JP2006079836A - 有機電界発光素子および表示装置 - Google Patents
有機電界発光素子および表示装置 Download PDFInfo
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- 239000010410 layer Substances 0.000 claims abstract description 130
- 239000012044 organic layer Substances 0.000 claims abstract description 27
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 17
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims description 17
- 229910052747 lanthanoid Inorganic materials 0.000 claims description 7
- 150000002602 lanthanoids Chemical class 0.000 claims description 7
- 125000001424 substituent group Chemical group 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 229910052799 carbon Inorganic materials 0.000 claims 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims 2
- 125000003342 alkenyl group Chemical group 0.000 claims 1
- 125000003545 alkoxy group Chemical group 0.000 claims 1
- 125000000217 alkyl group Chemical group 0.000 claims 1
- 125000003277 amino group Chemical group 0.000 claims 1
- 125000001769 aryl amino group Chemical group 0.000 claims 1
- 125000003118 aryl group Chemical group 0.000 claims 1
- 125000004093 cyano group Chemical group *C#N 0.000 claims 1
- 125000004185 ester group Chemical group 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 125000000623 heterocyclic group Chemical group 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims 1
- 125000002560 nitrile group Chemical group 0.000 claims 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 125000004433 nitrogen atom Chemical group N* 0.000 claims 1
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 14
- 239000000758 substrate Substances 0.000 description 23
- 229910000838 Al alloy Inorganic materials 0.000 description 16
- 239000010408 film Substances 0.000 description 13
- 238000002347 injection Methods 0.000 description 12
- 239000007924 injection Substances 0.000 description 12
- 230000000052 comparative effect Effects 0.000 description 11
- 230000005525 hole transport Effects 0.000 description 10
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 150000001875 compounds Chemical class 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 238000001771 vacuum deposition Methods 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 229910001316 Ag alloy Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910002668 Pd-Cu Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005401 electroluminescence Methods 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- UWRZIZXBOLBCON-VOTSOKGWSA-N (e)-2-phenylethenamine Chemical class N\C=C\C1=CC=CC=C1 UWRZIZXBOLBCON-VOTSOKGWSA-N 0.000 description 1
- MGADZUXDNSDTHW-UHFFFAOYSA-N 2H-pyran Chemical compound C1OC=CC=C1 MGADZUXDNSDTHW-UHFFFAOYSA-N 0.000 description 1
- CFNMUZCFSDMZPQ-GHXNOFRVSA-N 7-[(z)-3-methyl-4-(4-methyl-5-oxo-2h-furan-2-yl)but-2-enoxy]chromen-2-one Chemical compound C=1C=C2C=CC(=O)OC2=CC=1OC/C=C(/C)CC1OC(=O)C(C)=C1 CFNMUZCFSDMZPQ-GHXNOFRVSA-N 0.000 description 1
- FJNCXZZQNBKEJT-UHFFFAOYSA-N 8beta-hydroxymarrubiin Natural products O1C(=O)C2(C)CCCC3(C)C2C1CC(C)(O)C3(O)CCC=1C=COC=1 FJNCXZZQNBKEJT-UHFFFAOYSA-N 0.000 description 1
- 229910018507 Al—Ni Inorganic materials 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910019015 Mg-Ag Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 1
