WO2021210385A1

WO2021210385A1 - Substrate processing device and substrate processing method

Info

Publication number: WO2021210385A1
Application number: PCT/JP2021/013523
Authority: WO
Inventors: 宏展百武; 辰也永松
Original assignee: 東京エレクトロン株式会社
Priority date: 2020-04-13
Filing date: 2021-03-30
Publication date: 2021-10-21
Also published as: JPWO2021210385A1; JP7357772B2; CN115461844A

Abstract

A substrate processing device (1, 1A to 1C) of the present disclosure is provided with a processing bath (11), a first nozzle (30), a second nozzle (40, 40B), and a flow volume control unit (5). The processing bath (11) performs processing by immersing a plurality of substrates (W) in a processing fluid. The first nozzle (30) is disposed lower than the plurality of substrates (W) in the processing bath (11) and supplies a temperature-adjusted processing fluid to the processing bath (11). The second nozzle (40, 40B) is disposed higher than the first nozzle (30) in the processing bath (11) and supplies the temperature-adjusted processing fluid to the processing bath (11). The flow volume control unit (5), when a difference between the temperature of the processing fluid in a first position lower than the plurality of substrates (W) and the temperature of the processing fluid in a second position higher than a virtual center line dividing the plurality of substrates (W) into two vertically is greater than a threshold value, increases the flow volume of the temperature-adjusted processing fluid supplied from the second nozzle (40, 40B).

Description

Substrate processing equipment and substrate processing method

This disclosure relates to a substrate processing apparatus and a substrate processing method.

Conventionally, there is known a substrate processing apparatus that collectively processes a plurality of substrates by immersing a lot formed of a plurality of substrates in a processing tank in which a processing liquid is stored.

JP-A-2018-174258

The present disclosure provides a technique capable of improving the temperature uniformity of the treatment liquid in the treatment tank.

The substrate processing apparatus according to one aspect of the present disclosure includes a processing tank, a first nozzle, a second nozzle, and a flow rate control unit. In the treatment tank, a plurality of substrates are immersed in a treatment liquid for treatment. The first nozzle is arranged inside the treatment tank below the plurality of substrates, and supplies the temperature-controlled treatment liquid to the treatment tank. The second nozzle is arranged above the first nozzle inside the treatment tank, and supplies the temperature-controlled treatment liquid to the treatment tank. The flow control unit determines the temperature of the processing liquid at the first position below the plurality of substrates and the temperature of the processing liquid at the second position above the virtual center line that divides the plurality of substrates into upper and lower halves. When the difference exceeds the threshold value, the flow rate of the temperature-controlled processing liquid supplied from the second nozzle is increased.

According to the present disclosure, the temperature uniformity of the treatment liquid in the treatment tank can be improved.

FIG. 1 is a block diagram showing a configuration of a substrate processing apparatus according to the first embodiment. FIG. 2 is a plan view of the inner tank according to the first embodiment as viewed from above. FIG. 3 is a cross-sectional view of the inner tank according to the first embodiment as viewed from the negative direction of the Y axis to the positive direction of the Y axis of FIG. FIG. 4 is a cross-sectional view of the inner tank according to the first embodiment as viewed from the positive direction of the X-axis to the negative direction of the X-axis of FIG. FIG. 5 is a flowchart showing a processing procedure executed by the substrate processing apparatus according to the first embodiment. FIG. 6 is a diagram for explaining an example of the control process of the liquid feeding mechanism. FIG. 7 is a diagram showing a configuration of a substrate processing apparatus according to the first modification. FIG. 8 is a diagram showing a configuration of a substrate processing apparatus according to a second embodiment. FIG. 9 is a plan view of the inner tank according to the second embodiment as viewed from above. FIG. 10 is a cross-sectional view of the inner tank according to the second embodiment as viewed from the negative direction of the Y axis to the positive direction of the Y axis of FIG. FIG. 11 is a flowchart showing the procedure of the flow rate control process according to the second embodiment. FIG. 12 is a flowchart showing the procedure of the temperature control process according to the second embodiment. FIG. 13 is a diagram showing a configuration of a substrate processing apparatus according to a third embodiment. FIG. 14 is a view of the lid body according to the third embodiment as viewed from below. FIG. 15 is a view of the lid body according to the third embodiment as viewed from the positive direction of the X-axis to the negative direction of the X-axis of FIG.

Hereinafter, a mode for carrying out the substrate processing apparatus and the substrate processing method according to the present disclosure (hereinafter, referred to as “embodiment”) will be described in detail with reference to the drawings. The present disclosure is not limited by this embodiment. In addition, each embodiment can be appropriately combined as long as the processing contents do not contradict each other. Further, in each of the following embodiments, the same parts are designated by the same reference numerals, and duplicate description is omitted.

Further, in the embodiments shown below, expressions such as "constant", "orthogonal", "vertical" or "parallel" may be used, but these expressions are strictly "constant", "orthogonal", and "parallel". It does not have to be "vertical" or "parallel". That is, each of the above expressions allows for deviations in manufacturing accuracy, installation accuracy, and the like.

Further, in each drawing referred to below, in order to make the explanation easy to understand, an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined and the Z-axis positive direction is the vertical upward direction is shown. In some cases. Further, the rotation direction centered on the vertical axis may be referred to as the θ direction.

A substrate processing apparatus is known that collectively processes a plurality of substrates by immersing a lot formed of a plurality of substrates in a processing tank in which a processing liquid is stored.

In the substrate processing apparatus, a nozzle for discharging the temperature-adjusted processing liquid is arranged at the lower part in the processing tank, and the temperature-adjusted processing liquid is discharged from the nozzle during the substrate processing to process the temperature-adjusted processing liquid in the processing tank. It forms a liquid flow.

As described above, in this type of substrate processing apparatus, since the temperature-controlled processing liquid is supplied from the lower part of the processing tank, there is a possibility that a temperature difference of the processing liquid may occur between the lower part and the upper part in the processing tank. Specifically, the temperature of the treatment liquid in the upper part of the treatment tank is lower than the temperature of the treatment liquid in the lower part of the treatment layer.

If there is a temperature difference in the treatment liquid in the treatment tank, the in-plane uniformity of etching of the substrate will decrease. Therefore, a technique capable of improving the temperature uniformity of the treatment liquid in the treatment tank, and in particular, reducing the temperature difference of the treatment liquid in the vertical direction in the treatment tank is expected.

(First Embodiment)
<Configuration of board processing equipment>
The configuration of the substrate processing apparatus according to the first embodiment will be described with reference to FIG. FIG. 1 is a block diagram showing a configuration of a substrate processing apparatus according to the first embodiment.

The substrate processing device 1 shown in FIG. 1 processes a substrate W such as a semiconductor wafer in lot units. One lot is formed of a plurality of (for example, 50 sheets) substrates W. The plurality of substrates W forming one lot are arranged at regular intervals with the plate surfaces facing each other.

