JP2006188547A - コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料 - Google Patents

コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料 Download PDF

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Publication number
JP2006188547A
JP2006188547A JP2003292534A JP2003292534A JP2006188547A JP 2006188547 A JP2006188547 A JP 2006188547A JP 2003292534 A JP2003292534 A JP 2003292534A JP 2003292534 A JP2003292534 A JP 2003292534A JP 2006188547 A JP2006188547 A JP 2006188547A
Authority
JP
Japan
Prior art keywords
film
coating composition
group
siliceous
siliceous material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003292534A
Other languages
English (en)
Japanese (ja)
Inventor
Tomoko Aoki
木 倫 子 青
Hiroyuki Aoki
木 宏 幸 青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AZ Electronic Materials Japan Co Ltd
Original Assignee
AZ Electronic Materials Japan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by AZ Electronic Materials Japan Co Ltd filed Critical AZ Electronic Materials Japan Co Ltd
Priority to JP2003292534A priority Critical patent/JP2006188547A/ja
Priority to TW093118793A priority patent/TW200507110A/zh
Priority to PCT/JP2004/011136 priority patent/WO2005014744A1/fr
Publication of JP2006188547A publication Critical patent/JP2006188547A/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D143/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium, or a metal; Coating compositions based on derivatives of such polymers
    • C09D143/04—Homopolymers or copolymers of monomers containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
    • H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Paints Or Removers (AREA)
  • Formation Of Insulating Films (AREA)
  • Silicon Compounds (AREA)
JP2003292534A 2003-08-12 2003-08-12 コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料 Pending JP2006188547A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2003292534A JP2006188547A (ja) 2003-08-12 2003-08-12 コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料
TW093118793A TW200507110A (en) 2003-08-12 2004-06-28 Coating composition and low dielectric constant porous silica material produced therewith
PCT/JP2004/011136 WO2005014744A1 (fr) 2003-08-12 2004-08-04 Composition de revetement et materiau siliceux poreux a faible constante dielectrique produit au moyen de ladite composition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003292534A JP2006188547A (ja) 2003-08-12 2003-08-12 コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料

Publications (1)

Publication Number Publication Date
JP2006188547A true JP2006188547A (ja) 2006-07-20

Family

ID=34131729

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003292534A Pending JP2006188547A (ja) 2003-08-12 2003-08-12 コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料

Country Status (3)

Country Link
JP (1) JP2006188547A (fr)
TW (1) TW200507110A (fr)
WO (1) WO2005014744A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009096901A (ja) * 2007-10-18 2009-05-07 Toyota Industries Corp 塗料組成物、塗料組成物を用いた透明性保護膜の製造方法および透明性保護膜を有する有機ガラス
WO2012060399A1 (fr) 2010-11-05 2012-05-10 Ａｚエレクトロニックマテリアルズ株式会社 Procédé de fabrication d'une structure d'isolation

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6475388B1 (ja) * 2018-07-18 2019-02-27 信越化学工業株式会社 ポリシラザン含有組成物

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3330643B2 (ja) * 1992-08-26 2002-09-30 触媒化成工業株式会社 シリカ系被膜形成用塗布液および被膜付基材
JP3414488B2 (ja) * 1994-04-28 2003-06-09 東燃ゼネラル石油株式会社 透明な有機／無機ハイブリッド膜の製造方法
JPH11236533A (ja) * 1998-02-24 1999-08-31 Hitachi Chem Co Ltd シリカ系被膜形成用塗布液及びシリカ系被膜
JP4722269B2 (ja) * 2000-08-29 2011-07-13 Ａｚエレクトロニックマテリアルズ株式会社 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009096901A (ja) * 2007-10-18 2009-05-07 Toyota Industries Corp 塗料組成物、塗料組成物を用いた透明性保護膜の製造方法および透明性保護膜を有する有機ガラス
WO2012060399A1 (fr) 2010-11-05 2012-05-10 Ａｚエレクトロニックマテリアルズ株式会社 Procédé de fabrication d'une structure d'isolation
US8969172B2 (en) 2010-11-05 2015-03-03 Az Electronic Materials Usa Corp. Method for forming isolation structure

Also Published As

Publication number Publication date
TW200507110A (en) 2005-02-16
WO2005014744A1 (fr) 2005-02-17

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