JP2002071719A - Probe card and production method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a probe card which enables measuring of electric performance of a semiconductor device having a number of electrodes arranged at a higher density by a fast signal and is made highly practicable with a sufficient stroke and a scrubbing function, and a production method thereof which enables production of the probe card with a higher machining accuracy without reguiring a microscopic assemling work. SOLUTION: The probe card is constituted of a base material 1, a wiring part 2 and an extended wiring part 3. The wiring part 2 is formed in a shape of a cantilever beam. The wiring part 2 is provided with a fixing part 11 for fixing it on a substrate 6, an intermediate part 10a erected from the fixing part 11, a protruded support 10 for supporting a probe 9 following the intermediate part 10a and the probe 9 which is brought into contact with an electrode of a semiconductor device to be measured, thereby allowing the probe 9 to have a sufficient stroke and a scrubbing mechanism.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe card having a plurality of probes for inspecting a semiconductor device or the like, the probe being in contact with a plurality of electrodes provided on the semiconductor device and transmitting an electric signal. More particularly, the present invention relates to a probe card capable of inspecting a semiconductor element having a large number of electrodes integrated at a high density and a manufacturing method capable of accurately manufacturing the probe card.

[0002]

2. Description of the Related Art LSI (Large Scale Integrated Circuit)
Semiconductor elements for it (large-scale integrated circuit) are formed in large numbers on one semiconductor wafer, cut into individual chips, mounted on a wiring board, and used in electrical products and the like. Usually, a large number of electrodes are arranged on the surface of each semiconductor chip along its periphery. In order to industrially produce a large number of such semiconductor elements and efficiently inspect their electrical performance, a connection device having a structure as shown in FIG. 9 is used. This connection device is called a probe card, and is usually a board 2 made of a resin substrate in which wiring is embedded.
3 and a probe 24 made of a metal needle projecting obliquely from the board 23. In the inspection by this connecting device, the probe 24 on the surface of the semiconductor chip is rubbed by the contact pressure utilizing the bending of the probe 24, and the probe 24 is removed by removing the oxide film naturally formed on the surface of the electrode. It is electrically connected to the electrodes and inspects the electrical characteristics of the semiconductor element.

In recent years, however, the density of semiconductor elements has been increasing in terms of mounting, and chip-shaped semiconductor elements having solder or gold bumps on their electrodes have been developed. For this reason, it is becoming difficult to cope with the conventional probe card shown in FIG. That is, since the probe card as shown in FIG. 9 is manufactured by arranging the individual needles, there is a spatial limitation in terms of the thickness of the needles and the positions of the mounting terminals for high density. Further, when the probes are formed at a pitch of about 100 μm or less, it is necessary to arrange the probes in a staggered manner, which causes a problem in characteristics such as a difference in panel load of each probe. Furthermore, since the probe is long, the inductance is large, and there is a limit to inspection using a high-speed signal.

In view of such problems, the following probe card has been proposed as a probe card for performing an operation test on a high-density and narrow-pitch semiconductor element using a high-speed signal. In the connection device described in Japanese Patent Application Laid-Open No. 7-283280, a large number of sharp contact terminals can be formed at high density by means such as thin film formation and etching. To obtain electrical contact with the electrodes. The same applies to the connection device described in Japanese Patent Application Laid-Open No. 8-50146, in which a large number of contact terminals are collectively formed with high precision by using etching and photolithography techniques.

[0005] As another example, Japanese Patent No. 2968051 is disclosed.
And Japanese Patent Publication No. 10-506238 have been proposed. The former is a technique of using a self-supporting spring element formed of a bonding wire or the like as a probe, and the latter is a technique of forming a sharp tip on this.

[0006]

However, these techniques have the following problems. JP-A-7-2
The connection device described in JP-A-83280 does not have a function of moving a needle tip in a lateral direction, so that electrodes of a semiconductor element to be measured are formed of a metal such as aluminum which forms an oxide film on the surface. In such a case, the contact resistance between the probe and the electrode cannot be sufficiently reduced, which may cause measurement failure. In addition, since the stroke of the probe, that is, the restorable pressing height when the probe is pressed is not sufficient, there is a variation in the height of the electrodes of the semiconductor element to be measured, and foreign matter and dust on the semiconductor element. In such a case, a measurement failure occurs or the probe and the semiconductor element are damaged. Also,
Generally, the probe card is used by being attached to a contact device called a prober. However, the accuracy of the attachment is not sufficiently high, and the entire probe card may be inclined or bent. Even in this case, if the individual probes do not have a stroke of, for example, about 10 μm, there is a possibility that contact failure may occur in some of the probes as in the case described above.