As shown in FIG. 1, the substrate processing apparatus 1 includes a processing tank 10, an elevating mechanism 20, a plurality of (three in this case) first nozzles 30, and a plurality of (here, two) second nozzles. 40 and. Further, the substrate processing device 1 includes a first supply path 50 and a second supply path 60.

In the processing tank 10, an etching process is performed in which the silicon nitride film is selectively etched out of the silicon nitride film (SiN) and the silicon oxide film (SiO2) formed on the substrate W using a predetermined etching solution. In such an etching treatment, a solution obtained by adding a silicon (Si) -containing compound to an aqueous solution of phosphoric acid (H3PO4) to adjust the silicon concentration is used as the etching solution.

As a method for adjusting the silicon concentration in the etching solution, a method of immersing a dummy substrate in a phosphoric acid aqueous solution to dissolve silicon (seasoning) or a method of dissolving a silicon-containing compound such as colloidal silica in a phosphoric acid aqueous solution is used. be able to. Further, the silicon concentration may be adjusted by adding an aqueous solution of a silicon-containing compound to the aqueous solution of phosphoric acid.

The processing tank 10 includes an inner tank 11 and an outer tank 12. The inner tank 11 is a box-shaped tank whose upper part is open, and stores the etching solution inside. One lot of the substrate W arranged in the upright posture is immersed in the etching solution stored in the inner tank 11.

The outer tank 12 is open above and is arranged around the upper part of the inner tank 11. The etching solution overflowing from the inner tank 11 flows into the outer tank 12.

The phosphoric acid aqueous solution supply unit 13, the silicon supply unit 14, and the DIW supply unit 15 are connected to the outer tank 12.

The phosphoric acid aqueous solution supply unit 13 includes a phosphoric acid aqueous solution supply source 131, a phosphoric acid aqueous solution supply line 132, and a flow rate regulator 133.

The phosphoric acid aqueous solution supply source 131 supplies a phosphoric acid aqueous solution in which the phosphoric acid concentration is concentrated to a desired concentration. The phosphoric acid aqueous solution supply line 132 connects the phosphoric acid aqueous solution supply source 131 and the outer tank 12, and supplies the phosphoric acid aqueous solution from the phosphoric acid aqueous solution supply source 131 to the outer tank 12.

The flow rate regulator 133 is provided in the phosphoric acid aqueous solution supply line 132, and adjusts the supply amount of the phosphoric acid aqueous solution supplied to the outer tank 12. The flow rate regulator 133 includes an on-off valve, a control valve, a flow meter, and the like.

The silicon supply unit 14 has a silicon supply source 141, a silicon supply line 142, and a flow rate regulator 143.

The silicon supply source 141 is a tank for storing an aqueous solution of a silicon-containing compound. The silicon supply line 142 connects the silicon supply source 141 and the outer tank 12, and supplies the silicon-containing compound aqueous solution from the silicon supply source 141 to the outer tank 12.

The flow rate regulator 143 is provided in the silicon supply line 142 and adjusts the supply amount of the silicon-containing compound aqueous solution supplied to the outer tank 12. The flow rate regulator 143 is composed of an on-off valve, a control valve, a flow meter, and the like. The silicon concentration of the etching solution is adjusted by adjusting the supply amount of the silicon-containing compound aqueous solution by the flow rate regulator 143.

The DIW supply unit 15 has a DIW supply source 151, a DIW supply line 152, and a flow rate regulator 153. The DIW supply unit 15 supplies DIW (DeIonized Water) to the outer tank 12 in order to replenish the water evaporated by heating the etching solution.

The DIW supply line 152 connects the DIW supply source 151 and the outer tank 12, and supplies DIW at a predetermined temperature from the DIW supply source 151 to the outer tank 12.

The flow rate regulator 153 is provided in the DIW supply line 152 and adjusts the supply amount of DIW supplied to the outer tank 12. The flow rate regulator 153 is composed of an on-off valve, a control valve, a flow meter, and the like. By adjusting the supply amount of DIW by the flow rate regulator 153, the temperature of the etching solution, the phosphoric acid concentration, and the silicon concentration are adjusted.

The elevating mechanism 20 holds a plurality of substrates W forming a lot side by side in an upright posture. Further, the elevating mechanism 20 elevates and elevates a plurality of substrates W between an upper position above the liquid level of the etching solution stored in the inner tank 11 and an immersion position inside the inner tank 11. Note that FIG. 1 shows a state in which a plurality of substrates W are arranged at immersion positions. As shown in FIG. 1, the immersion position is a position where the entire substrate W is immersed in the etching solution.

The plurality of first nozzles 30 are arranged below the plurality of substrates W inside the inner tank 11, and supply the temperature-controlled etching solution to the inner tank 11. Each of the first nozzles 30 extends along the arrangement direction (Y-axis direction) of the plurality of substrates W, and the temperature is adjusted from a plurality of discharge ports provided along the arrangement direction of the plurality of substrates W. Discharge the etching solution.

The first supply path 50 is connected to a plurality of first nozzles 30 and supplies a temperature-controlled etching solution to the plurality of first nozzles 30. Specifically, the first supply path 50 is a circulation path connecting the outer tank 12 and the plurality of first nozzles 30, and a plurality of etching solutions overflowing from the inner tank 11 and flowing into the outer tank 12 are introduced. It is supplied to 1 nozzle 30.

The first supply path 50 is provided with a liquid feeding mechanism 51, a temperature adjusting unit 52, and a filter 53 in this order from the upstream side (the side closer to the outer tank 12).

The liquid feeding mechanism 51 is, for example, a vacuum pump or the like, and sends out the etching liquid that has flowed into the first supply path 50 to the downstream. The temperature adjusting unit 52 is, for example, a sheathed heater or the like, and adjusts the temperature of the etching solution flowing through the first supply path 50. Specifically, the temperature adjusting unit 52 heats the temperature of the etching solution flowing through the first supply path 50. The filter 53 removes impurities from the etching solution flowing through the first supply path 50.

The plurality of second nozzles 40 are arranged inside the inner tank 11 above the plurality of first nozzles 30, and supply the temperature-controlled etching solution to the inner tank 11.

The plurality of first nozzles 30 described above constantly supply the etching solution during the processing of the plurality of substrates W. On the other hand, the plurality of second nozzles 40 are auxiliary used in order to reduce the temperature difference of the etching solution in the vertical direction in the inner tank 11.

Here, "auxiliary" means that the flow rate of the temperature-adjusted etching solution supplied from the plurality of second nozzles 40 is temporarily increased during the processing of the plurality of substrates W. “Increasing the flow rate” means that the temperature is adjusted from the plurality of second nozzles 40 from the state where the flow rate is 0, that is, the state where the supply of the temperature-adjusted etching liquid from the plurality of second nozzles 40 is stopped. It also includes the case of starting the supply of the etching solution.

