JP4574261B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP4574261B2
JP4574261B2 JP2004210815A JP2004210815A JP4574261B2 JP 4574261 B2 JP4574261 B2 JP 4574261B2 JP 2004210815 A JP2004210815 A JP 2004210815A JP 2004210815 A JP2004210815 A JP 2004210815A JP 4574261 B2 JP4574261 B2 JP 4574261B2
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semiconductor film
film
region
semiconductor
electrode
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Japanese (ja)
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JP2006032735A5 (enExample
JP2006032735A (ja
Inventor
舜平 山崎
博信 小路
慎志 前川
理 中村
達也 本田
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
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JP2004210815A 2004-07-16 2004-07-16 半導体装置の作製方法 Expired - Fee Related JP4574261B2 (ja)

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JP2004210815A JP4574261B2 (ja) 2004-07-16 2004-07-16 半導体装置の作製方法

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JP2004210815A JP4574261B2 (ja) 2004-07-16 2004-07-16 半導体装置の作製方法

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JP2006032735A JP2006032735A (ja) 2006-02-02
JP2006032735A5 JP2006032735A5 (enExample) 2007-08-02
JP4574261B2 true JP4574261B2 (ja) 2010-11-04

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JP2004210815A Expired - Fee Related JP4574261B2 (ja) 2004-07-16 2004-07-16 半導体装置の作製方法

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Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8314765B2 (en) * 2008-06-17 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. Driver circuit, display device, and electronic device
CN103928476A (zh) * 2008-10-03 2014-07-16 株式会社半导体能源研究所 显示装置及其制造方法
KR101634411B1 (ko) * 2008-10-31 2016-06-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 구동 회로, 표시 장치 및 전자 장치
KR101740943B1 (ko) * 2009-09-24 2017-06-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH114001A (ja) * 1997-06-11 1999-01-06 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4236716B2 (ja) * 1997-09-29 2009-03-11 株式会社半導体エネルギー研究所 半導体装置
JP2002324808A (ja) * 2001-01-19 2002-11-08 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP4439792B2 (ja) * 2002-07-08 2010-03-24 株式会社半導体エネルギー研究所 半導体装置の作製方法

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