JP2005532696A - 光検出器回路 - Google Patents
光検出器回路 Download PDFInfo
- Publication number
- JP2005532696A JP2005532696A JP2004520810A JP2004520810A JP2005532696A JP 2005532696 A JP2005532696 A JP 2005532696A JP 2004520810 A JP2004520810 A JP 2004520810A JP 2004520810 A JP2004520810 A JP 2004520810A JP 2005532696 A JP2005532696 A JP 2005532696A
- Authority
- JP
- Japan
- Prior art keywords
- window
- layer
- insulating layer
- substrate
- epitaxial layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 238000000034 method Methods 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 11
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 10
- 239000010703 silicon Substances 0.000 claims abstract description 10
- 238000009279 wet oxidation reaction Methods 0.000 claims abstract description 3
- 230000001681 protective effect Effects 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 2
- 238000010292 electrical insulation Methods 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 235000012239 silicon dioxide Nutrition 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 11
- 230000007547 defect Effects 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000000206 photolithography Methods 0.000 abstract description 6
- 239000012535 impurity Substances 0.000 abstract description 4
- 230000015572 biosynthetic process Effects 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract description 3
- 230000001627 detrimental effect Effects 0.000 abstract description 3
- 239000012212 insulator Substances 0.000 abstract description 3
- 239000002019 doping agent Substances 0.000 abstract description 2
- 230000015556 catabolic process Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 3
- 238000003491 array Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000013632 homeostatic process Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14687—Wafer level processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
本発明によると、電気的に絶縁された層内に形成された窓内に光ダイオードを製造する方法が提供され、この方法は、第1の電気的絶縁層を半導体基板上に設け、第1の窓を該第1の絶縁層内に形成して該第1の窓内の基板の領域を露出させ、保護環を該第1の窓内の基板の露出された領域内に形成し、第2の電気的絶縁層を設けて該第1の窓内の基板の露出された領域を覆い、該第2の絶縁層内に第2の窓を形成して該第1の窓内の該基板の選択された領域を露出させ、該第2の窓によって露出された該基板の選択された領域上にエピタキシャル層を成長させて光ダイオードの活性領域を設ける段階を含み、該エピタキシャル層の縁部が、該第1の窓の内周から間隔を置いて配置されるようになる。
本発明をより完全に理解するようにするために、本発明の実施形態が、添付図面を参照し、例として、ここで記載される。
Claims (24)
- 光ダイオードを組み込んだ光検出器回路の製造方法であって、前記方法が、第1の電気的絶縁層を半導体基板上に設け、第1の窓を前記第1の絶縁層内に形成して前記第1の窓内の前記基板の領域を露出させ、保護環を該第1の窓内の該基板の前記露出された領域内に形成し、第2の電気的絶縁層を設けて該第1の窓内の該基板の該露出された領域を覆い、第2の窓を前記第2の絶縁層内に形成して該第1の窓内の該基板の選択された領域を露出させ、前記光ダイオード検出器の活性領域を提供するエピタキシャル層を、前記第2の窓によって露出された該基板の選択された領域上に、前記エピタキシャル層の縁部が、該第1の窓の内周から間隔を置いて位置するように成長させる段階を含む、ことを特徴とする方法。
- 前記窓の範囲は、保護環が前記エピタキシャル層の前記縁部に重なり合わせられるようなものであることを特徴とする請求項1に記載の方法。
- 前記第2の絶縁層の一部を前記第1の窓の内周内に残すように前記第2の窓が該第2の絶縁層内に形成され、該第2の窓は、前記エピタキシャル層の成長中に、該エピタキシャル層の前記縁部が該第1の窓の内周から間隔を置いて配置されることを確実にすることを特徴とする請求項1又は請求項2に記載の方法。
