JP2006093213A - Manufacturing method of semiconductor element with adhesive layer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide the manufacturing method of a semiconductor element with an adhesive layer, in which stealth dicing method or dicing before grinding is used to reduce cracking or chipping of a wafer to obtain a semiconductor element with an adhesive film, resulting in improved productivity and workability in manufacturing of a semiconductor device. <P>SOLUTION: The manufacturing method of a semiconductor element with an adhesive layer includes a process in which a base material film 3, an adhesive layer 2, and a semiconductor wafer 1 are laminated in the order; a process in which the semiconductor wafer 1 is cut at prescribed positions to form a plurality of semiconductor elements; a process in which the base material film 3 is expanded in horizontal direction to form gaps among a plurality of semiconductor elements, for reforming or partially removing the adhesive layer present in the gap among the plurality of semiconductor elements when viewed from the semiconductor wafer 1 side; and a process for cutting the adhesive layer at the reformed part. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a semiconductor element with an adhesive layer.

  Conventionally, silver paste has been mainly used for joining a semiconductor chip and a support member such as a lead frame. However, with the recent miniaturization and high performance of semiconductor chips, the lead frames used are also required to be miniaturized and densified. With silver paste, squeezing and tilting of the semiconductor chip during wire bonding are required. The above-mentioned demands cannot be dealt with because of problems such as occurrence of defects, difficulty in controlling the film thickness of the adhesive layer, and generation of voids in the adhesive layer.

  Therefore, in recent years, instead of silver paste, an adhesive film (also referred to as a film-like adhesive, a film-like die-bonding material, etc.) has been used as a so-called individual piece attaching method or a wafer back surface attaching method. Yes. When a semiconductor device is manufactured by the former method of attaching individual pieces, an individual piece of adhesive film is cut out from a roll-like (reel-like) adhesive film by cutting or punching, and then the individual piece is attached to a lead frame. An element film (semiconductor chip) previously cut and separated (diced) in a dicing process is placed on a lead frame with an adhesive film and bonded (die-bonded) to produce a lead frame with a semiconductor chip. A semiconductor device is obtained through a wire bonding process, a sealing process, and the like. However, in this case, a dedicated assembly device that cuts out pieces of the adhesive film from the roll-like adhesive film and adheres it to the lead frame is required. Therefore, the manufacturing cost is higher than the method using silver paste. become.

  On the other hand, in the case of manufacturing a semiconductor device by the latter wafer back surface pasting method, an adhesive film is first pasted on the back surface of the semiconductor wafer, and further a dicing tape is pasted thereon, and then an adhesive film is attached by dicing. The semiconductor wafer is separated into individual pieces, and the individual pieces of the obtained semiconductor chip with an adhesive film are picked up and affixed to a lead frame. Thereafter, the semiconductor device is obtained through processes such as heating, curing, and wire bonding. In this method, in order to join the semiconductor chip with the adhesive film to the lead frame, an apparatus for separating the adhesive film into pieces is not required, and the conventional silver paste assembling apparatus is used as it is or a heating plate is added. Therefore, the manufacturing cost can be kept relatively low. Therefore, it is used as a method in which the manufacturing cost can be kept relatively low in the assembling method using the adhesive sheet.

  However, such individual piece attaching method and wafer back surface attaching method increase the manufacturing cost due to wear of the diamond blade, and chip cracking and chipping at the time of dicing due to the thinning of the wafer thickness tend to reduce the yield. I was invited.

In recent years, stealth dicing methods and tip dicing methods have been proposed as wafer cutting methods. The former, stealth dicing method is a method in which a modified portion is selectively formed inside the wafer by irradiating the wafer with laser light, and then the wafer is cut by stretching the dicing tape in the horizontal direction along the modified portion. Yes (see Patent Document 3, for example). This stealth dicing method has a yield improvement effect that reduces defects such as chipping, and because it does not require a cutting width (kerf width) that occurs when cutting with a diamond blade, it improves yield and improves dicing speed. There is a productivity improvement effect. Further, the latter, the prior dicing method, is a method in which the order of wafer fabrication is changed, a diamond blade is cut to the center of a thick wafer, and then the wafer is adjusted to a predetermined thickness by grinding and polishing. This prior dicing method can be handled by conventional equipment, and since it is an application of conventional technology, it is easy to apply and can also improve yield.
These two wafer cutting methods can cut only the wafer, and can be used as an application of the piece pasting method in the semiconductor device manufacturing method. However, since the wafer and the adhesive film cannot be cut at the same time, they could not be used as an application of the wafer back surface attaching method capable of obtaining a semiconductor element with an adhesive film.

