JP2005535109A - 半導体構造内の溝形状部および浮彫り形状部の充填方法 - Google Patents
半導体構造内の溝形状部および浮彫り形状部の充填方法 Download PDFInfo
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Abstract
Description
既に溝構造および浮彫り構造が形成され、これから図1b〜eに示す本発明の方法に基づいて充填が行われる段階にある半導体基板1の図を図1aに示す。図1bに示すように、溝構造および浮彫り構造の内側に第1充填層を堆積させる。この第1充填層は、非常に滑らかな表面を有するドープされていない非晶質シリコンを含んでいる。その後、このSi層に、好ましくはプラズマ化学エッチング工程(plasmachemischen Aetzschrittes)によって、V字形状の輪郭(V-Profil)(図1c)を形成する。このエッチング工程では、溝の深部に行くに従って、エッチング率が表面層よりも有意に小さくなくなり、深さ400〜1000nmではゼロになるように、エッチング率を調整する(ARDE:アスペクト比率に応じたエッチング(aspect ratio depended etch)/RIE遅延(RIE lag))。続いて、V字にエッチングされたSi層を、気相ドープ(好ましくは、アルシン(Arsin))によって高度にドープする。
個々の溝充填の工程について、図2a〜図2iに示す。開始点は、前述と同様に、図2aのような既に準備された溝構造および浮彫り構造である。
この実施例では、STI充填部(トレンチ分離部(shallowtrenchisolation))において隙間が生じるのが防止される。この実施例については、図面を参照せずに説明する。
ここでは、第1充填層を堆積させた後にV字エッチング工程を行うことによって、隣接するゲート/ワード配線または金属化軌道(Metallisierungsbahnen)間の絶縁間隙部(Isolationsgap-Zwischenraeume)を2段階充填することについて、図を参照せずに説明する。
第1充填層の堆積後にV字エッチング工程(V-Aetzschritt)を行う、2段階の接触プラグ充填について、以下に図を参照せずに説明する。ここでは、接触窓の導電性充填部における隙間が生じるのが回避される。
2 第1充填層
3 第2充填層
4 充填補助層
Claims (16)
- 半導体基板に形成された溝構造および浮彫り構造の充填方法において、
第1堆積プロセスにおいて、高度に均一で、かつ、極めて滑らかな第1の一次充填層(2)によって、上記溝構造および浮彫り構造を被覆し、
V字断面を生成するために、溝構造の所定の深さに達するV字エッチングを続いて実施し、
溝構造および浮彫り構造が完全に閉鎖されるまで、高度に均一で、かつ、極めて滑らかな第2の一次充填層(3)を堆積させる、半導体基板に形成された溝構造および浮彫り構造の充填方法。 - 上記第1充填層(2)の堆積後、この第1充填層(2)上に、充填補助層(4)を堆積させ、続いて、基板表層部を平坦化する方法によってこの充填補助層(4)を元のように除去し、
上記半導体基板(1)の表層部の第1充填層(2)が完全に除去されるまで、主に等方性に作用する湿式化学エッチング工程を実施し、
第1充填層(2)と比較して高い選択性を有し、溝構造および浮彫り構造に残留している充填補助層(4)の材料を元のように完全に除去する湿式化学エッチングを続いて実施し、
その後、上記第2充填層(3)を堆積させることを特徴とする、請求項1に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。 - 上記充填補助層(4)が、ドープされたSiO2を含むことを特徴とする、請求項2に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第1充填層を、溝構造および浮彫り構造の幅の約10〜30%に相当する厚みに堆積させることを特徴とする、請求項1〜3のいずれか1項に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第2充填層(3)を、溝構造および浮彫り構造の幅の50〜100%の大きさに相当する厚みで堆積させる、請求項1または2に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記V字エッチングを、プラズマ化学エッチングによって行うことを特徴とする、請求項1または2に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 溝構造および浮彫り構造の深部でのエッチング率が半導体基板(1)の表層部でのエッチング率よりも有意に低くなるように、上記エッチング工程のエッチング率を設定することを特徴とする、請求項6に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第1充填層(2)が、非晶質となるように堆積されたポリシリコンを含むことを特徴とする、請求項1〜4のいずれか1項に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- V字エッチングの後、上記第1充填層(2)を気相拡散によってドープすることを特徴とする、請求項8に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第1充填層(2)がSiO2を含むことを特徴とする、請求項1〜4のいずれか1項に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第1充填層が金属を含むことを特徴とする、請求項1〜4のいずれかに記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記金属層が、接触障壁層および金属充填層を含む二重層として形成されていることを特徴とする、請求項11に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第2充填層(3)が、非晶質となるように堆積され高度にドープされたポリシリコンを含むことを特徴とする、請求項1,2および5に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記ポリシリコンがAsによってドープされていることを特徴とする、請求項13に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第2充填層(3)がSiO2を含むことを特徴とする、請求項1,2および5に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
- 上記第2充填層(3)が金属を含むことを特徴とする、請求項1,2および5に記載の半導体基板に形成された溝構造および浮彫り構造の充填方法。
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DE10225941A DE10225941A1 (de) | 2002-06-11 | 2002-06-11 | Verfahren zur Füllung von Graben- und Reliefgeometrien in Halbleiterstrukturen |
PCT/DE2003/001923 WO2003105220A1 (de) | 2002-06-11 | 2003-06-10 | Verfahren zur füllung von graben- und reliefgeometrien in halbleiterstrukturen |
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JP2013033933A (ja) * | 2011-06-30 | 2013-02-14 | Tokyo Electron Ltd | シリコン膜の形成方法およびその形成装置 |
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DE102004020834B4 (de) * | 2004-04-28 | 2010-07-15 | Qimonda Ag | Herstellungsverfahren für eine Halbleiterstruktur |
US7109097B2 (en) * | 2004-12-14 | 2006-09-19 | Applied Materials, Inc. | Process sequence for doped silicon fill of deep trenches |
