JP2006041502A5 - - Google Patents
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- Publication number
- JP2006041502A5 JP2006041502A5 JP2005185380A JP2005185380A JP2006041502A5 JP 2006041502 A5 JP2006041502 A5 JP 2006041502A5 JP 2005185380 A JP2005185380 A JP 2005185380A JP 2005185380 A JP2005185380 A JP 2005185380A JP 2006041502 A5 JP2006041502 A5 JP 2006041502A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- release layer
- forming
- layer
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010408 film Substances 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 8
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- -1 halogen fluoride Chemical class 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005185380A JP4912627B2 (ja) | 2004-06-24 | 2005-06-24 | 薄膜集積回路の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004186543 | 2004-06-24 | ||
| JP2004186543 | 2004-06-24 | ||
| JP2005185380A JP4912627B2 (ja) | 2004-06-24 | 2005-06-24 | 薄膜集積回路の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006041502A JP2006041502A (ja) | 2006-02-09 |
| JP2006041502A5 true JP2006041502A5 (OSRAM) | 2008-05-15 |
| JP4912627B2 JP4912627B2 (ja) | 2012-04-11 |
Family
ID=35906104
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005185380A Expired - Fee Related JP4912627B2 (ja) | 2004-06-24 | 2005-06-24 | 薄膜集積回路の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4912627B2 (OSRAM) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5204959B2 (ja) | 2006-06-26 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP5264016B2 (ja) * | 2006-06-30 | 2013-08-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| CN101517700B (zh) * | 2006-09-20 | 2014-04-16 | 伊利诺伊大学评议会 | 用于制造可转移半导体结构、器件和器件构件的松脱策略 |
| EP3729499A4 (en) | 2017-12-22 | 2021-12-15 | Board of Regents, The University of Texas System | NANOSCALE ALIGNED THREE-DIMENSIONAL STACKED INTEGRATED CIRCUIT |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4748859B2 (ja) * | 2000-01-17 | 2011-08-17 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| JP4524561B2 (ja) * | 2001-07-24 | 2010-08-18 | セイコーエプソン株式会社 | 転写方法 |
-
2005
- 2005-06-24 JP JP2005185380A patent/JP4912627B2/ja not_active Expired - Fee Related
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