In the first embodiment, the plurality of second nozzles 40 are above the first nozzle 30 and below the virtual center line L1 that vertically divides the plurality of substrates W arranged at the immersion position into two. Be placed. The specific configuration of the second nozzle 40 will be described later.

The second supply path 60 is connected to a plurality of second nozzles 40, and supplies the temperature-controlled etching solution to the plurality of second nozzles 40.

The second supply path 60 is a branch path branching from the first supply path 50. Specifically, the second supply path 60 branches from the first supply path 50 downstream of the filter 53. The second supply path 60 may be branched from at least the first supply path 50 downstream of the temperature adjusting unit 52.

The second supply path 60 is provided with a flow rate regulator 61 and a filter 62 in order from the upstream side (the side closer to the first supply path 50).

The flow rate regulator 61 adjusts the flow rate of the temperature-adjusted etching solution flowing through the second supply path 60. The flow rate regulator 61 is composed of an on-off valve, a control valve, a flow meter, and the like. The on-off valve is a valve that fully opens or closes the second supply path 60, and the adjusting valve is a valve that can adjust the opening degree of the second supply path 60. The filter 62 removes impurities from the etching solution flowing through the second supply path 60.

The substrate processing device 1 includes a first temperature sensor 70 and a second temperature sensor 80. The first temperature sensor 70 detects the temperature of the etching solution at the first position below the plurality of substrates W arranged at the immersion position. Further, the second temperature sensor 80 detects the temperature of the etching solution at the second position above the center line L1.

The first temperature sensor 70 is provided between the temperature adjusting unit 52 and the filter 53 in the first supply path 50. The first temperature sensor 70 detects the temperature of the etching solution flowing through the first supply path 50 as the temperature of the etching solution at the first position. The detection results of the first temperature sensor 70 and the second temperature sensor 80 are output to the control unit 5 described later. The first temperature sensor 70 may be arranged at least downstream of the temperature adjusting unit 52 in the first supply path 50. For example, the first temperature sensor 70 may be provided downstream of the filter 53 in the first supply path 50.

The substrate processing device 1 includes a control unit 5. The control unit 5 controls the operation of each unit of the substrate processing device 1 based on signals from switches, various sensors, and the like. Specifically, the control unit 5 controls the liquid feeding mechanism 51, the temperature adjusting unit 52, the

flow rate regulator

61, 133, 143, 153, and the like.

The control unit 5 is, for example, a computer and has a storage medium that can be read by the computer. The storage medium stores programs that control various processes executed by the substrate processing device 1.

The control unit 5 controls the operation of the substrate processing device 1 by reading and executing the program stored in the storage medium. For example, the control unit 5 functions as a flow rate control unit that controls the flow rate of the temperature-controlled etching solution supplied from the plurality of first nozzles 30 and the plurality of second nozzles 40 by reading and executing the above program. do. Further, the control unit 5 functions as a temperature control unit that controls the temperature adjustment unit 52 based on the detection results of at least one of the first temperature sensor 70 and the second temperature sensor 80 by reading and executing the above program. ..

The program may be stored in a storage medium readable by a computer, and may be installed in the storage medium of the control unit 5 from another storage medium.

Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.

The substrate processing device 1 may include, for example, a gas supply unit that supplies a gas such as nitrogen gas below the plurality of first nozzles 30.

<Structure of 2nd nozzle>
Next, a specific configuration of the second nozzle 40 will be described with reference to FIGS. 2 to 4. FIG. 2 is a plan view of the inner tank 11 according to the first embodiment as viewed from above. FIG. 3 is a cross-sectional view of the inner tank 11 according to the first embodiment as viewed from the negative direction of the Y axis to the positive direction of the Y axis of FIG. FIG. 4 is a cross-sectional view of the inner tank 11 according to the first embodiment as viewed from the positive direction of the X-axis to the negative direction of the X-axis of FIG. In addition, in order to facilitate understanding, the number of substrates W is reduced in FIGS. 2 and 4.

As shown in FIG. 2, the second nozzle 40 has a first discharge portion 41 extending along the arrangement direction (Y-axis direction) of the plurality of substrates W and a horizontal direction orthogonal to the arrangement direction of the plurality of substrates W. A second discharge portion 42 extending along (X-axis direction) is provided. The first discharge unit 41 is provided with a plurality of first discharge ports 411 along the Y-axis direction. Further, the second discharge portion 42 is provided with a plurality of second discharge ports 421 along the X-axis direction.

The ends of the first discharge unit 41 and the second discharge unit 42 are integrally connected to each other. That is, the second nozzle 40 has an L-shape in a plan view. One of the two second nozzles 40 is arranged close to one side wall 111 facing the Y-axis direction and one side wall 112 facing the X-axis direction of the side walls of the inner tank 11. Further, the other second nozzle 40 is arranged close to the other side wall 113 facing the Y-axis direction and the other side wall 114 facing the X-axis direction among the side walls of the inner tank 11. In this way, the two second nozzles 40 are arranged so as to surround the four sides of the plurality of substrates W in a plan view.

As shown in FIG. 3, the first discharge unit 41 is arranged on the side of the plurality of substrates W. Specifically, the first discharge portion 41 is arranged outside the substrate W with respect to the virtual vertical line L2 in contact with the peripheral edge portion of the substrate W. The first discharge unit 41 discharges the temperature-controlled etching solution vertically upward from the plurality of first discharge ports 411.

In this way, by preventing the temperature-adjusted etching solution discharged from the first discharge unit 41 from being directly supplied to the substrate W, it is possible to suppress the temperature of the substrate W from rising locally.

The second temperature sensor 80 is arranged vertically above the first discharge unit 41. Specifically, for example, the second temperature sensor 80 is arranged above the center line L1 of the substrate W and outside the vertical line L2. The second temperature sensor 80 detects the temperature of the etching solution at such a position as the temperature of the etching solution at the second position.

As shown in FIG. 4, the second discharge unit 42 is arranged in front of and behind the plurality of substrates W1. Specifically, one of the two second discharge portions 42 is arranged on the Y-axis negative direction side with respect to the substrate W1 located at the head of the plurality of substrates W. Further, the other of the two second discharge portions 42 is arranged on the Y-axis positive direction side with respect to the substrate W2 located at the end of the plurality of substrates W. In this way, the second discharge unit 42 is arranged outside the arrangement direction with respect to the substrate located at the beginning or the end of the plurality of substrates W. The second discharge unit 42 discharges the temperature-controlled etching solution vertically upward from the plurality of second discharge ports 421.

In this way, by preventing the temperature-adjusted etching solution discharged from the second discharge unit 42 from being directly supplied to the substrate W, it is possible to suppress the temperature of the substrate W from rising locally.

The second temperature sensor 80 is arranged vertically above the second discharge unit 42. That is, the second temperature sensor 80 is arranged above the connection portion (L-shaped corner portion) of the first discharge portion 41 and the second discharge portion 42. In other words, the second temperature sensor 80 is arranged close to one of the four corners of the inner tank 11 in a plan view.

