JP2006186228A5 - - Google Patents
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- Publication number
- JP2006186228A5 JP2006186228A5 JP2004380369A JP2004380369A JP2006186228A5 JP 2006186228 A5 JP2006186228 A5 JP 2006186228A5 JP 2004380369 A JP2004380369 A JP 2004380369A JP 2004380369 A JP2004380369 A JP 2004380369A JP 2006186228 A5 JP2006186228 A5 JP 2006186228A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- laser diode
- diode chip
- tio
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 230000003287 optical effect Effects 0.000 claims 2
- 239000010409 thin film Substances 0.000 claims 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 230000001699 photocatalysis Effects 0.000 claims 1
- 239000011941 photocatalyst Substances 0.000 claims 1
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004380369A JP2006186228A (ja) | 2004-12-28 | 2004-12-28 | 半導体レーザダイオード |
| US11/314,243 US20060159146A1 (en) | 2004-12-28 | 2005-12-22 | Semiconductor laser diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004380369A JP2006186228A (ja) | 2004-12-28 | 2004-12-28 | 半導体レーザダイオード |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006186228A JP2006186228A (ja) | 2006-07-13 |
| JP2006186228A5 true JP2006186228A5 (enExample) | 2007-06-14 |
Family
ID=36683836
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004380369A Withdrawn JP2006186228A (ja) | 2004-12-28 | 2004-12-28 | 半導体レーザダイオード |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US20060159146A1 (enExample) |
| JP (1) | JP2006186228A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005088787A1 (ja) * | 2004-03-10 | 2005-09-22 | Matsushita Electric Industrial Co., Ltd. | コヒーレント光源および光学システム |
| JP4310352B2 (ja) | 2007-06-05 | 2009-08-05 | シャープ株式会社 | 発光デバイスおよび発光デバイスの製造方法 |
| JP2009267120A (ja) * | 2008-04-25 | 2009-11-12 | Mitsubishi Electric Corp | 光半導体装置 |
| JP5443356B2 (ja) | 2008-07-10 | 2014-03-19 | 株式会社東芝 | 半導体レーザ装置 |
| JP5352214B2 (ja) * | 2008-12-10 | 2013-11-27 | シャープ株式会社 | 発光素子、チップ及び発光素子の製造方法 |
| JP5411491B2 (ja) * | 2008-12-11 | 2014-02-12 | シャープ株式会社 | 発光素子 |
| US8565280B2 (en) | 2010-09-14 | 2013-10-22 | Sanyo Electric Co., Ltd. | Semiconductor laser element, semiconductor laser device, and optical apparatus employing the same |
| WO2019059164A1 (ja) * | 2017-09-19 | 2019-03-28 | 京セラ株式会社 | 発光素子収納用部材、アレイ部材および発光装置 |
| DE102020127450A1 (de) * | 2020-10-19 | 2022-04-21 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zur herstellung eines optoelektronischen bauelements |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1205245A4 (en) * | 1999-08-05 | 2005-01-19 | Toyoda Chuo Kenkyusho Kk | PHOTOCATALYTIC MATERIAL AND PHOTOCATALYTIC ARTICLE |
| JP2001119096A (ja) * | 1999-10-18 | 2001-04-27 | Fuji Photo Film Co Ltd | 半導体レーザー装置 |
-
2004
- 2004-12-28 JP JP2004380369A patent/JP2006186228A/ja not_active Withdrawn
-
2005
- 2005-12-22 US US11/314,243 patent/US20060159146A1/en not_active Abandoned