JP2006234511A - Microprobe manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a microprobe manufacturing method which can form probes with a high aspect ratio and form the probes with a narrow pitch. <P>SOLUTION: The microprobe manufacturing method is for a microprobe 1 having a substrate 3, a wire 13 having a predetermined shape formed on the substrate 3, and a probe 19 made of predetermined metal formed on the wire 13. The method comprises an electroforming preparation process for forming the wire 13 having a predetermined shape on the substrate 3 and an electroforming process for electroforming the probe 19 on the wire 13 by electroforming. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a microprobe manufacturing method and a microprobe.

  Currently, a scanning probe microscope (Scanning Probe Microscope) is known as a microscope for observing a nanometer-order minute shape on the surface of a sample. In particular, an atomic force microscope (AFM) using a cantilever provided with a probe (probe) at its tip as a scanning probe is known.

As probes used in probe microscopes such as these atomic force microscopes, probes formed of silicon or silicon nitride (silicon nitride) are widely used.
This probe is formed at the tip of the cantilever part integrally with the cantilever part by a photolithography process using a silicon on insulator (SOI) wafer (see, for example, Non-Patent Document 1).

In the manufacturing process of a silicon semiconductor device, after a circuit including a large number of LSI elements is formed on a wafer, a probe is brought into contact with a predetermined pad that is electrically connected to the circuit, so that a basic electric circuit of the circuit is obtained. There is a wafer inspection process for inspecting characteristics.
In this inspection process, a probe card having a large number of probes arranged in a layout substantially the same as the layout of the pads is used as a wafer inspection jig.
As the above-mentioned probe card, one using a thin wire made of tungsten or the like as a probe is generally known (for example, see Patent Documents 1 and 2).
Hiroshi Takahashi, Kazunori Ando, Yoshi Shirakabebe, Self-sensing piezoresistive cantilever and tropicoscopy at the United States JP 2000-88884 A JP 2002-22771 A

Non-Patent Document 1 described above discloses a technique in which a probe is formed at the tip of a cantilever portion by a reactive ion etching (RIE) process using a silicon on insulator (SOI) wafer.
In this technique, the shape of the probe becomes a cone shape with a large diameter at the root portion and a sharp tip due to restrictions on the manufacturing process. Therefore, there is a problem that it is difficult to form a probe having a high aspect ratio ((probe height) / (probe root diameter)).
When such a low aspect ratio probe is used in an atomic force microscope, for example, when observing a surface shape having a substantially vertical surface, the side surface of the cone-shaped probe is in contact with the substantially vertical surface. Therefore, there is a problem that an accurate surface shape cannot be observed.

Furthermore, when such a probe is used for the above probe card, the silicon probe does not have sufficient conductivity to perform inspection, and therefore it is necessary to separately form wiring for measurement on the probe. There was a problem that the manufacturing process increased.
In addition, when such a probe is used in the above-described probe card, the probe shape is conical and the base part of the probe interferes, so that the pitch interval of the probe is limited, so that the layout of the probe is limited. There was a risk of being unable to perform the inspection.

  Also, when the pad and probe are brought into contact with each other for wafer inspection, the distance between the wafer and the probe card is increased by raising the probe in order to avoid interference between the wafer holding jig and the probe card accessory device. However, there is a problem that the pitch interval of the probes becomes wider in proportion to the height of the probe.

  Further, the method of forming a probe by an etching process or the like has a problem that it is not easy to form a probe because it is easily affected by disturbance.

In the above-mentioned Patent Documents 1 and 2, a probe card is disclosed in which a thin wire made of tungsten or the like is used as a probe, and a large number of probes are bonded and fixed one by one in accordance with the layout of pads.
The probe of the probe card is formed by machining or manual work, and there is a limit to the number of probes that can be formed.
In addition, since the probe is manually joined to the probe card, the distance between the probe tips (hereinafter referred to as the pitch) is limited to about 40 μm to about 50 μm, and high integration and miniaturization are possible. It has been difficult to cope with the progressing semiconductors and LCD devices (liquid crystal display devices).

