JP2006012916A5 - - Google Patents

Download PDF

Info

Publication number
JP2006012916A5
JP2006012916A5 JP2004184028A JP2004184028A JP2006012916A5 JP 2006012916 A5 JP2006012916 A5 JP 2006012916A5 JP 2004184028 A JP2004184028 A JP 2004184028A JP 2004184028 A JP2004184028 A JP 2004184028A JP 2006012916 A5 JP2006012916 A5 JP 2006012916A5
Authority
JP
Japan
Prior art keywords
electrode
light emitting
emitting device
layer
emitting element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2004184028A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006012916A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004184028A priority Critical patent/JP2006012916A/ja
Priority claimed from JP2004184028A external-priority patent/JP2006012916A/ja
Priority to US11/157,174 priority patent/US20060001035A1/en
Publication of JP2006012916A publication Critical patent/JP2006012916A/ja
Publication of JP2006012916A5 publication Critical patent/JP2006012916A5/ja
Withdrawn legal-status Critical Current

Links

JP2004184028A 2004-06-22 2004-06-22 発光素子 Withdrawn JP2006012916A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004184028A JP2006012916A (ja) 2004-06-22 2004-06-22 発光素子
US11/157,174 US20060001035A1 (en) 2004-06-22 2005-06-21 Light emitting element and method of making same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004184028A JP2006012916A (ja) 2004-06-22 2004-06-22 発光素子

Publications (2)

Publication Number Publication Date
JP2006012916A JP2006012916A (ja) 2006-01-12
JP2006012916A5 true JP2006012916A5 (de) 2006-11-02

Family

ID=35779819

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004184028A Withdrawn JP2006012916A (ja) 2004-06-22 2004-06-22 発光素子

Country Status (1)

Country Link
JP (1) JP2006012916A (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4823866B2 (ja) * 2006-11-13 2011-11-24 株式会社小糸製作所 車両用灯具の発光モジュール
JP2008130799A (ja) * 2006-11-21 2008-06-05 Sharp Corp 半導体発光素子および半導体発光素子の製造方法
JP2010512662A (ja) 2006-12-11 2010-04-22 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 透明発光ダイオード
JP5012187B2 (ja) * 2007-05-09 2012-08-29 豊田合成株式会社 発光装置
JP5223102B2 (ja) * 2007-08-08 2013-06-26 豊田合成株式会社 フリップチップ型発光素子
JP2009054688A (ja) * 2007-08-24 2009-03-12 Kyocera Corp 発光素子
KR101654340B1 (ko) * 2009-12-28 2016-09-06 서울바이오시스 주식회사 발광 다이오드
JP5737066B2 (ja) 2010-08-26 2015-06-17 日亜化学工業株式会社 半導体発光素子
EP2605295A3 (de) * 2011-12-13 2015-11-11 LG Innotek Co., Ltd. Ultraviolett-Licht emittierende Vorrichtung
US20150021626A1 (en) * 2012-04-27 2015-01-22 Panasonic Corporation Light-emitting device
CN104756267A (zh) * 2012-10-25 2015-07-01 松下知识产权经营株式会社 发光装置及其制造方法以及发光装置安装体
DE202013012758U1 (de) * 2012-12-06 2019-04-29 Seoul Viosys Co., Ltd. Lichtemittierende Diode und Anwendung dafür
JP2015028984A (ja) 2013-07-30 2015-02-12 日亜化学工業株式会社 半導体発光素子
JP6514438B2 (ja) * 2014-03-26 2019-05-15 旭化成エレクトロニクス株式会社 赤外線発光素子
US20150364651A1 (en) * 2014-06-12 2015-12-17 Toshiba Corporation Flip-Chip Light Emitting Diode Assembly With Relief Channel
JP6927970B2 (ja) * 2015-11-20 2021-09-01 ルミレッズ ホールディング ベーフェー 異なる電気的構成を可能にするダイボンドパッド設計
CN116314526A (zh) * 2015-12-02 2023-06-23 亮锐控股有限公司 用于优化的热阻、焊接可靠性和smt加工良率的led金属焊盘配置
KR102617466B1 (ko) 2016-07-18 2023-12-26 주식회사 루멘스 마이크로 led 어레이 디스플레이 장치
JP6942589B2 (ja) * 2017-09-27 2021-09-29 旭化成株式会社 半導体発光装置および紫外線発光モジュール
CN114551679B (zh) * 2022-02-18 2023-09-15 聚灿光电科技(宿迁)有限公司 一种新型led芯片制造方法

Similar Documents

Publication Publication Date Title
JP2006012916A5 (de)
TWI301679B (en) Semiconductor light emitting device and method of fabricating the same
JP2011129920A5 (de)
WO2008112064A3 (en) Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures
JP2014053606A5 (de)
TW200511612A (en) Mount for semiconductor light emitting device
TW200746474A (en) Semiconductor device and semiconductor device fabrication method
WO2010047553A3 (ko) 반도체 발광 소자
WO2008051596A3 (en) Solid state light sheet and encapsulated bare die semiconductor circuits
JP2010165673A5 (ja) 発光装置
EP2180532A3 (de) Lichtemittierendes Halbleiterbauelement
TW200616145A (en) 3D interconnect with protruding contacts
JP2004127933A5 (de)
EP2187443A3 (de) Lichtemittierende Vorrichtung, Herstellungsverfahren dafür und Mobiltelefon
TW200512948A (en) Light-emitting device capable of increasing light-emitting active region
JP2010087494A5 (ja) 半導体装置
WO2010150114A3 (en) Contact for a semiconductor light emitting device
TW200612586A (en) Organic light emitting diode display and manufacturing method thereof
TW200614614A (en) Nitride-based compound semiconductor light emitting device, structural unit thereof, and fabricating method thereof
JP3175334U7 (de)
JP2005191326A5 (de)
WO2009125953A3 (ko) 발광 소자
EP2388834A3 (de) Lichtemittierende Vorrichtung, Gehäuse für lichtemittierende Vorrichtung und Beleuchtungssystem
WO2009126010A3 (ko) 발광 소자
ATE520152T1 (de) Leistungshalbleiterbauelement