Japanese Patent Laid-Open No. 7-045557 JP 2002-192370 A JP 2003-338467 A

  The above two dicing methods are wafer cutting methods, and the adhesive film cannot be cut simultaneously. Therefore, a semiconductor element with an adhesive film as in the wafer back surface attaching method could not be obtained. An object of the present invention is to provide a manufacturing method of a semiconductor device capable of obtaining a semiconductor element with an adhesive film by the two dicing methods and an adhesive film applicable to this manufacturing method.

  In order to achieve the above object, as a result of various studies, the present inventors have a structure in which a semiconductor wafer cut at a predetermined position, an adhesive film, and an adhesive tape are laminated in this order. Semiconductor device manufacturing method and manufacturing capable of obtaining a plurality of individual semiconductor elements with an adhesive film by modifying the adhesive film between them and cutting the adhesive film between the semiconductor element and the adjacent semiconductor element An adhesive film applicable to the method is provided.

That is, the present invention relates to the following inventions.
<1> a step of laminating a base film, an adhesive layer and a semiconductor wafer in this order;
Cutting a semiconductor wafer at a predetermined position to form a plurality of semiconductor elements;
Stretching the base film in a horizontal direction to form a gap between the plurality of semiconductor elements;
A step of modifying or removing a part of the adhesive layer present in a gap portion between the plurality of semiconductor elements as viewed from the semiconductor wafer side;
Cutting the adhesive layer at the modified portion;
The manufacturing method of the semiconductor element with an adhesive bond layer characterized by including these.
<2> The step of cutting the adhesive layer cuts the adhesive layer by stretching the base film at a rate of 10 to 1000 mm / second in the horizontal direction by 5 to 50 mm. <1> Of manufacturing a semiconductor element with an adhesive layer.
<3> The method for producing a semiconductor element with an adhesive layer according to <1>, wherein the modification is a modification in which the breaking strength of the adhesive layer is 30 MPa or less and the elongation at break is 40% or less. .
<4> The method for producing a semiconductor element with an adhesive layer according to <1>, wherein the modification is performed by reducing the thickness of the adhesive layer or removing the adhesive layer as compared with that before the modification. .
<5> A step of laminating a base film, an adhesive layer, and a semiconductor wafer in this order, a step of cutting the semiconductor wafer at a predetermined position to form a plurality of semiconductor elements, and the base film in the horizontal direction And a step of forming a gap between the plurality of semiconductor elements by stretching, and a step of removing an adhesive layer present in a gap portion between the plurality of semiconductor elements as viewed from the semiconductor wafer side. A method for manufacturing a semiconductor element with an adhesive layer.

  According to the method for manufacturing a semiconductor device and an adhesive film of the present invention, a semiconductor element with an adhesive film can be obtained while reducing wafer cracks and chips using a stealth dicing method or a tip dicing method. Productivity and workability are improved.

  As a manufacturing method of this invention, a process as shown in FIG. 1 is mentioned. FIG. 1 is a configuration diagram after cutting a wafer, which is a method for manufacturing a semiconductor device of the present invention. FIG. 1A is a top view of a structure in which an adhesive film and an adhesive tape are attached to a wafer that has already been cut at a predetermined position by a stealth dicing method or a tip dicing method. FIG. 1B is a side view of these structures. In FIG. 1, 1 is a semiconductor wafer, 2 is an adhesive layer, and 3 adhesive sheets. The pressure-sensitive adhesive sheet in FIG. 1 has a concentric circular shape with the semiconductor wafer, but is not limited to this shape. For example, the pressure-sensitive adhesive may be applied to the entire surface of the base material. Absent.

