JP2006186310A - Substrate treatment apparatus and substrate treatment method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide substrate treatment apparatus and a substrate treatment method, in which a flow direction of a treatment liquid is changed at any time, thereby improving treatment efficiency of a substrate to be treated, so that a substrate surface is made even. <P>SOLUTION: Substrate treatment apparatus 1 has a treatment chamber 2 storing several sheets of substrates to be treated W, a plurality of treatment-liquid supply tubes 31 to 35 arranged in a bottom of the treatment chamber, and a control device 5 supplying treatment liquid to the plurality of treatment-liquid supply tubes. In the treatment-liquid supply tubes 31 to 35, a first treatment-liquid supply tube 31 is arranged in the center of a bottom wall surface 22 of the treatment chamber, second treatment-liquid supply tubes 32, 33 are arranged at both sides of the first treatment-liquid supply tube in a manner of directing injection nozzles to the center of the substrate to be treated W stored in the treatment chamber, and third treatment-liquid supply tubes 34, 35 are arranged in sidewalls of the treatment chamber in a manner of directing injection nozzles to a top of the substrate to be treated W. During the cleaning of the substrate to be treated W, the control device 5 supplies the treatment liquid from the first treatment-liquid supply tube 31 at any time, and supplies it from the second and third treatment-liquid supply tubes in alternately switching manner in a second-scale interval. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for processing the surface of various substrates such as a semiconductor wafer, a liquid crystal display panel, and an optical disc, and in particular, increases the processing efficiency of a substrate to be processed at the time of washing with pure water. The present invention relates to a substrate processing apparatus and a substrate processing method capable of making a substrate surface uniform.

Various substrates such as semiconductor wafers, liquid crystal display panels, optical discs, etc. are treated with various chemicals, chemicals with various chemicals, washing with pure water, and drying with organic solvents in order to make the surface clean and uniform. Is done using equipment.
This type of substrate processing apparatus is provided with a plurality of processing tanks storing various processing liquids such as chemical liquids such as hydrofluoric acid and ozone water and pure water (hereinafter, chemical liquids and pure waters are collectively referred to as processing liquids). Then, a so-called multi-tank processing apparatus in which a substrate to be processed is sequentially immersed in these processing tanks to perform a series of surface treatments, or different processing liquids are sequentially applied to this single processing tank in one processing tank. There is a so-called single-tank processing apparatus in which a series of surface treatments are performed by replacement supply.
All of these substrate processing apparatuses perform a water washing process in which a chemical solution adhering to a substrate to be processed is washed away with pure water before the next chemical solution processing is performed after the processing of the substrate to be processed is completed. ing.

FIG. 8 is a cross-sectional view showing an example of a processing tank used in a known substrate processing apparatus 200.
The processing tank 201 is provided with five processing liquid supply pipes 301 to 305 at the bottom. Each of these supply pipes is provided with a plurality of injection nozzles, and among these supply pipes, three supply pipes 301 to 303 have a bottom surface 203 such that the injection nozzles face the center of the substrate W to be processed. The remaining two supply pipes 304 and 305 are attached to the inclined surfaces 203a ′ and 203b ′ so that the spray nozzle faces the top of the substrate W to be processed. In addition, each of the processing liquid supply pipes 301 to 305 is connected to the pure water supply source 40 by a single pipe L via the valve 51.
The valve 51 is connected to the control device 50, and the control device 50 controls the opening and closing of each valve. The pure water is supplied from the pure water supply source 40 to the supply pipes 301 to 305 at the same time. The surface treatment is performed.
When this substrate processing apparatus is used, the supplied pure water forms a water flow in a certain direction in the tank, and the surface of the substrate to be processed is cleaned by this water flow.

  Further, there is also known a substrate processing apparatus that performs surface treatment of a substrate to be processed by sequentially selecting and switching among a plurality of processing liquid supply pipes and supplying the processing liquid (for example, the following) (See Patent Documents 1 and 2).

FIG. 9 is a cross-sectional view showing a processing tank of the substrate processing apparatus described in Patent Document 1 below.
The processing tank 100 is provided with six processing liquid supply pipes 101 to 106 at the bottom. Among the supply pipes, the two processing liquid supply pipes 103 and 104 have injection nozzles to be processed on the substrate W to be processed. The other four processing liquid supply pipes 101, 102, 105, 106 are each set as two sets, and each spray nozzle is attached to the side surface of the substrate W to be processed. Attached to each side wall so as to face each other, several of these six supply pipes are sequentially selected and switched alternately to supply the processing liquid to the processing tank.

The selection of the supply pipe and the switching of the processing liquid are divided into two processing steps I and II. In the processing step I, first, of the six processing liquid supply pipes 101 to 106, four processing liquid supply pipes 102, 103, 104, and 105 are selected, and liquid supply in units of X minutes is performed respectively. In the processing step II, the four processing liquid supply pipes 101, 103, 104, and 106 are selected, and liquid supply is performed in units of Y minutes.
In the cleaning process, these process steps are sequentially repeated, that is, the process for X is performed in process step I, and then the process in process step I is stopped and switched to process step II to be Y minutes. Thereafter, the processing steps I and II are repeated, and the substrate surface cleaning process is performed for a time corresponding to the total number of switching times × (X + Y).
For example, in the water washing treatment after the ammonia overwater treatment, first, four treatment liquid supply pipes 102, 103, 104, and 105 are selected and supplied in the treatment step I, and the substrate to be treated is washed. After a minute, switching to the processing step II, four partially different processing liquid supply pipes 101, 103, 104, 106 are selected and supplied, and the substrate to be processed is cleaned.
When this substrate processing apparatus is used, it takes 10 minutes and 15 seconds for the conventional method to achieve the recovery reference point of 10 MΩ for the specific resistance, whereas this processing apparatus can achieve it in 9 minutes. Yes.

  Further, in the substrate processing apparatus described in Patent Document 2 below, a plurality of processing liquid supply pipes are disposed on the opposing side wall surfaces of the processing tank, and any one of these supply pipes is selectively used. And the processing liquid is supplied to the substrate. According to this apparatus, since various flows of the treatment liquid can be formed, it is possible to suppress stagnation in the tank by continuing the constant flow.