  For example, in a QVGA (Quarter Video Graphics Array) size LCD device having a resolution of 320 × 240 pixels, the above-described pad spacing of about 20 μm or less is about to be put into practical use, and the pitch is about 40 μm to about 50 μm. However, this probe card has a problem that the LCD device cannot be inspected.

  The present invention has been made in order to solve the above-described problems, and is a method of manufacturing a microprobe capable of forming high-aspect probes and forming these probes at a narrow pitch, and a manufacturing method thereof. An object of the present invention is to provide a microprobe.

In order to achieve the above object, the present invention provides the following means.
The present invention relates to a method of manufacturing a microprobe having a substrate, a wiring having a predetermined shape formed on the substrate, and a probe made of a predetermined metal formed on the wiring. There is provided a method for manufacturing a microprobe having an electroforming preparation process for forming a predetermined-shaped wiring and an electroforming process for electroforming the probe on the wiring by electroforming.

According to the present invention, in the electroforming process, the probe is formed on the wiring by electroforming. Therefore, the probe has higher toughness than the probe formed by using the etching process of Patent Document 1 described above, and the aspect ratio. High probe can be formed. In addition, since the probe is formed by electroforming, the probe can be easily manufactured without being affected by disturbance.
Further, as compared with the probe in which the thin wire rods of Patent Documents 2 and 3 described above are bundled, probes arranged at a narrower pitch can be formed.

  Since a wiring is formed on the substrate and a probe made of a predetermined metal is formed by electroforming using the wiring, the probe itself has conductivity, and the probe and the wiring are electrically connected. Therefore, a probe capable of measuring electrical characteristics can be manufactured without adding a separate process.

In addition, since the wiring is formed on the substrate and the probe is formed by electroforming using the wiring, the material of the substrate does not affect the probe formation. Therefore, there is no restriction | limiting of the material used for a board | substrate, The material suitable for a use application can be used as a board | substrate.
Since the probe is made of a predetermined metal that can be electroformed, it is a metal that can be electroformed, and a material suitable for the intended use can be used as the probe.

Further, in the above invention, the electroforming preparation step includes a conductive film forming step of forming a conductive film on one surface of the substrate, and a shape forming step of forming the wiring by removing a part of the conductive film It is desirable to have.
According to the present invention, a conductive film is formed on one surface of a substrate, and a part of the conductive film is removed, whereby a wiring having a predetermined shape can be formed on the substrate.

Further, in the above invention, the electroforming preparation step includes a mask forming step of forming a mask in which a wiring forming hole having substantially the same shape as the predetermined shape of wiring, and a conductive film is formed on the mask. It is desirable to have a conductive film forming step to be formed and a mask removing step to remove the mask.
According to the present invention, the mask having the wiring formation holes formed on the substrate is formed, and the conductive layer is formed on the mask, so that the wiring having a predetermined shape can be formed on the substrate. Further, the excess conductive layer formed on the mask is removed together with the mask when the mask is removed.
Since the wiring is formed using the mask in which the wiring formation hole is formed, a plurality of wirings can be formed at the same time.

Furthermore, in the above invention, the electroforming step forms a photoresist layer having an electroformed product forming hole having substantially the same shape as the probe at a position where the probe is formed on the wiring. It is desirable to include a step, a probe forming step of forming a probe by electroforming a predetermined metal in the electroformed product forming hole, and a photoresist layer removing step of removing the photoresist layer.
According to the present invention, since a probe is formed by electroforming a predetermined metal in an electroformed product forming hole formed in a photoresist layer, a probe having a higher aspect ratio can be formed.
Further, for example, by forming a photoresist layer in which a plurality of electroformed product forming holes are formed, a plurality of high aspect ratio probes can be formed simultaneously.

  In the above invention, the electroforming step is a photoresist layer forming step of forming a photoresist layer having an electroformed product forming hole having substantially the same shape and arrangement as the probe on the wiring; It is desirable to have a probe forming step of forming a probe by electroforming a predetermined metal in the electroformed product forming hole and a mold removing step of removing the photoresist layer.