- 前記第2の絶縁層の前記残りの環状部分が、ウェット酸化エッチングによって取り除かれることを特徴とする請求項3に記載の方法。
- 前記第1の窓を覆う更に別の電気的絶縁層が前記1の絶縁層上に設けられ、該第1の窓内の前記基板の前記露出された領域を覆う前記第2の絶縁層を形成する前に、該第1の窓内の該基板の選択された領域を露出するように、更に別の窓が前記更に別の絶縁層内に形成されることを特徴とする前記請求項のいずれか1項に記載の方法。
- 前記第2の絶縁層が前記更に別の絶縁層より大幅に薄いことを特徴とする請求項5に記載の方法。
- 前記第2の絶縁層が10nmから50nmまで、好ましくは約25nmの厚さを有することを特徴とする請求項5に記載の方法。
- 最初に述べたエピタキシャル層の上部に、前記最初に述べたエピタキシャル層より高いドーピング・レベルを有する更に別のエピタキシャル層を成長させる段階を含むことを特徴とする前記請求項のいずれか1項に記載の方法。
- 基板内の前記保護環とオーム接触状態になるように、前記更に別のエピタキシャル層が前記基板に接触することを特徴とする請求項8に記載の方法。
- 前記光ダイオード検出器がアバランシェ光ダイオードであることを特徴とする前記請求項のいずれか1項に記載の方法。
- 読出回路が前記第1の絶縁層上に形成されたことを特徴とする前記請求項のいずれか1項に記載の方法。
- 光ダイオードを含む光検出器回路であって、前記回路が、半導体基板と、前記基板上の第1の電気的絶縁層と、前記第1の電気的絶縁層内の第1の窓と、前記第1の窓内にある該基板内の保護環と、前記第1の電気的絶縁層上の第2の電気的絶縁層と、該第1の窓内にある前記第2の電気的絶縁層内の第2の窓と、前記光ダイオードの活性領域を形成する該基板上のエピタキシャル層とからなり、前記エピタキシャル層が前記第2の窓内に配置され、該エピタキシャル層の縁部が、該第1の窓の内周から間隔を置いて位置するようになったことを特徴とする光検出器回路。
- 前記光ダイオードがアバランシェ光ダイオードであることを特徴とする請求項12に記載の光検出器回路。
- 前記保護環が、前記エピタキシャル層の縁部に重なり合わせられたことを特徴とする請求項12又は請求項13に記載の光検出器回路。
- 前記最初に述べたエピタキシャル層より高いドーピング・レベルを有する更に別のエピタキシャル層が、該最初に述べたエピタキシャル層の上部に設けられたことを特徴とする請求項12、請求項13、又は請求項14に記載の光検出器回路。
- 前記更に別のエピタキシャル層が、前記第2の絶縁層と重なり合う接触層を構成することを特徴とする請求項15に記載の光検出器回路。
- 前記更に別のエピタキシャル層が、前記基板内の前記保護環とオーム接触状態にあることを特徴とする請求項15又は請求項16に記載の光検出器回路。
- 金属接点が、前記更に別のエピタキシャル層上に設けられたことを特徴とする請求項15、請求項16、又は請求項17に記載の光検出器回路。
- 前記絶縁層が二酸化シリコンから製造されたことを特徴とする請求項12乃至請求項18のいずれか1項に記載の光検出器回路。
- 前記エピタキシャル層又は各々のエピタキシャル層がシリコンから製造されたことを特徴とする請求項12乃至請求項19のいずれか1項に記載の光検出器回路。
- 読出回路が、前記第1の絶縁層上に形成されたことを特徴とする請求項12乃至請求項20のいずれか1項に記載の光検出器回路。
- 請求項12乃至請求項21のいずれか1項に記載の光検出器回路のアレイ。
- 添付図面を参照して実質的に上記された光検出器回路。
- 添付図面を参照して実質的に上記された光ダイオードの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB0216069.5A GB0216069D0 (en) | 2002-07-11 | 2002-07-11 | Photodetector circuits |
PCT/GB2003/002865 WO2004008549A2 (en) | 2002-07-11 | 2003-07-03 | Photodetector circuits |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2005532696A true JP2005532696A (ja) | 2005-10-27 |
Family
ID=9940243
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004520810A Pending JP2005532696A (ja) | 2002-07-11 | 2003-07-03 | 光検出器回路 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7271376B2 (ja) |
EP (1) | EP1532693A2 (ja) |
JP (1) | JP2005532696A (ja) |
AU (1) | AU2003251151A1 (ja) |
CA (1) | CA2492731A1 (ja) |
GB (1) | GB0216069D0 (ja) |
TW (1) | TWI286357B (ja) |
WO (1) | WO2004008549A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8350937B2 (en) | 2009-01-05 | 2013-01-08 | Sony Corporation | Solid-state imaging device having pixels including avalanche photodiodes |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4200463B2 (ja) * | 2006-07-07 | 2008-12-24 | Tdk株式会社 | 受光素子及びそれを用いた光ヘッド並びにそれを用いた光記録再生装置 |
US7586602B2 (en) * | 2006-07-24 | 2009-09-08 | General Electric Company | Method and apparatus for improved signal to noise ratio in Raman signal detection for MEMS based spectrometers |