Japanese Patent Laid-Open No. 11-150091 (FIG. 1, paragraphs [0014] to [0018], [0027], [0028]) JP 2001-274133 A (FIG. 7, paragraphs [0039] to [0042])

  According to the known substrate processing apparatus 200, the processing liquids supplied simultaneously from the plurality of processing liquid supply pipes 301 to 305 form a water flow in a fixed direction in the processing tank, and are processed by the water flow in the fixed direction. The surface of the substrate is efficiently cleaned.

However, in the substrate processing apparatus 200, the substrate surface facing the region that hits the flow path is efficiently cleaned, but the substrate surface facing the region that is out of the flow path has a flow velocity because no flow path is formed. Since it becomes slow and a stagnation part may occur, it is not cleaned sufficiently. For this reason, the surface of the substrate to be processed is divided into a region where water washing is performed satisfactorily and a region where washing is insufficient, and so-called cleaning unevenness occurs.
Therefore, in order to eliminate such cleaning unevenness, it is necessary to use a large amount of processing liquid and perform cleaning processing for a long time. Therefore, with such a method, improvement in processing capacity cannot be expected, and processing costs also increase. In addition, since the flow path is fixed in a certain direction, the uneven cleaning is still not solved, and as a result, it is difficult to achieve high quality uniformity on the surface of the substrate to be processed.

  Moreover, since the processing apparatus described in the said patent document 1 selects and switches a several supply pipe | tube, a flow path is changed for every switching. However, even with such selection / switching, cleaning unevenness is not eliminated, and as a result, it is difficult to meet the specifications for high-quality homogenization of the surface of the substrate to be processed that have been required in recent years. Specifically, in this processing tank, two processing steps are set, and the cleaning process is performed by combining these processing steps. However, the processing time of each processing step is in units of minutes. For this reason, for example, in the processing step I, the cleaning is performed for X minutes (7 minutes in the embodiment), so that a channel in a certain direction is formed in the tank during this period, and the substrate surface is cleaned by this channel. Has been. Accordingly, during this period, as in the substrate processing apparatus 200, there are areas where the substrate to be processed is satisfactorily cleaned and areas where only insufficient cleaning is performed. When the etching solution is attached, the etching proceeds during the processing step I, that is, for approximately 7 minutes. After this 7 minutes, the flow path is changed by switching to the processing step II, but the area where the etching process processed in the processing step I has progressed is not repaired, and therefore the substrate surface is made uniform. Is difficult.

  In addition, the substrate processing apparatus disclosed in Patent Document 1 is intended to eliminate “stagnation” that occurs at locations near the bottom and both side walls of the processing tank. For this reason, it is difficult to wash off the chemical solution and the like attached to the substrate surface efficiently. Furthermore, since the entire processing time is long (9 minutes in the embodiment), the amount of processing liquid used increases in proportion to the length of the processing time.

  Further, the substrate processing apparatus described in Patent Document 2 forms a flow path that rotates in a certain direction, for example, clockwise, and processes the substrate surface. Is not resolved.

  In recent years, higher density and higher definition of semiconductor devices are progressing. In accordance with this trend, the substrate processing apparatus is required to be more uniform, so-called uniformity, in order to make the substrate surface flatter.

  Accordingly, the present inventors have sought the cause in view of the fact that it is difficult to make the surface of the substrate to be processed with high accuracy that can satisfy such a requirement in the above-described conventional substrate processing apparatus. It has been found that the factor is the speed at which the chemical solution adhering to the substrate to be treated is washed away with pure water, that is, the replacement speed for replacing the chemical solution with pure water, the so-called substitution efficiency. As a result of examining various countermeasures, it is possible to improve the replacement efficiency between the chemical solution and pure water by changing the selection / switching order of the plurality of processing liquid supply pipes and performing the switching time in a short time. As a result, the inventors have conceived that if the replacement efficiency is increased, the surface of the substrate to be processed can be made more accurate, and the present invention has been completed.

  That is, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can increase the processing efficiency of a substrate to be processed and make the substrate surface uniform by constantly changing the flow direction of the processing liquid. It is in.

In order to achieve the above object, a substrate processing apparatus according to claim 1 is a box-shaped processing tank capable of accommodating a plurality of substrates to be processed in a vertically standing state, and a bottom portion of the processing tank. In a substrate processing apparatus comprising a plurality of processing liquid supply pipes disposed in the control unit and a control device for supplying the processing liquid to these processing liquid supply pipes at a predetermined timing,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. The two processing liquid supply pipes are arranged on both sides of the first processing liquid supply pipe toward the center of the substrate to be processed in which the respective injection nozzles are accommodated, and the third processing liquid supply pipe is further connected to the processing tank. Spray nozzles are disposed on opposite side walls facing the top of the substrate to be processed, and the control device always supplies the processing liquid from the first processing liquid supply pipe during the cleaning of the substrate to be processed. The third processing liquid supply pipe is characterized by having switching means for alternately switching at intervals of seconds.

  According to a second aspect of the present invention, in the substrate processing apparatus according to the first aspect, the switching means switches the second and third processing liquid supply pipes at intervals of 1 to 60 seconds. And

According to a third aspect of the present invention, there is provided a substrate processing apparatus having a box-shaped processing tank having a size capable of accommodating a plurality of substrates to be processed in a vertically erected state, and a plurality of substrates disposed at the bottom of the processing tank. In a substrate processing apparatus including a processing liquid supply pipe and a control device that supplies the processing liquid to these processing liquid supply pipes at a predetermined timing,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. 2. The third processing liquid supply pipe is disposed on both sides of the first processing liquid supply pipe toward the central portion of the substrate to be processed in which the respective injection nozzles are accommodated. Spray nozzles are disposed on opposite side walls of the processing tank toward the top of the substrate to be processed, and the control device always supplies processing liquid from the first processing liquid supply pipe when cleaning the substrate to be processed. There is switching means for sequentially switching and supplying any one of the second processing liquid supply pipe, the third processing liquid supply pipe, and the fourth processing liquid supply pipe at intervals of seconds. It is characterized by.