In the technique described in JP-A-8-50146, a certain amount of stroke can be secured because the contact is formed at the tip of a laterally extending cantilever (beam). However, even if it is pushed beyond the height of the contact end, the substrate comes into contact with the device to be measured, so that it cannot be said that there is a sufficient stroke. In addition, when the cantilever is formed horizontally in this manner, when the probe is vertically contacted with the electrode of the semiconductor element, the tip of the probe hardly moves in the horizontal direction, and the electrode surface of the device under test is moved. Cannot scrub. That is, there is no scrub function. Therefore, similarly to the probe card described in JP-A-7-283280, there is a possibility that a sufficient contact resistance cannot be obtained.

Since a large number of probes are attached to the probe card so as to surround the semiconductor device to be inspected, the probe card itself is moved in the horizontal direction to cause the probes to scrub the electrode surface of the device under test. If so, a lateral external force will be applied to some of the probes, and these probes will be damaged. Therefore, the scrub function cannot be provided by moving the probe card itself in the horizontal direction.

Further, the techniques described in Japanese Patent Application Laid-Open No. 10-506238 and Japanese Patent No. 2968051 produce spring elements (bonding wires) in which the tip portions of probes having a sharp shape are produced at once and individually produced. This probe has a sufficient stroke and scrub function. However, in this technique, since the tip and the spring element are separately manufactured, miniaturization is limited in terms of the accuracy of each alignment and the thickness of the wire, and a semiconductor element having electrodes arranged at high density Measurement cannot be performed.

The present invention has been made in view of the above problems, and is a probe card capable of measuring the electrical performance of a semiconductor element having a large number of electrodes arranged at high density by a high-speed signal. It is an object of the present invention to provide a probe card having high stroke and scrub functions and high practicality, and a manufacturing method capable of manufacturing the probe card with high processing accuracy without requiring fine assembly work.

[0011]

SUMMARY OF THE INVENTION A probe card according to the present invention is a probe card for inputting and outputting an electric signal by making electrical contact with an object to be inspected. A plurality of cantilever-shaped probes, wiring drawn from the probes, and a base portion for supporting the probes, wherein the probes are fixed to the base portions. And an intermediate part standing from the fixing part, a projection support part following the intermediate part, and a probe provided on the projection support part for contacting an inspection object,
It is characterized by having.

In the present invention, since the probe has the intermediate portion rising from the fixed portion, the probe can have a sufficient stroke, and the mounting accuracy of the probe card can be sufficiently absorbed. Further, when the probe is pressed perpendicularly to the electrode of the semiconductor element to be measured, the probe for contacting with the inspection object moves horizontally by an appropriate distance with an appropriate load to scrub the electrode surface. be able to. Further, since the individual probes can be independently moved, the effects of non-uniformity of the measurement object and dust can be reduced, and a practical probe card can be provided.

A method of manufacturing a probe card according to the present invention is a method of manufacturing a probe card for inputting and outputting an electrical signal by making electrical contact with an object to be inspected, wherein a plurality of probes are provided on a first substrate. Forming a probe, connecting the probe on a second substrate, removing the first substrate from the probe, electrically connecting the probe to the second substrate, and connecting the probe to the second substrate. Forming a probe card on which the probe is disposed on the second substrate, wherein the probe has a fixed portion fixed to the base portion, and an intermediate portion rising from the fixed portion, It is characterized by having a projection support portion following the intermediate portion, and a probe provided on the projection support portion for contacting an inspection object.

The step of forming a probe on the first substrate includes the steps of forming first irregularities for forming the probe on the surface of the first substrate; A step of forming a second irregularity for forming the fixed portion, the intermediate portion and the projection support portion on a surface, a step of forming the probe, and a step of forming the projection support portion;
The method includes a step of forming the intermediate portion and a step of forming the fixing portion, wherein the projection support portion, the intermediate portion, and the fixing portion can be simultaneously formed of the same material.

In the present invention, a large number of probes arranged at a high density can be collectively formed. Therefore, a probe card capable of inspecting a semiconductor element having electrodes arranged at high density can be manufactured with high productivity without requiring a fine assembly process. In addition, since the wiring can be formed at a time, the dimensions of the connection portion and the like can be reduced, and the wiring length can be reduced. For this reason, the inductance of wiring can be reduced,
The high-frequency characteristics are improved, and the measurement of recent high-speed processing devices becomes possible. Further, since the first and second irregularities can be formed in an arbitrary shape, the shape of the probe can be formed arbitrarily, and a probe having a sufficient stroke and scrub function as described above can be formed.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be specifically described below with reference to the accompanying drawings. First, a first embodiment of the present invention will be described. FIG. 1 is a sectional view showing the structure of the probe card of the present embodiment. The probe card according to the present embodiment includes a base part 1, a plurality of wiring parts 2 arranged on the base part 1, that is, probes, and extension wirings 3 connecting the wiring part 2 to the base part 1. Have been. The base part 1 supports a large number of wiring parts 2 (probes),
And the extension wiring 3 to an external tester (not shown). In the base part 1, the wiring board 4
The buffer layer 5 is adhered to one surface of the substrate, and the second substrate 6 to which the wiring portion 2 is fixed is adhered to the surface of the buffer layer 5 opposite to the surface to which the wiring substrate 4 is adhered.