In this way, the first discharge unit 41 and the second discharge unit 42 supply the temperature-adjusted etching solution toward the second temperature sensor 80 arranged at the second position.

The control unit 5 controls the temperature adjusting unit 52 so that the temperature detected by the second temperature sensor 80 approaches a preset temperature, for example.

For example, suppose that a temperature difference occurs in the etching solution in the vertical direction in the inner tank 11 and the detection temperature of the second temperature sensor 80 drops. In this case, the control unit 5 increases the output of the temperature adjusting unit 52 to raise the temperature of the etching solution supplied from the first nozzle 30. As a result, a relatively high-temperature etching solution is supplied to the lower part of the substrate W located in the vicinity of the first nozzle 30, which causes the lower part of the substrate W to be excessively etched as compared with other parts. That is, the in-plane uniformity of etching of the substrate W is lowered.

On the other hand, in the substrate processing apparatus 1 according to the embodiment, the second nozzle 40 is arranged at a position higher than the first nozzle 30, and the temperature-controlled etching solution is supplied upward from the second nozzle 40. I decided. As a result, the detection temperature of the second temperature sensor 80 can be raised earlier than in the case where the temperature-adjusted etching solution is supplied only from the first nozzle 30.

By raising the detection temperature of the second temperature sensor 80 at an early stage, it is possible to prevent the output of the temperature adjusting unit 52 from rising too much. Therefore, it is possible to prevent the lower portion of the substrate W from being excessively etched. That is, it is possible to suppress a decrease in in-plane uniformity of etching of the substrate W.

As described above, in the substrate processing apparatus 1 according to the embodiment, by using the second nozzle 40, the temperature difference in the vertical direction of the etching solution in the inner tank 11 can be eliminated at an early stage. Therefore, according to the substrate processing apparatus 1 according to the embodiment, the temperature uniformity of the etching solution in the inner tank 11 can be improved. Further, as a result, the increase in the output of the temperature adjusting unit 52 is suppressed, so that the decrease in the in-plane uniformity of the etching of the substrate W can be suppressed.

Further, according to the substrate processing apparatus 1 according to the embodiment, the temperature-controlled etching solution is discharged from the second nozzle 40 toward the second temperature sensor 80, so that the detection temperature of the second temperature sensor 80 can be set earlier. Can be raised to. Therefore, an increase in the output of the temperature adjusting unit 52 can be suitably suppressed.

<Specific operation of board processing equipment>
Next, the specific operation of the substrate processing apparatus 1 will be described with reference to FIG. FIG. 5 is a flowchart showing a procedure of processing executed by the substrate processing apparatus 1 according to the first embodiment. Each processing procedure shown in FIG. 5 is executed according to the control of the control unit 5.

Before the start of the series of treatments shown in FIG. 5, the temperature-controlled etching solution is stored in the inner tank 11 in advance. Further, a state in which the temperature-adjusted etching solution is supplied to the inner tank 11 from the plurality of first nozzles 30, in other words, the temperature-adjusted etching solution is supplied to the first nozzle 30, the inner tank 11, the outer tank 12, and the first. It is in a state of circulating in the supply path 50. The supply of the temperature-controlled etching solution from the first nozzle 30 is continued until at least the series of processes shown in FIG. 5 is completed.

As shown in FIG. 5, the substrate processing apparatus 1 first starts supplying the temperature-controlled etching solution from the second nozzle 40 (step S101). Specifically, the control unit 5 controls the flow rate regulator 61 to open the on-off valve of the flow rate regulator 61. As a result, the temperature-controlled etching solution flowing through the first supply path 50 is supplied to the second nozzle 40 via the second supply path 60. Then, the temperature-controlled etching solution is discharged from the plurality of first discharge ports 411 and the plurality of second discharge ports 421 provided in the second nozzle 40 into the inner tank 11.

Subsequently, a plurality of substrates W forming one lot are carried into the inner tank 11 (step S102). Specifically, the control unit 5 controls the elevating mechanism 20 to lower the plurality of substrates W held by the elevating mechanism 20 toward the inner tank 11. As a result, the plurality of substrates W are in a state of being arranged at the immersion position in the inner tank 11.

While the temperature of the etching solution in the inner tank 11 is heated by the temperature adjusting unit 52, the temperature of the plurality of substrates W is about room temperature. Therefore, when a plurality of substrates W are carried into the inner tank 11 in step S102, the temperature of the etching solution in the inner tank 11 is lowered.

Therefore, in the substrate processing apparatus 1 according to the embodiment, before immersing the plurality of substrates W in the etching solution stored in the inner tank 11 (step S102), the temperature-adjusted etching solution is supplied by the second nozzle 40. It was decided to start (step S101).

In this way, by supplying the temperature-adjusted etching solution from the second nozzle 40 before the temperature of the etching solution drops, it is possible to suppress the drop in the detection temperature of the second temperature sensor 80. In addition, the time required for the detected temperature to return to the normal value can be shortened. As a result, the output of the temperature adjusting unit 52 can be prevented from increasing too much, and it is possible to prevent the lower portion of the substrate W from being excessively etched as compared with other portions. That is, it is possible to suppress a decrease in in-plane uniformity of etching of the substrate W.

Subsequently, in the control unit 5, the difference between the temperature of the etching solution at the first position detected by the first temperature sensor 70 and the temperature of the etching solution at the second position detected by the second temperature sensor 80 is equal to or less than the threshold value. It is determined whether or not the result is (step S103). The control unit 5 repeats the determination process in step S103 until the temperature difference becomes equal to or less than the threshold value (steps S103, No). During this period, the temperature-controlled etching solution is continuously supplied by the second nozzle 40.

On the other hand, when it is determined in step S103 that the temperature difference is equal to or less than the threshold value (step S103, Yes), the control unit 5 stops the supply of the temperature-adjusted etching solution by the second nozzle 40 (step S104). ..

Subsequently, the control unit 5 determines whether or not the temperature difference exceeds the threshold value (step S105). In this process, when it is determined that the temperature difference exceeds the threshold value (step S105, Yes), the control unit 5 restarts the supply of the temperature-adjusted etching solution by the second nozzle 40 (step S106). The process proceeds to step S103.

On the other hand, in step S105, when the temperature difference does not exceed the threshold value (step S105, No), the control unit 5 determines whether or not the etching process of the plurality of substrates W is completed (step S107). For example, the control unit 5 may complete the etching process of the plurality of substrates W when a predetermined time has elapsed since the plurality of substrates W were carried into the inner tank 11 in step S102.

If the etching process of the plurality of substrates W is not completed in step S107 (step S107, No), the control unit 5 returns the process to step S105. On the other hand, when it is determined that the etching process of the plurality of substrates W has been completed (step S107, Yes), the control unit 5 controls the elevating mechanism 20 to raise the plurality of substrates W, thereby causing a plurality of substrates W from the inner tank 11. The substrate W is carried out (step S108), and a series of substrate processing is completed.