  According to a fourth aspect of the present invention, in the substrate processing apparatus of the third aspect, the switching means switches the second to fourth processing liquid supply pipes at intervals of 1 to 60 seconds. And

The substrate processing apparatus according to claim 5 is a box-shaped processing tank having a size capable of accommodating a plurality of substrates to be processed in an upright state, and a plurality of substrates disposed at the bottom of the processing tank. In a substrate processing apparatus provided with a processing liquid supply pipe and a control device that supplies the processing liquid to these supply pipes at a predetermined timing,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is a spray nozzle at the center of the bottom wall surface of the treatment tank. Is disposed toward the central portion of the substrate to be processed, the second processing liquid supply pipe is disposed on opposite side walls of the processing tank, and spray nozzles are disposed toward the top of the substrate to be processed. The control device includes switching means for alternately switching and supplying the processing liquid from the first and second processing liquid supply pipes at intervals of seconds when the substrate to be processed is cleaned.

  The invention described in claim 6 is the substrate processing apparatus according to claim 5, wherein the switching means switches the first and second processing liquid supply pipes at intervals of 1 to 60 seconds. And

The substrate processing method according to claim 7, wherein a plurality of substrates to be processed are accommodated in a processing tank, and are processed at a predetermined timing by a control means from a plurality of processing liquid supply pipes arranged at the bottom of the processing tank. In a substrate processing method for processing a surface of a substrate to be processed by supplying a liquid,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. The two processing liquid supply pipes are arranged on both sides of the first processing liquid supply pipe, and the respective spray nozzles are arranged toward the central portion of the substrate to be processed, and the third processing liquid supply pipe is opposed to the processing tank. Spray nozzles are disposed on both side walls of the substrate to be processed toward the top of the substrate to be processed, and the control means constantly supplies the processing liquid from the first processing liquid supply pipe when the substrate to be processed is cleaned. The third processing liquid supply pipe is alternately switched at intervals of seconds and sprayed upward from the bottom of the processing tank to process the surface of the substrate to be processed.

The substrate processing method according to claim 8, wherein a plurality of substrates to be processed are accommodated in a processing tank, and are processed at a predetermined timing by a control means from a plurality of processing liquid supply pipes arranged at the bottom of the processing tank. In a substrate processing method for processing a surface of a substrate to be processed by supplying a liquid,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. 2, the third processing liquid supply pipe is disposed on both sides of the first processing liquid supply pipe toward the center of the substrate to be processed in which the respective spray nozzles are accommodated, and the fourth processing liquid supply pipe is Spray nozzles are disposed on the opposite side walls of the processing tank toward the top of the substrate to be processed, and the control means always supplies the processing liquid from the first processing liquid supply pipe when cleaning the substrate to be processed. From the other second processing liquid supply pipe, the third processing liquid supply pipe, and the fourth processing liquid supply pipe, one of them is sequentially switched at intervals of seconds, and the upper part is moved upward from the bottom of the processing tank. The surface of the substrate to be processed is processed by spraying toward the substrate.

  Further, the invention according to claim 9 is the substrate processing method according to claim 8, wherein the second and third processing liquid supply pipes are supplied with a larger amount of processing liquid than the first processing liquid supply pipe. It is characterized by.

The substrate processing method according to claim 10, wherein a plurality of substrates to be processed are accommodated in a processing tank, and are processed at a predetermined timing by a control means from a plurality of processing liquid supply pipes arranged at the bottom of the processing tank. In a substrate processing method for processing a surface of a substrate to be processed by supplying a liquid,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and among the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is a spray nozzle at the center of the bottom wall surface of the treatment tank. Is disposed toward the central portion of the substrate to be processed, the second processing liquid supply pipe is disposed on opposite side walls of the processing tank, and an injection nozzle is disposed toward the top of the substrate to be processed. When the substrate to be processed is cleaned, the processing liquid is alternately switched from the first and second processing liquid supply pipes at intervals of seconds and sprayed upward from the bottom to process the surface of the substrate to be processed. It is characterized by that.

By providing the above configuration, the present invention has the following excellent effects. That is, according to the first and second aspects of the present invention, when the substrate to be processed is cleaned, the supply of the processing liquid such as pure water is always from the first processing liquid supply pipe and from the second and third processing liquid supply pipes. By being switched and supplied alternately at intervals of seconds, overflow is generated while forming upward turbulent flow upward from the bottom of the processing tank through the center of the substrate to be processed.
This rising turbulent flow is supplied to the entire surface of the substrate to be processed in a short time because the processing liquid is supplied while changing the flow path and flow velocity at any time without forming a fixed flow path. It is possible to quickly wash off chemicals, particles, and the like attached by rubbing with a treatment liquid. Further, this turbulent flow also enters between a plurality of substrates to be processed, and the chemical solution remaining between the substrates is also expelled well.
As a result, the surface of the substrate to be processed is processed with a processing liquid whose flow path and flow velocity change quickly, so that more accurate homogenization processing is possible and processing time is shortened. In addition, the amount of processing liquid used can be reduced as the processing time is shortened. In this case, if the switching time is less than 1 second, turbulent flow occurs, but the switching time is too fast to form a flow rate for washing away the chemical in the processing liquid, so that the substrate surface is rubbed with the processing liquid. In other words, the uniformity of the surface of the substrate to be processed may be impaired, and if the switching time exceeds 60 seconds, the difference from the conventional example is reduced. It is not preferable.

According to the third and fourth aspects of the present invention, when the substrate to be processed is cleaned, the supply of the processing liquid such as pure water is always performed from the first processing liquid supply pipe to the other second processing liquid supply pipe and the third processing liquid. Ascending turbulent flow upward from the bottom of the processing tank through the center of the substrate to be processed by sequentially switching one of the supply pipe and the fourth processing liquid supply pipe at intervals of seconds. Overflow while forming.
This rising turbulent flow is supplied to the entire surface of the substrate to be processed in a short time because the processing liquid is supplied while changing the flow path and flow velocity at any time without forming a fixed flow path. It is possible to quickly wash off chemicals, particles, and the like attached by rubbing with a treatment liquid. Further, this turbulent flow also enters between a plurality of substrates to be processed, and the chemical solution remaining between the substrates is also expelled well.
As a result, the surface of the substrate to be processed is processed with a processing liquid whose flow path and flow velocity change quickly, so that more accurate homogenization processing is possible and processing time is shortened. In addition, the amount of processing liquid used can be reduced as the processing time is shortened. In this case, if the switching time is less than 1 second, turbulent flow occurs, but the switching time is too fast to form a flow rate for washing away the chemical in the processing liquid, so that the substrate surface is rubbed with the processing liquid. In other words, the uniformity of the surface of the substrate to be processed may be impaired, and if the switching time exceeds 60 seconds, the difference from the conventional example is reduced. It is not preferable.

