JP2006222215A - 相変化メモリ装置 - Google Patents
相変化メモリ装置 Download PDFInfo
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- JP2006222215A JP2006222215A JP2005033271A JP2005033271A JP2006222215A JP 2006222215 A JP2006222215 A JP 2006222215A JP 2005033271 A JP2005033271 A JP 2005033271A JP 2005033271 A JP2005033271 A JP 2005033271A JP 2006222215 A JP2006222215 A JP 2006222215A
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- change memory
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- memory device
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- 230000008859 change Effects 0.000 title claims abstract description 130
- 230000015654 memory Effects 0.000 claims abstract description 96
- 239000004065 semiconductor Substances 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000009792 diffusion process Methods 0.000 claims abstract description 12
- 239000011159 matrix material Substances 0.000 claims abstract description 4
- 239000012782 phase change material Substances 0.000 claims description 12
- 150000004770 chalcogenides Chemical class 0.000 abstract description 15
- 230000010354 integration Effects 0.000 abstract description 6
- 238000000034 method Methods 0.000 description 40
- 239000010410 layer Substances 0.000 description 31
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 25
- 229910052721 tungsten Inorganic materials 0.000 description 25
- 239000010937 tungsten Substances 0.000 description 25
- 238000010586 diagram Methods 0.000 description 21
- 238000004519 manufacturing process Methods 0.000 description 19
- 239000011229 interlayer Substances 0.000 description 14
- 230000004913 activation Effects 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 12
- 230000004048 modification Effects 0.000 description 11
- 238000012986 modification Methods 0.000 description 11
- 230000008569 process Effects 0.000 description 11
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 229910052814 silicon oxide Inorganic materials 0.000 description 9
- 239000012535 impurity Substances 0.000 description 8
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 7
- 238000000206 photolithography Methods 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000020169 heat generation Effects 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 125000006850 spacer group Chemical group 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910008482 TiSiN Inorganic materials 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- QRXWMOHMRWLFEY-UHFFFAOYSA-N isoniazide Chemical compound NNC(=O)C1=CC=NC=C1 QRXWMOHMRWLFEY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- -1 silicide nitride Chemical class 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- 229910052714 tellurium Inorganic materials 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/003—Cell access
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/78—Array wherein the memory cells of a group share an access device, all the memory cells of the group having a common electrode and the access device being not part of a word line or a bit line driver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Memories (AREA)
Abstract
【解決手段】 本発明の相変化メモリ装置は、半導体基板10上にマトリクス状に配列された複数のワード線と複数のビット線の各交点にMOSトランジスタを設け、カルコゲナイド膜24においてMOSトランジスタの拡散層の上部に対向する領域に所定数のビット情報を記憶保持する所定数の相変化メモリ素子を形成し、その所定数の相変化メモリ素子の各々を電気的に接続するための下部電極構造としてプラグ28a、下部電極プレート28b、下部電極プラグ33aを形成し、素子選択線としての上部電極膜35からMOSトランジスタを経由した電流を相変化メモリ素子に流してビット情報の書込みを行う。
【選択図】 図17
Description
11…n型ウエル
12、13…p型ウエル
14…浅溝
15…素子分離領域
16…ゲート絶縁膜
17…多結晶シリコン膜
18…タングステン膜
19…ゲート電極
20…キャップ絶縁膜
21…不純物領域
22…シリコン窒化膜側壁
23…層間絶縁膜
24…ビット線コンタクト
25…タングステン膜
26…層間絶縁膜
27…下部電極プレートコンタクト
28a…プラグ
28b…下部電極プレート
29…層間絶縁膜
30…ハードマスク
31…サイドウォールスペーサ
32、32a…下部電極コンタクト
33…タングステン膜
33a…下部電極プラグ
34…カルコゲナイド膜
35…上部電極膜
36…層間絶縁膜
37…接続孔
38…第2層配線
Claims (9)
- 半導体基板上に相変化材料を用いて形成された相変化メモリ装置であって、
マトリクス状に配列された複数のワード線と複数のビット線の各交点にそれぞれ設けられた一のMOSトランジスタと、
前記相変化材料を堆積した相変化層において前記一のMOSトランジスタの拡散層の上部に対向する領域に形成され、所定数のビット情報を記憶保持する所定数の相変化メモリ素子と、
前記一のMOSトランジスタの拡散層に前記所定数の相変化メモリ素子の各々を電気的に接続するための下部電極構造と、
