JP2006245610A - 半導体製造装置用保持体 - Google Patents
半導体製造装置用保持体 Download PDFInfo
- Publication number
- JP2006245610A JP2006245610A JP2006141088A JP2006141088A JP2006245610A JP 2006245610 A JP2006245610 A JP 2006245610A JP 2006141088 A JP2006141088 A JP 2006141088A JP 2006141088 A JP2006141088 A JP 2006141088A JP 2006245610 A JP2006245610 A JP 2006245610A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor manufacturing
- holding body
- insulating tube
- manufacturing apparatus
- ceramic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 239000000919 ceramic Substances 0.000 claims abstract description 147
- 238000010438 heat treatment Methods 0.000 claims abstract description 44
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims abstract description 31
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 41
- 239000012298 atmosphere Substances 0.000 claims description 21
- 229920005989 resin Polymers 0.000 claims description 15
- 239000011347 resin Substances 0.000 claims description 15
- 238000007789 sealing Methods 0.000 claims description 12
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 9
- 238000000206 photolithography Methods 0.000 claims description 9
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 8
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 claims description 7
- 229910052863 mullite Inorganic materials 0.000 claims description 7
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 6
- 238000005219 brazing Methods 0.000 claims description 5
- 238000013007 heat curing Methods 0.000 claims description 5
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 229910052878 cordierite Inorganic materials 0.000 claims description 3
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001220 stainless steel Inorganic materials 0.000 claims description 3
- 239000010935 stainless steel Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000012423 maintenance Methods 0.000 claims description 2
- 239000012495 reaction gas Substances 0.000 claims description 2
- 229910052596 spinel Inorganic materials 0.000 claims description 2
- 239000011029 spinel Substances 0.000 claims description 2
- 238000005245 sintering Methods 0.000 description 28
- 239000010408 film Substances 0.000 description 24
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 19
- 239000000843 powder Substances 0.000 description 18
- 239000011230 binding agent Substances 0.000 description 15
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 11
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 10
- 235000012431 wafers Nutrition 0.000 description 10
- 238000001125 extrusion Methods 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 239000002904 solvent Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 239000002270 dispersing agent Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 8
- 238000004898 kneading Methods 0.000 description 8
- 239000004014 plasticizer Substances 0.000 description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 5
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 238000005304 joining Methods 0.000 description 4
- 238000001694 spray drying Methods 0.000 description 4
- 229910017770 Cu—Ag Inorganic materials 0.000 description 3
- 239000001856 Ethyl cellulose Substances 0.000 description 3
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 3
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 3
- 229920001249 ethyl cellulose Polymers 0.000 description 3
- 235000019325 ethyl cellulose Nutrition 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical group [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000006061 abrasive grain Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 229910017944 Ag—Cu Inorganic materials 0.000 description 1
- 229910052580 B4C Inorganic materials 0.000 description 1
- -1 Si 3 N 4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Images
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006141088A JP2006245610A (ja) | 2002-03-13 | 2006-05-22 | 半導体製造装置用保持体 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002067915 | 2002-03-13 | ||
| JP2002154856 | 2002-05-29 | ||
| JP2006141088A JP2006245610A (ja) | 2002-03-13 | 2006-05-22 | 半導体製造装置用保持体 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003068821A Division JP4348094B2 (ja) | 2002-03-13 | 2003-03-13 | 半導体製造装置用保持体 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006245610A true JP2006245610A (ja) | 2006-09-14 |
| JP2006245610A5 JP2006245610A5 (enrdf_load_stackoverflow) | 2009-05-28 |
Family
ID=37051603
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006141088A Pending JP2006245610A (ja) | 2002-03-13 | 2006-05-22 | 半導体製造装置用保持体 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2006245610A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094138A (ja) * | 2007-10-04 | 2009-04-30 | Sei Hybrid Kk | ウエハ保持体および半導体製造装置 |
| JP2010103393A (ja) * | 2008-10-27 | 2010-05-06 | Shinko Electric Ind Co Ltd | 静電チャック |
| JP2020150247A (ja) * | 2019-03-12 | 2020-09-17 | 鴻創應用科技有限公司Ｈｏｎｇ Ｃｈｕａｎｇ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ | セラミックス回路複合構造およびその製造方法 |
| JP2021132217A (ja) * | 2016-11-29 | 2021-09-09 | 住友電気工業株式会社 | ウエハ保持体 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059740A (ja) * | 1991-03-26 | 1993-01-19 | Ngk Insulators Ltd | 半導体ウエハー加熱装置 |
| JPH10242252A (ja) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | ウエハ加熱装置 |
| JP2000077504A (ja) * | 1998-08-31 | 2000-03-14 | Nikon Corp | ステージ装置及びそれを用いた光学装置 |
| JP2001319758A (ja) * | 2000-03-03 | 2001-11-16 | Ibiden Co Ltd | ホットプレートユニット |
-
2006
- 2006-05-22 JP JP2006141088A patent/JP2006245610A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH059740A (ja) * | 1991-03-26 | 1993-01-19 | Ngk Insulators Ltd | 半導体ウエハー加熱装置 |
| JPH10242252A (ja) * | 1997-02-28 | 1998-09-11 | Kyocera Corp | ウエハ加熱装置 |
| JP2000077504A (ja) * | 1998-08-31 | 2000-03-14 | Nikon Corp | ステージ装置及びそれを用いた光学装置 |
| JP2001319758A (ja) * | 2000-03-03 | 2001-11-16 | Ibiden Co Ltd | ホットプレートユニット |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009094138A (ja) * | 2007-10-04 | 2009-04-30 | Sei Hybrid Kk | ウエハ保持体および半導体製造装置 |
| JP2010103393A (ja) * | 2008-10-27 | 2010-05-06 | Shinko Electric Ind Co Ltd | 静電チャック |
| JP2021132217A (ja) * | 2016-11-29 | 2021-09-09 | 住友電気工業株式会社 | ウエハ保持体 |
| JP7182083B2 (ja) | 2016-11-29 | 2022-12-02 | 住友電気工業株式会社 | ウエハ保持体 |
| US12046488B2 (en) | 2016-11-29 | 2024-07-23 | Sumitomo Electric Industries, Ltd. | Semiconductor manufacturing apparatus and wafer holding table for semiconductor manufacturing apparatus |
| JP2020150247A (ja) * | 2019-03-12 | 2020-09-17 | 鴻創應用科技有限公司Ｈｏｎｇ Ｃｈｕａｎｇ Ａｐｐｌｉｅｄ Ｔｅｃｈｎｏｌｏｇｙ Ｃｏ．，Ｌｔｄ | セラミックス回路複合構造およびその製造方法 |
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