CN105826312B (zh) * | 2015-01-04 | 2019-01-11 | 旺宏电子股份有限公司 | 半导体元件及其制造方法 |
CN109920760B (zh) * | 2017-12-12 | 2021-01-12 | 联华电子股份有限公司 | 半导体装置的形成方法 |
US11404465B2 (en) * | 2020-06-15 | 2022-08-02 | Taiwan Semiconductor Manufacturing Company Limited | Epitaxial semiconductor liner for enhancing uniformity of a charged layer in a deep trench and methods of forming the same |
CN113327886A (zh) * | 2021-05-28 | 2021-08-31 | 上海华力微电子有限公司 | 避免层间介质填充过程中形成缝隙的方法 |
CN113611661B (zh) * | 2021-08-02 | 2023-06-13 | 长鑫存储技术有限公司 | 半导体结构的制备方法及半导体结构 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4666737A (en) * | 1986-02-11 | 1987-05-19 | Harris Corporation | Via metallization using metal fillets |
US4833094A (en) * | 1986-10-17 | 1989-05-23 | International Business Machines Corporation | Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes |
US5346585A (en) * | 1993-04-20 | 1994-09-13 | Micron Semiconductor, Inc. | Use of a faceted etch process to eliminate stringers |
JPH07161703A (ja) * | 1993-12-03 | 1995-06-23 | Ricoh Co Ltd | 半導体装置の製造方法 |
US5451809A (en) * | 1994-09-07 | 1995-09-19 | Kabushiki Kaisha Toshiba | Smooth surface doped silicon film formation |
US6207494B1 (en) * | 1994-12-29 | 2001-03-27 | Infineon Technologies Corporation | Isolation collar nitride liner for DRAM process improvement |
US6191026B1 (en) * | 1996-01-09 | 2001-02-20 | Applied Materials, Inc. | Method for submicron gap filling on a semiconductor substrate |
US5933746A (en) * | 1996-04-23 | 1999-08-03 | Harris Corporation | Process of forming trench isolation device |
US5904561A (en) * | 1996-06-28 | 1999-05-18 | Vanguard International Semiconductor Corporation | Method for forming a barrier metal film with conformal step coverage in a semiconductor intergrated circuit |
US6077786A (en) * | 1997-05-08 | 2000-06-20 | International Business Machines Corporation | Methods and apparatus for filling high aspect ratio structures with silicate glass |
KR100272523B1 (ko) * | 1998-01-26 | 2000-12-01 | 김영환 | 반도체소자의배선형성방법 |
US6066566A (en) * | 1998-01-28 | 2000-05-23 | International Business Machines Corporation | High selectivity collar oxide etch processes |
US6030881A (en) * | 1998-05-05 | 2000-02-29 | Novellus Systems, Inc. | High throughput chemical vapor deposition process capable of filling high aspect ratio structures |
US6074954A (en) * | 1998-08-31 | 2000-06-13 | Applied Materials, Inc | Process for control of the shape of the etch front in the etching of polysilicon |
US6124203A (en) * | 1998-12-07 | 2000-09-26 | Advanced Micro Devices, Inc. | Method for forming conformal barrier layers |
KR100335495B1 (ko) * | 1999-11-12 | 2002-05-08 | 윤종용 | 디봇 발생을 방지하며 공정이 간단한 소자분리막의 제조방법 |
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- 2003-06-10 JP JP2004512190A patent/JP4083739B2/ja not_active Expired - Fee Related
- 2003-06-10 DE DE50306393T patent/DE50306393D1/de not_active Expired - Lifetime
- 2003-06-10 EP EP03756972A patent/EP1525611B1/de not_active Expired - Fee Related
- 2003-06-10 WO PCT/DE2003/001923 patent/WO2003105220A1/de active IP Right Grant
- 2003-06-11 TW TW092115895A patent/TW200402848A/zh unknown
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013033933A (ja) * | 2011-06-30 | 2013-02-14 | Tokyo Electron Ltd | シリコン膜の形成方法およびその形成装置 |
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EP1525611A1 (de) | 2005-04-27 |
KR20050007599A (ko) | 2005-01-19 |
US7265025B2 (en) | 2007-09-04 |
JP4083739B2 (ja) | 2008-04-30 |
TW200402848A (en) | 2004-02-16 |
DE50306393D1 (de) | 2007-03-15 |
WO2003105220A1 (de) | 2003-12-18 |
EP1525611B1 (de) | 2007-01-24 |
KR100628594B1 (ko) | 2006-09-26 |
US20050148171A1 (en) | 2005-07-07 |
DE10225941A1 (de) | 2004-01-08 |
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