  First, an example of a step of laminating a base film, an adhesive layer, and a semiconductor wafer in this order, and a step of cutting a semiconductor wafer at a predetermined position to form a plurality of semiconductor elements will be described with reference to FIGS. To do.

  FIG. 2 shows a dicing method using a known dicing blade, and shows a side view of a state in which a gap is created between a semiconductor element and an adjacent semiconductor element by stretching the adhesive sheet horizontally with the wafer or adhesive film. . Further, FIG. 3 (a) shows a modified state of the adhesive film of the present invention. FIG. 3B is an enlarged view showing a state in which the adhesive film between the semiconductor element and the adjacent semiconductor element is modified using radiation irradiation, heating and cooling, or gas or a solvent from the upper surface of the wafer in this state. FIG. 3C is an enlarged view showing a state in which the film thickness of the adhesive film between the semiconductor elements and the adjacent semiconductor elements is similarly reduced by irradiation, heating and cooling from the upper surface of the wafer or using a gas or a solvent. is there. By pulling the adhesive film in the horizontal direction with the wafer or the adhesive film from the state shown in FIGS. 3B and 3C, the adhesive film can be cut to obtain a semiconductor element with the adhesive film as shown in FIG. .

  In the above lamination method, an adhesive film in which an adhesive layer is provided on a base film is prepared in advance, and a semiconductor wafer may be laminated thereon, or conversely, an adhesive layer is formed on the semiconductor wafer and dicing is performed thereon. Tapes may be attached together.

  Moreover, in FIGS. 1-4, although the dicing tape was used as a base film, it is what is called an integrated adhesive film which used the adhesive layer as an adhesive layer, and formed this on the base film, It goes without saying.

  The base film is preferably a film excellent in stretchability because it includes a step of stretching in the horizontal direction to form a gap between the plurality of semiconductor elements. Therefore, as a component used for the base film, a polyester film such as a polyethylene terephthalate film, a polytetrafluoroethylene film, a polyethylene film, a polypropylene film, a polymethylpentene film, a polyolefin film such as a polyvinyl acetate film, a polyvinyl chloride film, Plastic film such as polyimide film, paper, non-woven fabric, etc. can be used, but considering more stretchability, polyolefin film such as polyethylene film, polypropylene film, polymethylpentene film, polyvinyl acetate film, and polyvinyl chloride film are preferably used. It is done. Moreover, the thickness of a base film is 10-500 micrometers normally, Preferably it is 50-200 micrometers.

  Next, the base film is stretched in the horizontal direction to form gaps between the plurality of semiconductor elements.

  Next, the adhesive layer present in the gaps between the plurality of semiconductor elements as seen from the semiconductor wafer side is modified or partially removed. The manufacturing method of the present invention is characterized in that a gap is formed between semiconductor elements in the steps so far, and this is used as a mask to modify only a portion where the adhesive is exposed. Hereinafter, this process will be described in detail.

  Examples of the modification include changing the breaking elongation and breaking strength to specific values, and a thin film only in exposed portions. Examples of the means for reforming include irradiation, heating, cooling, dissolution with gas or solvent, and the like. These can be used alone or in combination of two or more.

  When changing the breaking elongation and breaking strength to specific values, it is preferable that the breaking strength is 30 MPa or less and the breaking elongation is 40% or less. Immediately after the modification, the adhesive film of the present invention tends to be unable to be cut by pulling when the breaking strength exceeds 30 MPa, and tends to be unable to be cut by pulling even when the elongation at break exceeds 40%. For this reason, the adhesive film after modification preferably has a breaking strength of 20 MPa or less, and more preferably 10 MPa or less. Similarly, the modified adhesive film preferably has a breaking elongation of 35% or less, more preferably 30% or less.

The breaking strength and breaking elongation of the adhesive film were measured for stress and strain curves at a pulling rate of 0.5 m / min using a tensile tester on a sample having a width of 10 mm, a distance between chucks of 20 mm, and a thickness of 1 to 250 μm. , Obtained by the following formula.
Breaking strength (Pa) = maximum strength (N) / cross-sectional area of sample (m ² )
Elongation at break (%) = (Length between chucks of sample at break (mm) −20) / 20 × 100

  In order to increase the breaking strength of the adhesive film, it is effective to increase the elastic modulus and increase the toughness of the material. Specifically, it is effective to add a small amount of rubber or the like in order to increase the elastic modulus by adding various fillers and to improve the toughness of the material. In order to reduce the breaking strength, it is effective to increase the addition amount of oligomers and monomers to reduce the breaking elongation of the film.

