JP2006032462A5 - - Google Patents

Claims (10)

Forming a resin layer on the substrate;
Forming a protective metal layer on the resin layer;
Forming grooves in the protective metal layer and the resin layer;
Forming a conductive layer filling the groove in the groove and on the protective metal layer;
Using the protective metal layer as a polishing protective layer, mechanically polishing the conductive layer, thereby embedding the conductive layer in the groove to obtain a wiring layer;
And a step of removing the protective metal layer on the resin layer. Forming a wiring layer on the substrate;
Forming a via post erected on the wiring layer and provided with a protective metal layer on the upper surface side;
A step of embedding the step of the via post and forming a resin layer covering the via post; and
And a step of exposing the protective metal layer on the via post by mechanically polishing the resin layer using the protective metal layer as a polishing protective layer. The step of forming the via post includes
Forming a seed layer covering the wiring layer;
Forming a resist film having an opening on a required portion of the wiring layer on the seed layer;
Forming a conductor in the opening of the resist film by electroplating using the seed layer as a plating power supply layer;
Selectively forming the protective metal layer on the conductor;
Removing the resist film;
The method for forming a wiring according to claim 2, further comprising: etching the seed layer using the conductor and the protective metal layer as a mask.   4. The wiring forming method according to claim 2, further comprising a step of removing the protective metal layer after the step of exposing the protective metal layer on the via post.   The wiring forming method according to claim 1, wherein a metal having a higher hardness than that of the conductive layer is used as the protective metal layer.   6. The wiring forming method according to claim 5, wherein the protective metal layer is made of any one of cobalt (Co), nickel (Ni), titanium tungsten (TiW), titanium (Ti), and tungsten (W). .   The wiring forming method according to claim 1, wherein the mechanical polishing is any one of buff polishing, tape polishing, and polishing by a grinder.   The wiring forming method according to claim 1, wherein the conductive layer is a copper layer, and the resin layer is an epoxy resin or a polyimide resin.   The wiring formation method according to claim 2, wherein the via post is made of copper, and the resin layer is an epoxy resin or a polyimide resin.   The wiring forming method according to claim 2, wherein the resin layer is a solder resist film, and an electronic component is electrically connected to an upper surface of the via post.