The wiring board 4 supports the buffer layer 5, the substrate 6, the polyimide tape 7, the adhesive 8, and the wiring section 2, and is input / output to / from the semiconductor element to be inspected via the extension wiring 3 and the wiring section 2. This is for conducting an electric signal to an external tester, and is made of, for example, a resin material such as polyimide or glass epoxy, to which the extension wiring 3 is connected.
The internal wiring and the like (not shown) are provided at a position matching the connection position of (1). The buffer layer 5 connects the substrate 6 to the wiring substrate 4 and alleviates the external force applied to the substrate 6.
It is made of an elastic material such as an elastomer, for example, silicon rubber. The substrate 6 is for supporting the polyimide tape 7, the adhesive 8, and the wiring section 2, and can be made of a silicon wafer, ceramic, or the like. In this embodiment, it is made of single-crystal silicon. A polyimide tape 7 and a thermoplastic adhesive 8 are arranged on the surface of the substrate 6 on which the buffer layer 5 is not arranged, and the wiring portion 2 is adhered so as to sandwich the adhesive 8.

In the wiring section 2, there is provided a probe 9 having a sharp shape for contacting the electrode of the semiconductor element to be measured and measuring the electrical performance of the semiconductor element.
Is supported by a projection support portion 10, the projection support portion 10 continues to an intermediate portion 10 a and a fixing portion 11, and the fixing portion 11 is connected to the substrate 6 via a thermoplastic adhesive 8 and a polyimide tape 7 in the base material portion 1. Adhered and fixed to. Middle part 1
Reference numeral 0a stands from the fixed portion 11, and floats the projection support portion 10 and the probe 9 following the intermediate portion 10a from the surface of the substrate 6, thereby giving the probe 9 a sufficient stroke. Further, by having such a shape, the probe 9 is provided with a scrub function.

Further, the polyimide tape 7, the adhesive 8, and the fixing portion 11 have a portion mounted on the substrate 6 and a portion protruding from the substrate 6, and the latter is smoothly curved and the end is a wiring. It is fixed to the substrate 4. The wiring section 2 at this end is connected to an extension wiring 3, and the extension wiring 3 is connected to a connection terminal (not shown) provided on the surface of the wiring board 4.

The extension wiring 3 is formed to connect the wiring part 2 to the base part 1 and can be formed using wire bonding or an insulating film with wiring. In this embodiment, the extension wiring 3 is used. Reference numeral 3 is formed by wire bonding.

In the present embodiment, the projection supporting portion 10, the intermediate portion 10a and the fixing portion 11 of the wiring portion 2 are an integrated structure and are made of a gold alloy. As described above, the fixing portion 11 is fixed to the substrate 6, but the intermediate portion 1 is fixed.
0a stands up from the fixing portion 11, so that the projection supporting portion 1
0 is away from the substrate 6. The distance between the projection supporting portion 10 and the substrate 6 is the stroke of the probe 9 and the projection supporting portion 10, that is, the restorable movement distance when the probe 9 is pressed.

As described above, the probe card is
The probe 9 should be approximately 10
It is desirable to have a stroke of μm or more,
In the present embodiment, the distance between the substrate 6 and the projection support 10 is about 30 μm. When the probe card is moved up and down due to the positional relationship between the probe 9 and the fixed portion 11, the probe 9
Determines the amount of scrub for horizontal scrubbing of the electrodes of the semiconductor element. In the present embodiment, by displacing the position of the fixing portion 11 in the horizontal direction by 150 μm from the probe 9 and ignoring the deflection in the middle, the scrubbing amount (horizontal movement of the tip) when the probe 9 is pushed in by 10 μm is It can be calculated as follows.

That is, assuming a straight line connecting the fixed portion 11 and the tip of the probe 9, the inclination of this straight line is sin ^-1 (30
/ 150) = 11 °. When the probe 9 is pushed in by 10 μm, the inclination becomes 7 °. Therefore, the probe 9 is set to 10 μ
m, the amount of movement of the probe 9 in the horizontal direction, that is, the amount of scrub, is 150 μm × ｛cos (7 °) −cos (1
1 °)｝ = 1.6 μm, which has a sufficient removing effect on an oxide film having a thickness of several nm. Further, the probe 9 is set to 10 μm
When pushed in, the load applied to the wiring portion 2 is about 6 g, assuming that the wiring thickness and width of the projection supporting portion 10 are each 30 μm, since the Young's modulus of gold is 7.8E + 10 Pa. This value is approximately 10 which is the load of a commonly used probe.
The value is close to g, indicating that the film has a sufficient oxide film removing ability in combination with the scrub amount.