According to the present invention, since a probe is formed by electroforming a predetermined metal in an electroformed product forming hole formed in a photoresist layer, a probe with a higher aspect ratio can be formed.
Further, for example, by forming a photoresist layer in which a plurality of electroformed product forming holes are formed, a plurality of high aspect ratio probes can be formed simultaneously.

In the said invention, it is desirable to have the sharpening process of carrying out the electrolytic polishing of the front-end | tip of the said probe after the said electroforming process.
According to the present invention, since the tip of the probe is sharpened by electropolishing, the tip can be easily sharpened as compared with the probe formed by using the etching process of Patent Document 1 described above.
In other words, various conditions need to be adjusted in order to etch into a shape in which the probe tip is concentrated at one point using an etching process or the like, but the method using electropolishing can be easily sharpened without such a need. .
In addition, the tip can be easily sharpened as compared with the probe using the thin wire rod of Patent Documents 2 and 3 described above, and a plurality of probes can be sharpened simultaneously under the same conditions.

  According to the microprobe manufacturing method of the present invention, the probe is formed on the wiring by electroforming in the electroforming process, so that high aspect probes can be formed and these probes can be formed at a narrow pitch. There is an effect.

[Manufacturing method of microprobe]
A method for manufacturing a microprobe according to an embodiment of the present invention will be described with reference to FIGS.
1 and 2 are process diagrams for explaining an outline of a method of manufacturing a microprobe according to an embodiment of the present invention.

First, as shown in FIG. 1A, a conductive layer 5 is formed on the entire one surface of the substrate 3 (conductive film forming step).
The substrate 3 preferably has insulating properties, and examples thereof include a resin, a semiconductor, and glass. Further, the surface of the substrate having conductivity such as metal may be subjected to insulation treatment. As the conductive layer 5, various conductive metals can be used, and examples thereof include nickel (Ni), aluminum (Al), gold (Au), and copper (Cu).

Next, as illustrated in FIG. 1B, a photoresist layer (mask) 7 </ b> A is formed on the entire surface of the conductive layer 5. Then, a photomask (not shown) on which an electroforming wiring pattern to be described later is formed is disposed on the photoresist layer 7A, and exposure is performed by irradiating ultraviolet rays or the like. The exposed photoresist layer 7A is developed, and as shown in FIG. 1C, wiring formation holes 11 are formed so that the photoresist layer 7A remains only in the region where the electroforming wiring is formed.
After forming the wiring formation hole 11 in the photoresist layer 7A, the conductive layer 5 in the region exposed by the wiring formation hole 11 is etched as shown in FIG. Thereafter, as shown in FIG. 2 (e), by removing the photoresist layer 7A, an electroforming wiring (wiring) 13 is formed (shape forming process, electroforming preparation process).
As described above, the wiring formation hole 11 may be formed by irradiating the photoresist layer 7A with ultraviolet rays or the like and developing it, or by directly drawing on the photoresist layer 7A using an electron beam (EB). The formation hole 11 may be formed.

  As the photoresist, one that is exposed by irradiation with ultraviolet rays, an electron beam, a laser, or the like can be used, and a negative type in which a pattern of a portion irradiated with ultraviolet rays or the like may be used may be used. Alternatively, a positive type in which a portion irradiated with etc. is removed by a later development process may be used. Specifically, SU-8, PMMA (polymethyl polymethacrylate), photosensitive polyimide, cyclized isoprene-based photosensitive resin, novolac-based photosensitive resin, and the like can be exemplified.

FIG. 3 is a perspective view for explaining the configuration of the electroforming wiring of FIG.
As shown in FIG. 3, the electroforming wiring 13 includes a common wiring portion 13 a formed on the substrate 3, an electroformed product forming portion 13 b on which a probe to be described later is formed, a common wiring portion 13 a and an electroformed product formation. It is comprised from the connection part 13c which electrically connects the part 13b.