- 125000005264 aryl amine group Chemical group 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical class C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Inorganic materials [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- 150000004961 triphenylmethanes Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/12—Light sources with substantially two-dimensional radiating surfaces
- H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
- H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8051—Anodes
- H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/622—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene containing four rings, e.g. pyrene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
- H10K85/633—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine comprising polycyclic condensed aromatic hydrocarbons as substituents on the nitrogen atom
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/302—Details of OLEDs of OLED structures
- H10K2102/3023—Direction of light emission
- H10K2102/3026—Top emission
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
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- Optics & Photonics (AREA)
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Abstract
【解決手段】陽極13と陰極15との間に、少なくとも発光層14cを有する有機層14を狭持してなる有機電界発光素子11において、陽極13は、アルミニウムを主成分とする合金からなる第1の層を有し、前記合金の副成分は、前記主成分よりも相対的に仕事関数が小さい元素を少なくとも一つ含むことを特徴とする。
【選択図】図1
Description
さらに、第2の層は、ITO(Indium Tin Oxide)やIZO(Indium Zinc Oxide)などの透明導電層であっても良い。これらの導電層は、陽極の電子注入特性を改善することができる。
各実施例1〜7においては、上述した実施の形態において、図1を用いて説明した構成の有機電界発光素子11を形成した。ただし、各実施例においては、陽極13および正孔注入層14aとして、下記表1に示すそれぞれの材料及び積層構造を用いた。以下に先ず、実施例1〜7の有機電界発光素子11の製造手順を説明する。
比較例1,2では、上述した実施例1〜7の有機電界発光素子の作製手順において、アルミニウム合金に換えて銀合金を用いた陽極を有する有機電界発光素子を作製した。すなわち、比較例1においては、Ag−Pd−Cu層を形成しこの上部にITO層を形成した2層構造の陽極13を設けた。また、比較例2においては、Ag−Pd−Cuからなる単層構造の陽極13を設けた。また、正孔注入層14aとしては、実施例1などと同様の式(2)の化合物を用いた。
上述のようにして作製した実施例1〜7および比較例1,2の有機電界発光素子について発光効率を測定し、測定結果を上記表1(a)発光効率に合わせて示した。尚、有機電界発光素子の発光効率(cd/A)は、6Vの電圧印加時に測定された値である。
実施例3および比較例1の構成の有機電界発光素子をそれぞれ10素子作製し、80℃での高温において300時間駆動した場合におけるショートの数を比較した。その結果を上記表1(b)ショート数に合わせて示した。
実施例1および比較例2の構成の有機電界発光素子について、駆動時間(Operating Time)−相対輝度(Relative Luminance)を測定した結果を図3に示す。またこれらの素子について、駆動時間(Operating Time)−駆動電圧(Voltage)を測定した結果を図4に示す。
Claims (7)
- 陽極と陰極との間に、少なくとも発光層を有する有機層を狭持してなる有機電界発光素子において、
前記陽極は、アルミニウムを主成分とする合金からなる第1の層を有し、前記合金の副成分は、前記主成分よりも相対的に仕事関数が小さい元素を少なくとも一つ含む
ことを特徴とする有機電界発光素子。 - 請求項1に記載の有機電界発光素子において、
前記副成分の含有率は、10wt%以下である
ことを特徴とする有機電界発光素子。 - 請求項1に記載の有機電界発光素子において、
前記副成分は、ランタノイド系列元素のうち少なくとも一つの元素を含む
ことを特徴とする有機電界発光素子。 - 請求項1記載の有機電界発光素子において、
前記陽極は、前記有機層と接する側に、前記合金の酸化物からなる第2の層をさらに含む
ことを特徴とする有機電界発光素子。 - 請求項1記載の有機電界発光素子において、
前記有機層は、前記陽極と接する層が下記式(1)に示す材料を用いて構成されている
ことを特徴とする有機電界発光素子。
- 請求項1記載の有機電界発光素子において、
前記陽極は、光反射性であり、前記陰極は光透過性であり、前記発光層からの光が主として前記陰極から放出される
ことを特徴とする有機電界発光素子。 - 画素毎に設けられた有機電界発光素子に電流が供給され、供給される電流量に応じて前記有機電界発光素子が発光することで画像を表示する表示装置において、
前記有機電界発光素子は、陽極と陰極との間に、少なくとも発光層を有する有機層を狭持してなり、前記陽極は、アルミニウムを主成分とする合金からなる第1の層を有し、前記合金の副成分は、前記主成分よりも相対的に仕事関数が小さい元素を少なくとも一つ含む
ことを特徴とする表示装置。
Priority Applications (5)
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JP2004259405A JP4254668B2 (ja) | 2004-09-07 | 2004-09-07 | 有機電界発光素子および表示装置 |
US11/215,680 US7615290B2 (en) | 2004-09-07 | 2005-08-30 | Organic electroluminescent device and display device |
KR1020050082485A KR101251639B1 (ko) | 2004-09-07 | 2005-09-06 | 유기 전계 발광 소자 및 표시 장치 |
CNB2005100992328A CN100534249C (zh) | 2004-09-07 | 2005-09-07 | 有机电致发光器件和显示装置 |
KR1020120150743A KR20130014470A (ko) | 2004-09-07 | 2012-12-21 | 유기 전계 발광 소자 |
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JP2004259405A JP4254668B2 (ja) | 2004-09-07 | 2004-09-07 | 有機電界発光素子および表示装置 |