EP2549536B1 (de) * | 2011-07-22 | 2020-08-19 | Espros Photonics AG | Halbleiterstruktur zur Photonendetektion |
CN114792742B (zh) * | 2022-04-22 | 2024-04-02 | 深圳大学 | 一种基于改性SnTe薄膜的光电传感器及其制备方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020024058A1 (en) * | 2000-08-16 | 2002-02-28 | Marshall Gillian F. | Photodetector circuit |
Family Cites Families (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4127932A (en) | 1976-08-06 | 1978-12-05 | Bell Telephone Laboratories, Incorporated | Method of fabricating silicon photodiodes |
JPS5591184A (en) | 1978-12-27 | 1980-07-10 | Fujitsu Ltd | Photodiode |
US4442444A (en) | 1980-07-08 | 1984-04-10 | Fujitsu Limited | Avalanche photodiodes |
JPS57211812A (en) | 1981-06-24 | 1982-12-25 | Iwatsu Electric Co Ltd | Wide band amplifier |
JPS58223382A (ja) * | 1982-06-21 | 1983-12-24 | Toshiba Corp | 半導体発光装置 |
JPS60116182A (ja) | 1983-11-29 | 1985-06-22 | Fujitsu Ltd | 半導体光検出器 |
US4689305A (en) | 1986-03-24 | 1987-08-25 | The United States Of America As Represented By The Secretary Of The Navy | Solid-state photometer circuit |
GB2202624A (en) | 1987-03-23 | 1988-09-28 | Dr Basil Polychronopulos | Optimum biasing system for electronic devices |
US5198380A (en) * | 1988-06-08 | 1993-03-30 | Sundisk Corporation | Method of highly compact EPROM and flash EEPROM devices |
JPH02159775A (ja) | 1988-12-14 | 1990-06-19 | Toshiba Corp | 半導体受光素子及びその製造方法 |
EP0540235A3 (en) | 1991-10-30 | 1993-09-29 | American Telephone And Telegraph Company | Article comprising a quantum well infrared photodetector |
US5236871A (en) | 1992-04-29 | 1993-08-17 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Method for producing a hybridization of detector array and integrated circuit for readout |
US5293050A (en) | 1993-03-25 | 1994-03-08 | International Business Machines Corporation | Semiconductor quantum dot light emitting/detecting devices |
US5483200A (en) | 1993-06-08 | 1996-01-09 | Sharp Kabushiki Kaisha | Light-receiving and amplifying device capable of switching between gain levels at high speed and obtaining a sufficient signal-to-noise ratio over a wide range in quantity of incident light |
US5596186A (en) * | 1993-12-08 | 1997-01-21 | Nikon Corporation | High sensitivity silicon avalanche photodiode |
US6570617B2 (en) | 1994-01-28 | 2003-05-27 | California Institute Of Technology | CMOS active pixel sensor type imaging system on a chip |
JPH08125152A (ja) | 1994-10-28 | 1996-05-17 | Canon Inc | 半導体装置、それを用いた相関演算装置、ad変換器、da変換器、信号処理システム |
US5625210A (en) | 1995-04-13 | 1997-04-29 | Eastman Kodak Company | Active pixel sensor integrated with a pinned photodiode |
US5621227A (en) | 1995-07-18 | 1997-04-15 | Discovery Semiconductors, Inc. | Method and apparatus for monolithic optoelectronic integrated circuit using selective epitaxy |
JP2748914B2 (ja) | 1996-01-25 | 1998-05-13 | 日本電気株式会社 | 光検出用半導体装置 |