According to the fifth and sixth aspects of the present invention, when the substrate to be processed is cleaned, the processing liquid such as pure water is alternately switched and supplied at intervals of seconds from the first and second processing liquid supply pipes. Overflow is generated while alternately forming upward flow from the bottom of the processing tank through the center of the substrate to be processed and upward flow from the upper center of the processing tank to the bottom.
The turbulent flow generated by the upward flow and the downward flow is supplied to the entire surface of the substrate to be processed in a short time because the processing liquid is supplied while changing the flow path and flow velocity at any time without forming a fixed flow path. It is possible to quickly wash away chemicals, particles, and the like that have been enlarged and adhered as if the substrate surface was rubbed with a processing solution. Further, this turbulent flow also enters between a plurality of substrates to be processed, and the chemical solution remaining between the substrates is also expelled well.
As a result, the surface of the substrate to be processed is processed with a processing liquid whose flow path and flow velocity change quickly, so that more accurate homogenization processing is possible and processing time is shortened. In addition, the amount of processing liquid used can be reduced as the processing time is shortened.

According to the seventh aspect of the present invention, when the substrate to be processed is processed, the processing liquid such as pure water is always supplied from the first processing liquid supply pipe and alternately from the second and third processing liquid supply pipes at intervals of seconds. By being switched to be supplied, the overflow occurs while forming an upward turbulent flow upward from the bottom of the processing tank through the center of the substrate to be processed. That is, the second processing liquid supply pipe and the third processing liquid supply pipe are switched in units of seconds, and the processing liquid is supplied into the processing tank, so that the first processing liquid supply pipe located at the center of the bottom is vertical. Since a flow in a different direction is supplied from the third processing liquid supply pipe to the clockwise and counterclockwise vortex flows formed by the second processing liquid supply pipe on both sides with the direction flow path as a boundary. Since a different flow is introduced into the flow up to that point and a part of the turbulent flow is generated, another vortex flow is formed, but the processing liquid supply pipe to be supplied is changed after a predetermined time. Another turbulence occurs again before it becomes a steady flow.
Therefore, this rising turbulent flow is supplied to the entire surface of the substrate to be processed in a short time because the processing liquid is supplied while changing the flow path and flow velocity at any time without forming a fixed flow path. It is possible to quickly wash away chemicals, particles, and the like attached by rubbing the substrate surface with a processing solution. Further, the rising turbulent flow also enters between the plurality of substrates to be processed, and the chemical solution remaining between the substrates can be expelled well. As a result, the surface of the substrate to be processed is processed with a processing liquid whose flow path and flow velocity change quickly, so that more accurate homogenization processing is possible and processing time is shortened. In addition, the amount of processing liquid used can be reduced as the processing time is shortened.

According to the eighth aspect of the present invention, when the substrate to be processed is processed, the processing liquid such as pure water is always from the first processing liquid supply pipe, and from the other second to fourth processing liquid supply pipes at intervals of seconds. By sequentially switching and supplying any one of the above, overflow is generated while forming upward turbulent flow upward from the bottom of the processing tank through the center of the substrate to be processed. That is, when the second processing liquid supply pipe to the fourth processing liquid supply pipe are switched in units of seconds and the processing liquid is supplied into the processing tank, the clockwise and counterclockwise directions formed by the second processing liquid supply pipe are reversed. Since the flow in the other direction is supplied from the third processing liquid supply pipe to the vortex flow in the clockwise direction, a different flow is introduced into the flow up to that time, and another vortex flow is generated after partial turbulence occurs. Although it is going to be formed, another turbulent flow is generated again before a steady flow occurs because the processing liquid supply pipe to be supplied is changed after a predetermined time.
Therefore, this rising turbulent flow is supplied to the entire surface of the substrate to be processed in a short time because the processing liquid is supplied while changing the flow path and flow velocity at any time without forming a fixed flow path. It is possible to quickly wash away chemicals, particles, and the like attached by rubbing the substrate surface with a processing solution. Further, the rising turbulent flow also enters between the plurality of substrates to be processed, and the chemical solution remaining between the substrates can be expelled well. As a result, the surface of the substrate to be processed is processed with a processing liquid whose flow path and flow velocity change quickly, so that more accurate homogenization processing is possible and processing time is shortened. In addition, the amount of processing liquid used can be reduced as the processing time is shortened.

  According to the ninth aspect of the present invention, since the surface treatment of the substrate to be processed is satisfactorily performed by generating a vortex in the processing tank, the amount of the processing liquid supplied from the second and third processing liquid supply pipes If it is made larger than the first processing liquid supply pipe, eddy currents are likely to be generated, and chemicals, particles, etc. on the surface of the substrate to be processed can be washed off better.

According to the tenth aspect of the present invention, when the substrate to be processed is processed, the first and second processing liquid supply pipes are alternately switched at intervals of seconds and supplied from the bottom of the processing tank. Overflow occurs while alternately forming an upward flow that passes upward through the center of the processing substrate and a downward flow that flows from the upper center of the processing tank toward the bottom. That is, the first processing liquid supply pipe and the second processing liquid supply pipe are switched in units of seconds, and the processing liquid is supplied into the processing tank. 1. A clockwise and counterclockwise vortex is formed by the second processing liquid supply pipe. At the same time, an upward flow is formed in the central portion of the processing tank by supplying the processing liquid from the first processing liquid supply pipe, but the processing liquid supply pipe for supplying the liquid after a predetermined time has passed is set to the second processing liquid. If it changes to a supply pipe | tube, it will try to form a downward flow on the contrary in the center part of a processing tank. As a result, by changing the processing liquid supply pipe for supplying the processing liquid in units of seconds, a steady flow does not occur, and a large turbulent flow occurs because the upflow and the downflow collide.
Therefore, the turbulent flow generated by the upward flow and the downward flow is supplied to the processing liquid while changing the flow path and flow velocity at any time without forming a fixed flow path. It is possible to quickly wash away chemicals, particles, and the like that are enlarged over the entire surface and adhered as if the substrate surface was rubbed with a processing solution. Further, this turbulent flow also enters between a plurality of substrates to be processed, and the chemical solution remaining between the substrates is also expelled well. As a result, the surface of the substrate to be processed is processed with a processing liquid whose flow path and flow velocity change quickly, so that more accurate homogenization processing is possible and processing time is shortened. In addition, the amount of processing liquid used can be reduced as the processing time is shortened.

  Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the following embodiments exemplify a substrate processing apparatus and a substrate processing method for embodying the technical idea of the present invention, and specify the present invention to the substrate processing apparatus and the substrate processing method. And other embodiments within the scope of the claims are equally applicable.

FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 1 of the present invention, and FIG. 1 (a) is a view showing a state in which processing liquid is supplied from three processing liquid supply pipes provided near the bottom. FIG. 1B is a diagram showing a state in which the processing liquid is supplied from three processing liquid supply pipes provided in the central portion and the inclined surface.
As shown in FIG. 1, the substrate processing apparatus 1 includes a processing tank 2 having a size capable of accommodating a processing liquid and a plurality of substrates to be processed, and a plurality of processing liquids disposed at the bottom of the processing tank 2. Supply pipes 31 to 35, a plurality of valves 51 to 53 provided in the middle of the pipe L connected to the processing liquid supply pipe, and a control device 5 that performs opening / closing control of these valves 51 to 53 are provided. Yes.

  The processing tank 2 is a box-type having a size capable of accommodating a plurality of substrates to be processed, for example, about 50 disc-shaped semiconductor wafers (hereinafter referred to as wafers) W having a diameter of 300 mm in a vertically erected state. It consists of a container, and as shown in FIG. 1, the longitudinal cross-sectional shape has comprised the elongate hexagon shape which has a flat surface in the bottom part. That is, it has an opening 21 at the top, is surrounded by side walls 23a and 23b, and has a depth at which the wafer can be sufficiently immersed, and inclined surfaces 23a 'and 23b' having predetermined angles are formed at both corners of the bottom 22. It has a configuration.

Further, a plurality of processing liquid supply pipes 31 to 35 in FIG. 1 are arranged in the processing tank 2 near the bottom. Each of these five treatment liquid supply pipes 31 to 35 has a plurality of spray nozzles (not shown) formed in one or more rows in the longitudinal direction at a predetermined pitch.
And each process liquid supply pipe | tube 31-35 is attached so that a spray nozzle may face a predetermined direction. That is, among the five processing liquid supply pipes 31 to 35, the three processing liquid supply pipes 31, 32, and 33 are attached in the vicinity of the bottom 22 so that the respective injection nozzles face the center of the wafer W. The remaining two processing liquid supply pipes 34 and 35 are attached to the inclined surfaces 23a ′ and 23b ′, respectively, such that the spray nozzle faces the top of the wafer W.

  Also, pure water is supplied to the five treatment liquid supply pipes 31 to 35 via the pipe L and the valves 51 to 53. The valves 51 to 53 are connected to the control device 5, and opening / closing control is performed by the control device 5. Moreover, the pure water supply source is connected to each valve | bulb 51-53.

Next, a wafer processing method using this substrate processing apparatus will be described with reference to FIGS. FIG. 2 is a timing chart for supplying the processing liquid to the processing tank of the substrate processing apparatus according to the first embodiment.
The substrate processing apparatus 1 performs surface treatment of the wafer W in the processing tank 2 by supplying the processing liquid to the processing liquid supply pipes 31 to 35 by controlling the valves 51 to 53 to be opened and closed by the control device 5.
Of the surface treatment of the wafer W, the cleaning process using pure water is as follows. First, as shown in FIG. 2, at time t ₀ , the control device 5 opens the valve 51 and is located in the center. To supply pure water into the treatment tank 2. The liquid supply from the processing liquid supply pipe 31 is continuously performed until the final time t _n when the cleaning process ends.

Further, the control device 5 opens the valve 52 almost simultaneously with the opening of the valve 51 to supply pure water from the two processing liquid supply pipes 32 and 33 adjacent to both sides of the processing liquid supply pipe 31 into the processing tank 2. predetermined time in seconds from time t _1, for example, supplies 10 seconds. At this time, the valve 53 is closed.
By the liquid supply from the processing liquid supply pipe 31, a vertical upward flow path is formed upward from the center of the bottom 22 of the processing tank 2. Further, due to the supply from the treatment liquid supply pipes 32 and 33 located on both sides of the treatment liquid supply pipe 31, clockwise and counterclockwise vortices flow on both sides of the vertical flow path as a boundary. It is formed.
Therefore, the vertical flow path and the left and right vortex flows through the substantially central portion of the wafer W in an upward flow, so-called up-flow, and the wafer W is cleaned. Part of the up-flowed pure water overflows to the outer tank (not shown).

Next, at time t ₁ elapsed from the time t ₀ 10 seconds, closing the valve 52 to stop the pure water supply from the processing liquid supply pipe 32 and 33, about the same time, the inclined surface to open the valve 53 supplying pure water to the time _{t 2} from the two processing liquid supply pipe 34 and 35 located. The time between t _{1 and} t ₂ is 10 seconds, the same as the time between t ₀ and t ₁ .
With supply from each processing liquid supply pipe 34, 35, the vertical flow path of the processing liquid supply pipe 31 located at the center of the bottom is the boundary, and the both sides have already passed from each processing liquid supply pipe 32, 33. Although the clockwise and counterclockwise vortex flows formed by the liquid supply gradually change, the valve 53 is opened and the valve 52 is closed at t ₂ (after 10 seconds) before becoming a steady flow. There is no constant flow. Therefore, both sides of the wafer W are efficiently cleaned by changing the flow path.

Thereafter, the control device 5 alternately switches the valves 52 and 53 at intervals of 10 seconds at the same timing to supply pure water from the processing liquid supply pipes 32 and 33 and the processing liquid supply pipes 34 and 35 into the processing tank 2. The supplied wafer W is cleaned.
Accordingly, the pair of processing liquid supply pipes 32 and 33 and the processing liquid supply pipes 34 and 35 are switched in units of seconds, and the pure water is supplied into the processing tank 2, whereby the processing liquid supply located at the center of the bottom is provided. With the vertical flow path of the pipe 31 as a boundary, the process liquid supply pipe 34, the flow in the other direction is the clockwise and counterclockwise vortex formed by the process liquid supply pipes 32, 33 on both sides. 35, a different flow is introduced into the flow up to that point, and after a part of the turbulence occurs, another vortex flow is to be formed. Is further changed, so another turbulence occurs again before it becomes a steady flow.
By these turbulent flows, the attached chemicals, particles, and the like are quickly washed away as if the surface of the substrate was rubbed with the processing flow.
With this switching liquid supply in units of seconds, the flow velocity in the processing tank changes sharply, and the eddy currents formed by the processing liquid supply pipes 32 and 33 and the processing liquid supply pipes 34 and 35 interact with each other. Since a uniform turbulent flow is formed in the tank 2, the adhesion of particles on the surface of the wafer W can be suppressed.