FIG. 4 is a perspective view for explaining the configuration and arrangement of the electroformed product forming holes of FIG.
After the electroforming wiring 13 is formed, a thick photoresist layer 7B is formed on the substrate 3 and the electroforming wiring 13 as shown in FIG.
Then, a photomask (not shown) on which a probe pattern, which will be described later, is formed is placed on the photoresist layer 7B, and exposure is performed by irradiating ultraviolet rays or the like. The exposed photoresist layer 7B is developed, and as shown in FIGS. 2 (g) and 4, electroformed product forming holes 17 having a probe pattern are formed in the photoresist layer 7B (photoresist layer forming step). ).

The electroformed product forming hole 17 is a hole formed in a substantially cylindrical shape in the photoresist layer 7B, and is formed by exposure / development of the photoresist layer 7B, so that it can be formed as a high aspect ratio hole.
The electroformed product forming hole 17 is formed so that a partial region of the electroformed product forming portion 13 b of the electroformed wiring 13 is exposed.

  In addition, in this embodiment, although demonstrated applying to the electrocasting formation hole 17 formed in the substantially cylindrical shape, the electrocasting formation hole 17 is not restricted to what was formed in the substantially cylindrical shape, and others You may form in the column shape which has various cross-sectional shapes.

  Next, as shown in FIG. 2 (h), an electroformed product (probe 19) is electroformed (electroformed) into the electroformed product forming hole 17 (probe forming step). Specifically, the electroforming wire 13 is electrically connected to the cathode of the DC power source, and the probe 19 is electroformed on the electroformed product forming portion 13 b exposed through the electroformed product forming hole 17. Therefore, the probe 19 is electroformed only on the exposed electroformed product forming portion 13b, and the probe 19 is not electroformed on the other photoresist layer 7B.

FIG. 5 is a perspective view for explaining the configuration and arrangement of the probe shown in FIG.
When the probe 19 is electroformed, the tip of the probe 19 is then polished and its height is made uniform. Then, as shown in FIG. 2I, the photoresist layer 7B is peeled off (photoresist layer removal step), and the formation of the probe 19 is completed (electroforming step).
As a material for forming the probe 19, it is preferable to use a material that can be electroformed. Nickel (Ni), aluminum (Al), gold (Au), copper (Cu), rhodium (Rh), palladium Examples thereof include (Pd) and tungsten (W).

FIG. 6 is a diagram for explaining a probe sharpening step. FIG. 7 is a diagram illustrating electropolishing of the tip of the probe.
Next, a sharpening process for sharpening the tip of the probe 19 is performed.
In the present embodiment, description will be made by applying to the example in which the sharpening process is performed immediately after the process in which the probe 19 is electroformed (electroforming process). Is not particularly limited.

First, as shown in FIG. 6, a photoresist layer 7 </ b> C is formed on the substrate 3. The film thickness of the photoresist layer 7C is desirably such that the tip of the probe 19 protrudes from the photoresist layer 7C.
As described above, the photoresist layer 7C may be formed on the substrate 3, or a resin layer may be formed in place of the photoresist layer 7C. What is necessary is just to be able to protect the upper wiring, the root portion of the probe 19 and the like.

Then, as shown in FIG. 7, electrolytic polishing is performed on the protruding tip portion of the probe 19.
The probe 19 is immersed in a chemical solution such as an acid corresponding to the metal forming the probe 19, and an electric field is applied through a measurement circuit or the like. Then, the electric field concentrates on the ridge line portion 19a between the distal end surface and the side surface of the tip of the probe 19, the ridge line portion 19a is intensively polished, and the distal end portion of the probe 19 is sharpened so as to be concentrated at one point in a substantially conical shape. The

  In addition, the sharpening process may be performed as described above to sharpen the tip of the probe 19, or the sharpening process may not be performed if sharpening is not necessary depending on the intended use.

FIG. 8 is a perspective view illustrating a configuration in which each probe of FIG. 5 is electrically independent.
After the plurality of probes 19 are formed on the substrate 3, as shown in FIG. 8, a part of the common wiring portion 13a of the electroforming wiring 13 is cut, and each probe 19 is electrically independent.
Specifically, as in the steps shown in FIGS. 1B to 1D, a photoresist layer is formed on the substrate 3, and the photoresist is irradiated with ultraviolet rays or the like through the photoresist layer. Expose the layer. Then, the photoresist layer is developed to expose the cut portion of the common wiring portion 13a. The exposed common wiring portion 13a is cut by etching so that each probe is electrically independent. Thereafter, the state shown in FIG. 8 is obtained by removing the photoresist layer.