On the other hand, when the wiring portion 2 does not have the upright intermediate portion 10a and when it is not held at an appropriate distance, the probe 9 does not perform a sufficient scrub function.
When the wiring portion 2 does not have the upright intermediate portion 10a, for example, in the case of a horizontal beam structure like the probe described in JP-A-8-50146, a structure other than the intermediate portion 10a in the probe card is used. Even if it is the same as the probe card of the first embodiment, it is difficult to make the pushing amount itself as large as 10 μm due to the possibility of contact with the substrate 6. Even if it is pushed in by 10 μm, the inclination of the wiring portion at that time is sin ⁻¹ (10/150) = 3.
Since it is 8 °, the amount of scrub is 150 μm × cos
(3.8 °) = 0.3 μm, which is smaller than the size of the contact portion (approximately several μm in diameter) between the probe 9 and the electrode to be inspected, and a sufficient value cannot be secured. Also, if the length of the beam is shortened to increase the amount of scrub, problems such as excessive load and damage to the semiconductor element to be measured occur, so that the probe card is designed to have an appropriate structure. The degree of freedom is greatly impaired. In addition, the said dimension is only an example, and does not restrict | limit the structure of this invention, even if it serves as a guide of the whole structure design.

Next, a method of manufacturing the probe card according to the present embodiment will be described. 2 (a) to 2 (d), 3 (a) to 3 (d), and FIG. 4 are cross-sectional views showing a method of manufacturing a probe card in this embodiment in the order of steps.

First, the silicon substrate is replaced with the sacrificial substrate 12 (first
And a concave portion for forming the probe 9, the projection support portion 10 and the intermediate portion 10a in the future. Such a concave portion can be easily formed by using a single crystal (100) silicon substrate as the sacrificial substrate 12 and performing anisotropic etching with a chemical solution using an oxide film as a mask.

Specifically, first, as shown in FIG. 2A, a thermal oxide film 13, which is a silicon dioxide film having a thickness of 0.1 μm, is formed on the surface of the sacrificial substrate 12, and projections are formed by photolithography. A resist pattern (not shown) having an opening in a region where the support portion 10 and the intermediate portion 10a are to be formed is formed, a pattern of a thermal oxide film is formed by etching with buffered hydrofluoric acid, and then TMAH
A recess 14 (second unevenness) for forming the projection supporting portion 10 and the intermediate portion 10a is obtained on the surface of the sacrificial substrate 12 by silicon etching with (tetramethylammonium). At this time, if TMAH adjusted to a temperature of 90 ° C. and a concentration of 26% is used, an etching rate of about 1 μm / min can be obtained. When the single crystal silicon substrate is etched by TMAH, since the etching rate varies depending on the crystal orientation, the (111) plane finally appears, and the angle of the side wall 14a of the concave portion 14 becomes about 54 °.

Thereafter, as shown in FIG.
In the same manner as the method in which the probe 4 is formed, a recess 15 (first unevenness) for forming the probe 9 is formed in a region of the recess 14 where the probe 9 is to be formed.

In this embodiment, an example has been shown in which the recesses 14 and 15 are formed by anisotropic etching with TMAH. In addition, the recesses 14 and 15 are formed by combining dry etching and isotropic etching with a chemical solution. The angle and shape of the side wall can be freely set. In this case, the order of forming the concave portions 14 and the concave portions 15 can be freely changed. For example,
The above-described TMAH is used to form the concave portion 15 and the concave portion 14 is formed.
Can be formed by etching with SF6 plasma. In this embodiment, single-crystal silicon is used as the sacrificial substrate 12.
Is not limited to single crystal silicon. For example, a glass or metal plate can be used. Also in this case, the concave portion can be formed by the dry etching and the etching with the chemical solution.

Next, as shown in FIG.
And the entire surface of the sacrificial substrate 12 on which the recess 15 is formed,
A thermal oxide film such as a silicon dioxide film is formed as a sacrificial layer 16 for facilitating the transfer when the wiring portion 2 is transferred in a later step. However, when a glass or metal plate is used for the sacrificial substrate 12, the sacrificial layer 16 is not always necessary.

Next, a hard material is deposited in the recess 15 to form the probe 9. In this embodiment, a tungsten film is used as the hard film. The tungsten film is formed by a sputtering method, and a pattern of the tungsten film is formed by dry etching with plasma of sulfur hexafluoride using a mask (not shown) formed by photolithography. The hard material is not limited to tungsten (W), and various materials such as DLC (diamond-like carbon), NiP film, palladium, and beryllium copper can be selected. In addition, if a hard material such as a nickel alloy is selected as the material of the entire wiring portion 2, it is not necessary to form the hard film only on the tip portion in particular, and even if this step itself is omitted, the overall function is impaired. Not something.

