JP2006049859A - 半導体装置およびその作製方法 - Google Patents

半導体装置およびその作製方法 Download PDF

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Publication number
JP2006049859A
JP2006049859A JP2005189573A JP2005189573A JP2006049859A JP 2006049859 A JP2006049859 A JP 2006049859A JP 2005189573 A JP2005189573 A JP 2005189573A JP 2005189573 A JP2005189573 A JP 2005189573A JP 2006049859 A JP2006049859 A JP 2006049859A
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Japan
Prior art keywords
film
thin film
integrated circuit
semiconductor device
release layer
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JP2005189573A
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English (en)
Japanese (ja)
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JP2006049859A5 (https=
Inventor
Tatsuya Arao
達也 荒尾
Yoshitaka Michimae
芳隆 道前
Hiromi Yamada
大幹 山田
Eiji Sugiyama
栄二 杉山
Tomoko Tamura
友子 田村
Junya Maruyama
純矢 丸山
Nozomi Horikoshi
のぞみ 堀越
Yuugo Gotou
裕吾 後藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2005189573A priority Critical patent/JP2006049859A/ja
Publication of JP2006049859A publication Critical patent/JP2006049859A/ja
Publication of JP2006049859A5 publication Critical patent/JP2006049859A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0214—Manufacture or treatment of multiple TFTs using temporary substrates
JP2005189573A 2004-06-29 2005-06-29 半導体装置およびその作製方法 Withdrawn JP2006049859A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005189573A JP2006049859A (ja) 2004-06-29 2005-06-29 半導体装置およびその作製方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004192117 2004-06-29
JP2005189573A JP2006049859A (ja) 2004-06-29 2005-06-29 半導体装置およびその作製方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012185122A Division JP5509280B2 (ja) 2004-06-29 2012-08-24 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2006049859A true JP2006049859A (ja) 2006-02-16
JP2006049859A5 JP2006049859A5 (https=) 2008-06-19

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ID=36027999

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JP2005189573A Withdrawn JP2006049859A (ja) 2004-06-29 2005-06-29 半導体装置およびその作製方法

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JP (1) JP2006049859A (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007280372A (ja) * 2006-03-15 2007-10-25 Semiconductor Energy Lab Co Ltd 半導体装置及び当該半導体装置を具備するｉｄラベル、ｉｄタグ、ｉｄカード
WO2010010739A1 (ja) * 2008-07-24 2010-01-28 次世代モバイル用表示材料技術研究組合 薄膜半導体基板およびその製造装置
JP2010062526A (ja) * 2008-09-02 2010-03-18 Samsung Electro-Mechanics Co Ltd 薄膜素子の製造方法
JP2010062527A (ja) * 2008-09-02 2010-03-18 Samsung Electro-Mechanics Co Ltd 薄膜素子の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1159036A (ja) * 1997-08-21 1999-03-02 Hitachi Maxell Ltd 非接触ｉｃカード及びその製造方法
JP2000153420A (ja) * 1998-07-30 2000-06-06 Commiss Energ Atom エレメントの移動方法
JP2001272923A (ja) * 2000-01-17 2001-10-05 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2002236896A (ja) * 2001-02-07 2002-08-23 Toppan Printing Co Ltd ヒートシール性を有するｉｃタグ
JP2003204047A (ja) * 2001-12-28 2003-07-18 Seiko Epson Corp 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1159036A (ja) * 1997-08-21 1999-03-02 Hitachi Maxell Ltd 非接触ｉｃカード及びその製造方法
JP2000153420A (ja) * 1998-07-30 2000-06-06 Commiss Energ Atom エレメントの移動方法
JP2001272923A (ja) * 2000-01-17 2001-10-05 Semiconductor Energy Lab Co Ltd 表示装置の作製方法
JP2002236896A (ja) * 2001-02-07 2002-08-23 Toppan Printing Co Ltd ヒートシール性を有するｉｃタグ
JP2003204047A (ja) * 2001-12-28 2003-07-18 Seiko Epson Corp 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007280372A (ja) * 2006-03-15 2007-10-25 Semiconductor Energy Lab Co Ltd 半導体装置及び当該半導体装置を具備するｉｄラベル、ｉｄタグ、ｉｄカード
WO2010010739A1 (ja) * 2008-07-24 2010-01-28 次世代モバイル用表示材料技術研究組合 薄膜半導体基板およびその製造装置
JP2010026457A (ja) * 2008-07-24 2010-02-04 Technology Research Association For Advanced Display Materials 薄膜半導体基板およびその製造装置
JP2010062526A (ja) * 2008-09-02 2010-03-18 Samsung Electro-Mechanics Co Ltd 薄膜素子の製造方法
JP2010062527A (ja) * 2008-09-02 2010-03-18 Samsung Electro-Mechanics Co Ltd 薄膜素子の製造方法
US8574389B2 (en) 2008-09-02 2013-11-05 Samsung Electro-Mechanics Co., Ltd. Method of manufacturing thin film device

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