JP2006032541A5 - - Google Patents

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Publication number
JP2006032541A5
JP2006032541A5 JP2004207205A JP2004207205A JP2006032541A5 JP 2006032541 A5 JP2006032541 A5 JP 2006032541A5 JP 2004207205 A JP2004207205 A JP 2004207205A JP 2004207205 A JP2004207205 A JP 2004207205A JP 2006032541 A5 JP2006032541 A5 JP 2006032541A5
Authority
JP
Japan
Prior art keywords
nitride film
gate electrode
film
outer diameter
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004207205A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006032541A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004207205A priority Critical patent/JP2006032541A/ja
Priority claimed from JP2004207205A external-priority patent/JP2006032541A/ja
Publication of JP2006032541A publication Critical patent/JP2006032541A/ja
Publication of JP2006032541A5 publication Critical patent/JP2006032541A5/ja
Pending legal-status Critical Current

Links

JP2004207205A 2004-07-14 2004-07-14 半導体装置 Pending JP2006032541A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2004207205A JP2006032541A (ja) 2004-07-14 2004-07-14 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004207205A JP2006032541A (ja) 2004-07-14 2004-07-14 半導体装置

Publications (2)

Publication Number Publication Date
JP2006032541A JP2006032541A (ja) 2006-02-02
JP2006032541A5 true JP2006032541A5 (cg-RX-API-DMAC7.html) 2007-08-23

Family

ID=35898545

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004207205A Pending JP2006032541A (ja) 2004-07-14 2004-07-14 半導体装置

Country Status (1)

Country Link
JP (1) JP2006032541A (cg-RX-API-DMAC7.html)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5998521B2 (ja) 2012-02-28 2016-09-28 セイコーエプソン株式会社 不揮発性半導体メモリー及び不揮発性半導体メモリーの製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3520697B2 (ja) * 1996-11-07 2004-04-19 富士通株式会社 半導体装置及びその製造方法
KR100385955B1 (ko) * 2001-02-13 2003-06-02 삼성전자주식회사 다중막으로 이루어진 스페이서를 갖는 반도체 소자 및 그제조방법

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