As described above, the cut portion of the common wiring portion 13a may be exposed by exposing and developing the photoresist layer, or the cut portion of the common wiring portion 13a is exposed by direct drawing with an electron beam (EB). You may let them.
Further, as described above, the common wiring portion 13a may be cut by forming a photoresist layer and subsequent etching, the common wiring portion 13a may be cut by a laser, or common by dicing with a diamond blade or the like. The wiring part 13a may be cut.

Next, each probe 19 is electrically independent, and then a circuit corresponding to the intended use, for example, a measurement circuit is formed on the substrate 3 to complete the microprobe 1.
Specifically, a photoresist layer is formed on the substrate 3, and the photoresist layer is exposed by irradiating ultraviolet rays or the like through a photomask. Then, the photoresist layer is developed to expose the measurement circuit forming portion of the substrate 3. Thereafter, a conductive layer made of an electrically conductive material is formed on the photoresist layer by sputtering or vapor deposition, and the photoresist layer is peeled off to form a measurement circuit.

FIG. 9 is a diagram illustrating a method for forming a measurement circuit using a through hole.
As described above, the measurement circuit 21 may be formed only on the surface of the substrate 3 on which the probe 19 is formed. As shown in FIG. It may be formed on the surface opposite to the surface on which the probe 19 is formed via the through hole 23.
As shown in FIG. 9A, the through hole 23 is formed by forming a through hole. As a formation method thereof, the substrate 3 (silicon) etching using a photolithography process, laser drilling, D- Examples include RIE (Deep Reactive Ion Etching).
As shown in FIG. 9B, a conductive material 25 is embedded in the formed through hole 23, and the measurement circuit formed on one surface of the substrate 3 by the embedded conductive material 25 and on the other surface are embedded. The formed measurement circuit is electrically connected.

According to the above configuration, in the electroforming process, the probe 19 is formed by electroforming in the electroformed product forming hole 17, so that the aspect ratio is higher than that of the probe formed by using the etching process of Patent Document 1 described above. A plurality of probes having a high ratio (for example, probes having a probe diameter to probe height of 1:10) can be formed at the same time and arranged at a narrow pitch.
This is because the electroformed product forming holes 17 are formed by irradiating, developing and exposing the photoresist layer 7B with ultraviolet rays and the like, and a plurality of electroformed product forming holes 17 having a high aspect ratio can be easily formed simultaneously at a narrow pitch. It is because it can arrange | position and form.

  Since the probe 19 is formed by electroforming, the probe 19 can be easily manufactured without being affected by disturbance such as an etching process, and the probe 19 having high toughness can be manufactured.

  Since the electroforming wire 13 is formed on the substrate 3 and the probe 19 made of a predetermined metal is formed by electroforming using the electroforming wire 13, the probe 19 itself has conductivity, and the probe 19 and the electroforming are formed. The wiring 13 is electrically connected. Therefore, the probe 19 capable of measuring the electrical characteristics can be manufactured without adding a separate process.

Further, since the electroforming wiring 13 is formed on the substrate 3 and the probe 19 is formed by electroforming using the electroforming wiring 13, the material of the substrate 3 does not affect the formation of the probe 19. Therefore, the material used for the substrate 3 is not limited, and a material more suitable for the intended use can be used as the substrate 3.
Since the probe 19 is formed from a predetermined metal that can be electroformed, the probe 19 is a metal that can be electroformed and is suitable for the intended use.

Since the tip of the probe 19 is sharpened by electropolishing, the tip can be easily sharpened as compared with the probe formed by using the etching process of Patent Document 1 described above. In other words, various conditions need to be adjusted in order to etch into a shape in which the probe tip is concentrated at one point using an etching process or the like, but the method using electropolishing can be easily sharpened without such a need. .
In addition, the tip can be easily sharpened as compared with the probe using the thin wire rod of Patent Documents 2 and 3 described above, and a plurality of probes can be sharpened simultaneously under the same conditions.