In the example of FIG. 5, in steps S101 and S106, the discharge flow rate of the temperature-adjusted etching solution from the second nozzle 40 is increased from 0. Not limited to this, in steps S101 and S106, the control unit 5 changes the discharge flow rate of the temperature-adjusted etching solution from the second nozzle 40 from the first flow rate (> 0) to the second flow rate (> first flow rate). It may be increased. Further, in this case, the control unit 5 may reduce the discharge flow rate of the temperature-adjusted etching liquid from the second nozzle 40 from the second flow rate to the first flow rate in step S104.

As described above, in the substrate processing apparatus 1 according to the embodiment, when the difference between the temperature of the etching solution at the first position and the temperature of the etching solution at the second position exceeds the threshold value, the substrate processing apparatus 1 is supplied from the second nozzle 40. It was decided to increase the flow rate of the temperature-controlled etching solution. Thereby, the temperature uniformity of the etching solution in the inner tank 11 can be improved.

FIG. 6 is a diagram for explaining an example of the control process of the liquid feeding mechanism 51. In the substrate processing apparatus 1 according to the embodiment, the second supply path 60 branches from the first supply path 50 and is connected to the second nozzle 40. Therefore, when the driving pressure of the liquid feeding mechanism 51 is constant, the discharge flow rate of the first nozzle 30 decreases by opening the on-off valve of the flow rate regulator 61 and starting the discharge from the second nozzle 40. It becomes.

Therefore, as shown in FIG. 6, even if the control unit 5 increases the driving pressure of the liquid feeding mechanism 51 when the on-off valve of the flow rate regulator 61 is opened to start the discharge from the second nozzle 40. good. As a result, it is possible to prevent the discharge flow rate of the first nozzle 30 from decreasing.

Further, by increasing the driving pressure of the liquid feeding mechanism 51, the total discharge flow rate of the temperature-adjusted etching liquid supplied into the inner tank 11 increases. As a result, the temperature difference of the etching solution in the vertical direction in the inner tank 11 can be reduced at an early stage while keeping the output of the temperature adjusting unit 52 constant.

<First modification>
Next, a modified example of the substrate processing apparatus 1 according to the first embodiment will be described with reference to FIG. 7. FIG. 7 is a diagram showing a configuration of a substrate processing apparatus according to the first modification. In FIG. 7, the configurations of the supply unit, the control unit 5, and the like of various processing liquids connected to the outer tank 12 are omitted.

In the first embodiment described above, an example in which the second supply path 60 branches from the first supply path 50 and is connected to the second nozzle 40 has been described, but as shown in FIG. 7, the second supply path has been described. 60A may be a route independent of the first supply path 50.

As shown in FIG. 7, one end of the second supply path 60A included in the substrate processing device 1A is connected to the outer tank 12, and the other end is connected to a plurality of second nozzles 40. The second supply path 60A is provided with a liquid feeding mechanism 63, a flow rate regulator 61, a temperature adjusting unit 64, and a filter 62 in this order from the upstream (outer tank 12 side). The liquid feeding mechanism 63 is, for example, a vacuum pump or the like, and feeds the etching liquid in the second supply path 60A downstream. The temperature adjusting unit 64 is, for example, a sheathed heater or the like, and adjusts the temperature of the etching solution flowing through the second supply path 60A.

In this way, the first supply path 50 and the second supply path 60A may be independent. In this case, for example, the control unit 5 controls the

temperature adjusting units

52 and 64 to raise the temperature of the etching solution discharged from the second nozzle 40 to be higher than the temperature of the etching solution discharged from the first nozzle 30. You may. As a result, the temperature difference of the etching solution in the vertical direction in the inner tank 11 can be reduced earlier.

Further, the control unit 5 may control the temperature adjustment unit 52 based on the detection temperature of the first temperature sensor 70, and may control the temperature adjustment unit 64 based on the detection temperature of the second temperature sensor 80. For example, the control unit 5 controls the temperature adjusting unit 52 based on the detection temperature of the first temperature sensor 70 so that the temperature of the etching solution at the first position approaches a preset temperature. Similarly, the control unit 5 controls the temperature adjusting unit 52 based on the detection temperature of the second temperature sensor 80 so that the temperature of the etching solution at the second position approaches a preset temperature. By doing so, the temperature difference of the etching solution in the vertical direction in the inner tank 11 can be reduced.

(Second Embodiment)
By the way, since the upper part of the inner tank 11 is open, the temperature of the etching liquid stored in the inner tank 11 tends to be relatively low in the vicinity of the liquid surface exposed to the outside atmosphere.

As described above, an upward liquid flow is formed in the inner tank 11. A part of the etching liquid that has risen to the vicinity of the liquid level of the inner tank 11 due to this liquid flow overflows to the outer tank 12, but the remaining part becomes a downward flow and flows again toward the lower part in the inner tank 11. ..

The downward flow is formed by the etching solution cooled near the liquid surface. Therefore, the temperature of the etching solution may decrease in the region where the downward flow passes, and the etching amount of the substrate W located in this region may decrease. Therefore, a technique is expected to reduce the temperature difference of the etching solution in the vertical direction of the inner tank 11, specifically, to suppress the temperature decrease of the etching solution in the vicinity of the liquid surface.

FIG. 8 is a diagram showing the configuration of the substrate processing apparatus according to the second embodiment. As shown in FIG. 8, in the substrate processing apparatus 1B according to the second embodiment, the plurality of second nozzles 40B are stored above the center line L1 of the plurality of substrates W arranged at the immersion position and in the inner tank 11. It is arranged below the liquid level of the etching solution. Then, the plurality of second nozzles 40B discharge the temperature-controlled etching liquid toward the liquid surface of the etching liquid stored in the inner tank 11.

FIG. 9 is a plan view of the inner tank 11 according to the second embodiment as viewed from above. Further, FIG. 10 is a cross-sectional view of the inner tank 11 according to the second embodiment as viewed from the negative direction of the Y axis to the positive direction of the Y axis of FIG.

As shown in FIG. 9, the second nozzle 40B has a first discharge portion 41B extending along the arrangement direction (Y-axis direction) of the plurality of substrates W and a horizontal direction orthogonal to the arrangement direction of the plurality of substrates W. A second discharge portion 42B extending along (X-axis direction) is provided. The first discharge portion 41B is provided with a plurality of first discharge ports 411B along the Y-axis direction. Further, the second discharge portion 42B is provided with a plurality of second discharge ports 421B along the X-axis direction. Since the configuration of the second discharge unit 42B is the same as that of the second discharge unit 42 according to the first embodiment, the description thereof will be omitted here.

As shown in FIG. 10, the first discharge unit 41B is arranged on the side of the plurality of substrates W, and the temperature-adjusted etching solution is directed toward the liquid surface of the etching solution located above the plurality of substrates W. Discharge diagonally.

