JP2006108654A - 無線チップ - Google Patents

無線チップ Download PDF

Info

Publication number
JP2006108654A
JP2006108654A JP2005260169A JP2005260169A JP2006108654A JP 2006108654 A JP2006108654 A JP 2006108654A JP 2005260169 A JP2005260169 A JP 2005260169A JP 2005260169 A JP2005260169 A JP 2005260169A JP 2006108654 A JP2006108654 A JP 2006108654A
Authority
JP
Japan
Prior art keywords
insulating film
chip
wiring
antenna
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2005260169A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006108654A5 (enExample
Inventor
Yutaka Shionoiri
豊 塩野入
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005260169A priority Critical patent/JP2006108654A/ja
Publication of JP2006108654A publication Critical patent/JP2006108654A/ja
Publication of JP2006108654A5 publication Critical patent/JP2006108654A5/ja
Withdrawn legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
JP2005260169A 2004-09-09 2005-09-08 無線チップ Withdrawn JP2006108654A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005260169A JP2006108654A (ja) 2004-09-09 2005-09-08 無線チップ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004263111 2004-09-09
JP2005260169A JP2006108654A (ja) 2004-09-09 2005-09-08 無線チップ

Publications (2)

Publication Number Publication Date
JP2006108654A true JP2006108654A (ja) 2006-04-20
JP2006108654A5 JP2006108654A5 (enExample) 2008-10-16

Family

ID=36377950

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005260169A Withdrawn JP2006108654A (ja) 2004-09-09 2005-09-08 無線チップ

Country Status (1)

Country Link
JP (1) JP2006108654A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010038599A1 (en) * 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2014515150A (ja) * 2011-05-17 2014-06-26 ジェムアルト エスアー ワイヤキャパシタ、特に無線周波数回路用のワイヤキャパシタ、およびそのワイヤキャパシタを備える装置
JP2016510510A (ja) * 2013-02-05 2016-04-07 深▲セン▼市華星光電技術有限公司 アレイ基板、表示装置、及びアレイ基板の製造方法
US9508742B2 (en) 2009-12-11 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having switching transistor that includes oxide semiconductor material
CN114864559A (zh) * 2018-05-14 2022-08-05 联发科技股份有限公司 半导体封装结构

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333740A (ja) * 1993-05-21 1994-12-02 Semiconductor Energy Lab Co Ltd 複合集積回路部品
JPH07140485A (ja) * 1993-07-14 1995-06-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001195010A (ja) * 2000-01-11 2001-07-19 Seiko Epson Corp 電気光学装置の製造方法及び電気光学装置
JP2002314028A (ja) * 2001-04-17 2002-10-25 Iep Technologies:Kk 半導体装置並びにその製造方法および実装構造
JP2004220591A (ja) * 2002-12-27 2004-08-05 Semiconductor Energy Lab Co Ltd カード及び前記カードを用いた記帳システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06333740A (ja) * 1993-05-21 1994-12-02 Semiconductor Energy Lab Co Ltd 複合集積回路部品
JPH07140485A (ja) * 1993-07-14 1995-06-02 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2001195010A (ja) * 2000-01-11 2001-07-19 Seiko Epson Corp 電気光学装置の製造方法及び電気光学装置
JP2002314028A (ja) * 2001-04-17 2002-10-25 Iep Technologies:Kk 半導体装置並びにその製造方法および実装構造
JP2004220591A (ja) * 2002-12-27 2004-08-05 Semiconductor Energy Lab Co Ltd カード及び前記カードを用いた記帳システム

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101611643B1 (ko) * 2008-10-01 2016-04-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2010038599A1 (en) * 2008-10-01 2010-04-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9196593B2 (en) 2008-10-01 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR20180099941A (ko) * 2009-12-11 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9508742B2 (en) 2009-12-11 2016-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having switching transistor that includes oxide semiconductor material
KR20170094559A (ko) * 2009-12-11 2017-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101770976B1 (ko) * 2009-12-11 2017-08-24 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US9893204B2 (en) 2009-12-11 2018-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having transistor including two oxide semiconductor layers having different lattice constants
KR101894821B1 (ko) * 2009-12-11 2018-09-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102046308B1 (ko) * 2009-12-11 2019-11-19 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
JP2014515150A (ja) * 2011-05-17 2014-06-26 ジェムアルト エスアー ワイヤキャパシタ、特に無線周波数回路用のワイヤキャパシタ、およびそのワイヤキャパシタを備える装置
JP2016510510A (ja) * 2013-02-05 2016-04-07 深▲セン▼市華星光電技術有限公司 アレイ基板、表示装置、及びアレイ基板の製造方法
CN114864559A (zh) * 2018-05-14 2022-08-05 联发科技股份有限公司 半导体封装结构

Similar Documents

Publication Publication Date Title
US8441099B2 (en) Wireless chip
JP4942998B2 (ja) 半導体装置及び半導体装置の作製方法
US7688272B2 (en) Semiconductor device
US7566633B2 (en) Semiconductor device and method for manufacturing the same
JP2025096323A (ja) 半導体装置
KR101381834B1 (ko) 반도체 장치 및 반도체 장치의 제작방법
US20140353758A1 (en) Semiconductor device
JP2007013120A (ja) 半導体装置
US20110104859A1 (en) Manufacturing method of semiconductor device
JP5144313B2 (ja) 半導体装置
JP2006108654A (ja) 無線チップ
JP5179849B2 (ja) 半導体装置
JP2007273968A (ja) 半導体装置及びその作製方法

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080903

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080903

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20111111

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111122

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111226

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120117

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20120404