  As described above, the electroforming wiring 13 may be formed by forming the photoresist layer 7A after forming the conductive layer 5 on the substrate 3, and etching the conductive layer 5 exposed by exposure and development. Alternatively, the electroforming wiring 13 may be formed by first forming the photoresist layer 7A on the substrate 3 and forming the conductive layer 5 on the surface of the substrate 3 exposed by exposure and development. At this time, instead of exposing and developing the photoresist layer 7A, the surface of the substrate 3 may be exposed by direct drawing with an electron beam (EB).

[Method of manufacturing microprobe for AFM]
A method for manufacturing an AFM microprobe according to an embodiment of the present invention will be described with reference to FIG.
FIG. 10 is a diagram for explaining the outline of the configuration of the AMF microprobe.
In addition, the same code | symbol is attached | subjected to the component same as the component in the manufacturing method of the above-mentioned microprobe 1, and the description is abbreviate | omitted.

The manufacturing process of the AFM microprobe 101 is the same as the above-described manufacturing process of the microprobe 1 until the process of forming the probe 19 on the substrate 3 and forming the measurement circuit is omitted.
When the measurement circuit is formed on the substrate 3, next, the substrate 3 between the probes 19 is cut to form the AFM microprobe 101 having one probe 19 as shown in FIG. The
Note that the cut substrate 3 acts as a cantilever portion when used as the AFM microprobe 101.

As a method for cutting the substrate 3, etching may be used, dicing may be used, or laser processing may be used, and is not particularly limited.
As described above, the tip of the probe 19 may be sharpened, or the probe 19 may be used in a substantially cylindrical shape when sharpening is not necessary depending on the intended use.

According to the above configuration, since the AFM microprobe 101 including the probe 19 having a high aspect ratio (high from the substrate 3) can be manufactured, the distance between the measurement target and the substrate 3 (cantilever part) is widened. can do.
Therefore, it can prevent that a measuring object receives the influence of the fluid pressed by the cantilever part, and can measure a measuring object correctly.

  Further, since the aspect ratio of the probe 19 is high, when observing a surface shape (measurement target) having a substantially vertical surface, the side surface is substantially the same as the substantially vertical surface as in the case of using a conical probe. It can be prevented that the accurate surface shape cannot be observed by contact.

[Probing Microprobe Manufacturing Method]
A method for manufacturing a probing microprobe according to an embodiment of the present invention will be described with reference to FIGS.
FIG. 11 is a diagram for explaining an outline of the configuration of the probing microprobe.
In addition, the same code | symbol is attached | subjected to the component same as the component in the manufacturing method of the above-mentioned microprobe 1, and the description is abbreviate | omitted.

The manufacturing process of the probing microprobe 201 is the same as the above-described manufacturing process of the microprobe 1 until the process of forming the probe 19 on the substrate 3 and forming the measurement circuit is omitted.
When the measurement circuit is formed on the substrate 3, next, as shown in FIG. 11, a cut 203 is formed in the substrate 3 between the probes 19 to form a cantilever portion 205. The cantilever portion 205 is formed such that the probe 19 is disposed at the tip portion thereof.
The method for forming the cut 203 may be etching, dicing, or laser processing, and is not particularly limited.

Next, the operation of the probing microprobe 201 will be described.
FIG. 12 is a schematic diagram for explaining an inspection of a circuit or the like formed on a wafer using a probing microprobe.
As shown in FIG. 12, the wafer 203 on which a circuit (not shown) including an LSI element or the like to be inspected is formed is electrically connected to another circuit or an attached device, or the circuit For inspection, a pad 205 electrically connected to the circuit is formed.

The probing microprobe 201 is arranged so that the surface on which the probe 19 is formed faces the surface on which the pad 205 of the wafer 203 is formed.
The probe 19 and the pad 205 are directly contacted and electrically connected, and the electrical characteristics of the circuit are inspected via the probing microprobe 201.