Next, as shown in FIG. 2D, Au is formed by a DC magnetron sputtering method as a seed layer 17 of a plating film for forming the projection supporting portion 10, the intermediate portion 10a and the fixing portion 11. Deposited to 0.1 μm,
A pattern using the photoresist 18 is formed by photolithography. At this time, in order to reduce the wiring resistance, the projection support portion 10, the intermediate portion 10a, and the fixing portion 11 need to have a certain thickness, so that the photoresist 18
Also needs to be formed in a thick film. In the present embodiment, a photoresist 18 having a thickness of about 50 μm is formed, and a pattern having an opening 18a in a region where the projection supporting portion 10, the intermediate portion 10a and the fixing portion 11 are to be formed is formed by exposure and development. I do.

Next, as shown in FIG. 3 (a), the opening support 1, the intermediate portion 10 a and the fixing portion 11
A film of Au is formed to a thickness of 30 μm on the sacrificial substrate 12 by electroplating to form a probe 9, a protrusion supporting portion 10, an intermediate portion 10 a and a fixing portion 11. This electrolytic plating is performed using a non-cyan plating solution under the conditions of a current density of 5 mA / cm ² and a liquid temperature of 50 ° C. At this time, the effect is the same even if film formation is performed by electroless plating instead of electrolytic plating. Also, the projection support portion 1
As the material of the intermediate portion 10a and the fixing portion 11, various materials such as a nickel alloy and a copper alloy other than gold and a gold alloy can be selected. Next, the photoresist 18 is removed by immersing the plated sacrificial substrate 12 in an organic solvent such as acetone. The seed layer 17 remaining in portions other than the wiring is removed by performing a short-time plasma etching process on the entire substrate.

Next, as shown in FIGS. 3B and 3C, the wiring portion 2 formed on the sacrificial substrate 12 in the above process, ie, the probe 9, the projection support portion 10, the intermediate portion 10a, and the fixing portion 11 is bonded and transferred to the substrate 6 (second substrate). In this embodiment, a single crystal silicon substrate is also used as the substrate 6, and a substrate provided with a polyimide tape 7 and a thermoplastic adhesive 8 on the surface of the substrate 6 to which the wiring portion 2 is adhered is used. First, as shown in FIG. 3B, the wiring section 2 is bonded to the substrate 6 via the polyimide tape 7 and the adhesive 8.

Next, as shown in FIG. 3C, the sacrifice substrate 12 is immersed in an etching solution together with the substrate 6, and the sacrifice layer 16 is dissolved to peel off the wiring portion 2 from the sacrifice substrate 12.
The transfer to the substrate 6 is completed. At this time, the projection support portion 1
In order to prevent the adhesive 8 from flowing into the space between the substrate 0 and the substrate 6, it is effective to form a pattern (not shown) of, for example, a photoresist in this space in advance. After the bonding, the resist can be selectively removed with an organic solvent or the like, so that the space giving the stroke of the contact end can be formed with high precision. In this embodiment, since a silicon dioxide film is used as the sacrifice layer 16, the sacrifice substrate 12 and the wiring portion 2 are immersed and etched in a 1: 7 mixed solution of hydrofluoric acid and ammonium fluoride. Also,
Dissolving time can be shortened by applying ultrasonic waves to the etching solution.

Next, as shown in FIG. 3D, the substrate 6 is cut in the vicinity of the portion where the fixing portion 11 is adhered, and the portion of the substrate 6 corresponding to the portion immediately above the probe 9 and the projection support portion 10 is cut. Then, a part other than a part of the part to which the fixing part 11 is adhered is removed.

Next, as shown in FIG. 4, a buffer layer 5 made of silicon rubber is bonded to the surface of the substrate 6 on which the wiring section 2 is not bonded, and the buffer layer 5 is bonded to the wiring board 4. I do. Then, at the cut end of the substrate 6,
The fixing portion 11, the adhesive 8 and the polyimide tape 7 are smoothly bent and adhered to the wiring board 4. At this time, the silicon rubber can be made to function as a buffer layer between the wiring board 4 and the board 6 by sandwiching and integrating the silicone rubber between the wiring board 4 and the board 6. The board 6 and the wiring board 4
In bonding with the silicone rubber, an adhesive is unnecessary because the silicone rubber itself has an adhesive force, but the bonding may be performed using an adhesive. In this embodiment, the buffer layer 5 includes, for example,
Silicon rubber having a thickness of 0.2 to 3 mm and a hardness (JISA) of about 15 to 70 is used. However, the material constituting the buffer layer 5 is not limited to silicon rubber, but may be an organic film that can serve as a buffer, a spring made of a metal material,
A leaf spring or the like may be used. After that, the extension wiring 3 is connected to the end of the fixed part 11, and the extension wiring 3 is connected on the wiring board 4. Thereby, a probe card as shown in FIG. 4 can be formed.

As described above, according to the manufacturing method of the present embodiment, the preliminary manufacturing process using the sacrificial substrate 12 is performed, so that the pitch of the electrode pads of the semiconductor element to be inspected is about 10 μm. A probe that can be connected to each electrode pad of a semiconductor element and has a probe having a sufficient stroke and a scrubbing function can be easily formed, and a high-performance probe card for practical use can be manufactured with high yield.

