JP2006032735A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2006032735A5 JP2006032735A5 JP2004210815A JP2004210815A JP2006032735A5 JP 2006032735 A5 JP2006032735 A5 JP 2006032735A5 JP 2004210815 A JP2004210815 A JP 2004210815A JP 2004210815 A JP2004210815 A JP 2004210815A JP 2006032735 A5 JP2006032735 A5 JP 2006032735A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- semiconductor region
- semiconductor film
- region
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 143
- 239000012535 impurity Substances 0.000 claims 16
- 238000010438 heat treatment Methods 0.000 claims 13
- 238000004519 manufacturing process Methods 0.000 claims 12
- 238000000034 method Methods 0.000 claims 12
- 238000005530 etching Methods 0.000 claims 9
- 230000003197 catalytic effect Effects 0.000 claims 6
- 239000000758 substrate Substances 0.000 claims 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 4
- 239000007789 gas Substances 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 229910052787 antimony Inorganic materials 0.000 claims 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 2
- 229910052785 arsenic Inorganic materials 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052797 bismuth Inorganic materials 0.000 claims 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 2
- 229910052757 nitrogen Inorganic materials 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 1
- 230000003796 beauty Effects 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052795 boron group element Inorganic materials 0.000 claims 1
- 239000003054 catalyst Substances 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 229910052735 hafnium Inorganic materials 0.000 claims 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052696 pnictogen Inorganic materials 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052726 zirconium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004210815A JP4574261B2 (ja) | 2004-07-16 | 2004-07-16 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004210815A JP4574261B2 (ja) | 2004-07-16 | 2004-07-16 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006032735A JP2006032735A (ja) | 2006-02-02 |
| JP2006032735A5 true JP2006032735A5 (enExample) | 2007-08-02 |
| JP4574261B2 JP4574261B2 (ja) | 2010-11-04 |
Family
ID=35898698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004210815A Expired - Fee Related JP4574261B2 (ja) | 2004-07-16 | 2004-07-16 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4574261B2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8314765B2 (en) * | 2008-06-17 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Driver circuit, display device, and electronic device |
| CN103928476A (zh) * | 2008-10-03 | 2014-07-16 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| KR101634411B1 (ko) * | 2008-10-31 | 2016-06-28 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 구동 회로, 표시 장치 및 전자 장치 |
| KR101740943B1 (ko) * | 2009-09-24 | 2017-06-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH114001A (ja) * | 1997-06-11 | 1999-01-06 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4236716B2 (ja) * | 1997-09-29 | 2009-03-11 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2002324808A (ja) * | 2001-01-19 | 2002-11-08 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP4439792B2 (ja) * | 2002-07-08 | 2010-03-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2004
- 2004-07-16 JP JP2004210815A patent/JP4574261B2/ja not_active Expired - Fee Related
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP5572290B2 (ja) | 薄膜トランジスタ及びその製造方法 | |
| CN100419948C (zh) | 半导体器件及其制造方法 | |
| CN104347380B (zh) | 形成包含硅化及非硅化电路组件的半导体结构的方法 | |
| CN105304500B (zh) | N型tft的制作方法 | |
| JPWO2016175086A1 (ja) | 半導体装置及びその製造方法 | |
| JP2006179878A5 (enExample) | ||
| CN100470764C (zh) | 平面显示器的半导体结构及其制造方法 | |
| CN105355588B (zh) | Tft阵列基板的制备方法、tft阵列基板及显示装置 | |
| TWI575577B (zh) | 畫素結構及畫素結構的製造方法 | |
| JP2007027735A5 (enExample) | ||
| JP2006128665A5 (enExample) | ||
| TWI662330B (zh) | 主動元件基板及其製法 | |
| JP2006080495A5 (enExample) | ||
| JP2006128666A5 (enExample) | ||
| JPH11261075A5 (enExample) | ||
| KR101903565B1 (ko) | 박막 트랜지스터 기판 및 그 제조 방법 | |
| JP2006032735A5 (enExample) | ||
| US8178879B2 (en) | Array substrate for display device and method of fabricating the same | |
| CN101162710A (zh) | 薄膜晶体管基底的制造方法 | |
| TW200409364A (en) | Structure of thin film transistor array and driving circuits | |
| TW200304706A (en) | Thin film transistor, circuit device and liquid crystal display | |
| US8450129B2 (en) | Thin film transistor substrate and manufacturing method thereof | |
| JP2010177325A (ja) | 薄膜トランジスターの製造方法 | |
| JP2006128654A5 (enExample) | ||
| JP2006345003A5 (enExample) |