12 shows the probing microprobe 201 shown in FIG. 11 in which the cut 203 is not formed. However, the electrical characteristics of the circuit described above can be obtained regardless of whether the cut 203 is formed. It does not affect the inspection.
However, by forming the cantilever portion 205 by making the cut 203, it is possible to absorb variations in the height of the pad 205 from the surface of the wafer 203, and to easily inspect the electrical characteristics of the circuit.

  In FIG. 12, the probing microprobe 201 provided with the substantially cylindrical probe 19 is shown and described, but the probe 19 having a sharpened tip may be used. The tip shape of the probe 19 can be determined based on the size of the pad 205, the arrangement interval, and the like. Specifically, when the probe 19 and the pad 205 are brought into contact with each other, if the probe 19 is not short-circuited to other parts, the probe 19 may remain substantially cylindrical, and if the probe 19 is short-circuited to other parts, the tip Needs to be sharpened to prevent short circuit.

According to said structure, the probe 19 can be arrange | positioned by the narrow pitch of about 10 micrometers to about 20 micrometers by using the high aspect ratio probe 19 for example.
Therefore, for example, inspection can be performed even when the pad spacing is 20 μm or less like a QVGA size LCD device having a resolution of 320 × 240 pixels.
Further, by using the probe 19 having a high height from the substrate 3, the gap between the wafer 203 and the probing microprobe 201 is widened, and a holding jig for the wafer 203, an attachment device for the probing microprobe 201, etc. Interference can be avoided.

It is a process figure explaining the outline of the manufacturing method of the microprobe which concerns on one Embodiment of this invention. It is a process figure explaining the outline of the manufacturing method of the microprobe which concerns on one Embodiment of this invention. It is a perspective view explaining the structure of the wiring for electroforming of FIG.2 (e). It is a perspective view explaining the structure and arrangement | positioning of the hole for electrocasting formation of FIG.2 (g). It is a perspective view explaining the structure and arrangement | positioning of the probe of Fig.2 (i). It is a figure explaining the sharpening process of a probe. It is a figure explaining the electric field polishing of the front-end | tip of a probe. It is a perspective view explaining the structure of the state in which each probe of FIG. 5 was electrically independent. It is a figure explaining the formation method of the circuit for a measurement using a through hole. It is a figure explaining the outline of a structure of the microprobe for AMF which concerns on one Embodiment of this invention. It is a figure explaining the outline of the structure of the microprobe for probing which concerns on one Embodiment of this invention. It is a schematic diagram explaining the test | inspection of the circuit etc. which were formed in the wafer using the microprobe for probing of FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Microprobe 3 Substrate 5 Conductive layer 11 Wiring formation hole 13 Electroforming wiring (wiring)
7A Photoresist layer (mask)
7B Photoresist Layer 17 Electroforming Forming Hole 19 Probe 101 AFM Microprobe 201 Probing Microprobe

Claims (5)

A method of manufacturing a microprobe having a substrate, a wiring having a predetermined shape formed on the substrate, and a probe made of a predetermined metal formed on the wiring,
An electroforming preparation step of forming a predetermined shape of wiring on the substrate;
An electroforming step of electroforming the probe by electroforming on the wiring;
The manufacturing method of the microprobe which has this.   The electroforming preparation step includes a conductive film forming step of forming a conductive film on one surface of the substrate, and a shape forming step of removing the conductive film to form the wiring. The manufacturing method of the microprobe described.   The electroforming preparation step includes a mask formation step of forming a mask having a wiring formation hole having substantially the same shape as the wiring, a conductive film formation step of forming a conductive film on the mask, and removing the mask A method of manufacturing a microprobe according to claim 1, further comprising: a mask removing step.   In the electroforming step, a photoresist layer forming step of forming a photoresist layer having a hole for forming an electroformed product having substantially the same shape as the probe at a position where the probe is formed on the wiring; and forming the electroformed product The microprobe manufacturing method according to any one of claims 1 to 3, further comprising: a probe forming step of forming a probe by electroforming a predetermined metal in a hole for use; and a photoresist layer removing step of removing the photoresist layer. Method.   The method of manufacturing a microprobe according to any one of claims 1 to 4, further comprising a sharpening step of electropolishing the tip of the probe after the electroforming step.

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