The first discharge unit 41B discharges the temperature-adjusted etching solution at an angle at which the temperature-adjusted etching solution is not directly supplied to the plurality of substrates W. Specifically, the discharge direction of the temperature-adjusted etching liquid discharged from the plurality of first discharge ports 411B is inclined toward the substrate W side with respect to the vertical straight line L3 extending vertically upward from the first discharge port 411B. Further, the discharge direction of the temperature-adjusted etching liquid discharged from the plurality of first discharge ports 411B is more upright than the tangent line L4 of the substrate W passing through the first discharge port 411B.

In this way, by preventing the temperature-adjusted etching solution discharged from the first discharge unit 41B from being directly supplied to the substrate W, it is possible to suppress the temperature of the substrate W from rising locally.

Next, the specific operation of the substrate processing apparatus 1B according to the second embodiment will be described. First, the flow rate control process of the temperature-adjusted etching solution from the second nozzle 40B will be described with reference to FIG. FIG. 11 is a flowchart showing the procedure of the flow rate control process according to the second embodiment. The process shown in FIG. 11 is continued from, for example, a plurality of substrates W being carried into the inner tank 11 until being carried out.

As shown in FIG. 11, the control unit 5 determines the temperature of the etching solution at the first position detected by the first temperature sensor 70 and the temperature of the etching solution at the second position detected by the second temperature sensor 80. It is determined whether or not the difference has changed (step S201). If the steam temperature difference has not changed (steps S201, No), the control unit 5 returns the process to step S201 and repeats the determination process of step S201.

When it is determined in step S201 that the temperature difference has changed (steps S201, Yes), the control unit 5 sets the discharge flow rate of the second nozzle 40B according to the temperature difference so that the temperature difference becomes small. Change (step S202).

The discharge flow rate of the second nozzle 40B is changed by controlling the flow rate regulator 61 provided in the second supply path 60 and changing the opening degree of the adjusting valve provided in the flow rate regulator 61.

For example, the control unit 5 may change the opening degree of the adjusting valve according to the equation _{{1- (t 0 −} t ₁ ) / t _{0} · X.} In the above equation, t ₀ is the set temperature difference and t ₁ is the current temperature difference.

The set temperature difference is a preset temperature difference. For example, when the opening degree of the adjusting valve is set to the set opening degree described later, the temperature difference that can be eliminated by the discharge of the temperature-adjusted etching liquid from the second nozzle 40B is set as the set _{temperature difference t 0.} The current temperature difference is the temperature (ta-tb) obtained by subtracting the detection temperature (tb) of the second temperature sensor 80 from the detection temperature (ta) of the first temperature sensor 70.

Also, in the above formula, X is the set opening degree. The set opening degree is a preset opening degree of the adjusting valve. For example, 100%, which is the maximum value of the opening degree, is set as the set opening degree.

For example, when the set temperature difference is 2 ° C. and the current temperature difference is 0 ° C., the opening degree of the adjusting valve is 0% based on the above formula. That is, if there is no difference between the temperature of the etching solution at the first position and the etching temperature at the second position, the temperature-adjusted etching solution is not supplied from the second nozzle 40B.

On the other hand, when the set temperature difference is 2 ° C and the current temperature difference is 0.5 ° C, the opening degree of the adjusting valve is 25% based on the above formula. Further, when the current temperature difference is 1 ° C., the opening degree of the adjusting valve is 50%.

In this way, the control unit 5 may control the adjustment valve so that the opening degree of the adjustment valve increases as the temperature difference of the etching solution between the first position and the second position increases. Thereby, the temperature difference of the etching solution between the first position and the second position can be suitably reduced.

Next, the control process of the temperature adjusting unit 52 will be described with reference to FIG. FIG. 12 is a flowchart showing the procedure of the temperature control process according to the second embodiment. The process shown in FIG. 12 is continued from, for example, a plurality of substrates W being carried into the inner tank 11 until being carried out.

As shown in FIG. 12, the control unit 5 determines whether or not the difference between the detection temperature (first temperature) of the first temperature sensor 70 and the detection temperature (second temperature) of the second temperature sensor 80 is equal to or less than the threshold value. Is determined (step S301).

In this determination, when it is determined that the temperature difference is equal to or less than the threshold value (step S301, Yes), the control unit 5 controls the temperature adjusting unit 52 based on the average value of the first temperature and the second temperature (step). S302). Specifically, the control unit 5 controls the temperature adjusting unit 52 so that the average value of the first temperature and the second temperature approaches a preset temperature.

On the other hand, when the temperature difference exceeds the threshold value (step S301, No), the control unit 5 controls the temperature adjusting unit 52 based only on the first temperature of the first temperature and the second temperature (step S303). ). Specifically, the control unit 5 controls the temperature adjusting unit 52 so that the first temperature approaches a preset temperature.

In step S302, the control unit 5 may control the temperature adjustment unit 52 based on at least both the first temperature and the second temperature, and the value to be referred to is not necessarily the average value of the first temperature and the second temperature. It doesn't need to be. For example, the control unit 5 may control the temperature adjustment unit 52 based on the total value of the first temperature and the second temperature.

As described above, when the difference between the first temperature and the second temperature is equal to or less than the threshold value, the control unit 5 controls 52 the temperature adjusting unit based on both the first temperature and the second temperature to set the threshold value. If it exceeds, the temperature adjusting unit 52 may be controlled based only on the first temperature. The first temperature is less likely to drop and is more stable than the second temperature. Therefore, when the difference between the first temperature and the second temperature exceeds the threshold value, the temperature adjusting unit 52 is controlled based only on the first temperature, based on both the first temperature and the second temperature. It is possible to prevent the output of the temperature adjusting unit 52 from increasing too much as compared with the case of controlling. Therefore, it is possible to prevent the lower portion of the substrate W from being excessively etched as compared with other portions. That is, it is possible to suppress a decrease in in-plane uniformity of etching of the substrate W.

(Third Embodiment)
The substrate processing apparatus may include a lid that closes the upper portion of the inner tank 11. This point will be described with reference to FIGS. 13 to 15. FIG. 13 is a diagram showing a configuration of a substrate processing apparatus according to a third embodiment. FIG. 14 is a view of the lid body according to the third embodiment as viewed from below. FIG. 15 is a view of the lid body according to the third embodiment as viewed from the positive direction of the X-axis to the negative direction of the X-axis of FIG.

As shown in FIG. 13, the substrate processing apparatus 1C according to the third embodiment includes a pair of

lids

90, 90. The pair of

lids

90, 90 closes the upper opening of the inner tank 11. Each lid 90 is connected to an opening / closing mechanism 95. The opening / closing mechanism 95 can move the lid 90 between the closed position where the inner tank 11 is closed and the open position where the inner tank 11 is opened.

By closing the upper opening of the inner tank 11 using the pair of

lids

90, 90 in this way, it is possible to suppress a temperature drop in the vicinity of the liquid level of the etching solution stored in the inner tank 11.