Next, a modification of the first embodiment will be described. FIG. 5 is a cross-sectional view illustrating the structure of a probe card according to the present modification. In the first embodiment, an example in which wire bonding is used for the extension wiring 3 has been described. In the present modification, an example in which a wiring insulating film 3a is used for the extension wiring 3 will be described. As shown in FIG. 5, in the present modification, an insulating film 3a with wiring is used for the extension wiring 3, and the insulating film 3a with wiring is formed by the insulating film 3b and the wiring 3c provided in the insulating film 3b. It is configured. Further, the insulating film with wiring 3a can be integrated with the polyimide tape 7 supporting the wiring portion 2. In this case, the wiring-attached insulating film 3a is bent to exceed the step between the base portion 1 and the wiring portion 2, and the wiring-attached insulating film 3a is bent.
Connection between the wiring board 4 and the insulating film 3a with wiring and the fixing portion 11 of the wiring section 2 can be made by solder 3d or bumps. In this case, the wiring section 2 does not need to be bent.

Next, a second embodiment of the present invention will be described. 6A to 6E and FIG. 7 are cross-sectional views showing a method of manufacturing a probe card according to the present embodiment in the order of steps. In the present embodiment, an inclined surface for forming the projection supporting portion 10 on the sacrificial substrate 12 is formed on the sacrificial substrate 1.
2 by etching the photoresist, not by etching. Hereinafter, a specific description will be given.

First, a region where the probe 9 is to be formed on the surface of the sacrificial substrate 12 is formed by a method similar to the method shown in FIG. 2B, that is, a method such as silicon etching using TMAH (tetramethylammonium). Recess 15 in
To form At this time, the concave portion 14 is not formed.

Next, by the same method as that shown in FIG. 2C, when the wiring portion 2 is transferred in a later step over the entire surface of the sacrificial substrate 12 in which the concave portion 15 is formed, the transfer is facilitated. A thermal oxide film (silicon dioxide film) is formed. Next, a hard material such as W is deposited in the recess 15 to form the probe 9.

Thereafter, as shown in FIG. 6A, a pattern is formed by the photoresist 21 and heat treatment is performed.
Since the photoresist 21 is easily softened and shrunk by the heat of about 100 to 180 ° C., a smooth slope can be freely obtained by selecting a temperature condition.

Next, FIG. 2D and FIGS. 3A and 3B
The projection support portion 10, the intermediate portion 10a, and the fixing portion 11 are formed by a method similar to the method shown in FIG. That is, FIG.
As shown in FIG. 1B, a seed layer 1 of a plating film for forming the projection support portion 10, the intermediate portion 10a and the fixing portion 11 is formed.
7 as A by DC magnetron sputtering
u is formed to a thickness of 0.1 μm.

Next, as shown in FIG. 6C, a photoresist 18 having a thickness of about 50 μm is formed by photolithography.
Is formed, and a pattern having an opening 18a in a region where the projection support portion 10, the intermediate portion 10a and the fixing portion 11 are to be formed is formed by exposure and development.

Next, as shown in FIG. 6D, the opening support 1, the intermediate support 10 a and the fixing unit 11
A film of Au is formed to a thickness of 30 μm on the sacrificial substrate 12 by electroplating to form a probe 9, a protrusion supporting portion 10, an intermediate portion 10 a and a fixing portion 11.

Next, as shown in FIG. 6E, the photoresist 18 is removed by immersing the sacrificial substrate 12 after electrolytic plating in an organic solvent such as acetone. Wiring unit 2
The seed layer 17 remaining in the other portions is removed by performing a short-time plasma etching process on the entire surface of the sacrificial substrate 12.

Next, as shown in FIG. 7, the wiring portion 2 formed on the sacrificial substrate 12, ie, the probe 9, the projection support portion 10,
The intermediate portion 10a and the fixing portion 11 are bonded to a substrate 6 provided with a polyimide tape 7 and an adhesive 8 on the surface. next,
The wiring portion 2 formed on the sacrifice substrate 12 is immersed in an etching solution together with the substrate 6, and the sacrifice layer 16 is dissolved, whereby the wiring portion 2 is separated from the sacrifice substrate 12 and transferred to the substrate 6. At this time, in the present embodiment, unlike the first embodiment, in order to remove both the silicon dioxide film (sacrifice layer 16) and the photoresist 18, the substrate is immersed in an organic solvent and buffered hydrofluoric acid in this order. One of the effects of this embodiment is that the photoresist 18 has a large thickness, so that the penetration of the organic solvent is completed in a short time, and thereafter, the buffered hydrofluoric acid for dissolving the sacrificial layer 16 is also removed from the photoresist 18.
Can be permeated in a short time after the removal of the sacrifice, and as a result, the separation time between the sacrifice substrate 12 and the wiring portion 2 can be reduced as compared with the first embodiment.