As a specific example using this substrate processing tank 1, a processing tank 2 having a capacity of 50 liters is used, a wafer having a diameter of 300 mm is accommodated therein, and a predetermined amount of pure water is supplied to each processing liquid supply pipe 31-35. Washed by feeding for hours. Specifically, from the processing liquid supply pipe 31, 20 L / min, the total supply amount 20 L / min of each processing liquid supply pipe 32, 33, the total supply amount 18 L / min of each processing liquid supply pipe 34, 35, each supply time washing the wafer W with its t _n-1 ~t _n to 10 seconds. As a result, about 109.8 L of pure water was used, and good cleaning was achieved in a total of 170 seconds.

FIG. 3 is a schematic cross-sectional view of a substrate processing apparatus according to Embodiment 2 of the present invention, and FIG. 4 is a cross-sectional view illustrating a process liquid supply process from a process liquid supply pipe to a processing tank in the substrate processing apparatus of Embodiment 2. FIG. 5 is a timing chart for supplying the processing liquid to the processing tank of the substrate processing apparatus according to the second embodiment. Note that t _{0 to} t _n which are switching times in the timing chart shown in FIG. 5 are set at equal intervals similarly to the first embodiment, for example, at intervals of 10 seconds.

  As shown in FIG. 3, the substrate processing apparatus 1 </ b> A has processing liquid supply pipes 32 and 33 positioned on both sides of a central processing liquid supply pipe 31 as compared with the substrate processing apparatus 1 of the first embodiment. 53, and the point that the pure water is individually supplied to the treatment tank by opening and closing these valves. That is, the supply pipes 32 and 33 are connected to pure water supply sources via different valves 52 and 53, respectively, and the control device 5 switches the valves 51 to 54 so that the supply tanks 31 to 36 are connected to the treatment tanks. 2 is supplied with pure water. Therefore, configurations common to both are given the same reference numerals, and the description thereof is used, and only different operations will be described.

As shown in FIGS. 4 and 5, pure water is supplied to the processing tank 2 by opening the valve 51 by the control device 5 and supplying pure water into the processing tank 2 from the processing liquid supply pipe 31 located at the center. To do. The liquid supply from the processing liquid supply pipe 31 is continuously performed until the cleaning process is completed, and the supply amount at this time is a fixed amount, for example, 10 L / min.
First, as shown in FIG. 4A, while supplying pure water from the processing liquid supply pipe 31, the control device 5 opens the valve 52 and opens one processing liquid adjacent to the central processing liquid supply pipe 31. during pure water from the supply pipe 32 to the treatment tank 2 from _{t 0} of _{t 1,} for example, supplies 10 seconds. The supply amount of the processing liquid from the processing liquid supply pipe 32 is larger than that of the processing liquid supply pipe 31, for example, 20 L / min. At this time, the valves 53 and 54 are closed. Then, by supplying the processing liquid from the processing liquid supply pipes 31 and 32, a clockwise vortex is formed on the right side of FIG. Is done. However, since the processing tank supply pipe 32 is offset to the right side, the clockwise vortex on the right side is slightly reduced.

Thereafter, when the predetermined time t ₁ is reached, the valve 52 is closed to stop the supply of pure water from the processing liquid supply pipe 32, and at the same time, the valve 53 is opened and pure water is supplied from the processing liquid supply pipe 33. performed during the supply of a predetermined time _{t 1} of _{t 2} (see Figure 4 (b)). In the two vortices formed from t ₀ to t _1, the clockwise vortex on the right side is smaller than the counterclockwise vortex on the left side, whereas in the case of t ₁ to t ₂ , By the flow in the new direction from the liquid supply pipe 33, the counterclockwise vortex flow on the left side tends to form a flow smaller than the clockwise vortex flow on the right side. Due to this supply, the vortex flow formed in each processing liquid supply pipe 31, 32, that is, the supply from the processing liquid supply pipe 32 is stopped when the valve 52 is opened. The residual vortex and the water flow in a new direction based on the supply from the processing liquid supply pipe 33 collide, and a turbulent flow is generated in the processing tank 2.

Then, upon reaching a predetermined time t _2, to stop the pure water supply from the processing liquid supply pipe 33 by closing the valve 53, about the same time, the treatment liquid supply pipe located on the inclined surface by opening the valve 54 Pure water is simultaneously supplied from 34 and 35 for a predetermined time t ₂ to t ₃ to form a new rising water flow in the tank (see FIG. 4C). Also at this time, the flow in the tank due to the new water flow generated by the processing liquid supply pipes 34 and 35 from the vortex formed by the processing liquid supply pipe 33 is going to be changed to the flow of FIG. Colliding with the previous flow, turbulence is generated in the treatment tank 2. By performing FIG 4 (a) ~ 4 switches the predetermined number of times, as shown in (c) (in FIG. 5, for example t _n times), the surface treatment of the wafer W is performed.

  As a specific example using this substrate processing apparatus 1A, a processing tank 2 having a capacity of 40 liters is used, a wafer having a diameter of 300 mm is accommodated therein, and a predetermined amount of pure water is supplied to each processing liquid processing liquid supply pipe 31-35. Was supplied for a predetermined time and washed. Specifically, a processing liquid of 10 L / min is always supplied from the processing liquid supply pipe 31, and the processing liquid supplied from the processing liquid supply pipes 32 and 33 and the processing liquid supplied from the processing liquid supply pipes 34 and 35. The total was 20 L / min. As a result, an etching uniformity of 3% could be achieved with a total treatment time of 6 minutes and a pure water consumption of 180 liters. For example, when the uniformity of the conventional processing apparatus shown in FIG. 8 was used, the processing time took 8 minutes and the amount of pure water used was 480 liters. As a result, according to the substrate processing apparatus 1A of the second embodiment, the processing time is shortened and the amount of pure water used is greatly reduced.

