994-12-21 1996-07-12 Mitsubishi Electric Corp 半導体レーザ装置とこの半導体レーザ装置を備えた光ディスク装置
JPH1056230A (ja) * 1996-08-09 1998-02-24 Nec Corp 半導体レーザ装置
JPH11340587A (ja) * 1998-05-06 1999-12-10 Xerox Corp フリップチップ接合で製作した多重波長レ―ザアレ―
JP2001230502A (ja) * 2000-02-15 2001-08-24 Sony Corp 発光装置およびそれを用いた光装置
JP2001332805A (ja) * 2000-05-24 2001-11-30 Samsung Electro Mech Co Ltd ２波長レーザーダイオード及びその製造方法
JP2004207479A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008124109A (ja) * 2006-11-09 2008-05-29 Sony Corp 半導体レーザ、半導体レーザの製造方法、光ピックアップ、光ディスク装置、半導体装置および半導体装置の製造方法
CN113454857A (zh) * 2019-02-26 2021-09-28 新唐科技日本株式会社 半导体激光装置以及半导体激光元件

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