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JP2006079836A true JP2006079836A (ja) | 2006-03-23 |
JP4254668B2 JP4254668B2 (ja) | 2009-04-15 |
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US (1) | US7615290B2 (ja) |
JP (1) | JP4254668B2 (ja) |
KR (2) | KR101251639B1 (ja) |
CN (1) | CN100534249C (ja) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006114544A (ja) * | 2004-10-12 | 2006-04-27 | Chisso Corp | 有機電界発光素子 |
JP2006331864A (ja) * | 2005-05-26 | 2006-12-07 | Mitsubishi Electric Corp | 有機電界発光型表示装置 |
JP2010192413A (ja) * | 2009-01-22 | 2010-09-02 | Sony Corp | 有機電界発光素子および表示装置 |
WO2011059098A1 (ja) * | 2009-11-16 | 2011-05-19 | 株式会社神戸製鋼所 | 有機elディスプレイ用の反射アノード電極 |
US9224971B2 (en) | 2009-12-02 | 2015-12-29 | Joled Inc. | Organic electroluminescence device and display unit |
JP2020194758A (ja) * | 2019-05-30 | 2020-12-03 | 株式会社神戸製鋼所 | 有機elディスプレイ用の反射アノード電極 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
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US8173995B2 (en) * | 2005-12-23 | 2012-05-08 | E. I. Du Pont De Nemours And Company | Electronic device including an organic active layer and process for forming the electronic device |
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JP2003303681A (ja) | 2002-04-09 | 2003-10-24 | Sharp Corp | 有機led素子およびその製造方法、有機led表示装置 |
JP3966166B2 (ja) | 2002-11-13 | 2007-08-29 | 富士電機ホールディングス株式会社 | 有機el発光素子およびその製造方法 |
KR100527193B1 (ko) * | 2003-06-03 | 2005-11-08 | 삼성에스디아이 주식회사 | 다층구조 화소전극을 갖는 유기전계발광소자 및 그의제조방법 |
KR100546662B1 (ko) | 2003-08-05 | 2006-01-26 | 엘지전자 주식회사 | 유기 el 소자 |
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2004
- 2004-09-07 JP JP2004259405A patent/JP4254668B2/ja not_active Expired - Fee Related
-
2005
- 2005-08-30 US US11/215,680 patent/US7615290B2/en active Active
- 2005-09-06 KR KR1020050082485A patent/KR101251639B1/ko not_active IP Right Cessation
- 2005-09-07 CN CNB2005100992328A patent/CN100534249C/zh active Active
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2012
- 2012-12-21 KR KR1020120150743A patent/KR20130014470A/ko not_active Application Discontinuation
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JP2006114544A (ja) * | 2004-10-12 | 2006-04-27 | Chisso Corp | 有機電界発光素子 |
JP2006331864A (ja) * | 2005-05-26 | 2006-12-07 | Mitsubishi Electric Corp | 有機電界発光型表示装置 |
JP4556768B2 (ja) * | 2005-05-26 | 2010-10-06 | 三菱電機株式会社 | 有機電界発光型表示装置 |
JP2010192413A (ja) * | 2009-01-22 | 2010-09-02 | Sony Corp | 有機電界発光素子および表示装置 |
US8524379B2 (en) | 2009-01-22 | 2013-09-03 | Sony Corporation | Organic electroluminescence device and display unit |
WO2011059098A1 (ja) * | 2009-11-16 | 2011-05-19 | 株式会社神戸製鋼所 | 有機elディスプレイ用の反射アノード電極 |
JP2011108459A (ja) * | 2009-11-16 | 2011-06-02 | Kobe Steel Ltd | 有機elディスプレイ用の反射アノード電極 |
US9224971B2 (en) | 2009-12-02 | 2015-12-29 | Joled Inc. | Organic electroluminescence device and display unit |
JP2020194758A (ja) * | 2019-05-30 | 2020-12-03 | 株式会社神戸製鋼所 | 有機elディスプレイ用の反射アノード電極 |
JP7231487B2 (ja) | 2019-05-30 | 2023-03-01 | 株式会社神戸製鋼所 | 反射アノード電極及びその製造方法、薄膜トランジスタ基板、有機elディスプレイ、並びにスパッタリングターゲット |
Also Published As
Publication number | Publication date |
---|---|
JP4254668B2 (ja) | 2009-04-15 |
KR20130014470A (ko) | 2013-02-07 |
US7615290B2 (en) | 2009-11-10 |
CN1747615A (zh) | 2006-03-15 |
CN100534249C (zh) | 2009-08-26 |
KR101251639B1 (ko) | 2013-04-05 |
KR20060051032A (ko) | 2006-05-19 |
US20060049747A1 (en) | 2006-03-09 |
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