  In order to increase the elongation at break, it is effective to improve the flexibility and toughness of the material. For example, the amount of a high molecular weight component having a low Tg and a large molecular weight, and an oligomer or monomer having a softening point of less than 30 ° C. It is effective to increase the amount of added. In order to reduce the elongation at break, it is effective to decrease the toughness by increasing the amount of high molecular weight components having a softening point of 30 ° C. or higher, the amount of high-Tg high molecular weight components added, and fillers. is there.

The adhesive film may have UV curability by including an acrylic monomer having one or more unsaturated double bonds in the molecule and its photoinitiator, etc., and after elongation at low temperature, the elongation at break by UV irradiation It is possible to improve the breakability by reducing. Moreover, it is preferable that an adhesive film differs in transparency and a color tone from an adhesive tape at the point which recognizes the part which could not be cut | disconnected.
A semiconductor device capable of obtaining a plurality of individual semiconductor elements with an adhesive film by cutting with an irradiation film between a semiconductor element and an adjacent semiconductor element by modification with radiation irradiation, cooling, gas or solvent A manufacturing method is provided.

  That is, the present invention includes a semiconductor wafer and an adhesive film that are cut at a predetermined position by a stealth dicing method or a tip dicing method and divided into a plurality of semiconductor elements, an adhesive tape that fixes the wafer ring, a wafer, an adhesive film, It has a structure in which adhesive tapes are laminated in this order, and an adhesive film between a semiconductor element in this laminated structure and an adjacent semiconductor element is used to crack a wafer during dicing by using the semiconductor device manufacturing method of the present invention. In addition, the semiconductor device with an adhesive film can be obtained, and the workability and productivity in semiconductor device manufacturing are excellent.

Here, the adhesive film of the present invention provides an adhesive film that can be cut by stretching the adhesive tape by 5 to 50 mm at a rate of 10 to 1000 mm / sec after being modified by radiation irradiation, cooling, gas or solvent. As the pulling speed, the semiconductor element or the adhesive tape is not damaged, and it is necessary to pull the adhesive film within a range where the adhesive film is cut. The pulling speed is preferably 10 to 100 mm / sec, and more preferably 10 to 50 mm / sec. If it is less than 10 mm / sec, there is a tendency that the adhesive film cannot be cut, and if it exceeds 100 mm / sec, the pressure-sensitive adhesive tape tends to break. Moreover, it is necessary to pull in the range which an adhesive film does not damage as an amount of tension | pulling, and an adhesive film cut | disconnects, and it is preferable that it is 10-30 mm, and it is more preferable that it is 15-20 mm. If the amount of pulling is less than 5 mm, the adhesive film tends not to be cut, and if it exceeds 50 mm, the pressure-sensitive adhesive film tends to break.
Further, when the pulling amount exceeds 25 mm, a vinyl chloride tape is suitable as the base layer of the adhesive tape. However, when the pulling amount is 25 mm or less, a polyolefin tape is suitable as the base layer of the adhesive tape.

  Further, the adhesive film of the present invention is characterized in that the film thickness becomes thin or the film disappears immediately after irradiation, heating, cooling, reforming with gas or solvent. The adhesive film of the present invention is characterized by being cut by changing the film thickness. The change in film thickness is preferably 90% or less with respect to the original thickness, but is preferably 50% or less and more preferably 30% or less in order to make the cutting of the adhesive film easier. Further, when the adhesive film between the semiconductor elements adjacent to the semiconductor element is completely removed by radiation irradiation, heating, cooling, gas, or solvent, the adhesive film is actually cut, which is more preferable.

  The adhesive film is characterized by being modified to the above characteristic range immediately before being pulled by post-treatment such as irradiation with ultraviolet rays, infrared rays or microwaves, heating or cooling, or dissolution or melting with a gas or a solvent. However, it is more preferable if it is in the above characteristic range in the state before the reforming.