As shown in FIGS. 14 and 15, the lid 90 has a plurality of grooves 91 on the lower surface. The plurality of grooves 91 extend along a horizontal direction (X-axis direction) orthogonal to the arrangement direction of the plurality of substrates W, for example.

In the closed position, the lower part of the lid 90 is in contact with the etching solution stored in the inner tank 11. Therefore, by forming a plurality of grooves 91 on the lower surface of the lid 90 which is the liquid contact surface with the etching liquid, the liquid flow of the etching liquid formed in the inner tank 11 is moved to the outside of the inner tank 11, that is, the outer tank. It can be easily discharged to 12. As a result, the downward flow is reduced, so that the decrease in temperature uniformity of the etching solution in the inner tank 11 due to the downward flow can be suppressed.

(Other embodiments)
In the substrate processing apparatus 1 according to the first embodiment and the substrate processing apparatus 1B according to the second embodiment, a temperature adjusting unit may be provided in the second supply path 60.

The substrate processing apparatus 1 according to the first embodiment may perform the flow rate control processing (see FIG. 11) and the temperature control processing (see FIG. 12) executed by the substrate processing apparatus 1B according to the second embodiment.

The substrate processing apparatus may include both the second nozzle 40 according to the first embodiment and the second nozzle 40B according to the second embodiment.

As described above, the substrate processing apparatus (as an example,

substrate processing apparatus

1, 1A to 1C) according to the embodiment includes a processing tank (as an example, the inner tank 11 of the processing tank 10) and a first nozzle (as an example). , The first nozzle 30), the second nozzle (for example, the

second nozzles

40 and 40B), and the flow rate control unit (for example, the control unit 5) are provided. In the treatment tank, a plurality of substrates (as an example, substrate W) are immersed in a treatment liquid (as an example, an etching liquid) for treatment. The first nozzle is arranged inside the treatment tank below the plurality of substrates, and supplies the temperature-controlled treatment liquid to the treatment tank. The second nozzle is arranged above the first nozzle inside the treatment tank, and supplies the temperature-controlled treatment liquid to the treatment tank. The flow control unit has the temperature of the processing liquid at the first position below the plurality of substrates and the second above the virtual center line (for example, the center line L1) that divides the plurality of substrates into upper and lower halves. When the difference from the temperature of the treatment liquid at the position exceeds the threshold value, the flow rate of the temperature-adjusted treatment liquid supplied from the second nozzle is increased.

Therefore, according to the substrate processing apparatus according to the embodiment, the temperature uniformity of the processing liquid in the processing tank can be improved.

The second nozzle (for example, the second nozzle 40) may be arranged above the first nozzle and below the center line, and the temperature-controlled processing liquid may be discharged toward the second position.

The second nozzle is located closer to the second position than the first nozzle. Therefore, by supplying the temperature-adjusted treatment liquid from the second nozzle toward the second position, the temperature of the treatment liquid at the second position can be raised at an early stage. That is, the temperature difference of the treatment liquid in the vertical direction in the treatment tank can be reduced at an early stage.

The second nozzle includes a plurality of first discharge ports (for example, the first discharge port 411) arranged along the arrangement direction of the plurality of substrates, and a plurality of nozzles arranged along the horizontal direction orthogonal to the arrangement direction. A second discharge port (for example, a second discharge port 421) may be provided. In this case, when the processing tank is viewed through along the arrangement direction, the plurality of first discharge ports are located outside the substrate rather than the virtual vertical line (for example, the vertical line L2) in contact with the peripheral edge of the substrate. The arranged and temperature-controlled treatment liquid may be discharged vertically upward. Further, the plurality of second discharge ports are arranged outside the arrangement direction from the substrate located at the beginning or the end of the plurality of substrates when the treatment tank is viewed through in the horizontal direction, and the temperature is adjusted. The treatment liquid may be discharged vertically upward.

In this way, by preventing the temperature-controlled etching solution discharged from the second nozzle from being directly supplied to the substrate, it is possible to suppress the temperature of the substrate from rising locally.

The flow rate control unit increases the flow rate of the temperature-adjusted treatment liquid supplied from the second nozzle before immersing the plurality of substrates in the treatment liquid stored in the treatment tank, and the temperature difference becomes equal to or less than the threshold value. In this case, the flow rate of the temperature-adjusted processing liquid supplied from the second nozzle may be reduced.

By supplying the temperature-adjusted treatment liquid from the second nozzle before the temperature of the treatment liquid drops, it is possible to suppress the temperature drop of the treatment liquid at the second position.

The second nozzle (for example, the second nozzle 40B) is arranged above the center line and below the liquid level of the treatment liquid stored in the treatment tank, and the temperature of the treatment liquid is adjusted toward the liquid level. It may be discharged.

As a result, it is possible to suppress a temperature drop of the etching solution near the liquid surface where the temperature tends to be relatively low. Therefore, the temperature uniformity of the treatment liquid in the treatment tank can be improved.

The second nozzle includes a plurality of first discharge ports (for example, the first discharge port 411B) arranged along the arrangement direction of the plurality of substrates, and a plurality of nozzles arranged along the horizontal direction orthogonal to the arrangement direction. A second discharge port (for example, a second discharge port 421B) may be provided. In this case, the plurality of second discharge ports are arranged outside the arrangement direction from the substrate located at the beginning or the end of the plurality of substrates when the treatment tank is viewed through in the horizontal direction, and the temperature is adjusted. The treated liquid may be discharged vertically upward. Further, the discharge direction of the temperature-adjusted processing liquid discharged from the plurality of first discharge ports is more inclined toward the substrate than vertically above when the treatment tank is viewed through the arrangement direction, and is the first. 1 It may stand up from the tangent line of the substrate passing through the discharge port.

The substrate processing apparatus according to the embodiment includes a first supply path (for example, a first supply path 50), a temperature adjusting unit (for example, a temperature adjusting unit 52), and a first temperature sensor (for example, a first temperature). A sensor 70), a second temperature sensor (for example, a second temperature sensor 80), a second supply path (for example, a second supply path 60), and a regulating valve (for example, a flow rate regulator 61). You may have it. The first supply path is connected to the first nozzle and supplies the temperature-controlled processing liquid to the first nozzle. The temperature adjusting unit is provided in the first supply path and adjusts the temperature of the processing liquid flowing through the first supply path. The first temperature sensor is provided downstream of the temperature adjusting unit in the first supply path, and detects the temperature of the processing liquid flowing through the first supply path as the temperature of the processing liquid at the first position. The second temperature sensor detects the temperature of the processing liquid at the second position. The second supply path is connected to the second nozzle and supplies the temperature-controlled processing liquid to the second nozzle. The adjusting valve is provided in the second supply path and adjusts the opening degree of the second supply path. In this case, the flow rate control unit adjusts the adjusting valve so that the larger the difference between the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor, the larger the opening degree of the adjusting valve. It may be controlled. Thereby, the temperature difference of the treatment liquid between the first position and the second position can be suitably reduced.

