TW200507110A - Coating composition and low dielectric constant porous silica material produced therewith - Google Patents
Coating composition and low dielectric constant porous silica material produced therewithInfo
- Publication number
- TW200507110A TW200507110A TW093118793A TW93118793A TW200507110A TW 200507110 A TW200507110 A TW 200507110A TW 093118793 A TW093118793 A TW 093118793A TW 93118793 A TW93118793 A TW 93118793A TW 200507110 A TW200507110 A TW 200507110A
- Authority
- TW
- Taiwan
- Prior art keywords
- coating composition
- silica material
- porous silica
- dielectric constant
- low dielectric
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 8
- 239000008199 coating composition Substances 0.000 title abstract 4
- 239000000377 silicon dioxide Substances 0.000 title abstract 4
- 239000000463 material Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 125000005373 siloxane group Chemical group [SiH2](O*)* 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D143/00—Coating compositions based on homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and containing boron, silicon, phosphorus, selenium, tellurium, or a metal; Coating compositions based on derivatives of such polymers
- C09D143/04—Homopolymers or copolymers of monomers containing silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Paints Or Removers (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Compounds (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003292534A JP2006188547A (ja) | 2003-08-12 | 2003-08-12 | コーティング組成物、およびそれを用いて製造した低誘電多孔質シリカ質材料 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200507110A true TW200507110A (en) | 2005-02-16 |
Family
ID=34131729
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093118793A TW200507110A (en) | 2003-08-12 | 2004-06-28 | Coating composition and low dielectric constant porous silica material produced therewith |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2006188547A (zh) |
TW (1) | TW200507110A (zh) |
WO (1) | WO2005014744A1 (zh) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5481610B2 (ja) * | 2007-10-18 | 2014-04-23 | 株式会社豊田自動織機 | 塗料組成物、塗料組成物を用いた透明性保護膜の製造方法および透明性保護膜を有する有機ガラス |
JP5405437B2 (ja) | 2010-11-05 | 2014-02-05 | AzエレクトロニックマテリアルズIp株式会社 | アイソレーション構造の形成方法 |
JP6475388B1 (ja) * | 2018-07-18 | 2019-02-27 | 信越化学工業株式会社 | ポリシラザン含有組成物 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3330643B2 (ja) * | 1992-08-26 | 2002-09-30 | 触媒化成工業株式会社 | シリカ系被膜形成用塗布液および被膜付基材 |
JP3414488B2 (ja) * | 1994-04-28 | 2003-06-09 | 東燃ゼネラル石油株式会社 | 透明な有機/無機ハイブリッド膜の製造方法 |
JPH11236533A (ja) * | 1998-02-24 | 1999-08-31 | Hitachi Chem Co Ltd | シリカ系被膜形成用塗布液及びシリカ系被膜 |
JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
-
2003
- 2003-08-12 JP JP2003292534A patent/JP2006188547A/ja active Pending
-
2004
- 2004-06-28 TW TW093118793A patent/TW200507110A/zh unknown
- 2004-08-04 WO PCT/JP2004/011136 patent/WO2005014744A1/ja not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
WO2005014744A1 (ja) | 2005-02-17 |
JP2006188547A (ja) | 2006-07-20 |
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