  In the first and second embodiments, the three treatment liquid supply pipes are disposed near the bottom 22 of the treatment tank 2, but the same effect can be expected even if the central treatment liquid supply pipe is omitted. Therefore, the base processing apparatus 1B of the third embodiment has a configuration in which the central processing liquid supply pipe 31 is omitted or not used among the three processing liquid supply pipes 31 to 33 located at the bottom of the substrate processing apparatus 1. have. Accordingly, this configuration is the same as the first and second embodiments except that the apparatus and the processing liquid supply pipe 31 are omitted or not used, and the other configurations are the same. Only the different operations will be described with the aid of the description.

A processing method of the wafer W using the substrate processing apparatus 1B will be described with reference to FIGS. FIG. 6 is a schematic sectional view showing a substrate processing apparatus according to Embodiment 3 of the present invention, and FIG. 6A is a view showing a state in which processing liquid is supplied from two processing liquid supply pipes provided near the bottom. FIG. 6B shows a state in which the processing liquid is supplied from two processing liquid supply pipes provided on the inclined surface, and FIG. 7 shows a timing chart for supplying the processing liquid to the processing tank.
The substrate processing apparatus 1 </ b> B performs surface treatment of the wafer W in the processing tank 2 by supplying the processing liquid to the processing liquid supply pipes 32 to 35 by controlling the valves 52 and 53 to be opened and closed by the control device 5.
Of the surface treatment of the wafer W, the cleaning process using pure water is as follows. First, as shown in FIG. 7, at the time t ₀ , the control device 5 opens the valve 52 and is located in the center. , 33 to supply pure water into the treatment tank 2. At this time, the valve 53 is closed.
By supplying liquid from the processing liquid supply pipes 32 and 33, a substantially vertical upward flow path is formed upward from the center of the bottom 22 of the processing tank 2, and this flow path is clockwise and counterclockwise on both sides. The vortex flows in a clockwise direction, and the vortex flows through an approximately upward center of the wafer W in a so-called up-flow, so-called up-flow, and the wafer W is cleaned. Part of the up-flowed pure water overflows to the outer tank (not shown).

Next, at time t ₁ after 10 seconds from time t ₀ , the valve 52 is closed to stop the supply of pure water from the processing liquid supply pipes 32 and 33, and at the same time, the valve 53 is opened to open the inclined surface. supplying pure water to the time _{t 2} from the two processing liquid supply pipe 34 and 35 located. The time between t _{1 and} t ₂ is 10 seconds, the same as the time between t ₀ and t ₁ .
The flow of the vortex flow in the clockwise direction and the counterclockwise direction formed by the processing liquid supply pipes 32 and 33 at the times t _{1 to} t ₂ due to the liquid supply from the processing liquid supply pipes 34 and 35 is the same as in the first embodiment. Although gradually changing, there is no upward flow at the center, so a downward flow is generated in the central portion. This flow produces a larger turbulence than in Example 1. Therefore, both sides of the wafer W are further efficiently cleaned by changing the flow path. In the substrate processing apparatus 1 according to the first embodiment, the eddy current always forms an upward flow in the central portion due to the supply of liquid from the processing liquid supply pipe 31, but in the substrate processing apparatus 1B, the downward flow is generated in the central portion. Since the liquid supply to be generated is performed, the turbulent flow is larger than that of the substrate processing apparatus 1 of the first embodiment.

Thereafter, the control device 5 alternately switches the valves 52 and 53 at intervals of 10 seconds at the same timing, so that pure water is supplied from the processing liquid supply pipes 32 and 33 and the processing liquid supply pipes 34 and 35 into the processing tank 2. To clean the wafer W.
Therefore, when the pair of processing liquid supply pipes 32 and 33 and the processing liquid supply pipes 34 and 35 are switched in units of seconds and pure water is supplied into the processing tank 2, the upward flow formed in the center portion is increased. Begins to change to a downward flow after 10 seconds. The flow in the center always changes as it starts to change, and again after 10 seconds it starts to change to an upward flow again. The wafer W is cleaned by the reversal of the flow direction.
With this switching liquid supply in units of seconds, the flow velocity in the processing tank changes sharply, and the eddy currents formed by the processing liquid supply pipes 32 and 33 and the processing liquid supply pipes 34 and 35 interact with each other. A uniform turbulent flow is generated in the tank 2 and there is no steady stagnation, so that the adhesion of particles on the surface of the wafer W can be suppressed.

As a specific example using this substrate processing tank 1B, a processing tank 2 having a volume of 50 liters is used, a wafer having a diameter of 300 mm is accommodated therein, and a predetermined amount of pure water is supplied to each of the processing liquid supply pipes 32-35. Washed by feeding for hours. Specifically, the total supply amount 28 L / min of each processing liquid supply pipe 32, 33, the total supply amount 26 L / min of each processing liquid supply pipe 34, 35, and each supply time t _{n−1 to} t _n are set to 10 seconds. The wafer W was cleaned. As a result, about 106.8 L of pure water was used, and good cleaning was achieved in a total of 240 seconds.
Although there is no further detailed example, it is obvious that the method is used just before a single tank using a plurality of chemical solutions and is also effective for expelling other processing solutions.
In this embodiment, the switching time is set to a fixed value of 10 seconds. However, if the switching time is between 1 and 60 seconds, a predetermined effect is obtained. Many variations are possible, such as a steady flow.

FIG. 1 is a schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 1 of the present invention, and FIG. 1A is a view showing a state in which processing liquid is supplied from three processing liquid supply pipes provided near the bottom; FIG. 1B is a diagram showing a state in which processing liquid is supplied from three processing liquid supply pipes provided in the central portion and the inclined surface, A timing chart for supplying a processing liquid to a processing tank of a substrate processing apparatus according to Example 1, Schematic sectional view showing a substrate processing apparatus according to Example 2 of the present invention, Sectional drawing explaining the process liquid supply process from the process liquid supply pipe | tube of the substrate processing apparatus which concerns on Example 2 into a process tank, A timing chart for supplying a processing liquid to a processing tank of a substrate processing apparatus according to Example 2, FIG. 6A is a schematic cross-sectional view showing a substrate processing apparatus according to Embodiment 3 of the present invention, and FIG. 6A is a diagram showing a state in which processing liquid is supplied from two processing liquid supply pipes provided near the bottom; (B) is a diagram showing a state in which processing liquid is supplied from two processing liquid supply pipes provided on an inclined surface; A timing chart for supplying a processing liquid to a processing tank of a substrate processing apparatus according to Example 3, Schematic sectional view showing a substrate processing apparatus of the prior art, Sectional drawing which shows the substrate processing apparatus of a prior art.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1, 1A, 1B Substrate processing apparatus 2 Processing tank 5 Control apparatus 31-35 Processing liquid supply pipe 51-54 Valve

