JP2006203220A5 - - Google Patents

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Publication number
JP2006203220A5
JP2006203220A5 JP2006037358A JP2006037358A JP2006203220A5 JP 2006203220 A5 JP2006203220 A5 JP 2006203220A5 JP 2006037358 A JP2006037358 A JP 2006037358A JP 2006037358 A JP2006037358 A JP 2006037358A JP 2006203220 A5 JP2006203220 A5 JP 2006203220A5
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JP
Japan
Prior art keywords
layer
forming
nitride
oxide
peeled
Prior art date
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Granted
Application number
JP2006037358A
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English (en)
Japanese (ja)
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JP4527068B2 (ja
JP2006203220A (ja
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Application filed filed Critical
Priority to JP2006037358A priority Critical patent/JP4527068B2/ja
Priority claimed from JP2006037358A external-priority patent/JP4527068B2/ja
Publication of JP2006203220A publication Critical patent/JP2006203220A/ja
Publication of JP2006203220A5 publication Critical patent/JP2006203220A5/ja
Application granted granted Critical
Publication of JP4527068B2 publication Critical patent/JP4527068B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006037358A 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 Expired - Fee Related JP4527068B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006037358A JP4527068B2 (ja) 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2001216018 2001-07-16
JP2001299620 2001-09-28
JP2006037358A JP4527068B2 (ja) 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2002207536A Division JP4027740B2 (ja) 2001-07-16 2002-07-16 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006203220A JP2006203220A (ja) 2006-08-03
JP2006203220A5 true JP2006203220A5 (zh) 2010-02-04
JP4527068B2 JP4527068B2 (ja) 2010-08-18

Family

ID=36960865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006037358A Expired - Fee Related JP4527068B2 (ja) 2001-07-16 2006-02-15 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法

Country Status (1)

Country Link
JP (1) JP4527068B2 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8048777B2 (en) * 2006-09-29 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
KR20090017014A (ko) 2007-08-13 2009-02-18 삼성전자주식회사 가요성 표시 장치의 제조 방법
JP5368013B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5368014B2 (ja) * 2008-06-24 2013-12-18 共同印刷株式会社 フレキシブル有機ｅｌディスプレイの製造方法
JP5131128B2 (ja) * 2008-09-30 2013-01-30 大日本印刷株式会社 可撓性基板、可撓性基板の製造方法、及び製品
KR101149433B1 (ko) 2009-08-28 2012-05-22 삼성모바일디스플레이주식회사 플렉서블 표시 장치 및 그 제조 방법
US9093397B2 (en) 2011-07-06 2015-07-28 Panasonic Corporation Flexible device manufacturing method and flexible device
KR20150023312A (ko) * 2012-05-29 2015-03-05 아사히 가라스 가부시키가이샤 유리 적층체 및 전자 디바이스의 제조 방법
CN104451612A (zh) * 2014-12-31 2015-03-25 长春迪高实业有限公司 透明导电氧化物膜及其制备方法
JP6899477B2 (ja) * 2019-07-26 2021-07-07 堺ディスプレイプロダクト株式会社 フレキシブルｏｌｅｄデバイス、その製造方法及び支持基板

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07142570A (ja) * 1993-11-12 1995-06-02 Ube Ind Ltd 複合半導体基板及びその製造方法
JP4619461B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜デバイスの転写方法、及びデバイスの製造方法
JP3809681B2 (ja) * 1996-08-27 2006-08-16 セイコーエプソン株式会社 剥離方法
JP4619462B2 (ja) * 1996-08-27 2011-01-26 セイコーエプソン株式会社 薄膜素子の転写方法
DE69728999T2 (de) * 1996-11-11 2005-04-28 Catalysts & Chemicals Industries Co. Ltd., Kawasaki Substratglättungsverfahren
JPH1187799A (ja) * 1997-09-12 1999-03-30 Matsushita Electric Ind Co Ltd 磁気抵抗素子とその製造方法
JPH11135882A (ja) * 1997-10-28 1999-05-21 Sharp Corp 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子
JP4009923B2 (ja) * 1999-09-30 2007-11-21 セイコーエプソン株式会社 Ｅｌパネル
JP2001166301A (ja) * 1999-12-06 2001-06-22 Seiko Epson Corp バックライト内蔵型液晶表示装置及びその製造方法
JP4478268B2 (ja) * 1999-12-28 2010-06-09 セイコーエプソン株式会社 薄膜デバイスの製造方法

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