JP2006069814A - 窒化アルミニウム積層基板 - Google Patents

窒化アルミニウム積層基板 Download PDF

Info

Publication number
JP2006069814A
JP2006069814A JP2004252501A JP2004252501A JP2006069814A JP 2006069814 A JP2006069814 A JP 2006069814A JP 2004252501 A JP2004252501 A JP 2004252501A JP 2004252501 A JP2004252501 A JP 2004252501A JP 2006069814 A JP2006069814 A JP 2006069814A
Authority
JP
Japan
Prior art keywords
substrate
aln
plane
aluminum nitride
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004252501A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006069814A5 (enExample
Inventor
Hiroyuki Fukuyama
博之 福山
Shinya Kusunoki
信哉 楠
Akira Hakomori
明 箱守
Kazuya Takada
和哉 高田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Tokyo Institute of Technology NUC
Original Assignee
Tokuyama Corp
Tokyo Institute of Technology NUC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp, Tokyo Institute of Technology NUC filed Critical Tokuyama Corp
Priority to JP2004252501A priority Critical patent/JP2006069814A/ja
Publication of JP2006069814A publication Critical patent/JP2006069814A/ja
Publication of JP2006069814A5 publication Critical patent/JP2006069814A5/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
JP2004252501A 2004-08-31 2004-08-31 窒化アルミニウム積層基板 Pending JP2006069814A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004252501A JP2006069814A (ja) 2004-08-31 2004-08-31 窒化アルミニウム積層基板

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004252501A JP2006069814A (ja) 2004-08-31 2004-08-31 窒化アルミニウム積層基板

Publications (2)

Publication Number Publication Date
JP2006069814A true JP2006069814A (ja) 2006-03-16
JP2006069814A5 JP2006069814A5 (enExample) 2007-07-12

Family

ID=36150813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004252501A Pending JP2006069814A (ja) 2004-08-31 2004-08-31 窒化アルミニウム積層基板

Country Status (1)

Country Link
JP (1) JP2006069814A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009062248A (ja) * 2007-09-10 2009-03-26 Cpd Gijutsu Kenkyusho:Kk 超微粒子原料を用いる窒化アルミニウム単結晶の育成法
WO2009090923A1 (ja) 2008-01-16 2009-07-23 National University Corporation Tokyo University Of Agriculture And Technology 積層体およびその製造方法
JP2017122028A (ja) * 2016-01-07 2017-07-13 Jfeミネラル株式会社 窒化アルミニウム単結晶
JP2019142771A (ja) * 2019-06-06 2019-08-29 Jfeミネラル株式会社 窒化アルミニウムウェーハの製造方法

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009062248A (ja) * 2007-09-10 2009-03-26 Cpd Gijutsu Kenkyusho:Kk 超微粒子原料を用いる窒化アルミニウム単結晶の育成法
WO2009090923A1 (ja) 2008-01-16 2009-07-23 National University Corporation Tokyo University Of Agriculture And Technology 積層体およびその製造方法
US20110094438A1 (en) * 2008-01-16 2011-04-28 Akinori Koukitu Laminated body and the method for production thereof
JP2017122028A (ja) * 2016-01-07 2017-07-13 Jfeミネラル株式会社 窒化アルミニウム単結晶
WO2017119305A1 (ja) * 2016-01-07 2017-07-13 Jfeミネラル株式会社 窒化アルミニウム単結晶
KR20180094051A (ko) * 2016-01-07 2018-08-22 제이에프이미네라르 가부시키가이샤 질화 알루미늄 단결정
US10704162B2 (en) 2016-01-07 2020-07-07 Jfe Mineral Company, Ltd Aluminum nitride single crystal
KR102176894B1 (ko) * 2016-01-07 2020-11-10 제이에프이미네라르 가부시키가이샤 질화 알루미늄 단결정
JP2019142771A (ja) * 2019-06-06 2019-08-29 Jfeミネラル株式会社 窒化アルミニウムウェーハの製造方法

Similar Documents

Publication Publication Date Title
JP5656697B2 (ja) 窒化アルミニウム結晶の製造方法
US7220314B2 (en) Single crystalline aluminum nitride film, method of forming the same, base substrate for group III element nitride film, light emitting device and surface acoustic wave device
JP4117402B2 (ja) 単結晶窒化アルミニウム膜およびその形成方法、iii族窒化物膜用下地基板、発光素子、並びに表面弾性波デバイス
JP2016034899A (ja) 最初のiii族−窒化物種晶からの熱アンモニア成長による改善された結晶性のiii族−窒化物結晶を生成するための方法
JP5197283B2 (ja) 窒化アルミニウム単結晶基板、積層体、およびこれらの製造方法
JP2009519198A (ja) 低転位密度GaNの成長のためのプロセス
JP4340866B2 (ja) 窒化物半導体基板及びその製造方法
JP4877712B2 (ja) 窒化アルミニウム単結晶積層基板および窒化アルミニウム単結晶膜の製造方法
JP2008069067A (ja) 窒化ガリウム単結晶厚膜の製造方法
US7338555B2 (en) Highly crystalline aluminum nitride multi-layered substrate and production process thereof
JP6491488B2 (ja) エピタキシャル成長用基板及びその製造方法
JP5144192B2 (ja) Iii族窒化物結晶の成長方法
JP2013212963A (ja) AlN系膜の製造方法およびそれに用いられる複合基板
JP4481118B2 (ja) 高結晶性窒化アルミニウム積層基板の製造方法
JP4600160B2 (ja) Iii族窒化物結晶の成長方法
JP4738748B2 (ja) Iii族窒化物単結晶の作製方法
JP2006069814A (ja) 窒化アルミニウム積層基板
JP2007055881A (ja) AlN結晶およびその成長方法ならびにAlN結晶基板
JP2012031027A (ja) 単結晶窒化アルミニウムの製造方法
JP5129186B2 (ja) Iii族窒化物半導体層の製造方法
JP2008230868A (ja) 窒化ガリウム結晶の成長方法および窒化ガリウム結晶基板
JP5005266B2 (ja) AlN結晶の作製方法およびAlN厚膜
JP4595592B2 (ja) 単結晶成長方法
JP7754496B2 (ja) 窒化アルミニウム単結晶の製造方法および窒化アルミニウム単結晶製造装置
JP2024117642A (ja) AlN単結晶の製造方法およびAlN単結晶

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20070523

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20070523

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20090908

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20090915

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20100216