  In addition, a plurality of adhesive films of the present invention may be stacked to form a multilayer adhesive sheet as long as it can be cut. Further, the adhesive film of the present invention may be combined with a film made of, for example, a thermoplastic film, a pressure-sensitive adhesive, a thermosetting resin, etc., and the adhesive film may be overlapped on both surfaces of the film to form a multilayer adhesive film. In addition, the range which can be cut | disconnected means that the breaking strength and breaking elongation immediately after modification | reformation of the adhesive film made into the multilayer are in the said characteristic range. Examples of such films include films made of thermoplastic resins such as polyimide and polyester, epoxy resins, silicone resins, and mixtures thereof. These films may contain various fillers.

  The adhesive film of the present invention can maintain flexibility at room temperature when the elastic modulus by dynamic viscoelasticity measurement has a constant temperature and frequency dependence, and can also cut the adhesive sheet at the same time when cutting the wafer at room temperature. Is preferable because it can be applied at 40 to 100 ° C. The adhesive sheet of the present invention preferably has an elastic modulus of 1 to 3000 MPa as measured by dynamic viscoelasticity at 25 ° C. and 10 Hz, and preferably 10 to 1500 MPa, since the adhesive sheet is less likely to crack during handling. Preferably it is 100-1200 MPa. An elastic modulus of less than 1 MPa is not preferable because the adhesive sheet has a large elongation and is difficult to handle. An elastic modulus exceeding 3000 MPa is not preferable because cracks occur in the adhesive sheet during handling.

  Furthermore, it is preferable that the elasticity modulus by 25 degreeC 900Hz dynamic viscoelasticity measurement is 4000-20000 MPa, Preferably it is 5000-15000 MPa. If it is less than 4000 MPa, it tends to be difficult to cut, and if it exceeds 20000 MPa, cracks tend to occur during handling. Or it is preferable that the elasticity modulus by -20 degreeC 10-Hz dynamic viscoelasticity measurement is 4000-20000 MPa, More preferably, it is 5000-15000 MPa. If it is less than 4000 MPa, it tends to be difficult to cut, and if it exceeds 20000 MPa, cracks tend to occur during handling.

  Since this film has a small warpage of the wafer and good handleability at room temperature, it is preferably laminated on the wafer at a temperature of 0 to 100 ° C. Accordingly, the elastic modulus of the adhesive film as measured by dynamic viscoelasticity measurement at 60 ° C. and 10 Hz is preferably 0.1 to 20 MPa, more preferably 10 MPa or less, and further preferably 5 MPa or less. If the pressure is less than 0.1 MPa, the film may be peeled off from the wafer after the sticking or may be displaced.

  Moreover, it is preferable that the 90 degree peel strength in the B-stage state of the adhesive film of the present invention and the adhesive tape is 150 N / m or less, more preferably 5 to 100 N / m, and 5 to 50 N / m. More preferably it is. If the peel strength exceeds 100 N / m, the chip tends to break during pickup. The measurement of peel strength is the result when peeling was performed at an angle of 90 ° C. and a pulling speed of 50 mm / min in an atmosphere of 25 ° C.

  The adhesive film of the present invention is required when a semiconductor element is mounted on a support member for mounting a semiconductor chip, in addition to the above properties that the breaking strength is 30 MPa or less and the breaking elongation is 40% or less immediately before the expanding step. It is preferable to have heat resistance and moisture resistance. The adhesive film is not particularly limited as long as it satisfies the above characteristics, but has an appropriate tack strength and good handleability in the form of a sheet, so that a thermosetting component, a high molecular weight component, and It is preferable to include a filler, and in addition to these, a curing accelerator, a catalyst, an additive, a coupling agent, and the like may be included. Since the breaking strength and breaking elongation are high in the high molecular weight component contained in the adhesive film and tend to increase as the amount of filler decreases, these components are preferably adjusted to be within the specified range. .

