JP2006086322A - 磁気抵抗記憶素子およびその製造方法 - Google Patents

磁気抵抗記憶素子およびその製造方法 Download PDF

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Publication number
JP2006086322A
JP2006086322A JP2004269273A JP2004269273A JP2006086322A JP 2006086322 A JP2006086322 A JP 2006086322A JP 2004269273 A JP2004269273 A JP 2004269273A JP 2004269273 A JP2004269273 A JP 2004269273A JP 2006086322 A JP2006086322 A JP 2006086322A
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Japan
Prior art keywords
tmr
film
manufacturing
memory element
insulating film
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JP2004269273A
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Japanese (ja)
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JP2006086322A5 (enExample
Inventor
Haruo Furuta
陽雄 古田
Shuichi Ueno
修一 上野
Takeharu Kuroiwa
丈晴 黒岩
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2004269273A priority Critical patent/JP2006086322A/ja
Publication of JP2006086322A publication Critical patent/JP2006086322A/ja
Publication of JP2006086322A5 publication Critical patent/JP2006086322A5/ja
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  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Semiconductor Memories (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2004269273A 2004-09-16 2004-09-16 磁気抵抗記憶素子およびその製造方法 Pending JP2006086322A (ja)

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JP2004269273A JP2006086322A (ja) 2004-09-16 2004-09-16 磁気抵抗記憶素子およびその製造方法

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JP2004269273A JP2006086322A (ja) 2004-09-16 2004-09-16 磁気抵抗記憶素子およびその製造方法

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JP2006086322A true JP2006086322A (ja) 2006-03-30
JP2006086322A5 JP2006086322A5 (enExample) 2007-10-11

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278456A (ja) * 2005-03-28 2006-10-12 Ulvac Japan Ltd トンネル接合素子のエッチング加工方法
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
US8247880B2 (en) 2008-02-15 2012-08-21 Samsung Electronics Co., Ltd. Magnetic memory device and method of fabricating the same
JP2015103756A (ja) * 2013-11-27 2015-06-04 富士通セミコンダクター株式会社 磁気抵抗素子の製造方法
JP2017228787A (ja) * 2017-08-22 2017-12-28 株式会社日立ハイテクノロジーズ プラズマエッチング方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001338409A (ja) * 2001-03-13 2001-12-07 Hitachi Ltd 磁気ヘッド
JP2002124717A (ja) * 2000-10-18 2002-04-26 Canon Inc 磁気抵抗効果素子及びその製造方法並びにその磁気抵抗効果素子を用いた磁気薄膜メモリ
JP2002314170A (ja) * 2001-04-17 2002-10-25 Canon Inc トンネル磁気抵抗素子の加工方法
JP2003174215A (ja) * 2001-12-07 2003-06-20 Yamaha Corp 磁気トンネル接合素子とその製法
JP2003243630A (ja) * 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
JP2003249576A (ja) * 2002-02-26 2003-09-05 Fujitsu Amd Semiconductor Kk 半導体記憶装置の製造方法及び半導体記憶装置
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP2004214459A (ja) * 2003-01-06 2004-07-29 Sony Corp 不揮発性磁気メモリ装置及びその製造方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002124717A (ja) * 2000-10-18 2002-04-26 Canon Inc 磁気抵抗効果素子及びその製造方法並びにその磁気抵抗効果素子を用いた磁気薄膜メモリ
JP2001338409A (ja) * 2001-03-13 2001-12-07 Hitachi Ltd 磁気ヘッド
JP2002314170A (ja) * 2001-04-17 2002-10-25 Canon Inc トンネル磁気抵抗素子の加工方法
JP2003174215A (ja) * 2001-12-07 2003-06-20 Yamaha Corp 磁気トンネル接合素子とその製法
JP2003243630A (ja) * 2002-02-18 2003-08-29 Sony Corp 磁気メモリ装置およびその製造方法
JP2003249576A (ja) * 2002-02-26 2003-09-05 Fujitsu Amd Semiconductor Kk 半導体記憶装置の製造方法及び半導体記憶装置
JP2004128229A (ja) * 2002-10-02 2004-04-22 Nec Corp 磁性メモリ及びその製造方法
JP2004214459A (ja) * 2003-01-06 2004-07-29 Sony Corp 不揮発性磁気メモリ装置及びその製造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006278456A (ja) * 2005-03-28 2006-10-12 Ulvac Japan Ltd トンネル接合素子のエッチング加工方法
US8247880B2 (en) 2008-02-15 2012-08-21 Samsung Electronics Co., Ltd. Magnetic memory device and method of fabricating the same
JP2010186869A (ja) * 2009-02-12 2010-08-26 Toshiba Corp 磁気抵抗効果素子及びその製造方法
US8339841B2 (en) 2009-02-12 2012-12-25 Kabushiki Kaisha Toshiba Magnetoresistive element including upper electrode having hexagonal cross-section shape and method of manufacturing the same
JP2015103756A (ja) * 2013-11-27 2015-06-04 富士通セミコンダクター株式会社 磁気抵抗素子の製造方法
JP2017228787A (ja) * 2017-08-22 2017-12-28 株式会社日立ハイテクノロジーズ プラズマエッチング方法

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