JP2006256939A - 窒化ケイ素粉末の製造法 - Google Patents
窒化ケイ素粉末の製造法 Download PDFInfo
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- JP2006256939A JP2006256939A JP2005080071A JP2005080071A JP2006256939A JP 2006256939 A JP2006256939 A JP 2006256939A JP 2005080071 A JP2005080071 A JP 2005080071A JP 2005080071 A JP2005080071 A JP 2005080071A JP 2006256939 A JP2006256939 A JP 2006256939A
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- 239000000843 powder Substances 0.000 title claims abstract description 168
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 78
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims abstract description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 163
- 239000002245 particle Substances 0.000 claims abstract description 109
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 83
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 71
- 239000011246 composite particle Substances 0.000 claims abstract description 50
- 238000005121 nitriding Methods 0.000 claims abstract description 38
- 239000003607 modifier Substances 0.000 claims abstract description 36
- 239000007858 starting material Substances 0.000 claims abstract description 15
- 238000004519 manufacturing process Methods 0.000 claims description 34
- 230000002829 reductive effect Effects 0.000 claims description 11
- 239000002131 composite material Substances 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 27
- 239000012535 impurity Substances 0.000 abstract description 13
- 229910052799 carbon Inorganic materials 0.000 description 24
- 238000010438 heat treatment Methods 0.000 description 14
- 238000006722 reduction reaction Methods 0.000 description 11
- 230000009467 reduction Effects 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- 229910004298 SiO 2 Inorganic materials 0.000 description 9
- 238000003795 desorption Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 9
- -1 silicic anhydride Chemical compound 0.000 description 9
- 239000006229 carbon black Substances 0.000 description 8
- 238000002156 mixing Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- 238000000576 coating method Methods 0.000 description 7
- 239000013078 crystal Substances 0.000 description 7
- 239000010419 fine particle Substances 0.000 description 7
- 229920001296 polysiloxane Polymers 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000005469 granulation Methods 0.000 description 5
- 230000003179 granulation Effects 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000012299 nitrogen atmosphere Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005262 decarbonization Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- 239000011593 sulfur Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000007906 compression Methods 0.000 description 2
- 230000006835 compression Effects 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- 238000006392 deoxygenation reaction Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000000635 electron micrograph Methods 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 description 2
- 238000001132 ultrasonic dispersion Methods 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- 238000004438 BET method Methods 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- 241001272996 Polyphylla fullo Species 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- 229920002472 Starch Polymers 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- XGZGKDQVCBHSGI-UHFFFAOYSA-N butyl(triethoxy)silane Chemical compound CCCC[Si](OCC)(OCC)OCC XGZGKDQVCBHSGI-UHFFFAOYSA-N 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- BAAAEEDPKUHLID-UHFFFAOYSA-N decyl(triethoxy)silane Chemical compound CCCCCCCCCC[Si](OCC)(OCC)OCC BAAAEEDPKUHLID-UHFFFAOYSA-N 0.000 description 1
- ZZNQQQWFKKTOSD-UHFFFAOYSA-N diethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)C1=CC=CC=C1 ZZNQQQWFKKTOSD-UHFFFAOYSA-N 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- AHUXYBVKTIBBJW-UHFFFAOYSA-N dimethoxy(diphenyl)silane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)C1=CC=CC=C1 AHUXYBVKTIBBJW-UHFFFAOYSA-N 0.000 description 1
- WHGNXNCOTZPEEK-UHFFFAOYSA-N dimethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CCCOCC1CO1 WHGNXNCOTZPEEK-UHFFFAOYSA-N 0.000 description 1