Next, the components used for the adhesive film of the present invention will be described in more detail.
The high molecular weight component in the present invention is not particularly limited as long as it satisfies the properties of the adhesive film. However, the high molecular weight component has a Tg (glass transition temperature) of −30 to 50 ° C. and a molecular weight of 50,000 to 1,000,000. Is mentioned. When Tg exceeds 50 ° C., it is inconvenient in that the flexibility of the film is low, and when Tg is less than −30 ° C., the flexibility of the film is too high, so that the film is difficult to cut during wafer cutting. Is bad. If the molecular weight is less than 50,000, it is disadvantageous in that the heat resistance of the film is lowered, and if the molecular weight exceeds 1,000,000, it is disadvantageous in that the fluidity of the film is lowered.

  A high molecular weight component having a Tg of −20 ° C. to 45 ° C. and a molecular weight of 100,000 to 900,000 is preferable, and a molecular weight of Tg of −20 ° C. to 45 ° C. is preferable in that the film is easily cut at the time of wafer cutting. Is preferably a high molecular weight component having a molecular weight of 500,000 to 900,000, and more preferably a high molecular weight component having a Tg of -10 to 40 ° C. In addition, a weight average molecular weight is a polystyrene conversion value using the calibration curve by a standard polystyrene by the gel permeation chromatography method (GPC).

  Specifically, polyimide, polystyrene, polyethylene, polyester, polyamide, butadiene rubber, acrylic rubber, (meth) acrylic resin, urethane resin, polyphenylene ether resin, polyetherimide resin, phenoxy resin, polycarbonate, polyphenylene ether, modified polyphenylene ether And mixtures thereof. In particular, a high molecular weight component containing a functional monomer and having a weight average molecular weight of 100,000 or more, for example, a functional monomer such as glycidyl acrylate or glycidyl methacrylate, and an epoxy group containing a weight average molecular weight of 100,000 or more ( A (meth) acrylic copolymer is preferred. As the epoxy group-containing (meth) acrylic copolymer, for example, a (meth) acrylic ester copolymer, acrylic rubber or the like can be used, and acrylic rubber is more preferable. Acrylic rubber is a rubber mainly composed of an acrylate ester and mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, or the like.

  The high molecular weight component is preferably contained in an amount of 25% by weight or more and 45% by weight or less, more preferably 27% by weight or more and 40% by weight or less, based on the weight of the adhesive film excluding the weight of the filler. When the blending amount is large, the cutting property tends to be deteriorated, and when the blending amount is small, the fluidity at the time of bonding is too large, and voids tend to be generated.

  Examples of the thermosetting component include an epoxy resin, a cyanate resin, a phenol resin, and a curing agent thereof, and an epoxy resin is preferable in terms of high heat resistance. The epoxy resin is not particularly limited as long as it is cured and has an adhesive action. Bifunctional epoxy resins such as bisphenol A type epoxy, bisphenol F type epoxy and bisphenol S type epoxy, novolac type epoxy resins such as phenol novolak type epoxy resin and cresol novolak type epoxy resin, and the like can be used. Moreover, what is generally known, such as a polyfunctional epoxy resin, a glycidyl amine type epoxy resin, a heterocyclic ring-containing epoxy resin, or an alicyclic epoxy resin, can be applied.

Furthermore, the adhesive film of the present invention has a breaking strength, a reduction in elongation at break, an improvement in the handling property of the adhesive film, an improvement in thermal conductivity, an adjustment of melt viscosity, a thixotropic property, etc. For this purpose, it is preferable to add a filler, preferably an inorganic filler.

As the inorganic filler, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, aluminum nitride, aluminum borate whisker, boron nitride, crystalline silica, Examples thereof include amorphous silica and antimony oxide. In order to improve thermal conductivity, alumina, aluminum nitride, boron nitride, crystalline silica, amorphous silica and the like are preferable. For the purpose of adjusting melt viscosity and imparting thixotropic properties, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, alumina, crystalline silica, non-crystalline silica Crystalline silica and the like are preferred. In order to improve moisture resistance, alumina, silica, aluminum hydroxide, and antimony oxide are preferable.