Thereafter, the board 6 is mounted on the wiring board 4 by the same method as shown in FIGS. 3D and 4.
That is, the substrate 6 is cut in the vicinity of the portion where the fixing portion 11 is bonded, and a portion of the substrate 6 which is directly above the probe 9 and the protrusion supporting portion 10 and a portion other than a portion of the portion where the fixing portion 11 is bonded. Remove the part. Next, the substrate 6 is bonded to the wiring substrate 4 via the buffer layer 5 made of silicon rubber. After that, at the cut end of the substrate 6, the fixing portion 11, the adhesive 8 and the polyimide tape 7 are smoothly bent and adhered to the wiring substrate 4. After that, the extension wiring 3 is connected to the end of the fixed part 11, and the extension wiring 3 is connected on the wiring board 4. Thereby, a probe card as shown in FIG. 7 can be formed.

Next, a third embodiment of the present invention will be described. 8A to 8D are cross-sectional views illustrating a method of manufacturing the probe card according to the present embodiment in the order of steps. First, a sample shown in FIG. 2C is formed by a method similar to the method shown in FIGS. 2A to 2C.

Thereafter, as shown in FIG. 8A, the projection supporting portion 10b, the intermediate portion 10c and the fixing portion 11 are placed on the sample.
A conductive thin film 19 for forming a is formed. In this embodiment, nickel is formed to a thickness of 5 μm by plating. In the present embodiment, the length of the wiring can be reduced as described later, so that the thickness of the conductive thin film 19 can be reduced. Therefore, the conductive thin film 19 can be easily formed not only by plating but also by sputtering and etching. Since there is a degree of freedom in the forming method, as a material for forming the conductive thin film 19,
Various materials such as gold, nickel, copper, beryllium copper and palladium can be selected.

After that, as shown in FIG. 8B, the conductive thin film 19 other than the portion where the projection support portion 10b, the intermediate portion 10c and the fixing portion 11a are formed is removed, so that the probe 9, the projection support portion 10b , Intermediate part 10c and fixing part 11a
Is formed. After that, the seed layer 17 is formed. Next, the opening 22 is
A photoresist 22 having a is formed.

Next, as shown in FIG.
The bumps 20 are formed by depositing a gold alloy on 2a by plating. After that, the photoresist 22 is removed, and the seed layer 17 is etched.

Thereafter, the wiring portion 2a is connected to the wiring substrate 4 via the bump 20 by the method shown in FIGS. 3 (b) and 3 (c).
To the wiring portion 2 by dissolving the sacrificial layer 16.
a, the wiring portion 2a and the bump 2
0 is transferred to the wiring board 4. At this time, heat treatment or the like is performed as necessary in order to improve the electrical connection between the bumps 20 and the wiring board 4.

Next, as shown in FIG. 8D, the surface of the wiring board 4 to which the pump 20 is connected and the bump 2
The protective layer 25 is formed so as to cover 0. The protection layer 25 is for protecting the bumps 20 and the wiring portions 2 and is made of, for example, a thermoplastic resin.

In this embodiment, by connecting the wiring section 2 directly to the wiring board 4 as described above, the entire wiring length can be shortened. For this reason, the intermediate steps can be simplified as described above, and the degree of freedom in designing the material constituting each part of the probe card and the thickness of the wiring increases, so that a more appropriate material configuration and structure are selected in the formation of the probe card. can do. Further, since the wiring length is short, the inductance of the wiring is reduced, and the high frequency characteristics can be greatly improved.

[0057]

As described in detail above, according to the present invention,
The probe is a wire having a single beam shape, a fixed portion fixed to the substrate to the wire, an intermediate portion rising from the fixed portion, a projection support portion following the intermediate portion, and a probe contacting the inspection object. By providing the above, a sufficient stroke can be given to the probe. Further, since the probe can move in the horizontal direction while applying an appropriate load only by the probe being in vertical contact with the electrode of the semiconductor element, a sufficient scrub function can be imparted to the probe. For this reason, damage to the inspection target is small and stable contactability can be obtained.

Further, according to the manufacturing method of the present invention, since a large number of probes can be simultaneously formed at high density by using the sacrificial substrate, a practical high-performance probe card having a sufficient stroke and scrubbing function can be obtained. It can be manufactured without requiring fine assembly work. Also, since the size of the wiring can be reduced, the inductance of the circuit is reduced,
High frequency characteristics can be improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a structure of a probe card according to a first embodiment of the present invention.

FIGS. 2A to 2D are cross-sectional views illustrating a method of manufacturing a probe card in the present embodiment in the order of steps.

3 (a) to 3 (d) are cross-sectional views showing steps subsequent to FIG. 2 in the method of manufacturing a probe card in the present embodiment in the order of steps.

FIG. 4 is a cross-sectional view showing a step subsequent to FIG. 3 in the method of manufacturing the probe card in the present embodiment in the order of steps.