The substrate processing apparatus according to the embodiment may be provided in the first supply path and may include a liquid feeding mechanism for sending the processing liquid inside the first supply path downstream. Further, the second supply path may be branched from the first supply path downstream of the temperature adjusting unit. In this case, the flow rate control unit may control the liquid feeding mechanism to increase the driving pressure of the liquid feeding mechanism when the opening degree of the adjusting valve is increased.

The substrate processing apparatus according to the embodiment may include a temperature control unit that controls the temperature adjustment unit. Further, the second supply path may be branched from the first supply path downstream of the temperature adjusting unit. In this case, the temperature control unit controls the temperature adjustment unit based on both the first temperature and the second temperature when the temperature difference is equal to or less than the threshold value, and when the temperature difference exceeds the threshold value, the temperature control unit controls the temperature adjustment unit. , The temperature adjusting unit may be controlled based only on the first temperature out of the first temperature and the second temperature.

The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. Moreover, the above-described embodiment may be omitted, replaced or changed in various forms without departing from the scope of the appended claims and the purpose thereof.

W Substrate 1 Substrate processing device 10 Processing tank 11 Inner tank 12 Outer tank 20 Elevating mechanism 30 1st nozzle 40 2nd nozzle 50 1st supply path 51 Liquid supply mechanism 52 Temperature regulator 53 Filter 60 2nd supply path 61 Flow regulator 62 Filter 70 1st temperature sensor 80 2nd temperature sensor

Claims

A processing tank in which a plurality of substrates are immersed in a processing liquid for processing,
A first nozzle arranged inside the treatment tank below the plurality of substrates and supplying the temperature-controlled treatment liquid to the treatment tank.
A second nozzle arranged above the first nozzle inside the treatment tank and supplying the temperature-controlled treatment liquid to the treatment tank.
The difference between the temperature of the treatment liquid at the first position below the plurality of substrates and the temperature of the treatment liquid at the second position above the virtual center line that divides the plurality of substrates into upper and lower halves. A substrate processing apparatus including a flow rate control unit that increases the flow rate of the temperature-adjusted processing liquid supplied from the second nozzle when the value exceeds a threshold value.
The substrate treatment according to claim 1, wherein the second nozzle is arranged above the first nozzle and below the center line, and discharges the temperature-controlled treatment liquid toward the second position. Device.
The second nozzle
A plurality of first discharge ports arranged along the arrangement direction of the plurality of substrates, and
It is provided with a plurality of second discharge ports arranged along the horizontal direction orthogonal to the arrangement direction.
The plurality of first discharge ports are arranged outside the substrate and temperature-controlled with respect to a virtual vertical line in contact with the peripheral edge of the substrate when the treatment tank is viewed through along the arrangement direction. Discharge the treatment liquid vertically upward to
When the processing tank is viewed through along the horizontal direction, the plurality of second discharge ports are arranged outside the arrangement direction with respect to the substrate located at the beginning or the end of the plurality of substrates. The substrate processing apparatus according to claim 2, wherein the temperature-controlled processing liquid is discharged vertically upward.
The flow rate control unit increases the flow rate of the temperature-adjusted treatment liquid supplied from the second nozzle before immersing the plurality of substrates in the treatment liquid stored in the treatment tank, and causes the difference. The substrate processing apparatus according to any one of claims 1 to 3, wherein the flow rate of the temperature-adjusted processing liquid supplied from the second nozzle is reduced when is equal to or less than the threshold value.
The second nozzle is arranged above the center line and below the liquid level of the treatment liquid stored in the treatment tank, and discharges the treatment liquid whose temperature has been adjusted toward the liquid level. The substrate processing apparatus according to claim 1.
The second nozzle
A plurality of first discharge ports arranged along the arrangement direction of the plurality of substrates, and
It is provided with a plurality of second discharge ports arranged along the horizontal direction orthogonal to the arrangement direction.
The plurality of second discharge ports are arranged outside the arrangement direction with respect to the substrate located at the beginning or the end of the plurality of substrates when the processing tank is viewed through along the horizontal direction. The temperature-controlled treatment liquid is discharged vertically upward, and the temperature-controlled treatment liquid is discharged vertically upward.
The discharge direction of the temperature-adjusted processing liquid discharged from the plurality of first discharge ports is inclined toward the substrate side rather than vertically above when the treatment tank is viewed through the arrangement direction. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus stands up from the tangent line of the substrate passing through the first discharge port.
A first supply path connected to the first nozzle and supplying the temperature-controlled treatment liquid to the first nozzle, and
A temperature adjusting unit provided in the first supply path and adjusting the temperature of the processing liquid flowing through the first supply path, and a temperature adjusting unit.
A first temperature sensor provided downstream of the temperature adjusting unit in the first supply path and detecting the temperature of the processing liquid flowing through the first supply path as the temperature of the processing liquid at the first position.
A second temperature sensor that detects the temperature of the treatment liquid at the second position, and
A second supply path connected to the second nozzle and supplying the temperature-controlled treatment liquid to the second nozzle,
A regulating valve provided in the second supply path and adjusting the opening degree of the second supply path,
With
The flow rate control unit adjusts the adjusting valve so that the larger the difference between the first temperature detected by the first temperature sensor and the second temperature detected by the second temperature sensor, the larger the opening degree of the adjusting valve. The substrate processing apparatus according to any one of claims 1 to 6, which controls a valve.
A liquid feeding mechanism provided in the first supply passage and sending the treatment liquid inside the first supply passage to the downstream is provided.
The second supply path branches off from the first supply path downstream of the temperature control unit.
The substrate processing apparatus according to claim 7, wherein the flow rate control unit controls the liquid feeding mechanism to increase the driving pressure of the liquid feeding mechanism when the opening degree of the adjusting valve is increased.
A temperature control unit for controlling the temperature adjustment unit is provided.
The second supply path branches off from the first supply path downstream of the temperature control unit.
The temperature control unit controls the temperature adjustment unit based on both the first temperature and the second temperature when the difference is equal to or less than the threshold value, and when the difference exceeds the threshold value. The substrate processing apparatus according to claim 7, wherein the temperature adjusting unit is controlled based only on the first temperature of the first temperature and the second temperature.
The process of immersing a plurality of substrates in the treatment liquid stored in the treatment tank, and
A step of supplying the temperature-controlled treatment liquid to the treatment tank from a first nozzle arranged below the plurality of substrates inside the treatment tank.
The difference between the temperature of the treatment liquid at the first position below the plurality of substrates and the temperature of the treatment liquid at the second position above the virtual center line that divides the plurality of substrates into upper and lower halves. Exceeds the threshold, the substrate includes a step of increasing the flow rate of the temperature-adjusted treatment liquid supplied from the second nozzle arranged above the first nozzle inside the treatment tank. Processing method.