  The adhesive film of the present invention preferably contains a radiation-polymerizable compound, a thermosetting polymer, a substance having solubility and reactivity with respect to gas and solvent in order to change the properties before and after the modification. There is no restriction | limiting in particular as a radiation polymerizable compound, For example, an acrylic acid compound, a methacrylic acid compound, an acrylic ester compound, a methacrylic ester compound, an aromatic compound, an aromatic amine compound, a diol compound, an isocyanate compound, urethane Examples include (meth) acrylate compounds, urea methacrylate compounds, and radiation-polymerizable copolymers having an ethylenically unsaturated group in the side chain. These radiation polymerizable compounds can be used alone or in combination of two or more. Examples of the thermosetting polymer include the above-mentioned compounds, and these can be used alone or in combination of two or more. There is no particular limitation on the substance having solubility and reactivity with respect to gas and solvent, but for example, acrylic acid compound, methacrylic acid compound, acrylic acid ester compound, methacrylic acid ester compound, aromatic compound, aromatic Examples thereof include amine compounds. These components can also be used alone or in combination of two or more.

  The adhesive film of the present invention is prepared by mixing and kneading the high molecular weight component, thermosetting component, filler, and, if necessary, the above-mentioned modification component in an organic solvent, and then preparing a varnish. After the above varnish layer is formed and heat-dried, it can be obtained by removing the base film. The substrate film may be removed after the adhesive film is attached to the semiconductor wafer.

  The above mixing and kneading can be carried out by appropriately combining dispersers such as ordinary stirrers, crackers, three rolls, and ball mills. The heating and drying conditions are not particularly limited as long as the used solvent is sufficiently volatilized, but the heating is usually performed at 60 to 200 ° C. for 0.1 to 90 minutes.

  The organic solvent used for adjusting the varnish in the production of the adhesive film, that is, the residual volatile content after preparation of the adhesive film is not limited as long as the material can be uniformly dissolved, kneaded or dispersed, and a conventionally known one is used. can do. Examples of such a solvent include ketone solvents such as dimethylformamide, dimethylacetamide, N-methylpyrrolidone, acetone, methyl ethyl ketone, and cyclohexanone, toluene, xylene, and the like. It is preferable to use methyl ethyl ketone, cyclohexanone, etc. in terms of fast drying speed and low price.

  The amount of the organic solvent used is not particularly limited as long as the residual volatile content after preparation of the adhesive sheet is 0.01 to 3% by weight based on the total weight, but from the viewpoint of heat resistance reliability, 0.01% based on the total weight. -2.0 wt% is preferable, and 0.01-1.5 wt% is more preferable based on the total weight.

  Further, when used in manufacturing a semiconductor device, it is preferable that the semiconductor element has an adhesive force that does not scatter during the process, and is then peeled off from the adhesive tape during pickup. For example, if the adhesive sheet is too sticky, the resin at the groove end may be fused, making separation difficult. For this reason, it is preferable to appropriately adjust the tack strength of the adhesive film. As a method for this, by increasing the fluidity of the adhesive film at room temperature, the adhesive strength and the tack strength tend to increase, and the fluidity is lowered. If this is done, the fact that the adhesive strength and tack strength tend to decrease may be utilized. For example, in order to increase fluidity, there are methods such as increasing the plasticizer content and increasing the tackifier content. Conversely, when the fluidity is lowered, the content of the compound may be reduced. Examples of the plasticizer include monofunctional acrylic monomers, monofunctional epoxy resins, liquid epoxy resins, acrylic resins, and epoxy-based so-called diluents.

  Although there is no restriction | limiting in particular in the film thickness of an adhesive film, 1-250 micrometers is preferable. If it is thinner than 1 μm, the stress relaxation effect and adhesiveness tend to be poor, and if it is thicker than 250 μm, it is not economical, and it cannot meet the demand for miniaturization of the semiconductor device, and it is difficult to cut in the process of pulling the adhesive tape. Tend to be. Note that the thickness is preferably 3 to 100 μm, more preferably 5 to 55 μm, in terms of high adhesiveness, thinness of the semiconductor device, and good cutting ability.