FIG. 5 is a cross-sectional view illustrating a structure of a probe card according to a modification of the embodiment.

FIGS. 6A to 6E are cross-sectional views illustrating a method of manufacturing a probe card according to a second embodiment of the present invention in the order of steps.

FIG. 7 is a cross-sectional view showing a step subsequent to FIG. 6 in the probe card manufacturing method according to the present embodiment in the order of steps.

FIGS. 8A to 8D are cross-sectional views illustrating a method of manufacturing a probe card according to a third embodiment of the present invention in the order of steps.

FIG. 9 is a cross-sectional view showing the structure of a conventional probe card.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1; Base part 2; Wiring part 3; Extension wiring 3a; Insulating film with wiring 3b; Insulating film 3c; Wiring 3d; Solder 4: Wiring board 5; Buffer layer 6; Probe 10, 10b; Protrusion support portion 10a; Intermediate portion 11, 11a; Fixed portion 12, 13a; Sacrifice substrate 13; Thermal oxide film 14; Depression 15; Depression 16; Sacrifice layer 17; Opening 19 of resist 18; conductive thin film 20; bumps 21 and 22; photoresist 22a; opening 20 of photoresist 22; bump 23; board 24; probe 25;

 ──────────────────────────────────────────────────の Continuing on the front page (72) Inventor Hirofumi Goto 1-5-5 Takatsukadai, Nishi-ku, Kobe City, Hyogo Prefecture Inside Kobe Research Institute, Kobe Steel Ltd. (72) Inventor Koji Yoneda Takatsuka, Nishi-ku, Kobe City, Hyogo Prefecture Kobe Steel Co., Ltd. Kobe Institute of Technology, Kobe Steel Ltd. (72) Inventor Songo 1-5-5 Takatsukadai, Nishi-ku, Kobe City, Hyogo Prefecture Kobe Steel Co., Ltd. Kobe Research Institute F-term (Reference) 2G003 AA07 AE03 AG03 AG12 AH05 2G011 AA17 AA21 AB08 AC14 AC32 AE03 AF07 4M106 AA02 AD23 AD26 BA01 BA14 CA01 DD04 DD10 DD15

Claims (13)

[Claims] 1. A probe card for making electrical contact with an object to be inspected and inputting / outputting an electric signal, comprising: a plurality of cantilever-shaped probes for electrically contacting the object to be inspected; Wiring pulled out from the probe, and a base portion for supporting the probe, the probe, a fixed portion fixed to the base portion, and an intermediate portion rising from the fixed portion, A probe card, comprising: a projection support portion following the intermediate portion; and a probe provided on the projection support portion for contacting an inspection object. 2. The probe card according to claim 1, wherein the fixing portion is fixed to the base member with a resin material. 3. The probe card according to claim 1, wherein the fixing unit is electrically connected to the base unit by a metal wiring. 4. The fixing device according to claim 1, wherein the fixing unit is electrically connected to the base unit by a metal bump.
Or the probe card according to 2. 5. The probe card according to claim 1, wherein the base member has a buffer layer. 6. A method for manufacturing a probe card for inputting / outputting an electrical signal by making electrical contact with an object to be inspected,
Forming a plurality of probes on a first substrate; connecting the probes to a second substrate; removing the first substrate from the probes; Forming a probe card in which the probes are electrically connected to the substrate and the probes are arranged on the second substrate, wherein the probes are fixed to the base member, An intermediate portion standing from the fixed portion,
A method for manufacturing a probe card, comprising: a projection support portion following the intermediate portion; and a probe provided on the projection support portion for contacting an inspection object. 7. The step of forming a probe on the first substrate includes forming first irregularities for forming the probe on the surface of the first substrate, and forming the probe on the surface of the first substrate. A step of forming second irregularities for forming the fixed part, the intermediate part, and the projection support part on a surface; a step of forming the probe; a step of forming the projection support part; 7. The method according to claim 6, further comprising: forming the fixing portion, and forming the protrusion supporting portion, the intermediate portion, and the fixing portion at the same time using the same material. Method of manufacturing probe card. 8. The method according to claim 6, wherein the first substrate is made of single crystal silicon. 9. The method of manufacturing a probe card according to claim 6, wherein the step of forming the first unevenness is performed by anisotropic etching using a chemical. 10. The method of manufacturing a probe card according to claim 6, wherein the step of forming the second unevenness is performed by anisotropic etching using a chemical solution. 11. The method for manufacturing a probe card according to claim 6, wherein the step of forming the second unevenness is performed by using a photosensitive resin material. . 12. The method according to claim 6, further comprising a step of forming a silicon oxide thin film on the first substrate before the step of forming a probe on the first substrate. 2. The method for manufacturing a probe card according to claim 1. 13. The method according to claim 6, wherein the step of connecting the probe on the second substrate is performed by bonding the fixing portion to the second substrate with an adhesive. 2. The method for manufacturing a probe card according to claim 1.