を備えることを特徴とする相変化メモリ装置。 - 前記下部電極構造は、前記所定数の相変化メモリ素子に対向配置される一の共通プレートと、前記一のMOSトランジスタの拡散層と前記一の共通プレートを接続する一以上の第1のプラグと、前記一の共通プレートと前記所定数の相変化メモリ素子の各々を接続する少なくとも所定数の第2のプラグを含むことを特徴とする請求項1に記載の相変化メモリ装置。
- 前記相変化メモリ素子は、それぞれ対応する前記第2のプラグにおける電流供給時の発熱により、低抵抗の結晶状態と高抵抗のアモルファス状態の間を遷移してビット情報を書き換え可能であることを特徴とする請求項2に記載の相変化メモリ装置。
- 前記少なくとも所定数の第2のプラグは、前記一のMOSトランジスタのゲート幅方向に沿って配置されることを特徴とする請求項2又は3に記載の相変化メモリ装置。
- 前記少なくとも所定数の第2のプラグは、前記ゲート幅方向で隣接する相変化メモリ同士が互いにゲート長方向のオフセットを持つように配置されることを特徴とする請求項4に記載の相変化メモリ装置。
- 前記所定数の相変化メモリ素子の各々に対して個別に電流を供給するための所定数の素子選択線を含む上部電極構造を備えることを特徴とする請求項1から5のいずれかに記載の相変化メモリ装置。
- 前記素子選択線の延伸方向は、前記半導体基板上において前記ビット線の延伸方向と平行に配置されることを特徴とする請求項6に記載の相変化メモリ装置。
- 前記上部電極構造が多階層に積層されることを特徴とする請求項1から7のいずれかに記載の相変化メモリ装置。
- 前記上部電極構造に加えて、前記下部電極構造が多階層に積層されることを特徴とする請求項8に記載の相変化メモリ装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005033271A JP4591821B2 (ja) | 2005-02-09 | 2005-02-09 | 半導体装置 |
US11/349,959 US7675770B2 (en) | 2005-02-09 | 2006-02-09 | Phase change memory device |
CNB2006100064780A CN100452418C (zh) | 2005-02-09 | 2006-02-09 | 相变存储器装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005033271A JP4591821B2 (ja) | 2005-02-09 | 2005-02-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006222215A true JP2006222215A (ja) | 2006-08-24 |
JP4591821B2 JP4591821B2 (ja) | 2010-12-01 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005033271A Active JP4591821B2 (ja) | 2005-02-09 | 2005-02-09 | 半導体装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7675770B2 (ja) |
JP (1) | JP4591821B2 (ja) |
CN (1) | CN100452418C (ja) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008300820A (ja) * | 2007-05-31 | 2008-12-11 | Ind Technol Res Inst | 相変化メモリ装置とその製造方法 |
JP2009021602A (ja) * | 2007-07-12 | 2009-01-29 | Samsung Electronics Co Ltd | 下部電極を有する相変化記憶素子の形成方法 |
JP2009049326A (ja) * | 2007-08-22 | 2009-03-05 | Philtech Inc | 相変化メモリ装置および相変化メモリ装置の製造方法 |
JP2009117669A (ja) * | 2007-11-07 | 2009-05-28 | Spansion Llc | 半導体装置 |
JP2009130140A (ja) * | 2007-11-22 | 2009-06-11 | Toshiba Corp | 不揮発性半導体記憶装置及びその製造方法 |
US7704788B2 (en) | 2007-04-06 | 2010-04-27 | Samsung Electronics Co., Ltd. | Methods of fabricating multi-bit phase-change memory devices and devices formed thereby |
US7767568B2 (en) | 2007-03-26 | 2010-08-03 | Samsung Electronics Co., Ltd. | Phase change memory device and method of fabricating the same |
KR101370275B1 (ko) | 2007-08-21 | 2014-03-05 | 삼성전자주식회사 | 상변화 메모리 소자 및 그 제조 방법 |
US8791448B2 (en) | 2007-03-27 | 2014-07-29 | Samsung Electronics Co., Ltd. | Semiconductor memory devices having strapping contacts |
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JP2006127583A (ja) * | 2004-10-26 | 2006-05-18 | Elpida Memory Inc | 不揮発性半導体記憶装置及び相変化メモリ |
US7817454B2 (en) * | 2007-04-03 | 2010-10-19 | Micron Technology, Inc. | Variable resistance memory with lattice array using enclosing transistors |
US7989251B2 (en) | 2007-05-14 | 2011-08-02 | Micron Technology, Inc. | Variable resistance memory device having reduced bottom contact area and method of forming the same |
CN101471130B (zh) * | 2007-12-25 | 2011-08-24 | 财团法人工业技术研究院 | 相变存储器与相变存储器的控制方法 |
US8158965B2 (en) * | 2008-02-05 | 2012-04-17 | Macronix International Co., Ltd. | Heating center PCRAM structure and methods for making |
US7961506B2 (en) | 2008-02-05 | 2011-06-14 | Micron Technology, Inc. | Multiple memory cells with rectifying device |
JP2010016193A (ja) * | 2008-07-03 | 2010-01-21 | Toshiba Corp | 抵抗変化型メモリ |
TWI394273B (zh) * | 2008-07-16 | 2013-04-21 | United Microelectronics Corp | 相變化記憶體 |
US10103325B2 (en) * | 2016-12-15 | 2018-10-16 | Winbond Electronics Corp. | Resistance change memory device and fabrication method thereof |
US10818729B2 (en) * | 2018-05-17 | 2020-10-27 | Macronix International Co., Ltd. | Bit cost scalable 3D phase change cross-point memory |
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US20060176724A1 (en) | 2006-08-10 |
JP4591821B2 (ja) | 2010-12-01 |
US7675770B2 (en) | 2010-03-09 |
CN1819256A (zh) | 2006-08-16 |
CN100452418C (zh) | 2009-01-14 |
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