  Moreover, said adhesive film is used also as an adhesive tape integrated adhesive film previously bonded with the adhesive tape. In this case, the efficiency of the operation can be improved in that the laminating process on the wafer is performed only once. In this case, as a method of laminating the adhesive film on the pressure-sensitive adhesive tape, in addition to printing, there is a method of pressing and hot roll laminating a pre-made adhesive sheet on the dicing tape. A hot roll laminating method is preferable in terms of good points.

  Examples of the pressure-sensitive adhesive tape used in the present invention include plastic films such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film. Further, surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment and etching treatment may be performed as necessary.

  The pressure-sensitive adhesive tape has adhesiveness, and the above-mentioned plastic film provided with adhesiveness may be used, or the above-mentioned plastic film may be provided with an adhesive layer. This can be formed by applying and drying a composition having an appropriate tack strength obtained by adjusting the ratio of the liquid component and the Tg of the high molecular weight component in the pressure-sensitive adhesive composition. A known dicing tape can be used as the adhesive tape.

  The thickness of the pressure-sensitive adhesive tape is not particularly limited and is appropriately determined based on the knowledge of those skilled in the art depending on the thickness of the adhesive film and the application of the adhesive tape-integrated adhesive film. The film has a handleability of 60 to 150 μm, preferably 70 to 130 μm.

  The stealth dicing method or the tip dicing method can reduce cracks and chips and cut the wafer. However, with the conventional adhesive film, the adhesive film cannot be cut simultaneously with the wafer, and a semiconductor element with an adhesive film cannot be obtained. Therefore, by using the method for manufacturing a semiconductor device of the present invention using a film having the characteristics proposed in the present invention, a semiconductor element with an adhesive film while reducing cracks and chips of the wafer using a stealth dicing method or a tip dicing method is used. Can be obtained. Productivity and workability are improved in the manufacture of semiconductor devices.

It is a block diagram after cut | disconnecting a wafer, and is a manufacturing method of the semiconductor device of this invention. (A) is a top view, (b) is a side view. It is a side view of the state where a gap was made between a semiconductor element and an adjacent semiconductor element by stretching the adhesive sheet in the horizontal direction. (a) shows a modified state of the adhesive film of the present invention. (B) is an enlarged view showing a state where an adhesive film between a semiconductor element and an adjacent semiconductor element is modified. (C) is an enlarged view which shows the state which reduced the film thickness of the adhesive film between the semiconductor element adjacent to a semiconductor element. It is a semiconductor element with the adhesive film of this invention.

Explanation of symbols

1: Semiconductor wafer 2: Adhesive film 3: Adhesive sheet 4: Semiconductor element 5: Modified adhesive film

Claims (5)

A step of laminating a base film, an adhesive layer and a semiconductor wafer in this order;
Cutting a semiconductor wafer at a predetermined position to form a plurality of semiconductor elements;
Stretching the base film in a horizontal direction to form a gap between the plurality of semiconductor elements;
A step of modifying or removing a part of the adhesive layer present in a gap portion between the plurality of semiconductor elements as viewed from the semiconductor wafer side;
Cutting the adhesive layer at the modified portion;
The manufacturing method of the semiconductor element with an adhesive bond layer characterized by including these. 2. The adhesive according to claim 1, wherein the step of cutting the adhesive layer cuts the adhesive layer by stretching the base film by 5 to 50 mm in a horizontal direction at a speed of 10 to 1000 mm / second. A method for manufacturing a semiconductor device with a layer. 2. The method of manufacturing a semiconductor element with an adhesive layer according to claim 1, wherein the modification is a modification in which the breaking strength of the adhesive layer is set to 30 MPa or less and the breaking elongation is set to 40% or less. 2. The method of manufacturing a semiconductor element with an adhesive layer according to claim 1, wherein in the modification, the thickness of the adhesive layer is reduced or the adhesive layer is removed as compared with that before the modification. A step of laminating a base film, an adhesive layer and a semiconductor wafer in this order; a step of cutting a semiconductor wafer at a predetermined position to form a plurality of semiconductor elements; and extending the base film in a horizontal direction. An adhesive comprising: a step of forming a gap between the plurality of semiconductor elements; and a step of removing an adhesive layer present in the gap between the plurality of semiconductor elements as viewed from the semiconductor wafer side. A method for manufacturing a semiconductor device with a layer.

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