- YYLGKUPAFFKGRQ-UHFFFAOYSA-N dimethyldiethoxysilane Chemical compound CCO[Si](C)(C)OCC YYLGKUPAFFKGRQ-UHFFFAOYSA-N 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 239000006232 furnace black Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- PHQOGHDTIVQXHL-UHFFFAOYSA-N n'-(3-trimethoxysilylpropyl)ethane-1,2-diamine Chemical compound CO[Si](OC)(OC)CCCNCCN PHQOGHDTIVQXHL-UHFFFAOYSA-N 0.000 description 1
- MSRJTTSHWYDFIU-UHFFFAOYSA-N octyltriethoxysilane Chemical compound CCCCCCCC[Si](OCC)(OCC)OCC MSRJTTSHWYDFIU-UHFFFAOYSA-N 0.000 description 1
- 229960003493 octyltriethoxysilane Drugs 0.000 description 1
- 150000003961 organosilicon compounds Chemical class 0.000 description 1
- 229910052574 oxide ceramic Inorganic materials 0.000 description 1
- 239000011224 oxide ceramic Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000008107 starch Substances 0.000 description 1
- 235000019698 starch Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- WUMSTCDLAYQDNO-UHFFFAOYSA-N triethoxy(hexyl)silane Chemical compound CCCCCC[Si](OCC)(OCC)OCC WUMSTCDLAYQDNO-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
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- Compositions Of Macromolecular Compounds (AREA)
- Silicon Compounds (AREA)
Abstract
【解決手段】 還元窒化法における窒化ケイ素粉末の製造法において、出発原料としてシリカ粒子粉末の粒子表面が表面改質剤によって被覆されていると共に該表面改質剤被覆シリカ粒子表面に炭素粉末が付着している複合粒子粉末を用いる窒化ケイ素粉末の製造法である
【選択図】 なし
Description
3SiO2+6C+2N2 → Si3N4+6CO
本発明において最も重要な点は、還元窒化法における窒化ケイ素粉末の製造法において、シリカ粒子粉末の粒子表面が表面改質剤によって被覆されていると共に該表面改質剤被覆シリカ粒子表面に炭素粉末が付着している複合粒子粉末を出発原料として用いることにより、高い窒化率及び高α化率を有すると共に、不純物が少なく微粒子からなる窒化ケイ素粉末を安価に得ることができるという事実である。
3SiO2+6C+2N2 → Si3N4+6CO
シリカ粉末の含水率(%)={(Wa−We)/Wa}×100
Wa:シリカ粒子粉末の重量
We:1000℃で2時間灼熱後のシリカ粒子粉末の重量
炭素粉末の脱離率(%)={(Wa−We)/Wa}×100
Wa:複合粒子粉末の炭素粉末付着量
We:脱離テスト後の複合粒子粉末の炭素粉末付着量
α化率(%)=(Ia102+Ia210)/(Ia102+Ia210+Ib101+Ib210)×100
シリカ粒子粉末(シリカ粒子1)(粒子形状:球状、平均粒子径:0.012μm、BET比表面積値:209.5m2/g、含水率0.4%)10kgに、メチルハイドロジェンポリシロキサン(商品名:TSF484:GE東芝シリコーン株式会社製)400gを、エッジランナーを稼動させながらシリカ粒子粉末に添加し、588N/cmの線荷重で40分間混合攪拌を行った。なお、この時の攪拌速度は22rpmで行った。
前記複合粒子粉末100重量部を出発原料とし、種晶としてα化率92%、平均粒子径0.66μmの窒化ケイ素粉末を6.71重量部(複合粒子粉末中のSiO2 100重量部に対して10重量部)を混合して黒鉛製容器に入れ、N2ガスを流しながら1450℃で5時間加熱焼成を行い、還元窒化処理を行った。反応終了時のCO濃度は9ppmであった。得られた粉末を、空気中700℃で3時間加熱処理を行い、未反応炭素を燃焼除去して窒化ケイ素粉末を得た。
シリカ粒子粉末として表1に示す特性を有するシリカ粒子粉末を用意した。
炭素粉末として表2に示す特性を有する炭素粉末を用意した。
複合粒子2〜3、比較複合粒子1:
シリカ粒子粉末の種類、表面改質剤による被覆工程における添加物の種類、添加量、エッジランナー処理の線荷重及び時間、炭素粉末の付着工程における炭素粉末の種類、添加量、エッジランナー処理の線荷重及び時間を種々変化させた以外は、前記複合粒子1と同様にして複合粒子粉末を得た。
実施例2〜3、比較例1:
出発原料の種類、種晶の配合割合、還元窒化処理における反応温度及び反応時間、脱炭素処理における加熱温度及び加熱時間を種々変化させた以外は、前記実施例1の窒化ケイ素の製造と同様にして窒化ケイ素粉末を得た。
Claims (2)
- 還元窒化法における窒化ケイ素粉末の製造法において、出発原料としてシリカ粒子粉末の粒子表面が表面改質剤によって被覆されていると共に該表面改質剤被覆シリカ粒子表面に炭素粉末が付着している複合粒子粉末を用いることを特徴とする窒化ケイ素粉末の製造法。
- 複合粒子粉末のシリカ粒子粉末と炭素粉末の重量割合比が1.0:0.4〜1.0:1.0であることを特徴とする請求項1記載の窒化ケイ素粉末の製造法。
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JP2006256939A true JP2006256939A (ja) | 2006-09-28 |
JP4844709B2 JP4844709B2 (ja) | 2011-12-28 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006256940A (ja) * | 2005-03-18 | 2006-09-28 | Toda Kogyo Corp | 窒化アルミニウム粉末の製造法 |
CN116813354A (zh) * | 2023-06-06 | 2023-09-29 | 东莞理工学院 | 一种原位制备氮化硅陶瓷的方法、制得的氮化硅陶瓷及其应用 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP7324063B2 (ja) | 2019-06-19 | 2023-08-09 | 矢崎エナジーシステム株式会社 | 真空断熱体の製造方法、及び真空断熱体 |
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JP2002128597A (ja) * | 2000-10-24 | 2002-05-09 | Furukawa Co Ltd | 窒化珪素ウィスカーの製造方法 |
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JPS4945000A (ja) * | 1972-09-05 | 1974-04-27 | ||
JPS5515946A (en) * | 1978-07-19 | 1980-02-04 | Toray Ind Inc | Production of metal nitride fine powder |
JPS5617910A (en) * | 1979-07-23 | 1981-02-20 | Toray Ind Inc | Manufacture of silicon nitride powder |
JPS59107976A (ja) * | 1982-12-07 | 1984-06-22 | 東芝セラミツクス株式会社 | 易焼結性窒化ケイ素粉末の製造方法 |
JPS6036312A (ja) * | 1983-08-08 | 1985-02-25 | Nippon Cement Co Ltd | α型窒化けい素の製造法 |
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JPS62241810A (ja) * | 1986-04-03 | 1987-10-22 | アトケム | 熱炭素還元による窒化ケイ素のセラミツクス製造用粉末及びその製造方法 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006256940A (ja) * | 2005-03-18 | 2006-09-28 | Toda Kogyo Corp | 窒化アルミニウム粉末の製造法 |
JP4743387B2 (ja) * | 2005-03-18 | 2011-08-10 | 戸田工業株式会社 | 窒化アルミニウム粉末の製造法 |
CN116813354A (zh) * | 2023-06-06 | 2023-09-29 | 东莞理工学院 | 一种原位制备氮化硅陶瓷的方法、制得的氮化硅陶瓷及其应用 |
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