JP2006093552A5 - - Google Patents

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Publication number
JP2006093552A5
JP2006093552A5 JP2004279365A JP2004279365A JP2006093552A5 JP 2006093552 A5 JP2006093552 A5 JP 2006093552A5 JP 2004279365 A JP2004279365 A JP 2004279365A JP 2004279365 A JP2004279365 A JP 2004279365A JP 2006093552 A5 JP2006093552 A5 JP 2006093552A5
Authority
JP
Japan
Prior art keywords
film
sheet resistance
confirmed
embedding
film formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004279365A
Other languages
English (en)
Japanese (ja)
Other versions
JP4783561B2 (ja
JP2006093552A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2004279365A external-priority patent/JP4783561B2/ja
Priority to JP2004279365A priority Critical patent/JP4783561B2/ja
Priority to PCT/JP2005/016712 priority patent/WO2006035591A1/ja
Priority to DE112005002353T priority patent/DE112005002353B8/de
Priority to US11/663,807 priority patent/US8034403B2/en
Priority to KR1020077006967A priority patent/KR100934887B1/ko
Priority to CNB2005800325695A priority patent/CN100479114C/zh
Priority to KR1020087025866A priority patent/KR100934888B1/ko
Priority to TW094132164A priority patent/TW200620433A/zh
Publication of JP2006093552A publication Critical patent/JP2006093552A/ja
Publication of JP2006093552A5 publication Critical patent/JP2006093552A5/ja
Publication of JP4783561B2 publication Critical patent/JP4783561B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004279365A 2004-09-27 2004-09-27 銅配線の形成方法 Expired - Fee Related JP4783561B2 (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
JP2004279365A JP4783561B2 (ja) 2004-09-27 2004-09-27 銅配線の形成方法
KR1020087025866A KR100934888B1 (ko) 2004-09-27 2005-09-12 구리 배선의 형성 방법
DE112005002353T DE112005002353B8 (de) 2004-09-27 2005-09-12 Verfahren zur Herstellung von Sammelleitungen aus Kupfer
US11/663,807 US8034403B2 (en) 2004-09-27 2005-09-12 Method for forming copper distributing wires
KR1020077006967A KR100934887B1 (ko) 2004-09-27 2005-09-12 구리 배선의 형성 방법
CNB2005800325695A CN100479114C (zh) 2004-09-27 2005-09-12 铜配线的形成方法
PCT/JP2005/016712 WO2006035591A1 (ja) 2004-09-27 2005-09-12 銅配線の形成方法
TW094132164A TW200620433A (en) 2004-09-27 2005-09-16 Method of forming copper wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004279365A JP4783561B2 (ja) 2004-09-27 2004-09-27 銅配線の形成方法

Publications (3)

Publication Number Publication Date
JP2006093552A JP2006093552A (ja) 2006-04-06
JP2006093552A5 true JP2006093552A5 (https=) 2007-09-06
JP4783561B2 JP4783561B2 (ja) 2011-09-28

Family

ID=36118743

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004279365A Expired - Fee Related JP4783561B2 (ja) 2004-09-27 2004-09-27 銅配線の形成方法

Country Status (7)

Country Link
US (1) US8034403B2 (https=)
JP (1) JP4783561B2 (https=)
KR (2) KR100934887B1 (https=)
CN (1) CN100479114C (https=)
DE (1) DE112005002353B8 (https=)
TW (1) TW200620433A (https=)
WO (1) WO2006035591A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5323425B2 (ja) * 2007-09-03 2013-10-23 株式会社アルバック 半導体装置の製造方法
KR100914982B1 (ko) * 2008-01-02 2009-09-02 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
KR100924557B1 (ko) * 2008-01-04 2009-11-02 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
JP5353109B2 (ja) 2008-08-15 2013-11-27 富士通セミコンダクター株式会社 半導体装置の製造方法
KR100973277B1 (ko) 2008-08-29 2010-07-30 주식회사 하이닉스반도체 반도체 소자의 금속배선 및 그 형성방법
CN103135819A (zh) * 2011-11-29 2013-06-05 迎辉科技股份有限公司 具有抗氧化金属层的导电基板
JP6324800B2 (ja) * 2014-05-07 2018-05-16 東京エレクトロン株式会社 成膜方法および成膜装置
CN105986245A (zh) * 2015-02-16 2016-10-05 中微半导体设备(上海)有限公司 改善mocvd反应工艺的部件及改善方法
US11014814B2 (en) * 2016-07-27 2021-05-25 Dowa Thermotech Co., Ltd. Vanadium nitride film, and member coated with vanadium nitride film and method for manufacturing the same

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08222568A (ja) * 1995-02-10 1996-08-30 Ulvac Japan Ltd 銅配線製造方法、半導体装置、及び銅配線製造装置
JPH11217673A (ja) * 1997-11-28 1999-08-10 Japan Pionics Co Ltd 窒化膜の製造方法
JP2943805B1 (ja) * 1998-09-17 1999-08-30 日本電気株式会社 半導体装置及びその製造方法
JP2003522827A (ja) * 1998-11-12 2003-07-29 プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ 段差被覆率が改善された拡散バリア材料
KR100460746B1 (ko) * 1999-04-13 2004-12-09 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
JP5031953B2 (ja) * 2001-06-28 2012-09-26 株式会社アルバック 銅材料充填プラグ及び銅材料充填プラグの製造方法
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
WO2003038892A2 (en) * 2001-10-26 2003-05-08 Applied Materials, Inc. Atomic-layer-deposited tantalum nitride and alpha-phase tantalum as barrier layers for copper metallization
JP4120925B2 (ja) * 2002-01-31 2008-07-16 宇部興産株式会社 銅錯体およびこれを用いた銅含有薄膜の製造方法
JP2003252823A (ja) * 2002-02-28 2003-09-10 Mitsubishi Materials Corp 有機金属化学蒸着法用有機銅化合物及びそれを用いて作製した銅薄膜
CN100472739C (zh) * 2004-11-08 2009-03-25 Tel艾派恩有限公司 铜互连布线和形成铜互连布线的方法
JP5820267B2 (ja) * 2008-03-21 2015-11-24 プレジデント アンド フェローズ オブ ハーバード カレッジ 配線用セルフアライン（自己整合）バリア層

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