Claims (10)

A box-shaped processing tank of a size that can accommodate a plurality of substrates to be processed in an upright state, a plurality of processing liquid supply pipes disposed at the bottom of the processing tank, and supply of these processing liquids In a substrate processing apparatus comprising a control device for supplying a processing liquid to a tube at a predetermined timing,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. The two processing liquid supply pipes are arranged on both sides of the first processing liquid supply pipe toward the center of the substrate to be processed in which the respective injection nozzles are accommodated, and the third processing liquid supply pipe is further connected to the processing tank. Spray nozzles are disposed on opposite side walls facing the top of the substrate to be processed, and the control device always supplies the processing liquid from the first processing liquid supply pipe during the cleaning of the substrate to be processed. A substrate processing apparatus comprising switching means for alternately switching and supplying the third processing liquid supply pipe at intervals of seconds.   The substrate processing apparatus according to claim 1, wherein the switching unit switches the second and third processing liquid supply pipes at intervals of 1 to 60 seconds. A box-shaped processing tank of a size that can accommodate a plurality of substrates to be processed in an upright state, a plurality of processing liquid supply pipes disposed at the bottom of the processing tank, and supply of these processing liquids In a substrate processing apparatus comprising a control device for supplying a processing liquid to a tube at a predetermined timing,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. 2. The third processing liquid supply pipe is disposed on both sides of the first processing liquid supply pipe toward the central portion of the substrate to be processed in which the respective injection nozzles are accommodated. Spray nozzles are disposed on opposite side walls of the processing tank toward the top of the substrate to be processed, and the control device always supplies processing liquid from the first processing liquid supply pipe when cleaning the substrate to be processed. There is switching means for sequentially switching and supplying any one of the second processing liquid supply pipe, the third processing liquid supply pipe, and the fourth processing liquid supply pipe at intervals of seconds. A substrate processing apparatus.   4. The substrate processing apparatus according to claim 3, wherein the switching unit switches the second to fourth processing liquid supply pipes at intervals of 1 to 60 seconds. A box-shaped processing tank of a size that can accommodate a plurality of substrates to be processed in a vertically standing state, a plurality of processing liquid supply pipes disposed at the bottom of the processing tank, and a supply pipe In a substrate processing apparatus provided with a control device for supplying a processing liquid at a predetermined timing,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is a spray nozzle at the center of the bottom wall surface of the treatment tank. Is disposed toward the central portion of the substrate to be processed, the second processing liquid supply pipe is disposed on opposite side walls of the processing tank, and spray nozzles are disposed toward the top of the substrate to be processed. The control apparatus includes a substrate processing unit that includes a switching unit that alternately switches and supplies the processing liquid from the first and second processing liquid supply pipes at intervals of seconds when the substrate to be processed is cleaned. apparatus.   6. The substrate processing apparatus according to claim 5, wherein the switching unit switches the first and second processing liquid supply pipes at intervals of 1 to 60 seconds. A plurality of substrates to be processed are accommodated in a processing tank, and a processing liquid is supplied at a predetermined timing by a control means from a plurality of processing liquid supply pipes arranged at the bottom of the processing tank, and the surface of the substrate to be processed is In the substrate processing method to process,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. The two processing liquid supply pipes are arranged on both sides of the first processing liquid supply pipe, and the respective spray nozzles are arranged toward the central portion of the substrate to be processed, and the third processing liquid supply pipe is opposed to the processing tank. Spray nozzles are disposed on both side walls of the substrate to be processed toward the top of the substrate to be processed, and the control means constantly supplies the processing liquid from the first processing liquid supply pipe when the substrate to be processed is cleaned. Substrate processing method characterized in that the surface of the substrate to be processed is processed by being supplied alternately from the third processing liquid supply pipe at intervals of seconds and sprayed upward from the bottom of the processing tank. . A plurality of substrates to be processed are accommodated in a processing tank, and a processing liquid is supplied at a predetermined timing by a control means from a plurality of processing liquid supply pipes arranged at the bottom of the processing tank, and the surface of the substrate to be processed is In the substrate processing method to process,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and of the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is formed at the center of the bottom wall surface of the treatment tank. 2, the third processing liquid supply pipe is disposed on both sides of the first processing liquid supply pipe toward the center of the substrate to be processed in which the respective spray nozzles are accommodated, and the fourth processing liquid supply pipe is Spray nozzles are disposed on the opposite side walls of the processing tank toward the top of the substrate to be processed, and the control means always supplies the processing liquid from the first processing liquid supply pipe when cleaning the substrate to be processed. From the other second processing liquid supply pipe, the third processing liquid supply pipe, and the fourth processing liquid supply pipe, one of them is sequentially switched at intervals of seconds, and the upper part is moved upward from the bottom of the processing tank. Substrate processing method, wherein the surface of the substrate to be processed is processed by being sprayed toward the substrate .   9. The substrate processing method according to claim 8, wherein the second and third processing liquid supply pipes are supplied with a larger amount of processing liquid than the first processing liquid supply pipe. A plurality of substrates to be processed are accommodated in a processing tank, and a processing liquid is supplied at a predetermined timing by a control means from a plurality of processing liquid supply pipes arranged at the bottom of the processing tank, and the surface of the substrate to be processed is In the substrate processing method to process,
Each of the treatment liquid supply pipes has a plurality of spray nozzles, and among the plurality of treatment liquid supply pipes, the first treatment liquid supply pipe is a spray nozzle at the center of the bottom wall surface of the treatment tank. Is disposed toward the central portion of the substrate to be processed, the second processing liquid supply pipe is disposed on opposite side walls of the processing tank, and an injection nozzle is disposed toward the top of the substrate to be processed. When the substrate to be processed is cleaned, the processing liquid is alternately switched from the first and second processing liquid supply pipes at intervals of seconds and sprayed upward from the bottom to process the surface of the substrate to be processed. And a substrate processing method.

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