JP2748917B2 (ja) | 1996-03-22 | 1998-05-13 | 日本電気株式会社 | 半導体装置 |
JPH10190041A (ja) | 1996-12-27 | 1998-07-21 | Hamamatsu Photonics Kk | ホトダイオード |
US6005266A (en) | 1997-03-13 | 1999-12-21 | The Trustees Of Princeton University | Very low leakage JFET for monolithically integrated arrays |
DE19714054A1 (de) | 1997-04-05 | 1998-10-08 | Daimler Benz Ag | SiGe-Photodetektor mit hohem Wirkungsgrad |
US6107619A (en) | 1997-07-14 | 2000-08-22 | California Institute Of Technology | Delta-doped hybrid advanced detector for low energy particle detection |
AU2185499A (en) | 1998-01-30 | 1999-08-16 | Hamamatsu Photonics K.K. | Light-receiving semiconductor device with buit-in bicmos and avalanche photodiode |
US6188056B1 (en) | 1998-06-24 | 2001-02-13 | Stmicroelectronics, Inc. | Solid state optical imaging pixel with resistive load |
US6417504B1 (en) | 2000-09-29 | 2002-07-09 | Innovative Technology Licensing, Llc | Compact ultra-low noise high-bandwidth pixel amplifier for single-photon readout of photodetectors |
JP3910817B2 (ja) * | 2000-12-19 | 2007-04-25 | ユーディナデバイス株式会社 | 半導体受光装置 |
-
2002
- 2002-07-11 GB GBGB0216069.5A patent/GB0216069D0/en not_active Ceased
-
2003
- 2003-07-03 AU AU2003251151A patent/AU2003251151A1/en not_active Abandoned
- 2003-07-03 CA CA002492731A patent/CA2492731A1/en not_active Abandoned
- 2003-07-03 EP EP03763965A patent/EP1532693A2/en not_active Withdrawn
- 2003-07-03 WO PCT/GB2003/002865 patent/WO2004008549A2/en active Application Filing
- 2003-07-03 JP JP2004520810A patent/JP2005532696A/ja active Pending
- 2003-07-03 US US10/520,850 patent/US7271376B2/en not_active Expired - Lifetime
- 2003-07-10 TW TW092118847A patent/TWI286357B/zh not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020024058A1 (en) * | 2000-08-16 | 2002-02-28 | Marshall Gillian F. | Photodetector circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8350937B2 (en) | 2009-01-05 | 2013-01-08 | Sony Corporation | Solid-state imaging device having pixels including avalanche photodiodes |
Also Published As
Publication number | Publication date |
---|---|
GB0216069D0 (en) | 2002-08-21 |
WO2004008549A2 (en) | 2004-01-22 |
TW200403769A (en) | 2004-03-01 |
US7271376B2 (en) | 2007-09-18 |
US20050258340A1 (en) | 2005-11-24 |
CA2492731A1 (en) | 2004-01-22 |
WO2004008549A3 (en) | 2004-10-14 |
AU2003251151A1 (en) | 2004-02-02 |
EP1532693A2 (en) | 2005-05-25 |
TWI286357B (en) | 2007-09-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10861988B2 (en) | Image sensor with an absorption enhancement semiconductor layer | |
US11830892B2 (en) | Image sensor with a high absorption layer | |
JP4715203B2 (ja) | 光検出器回路 | |
KR100694470B1 (ko) | 이미지 센서 제조 방법 | |
US9659994B2 (en) | Imaging device and electronic apparatus | |
TW202010117A (zh) | 具有改進的電位井容量的影像感測器及相關製造方法 | |
KR100657143B1 (ko) | 이미지 센서 및 그 제조 방법 | |
US6215165B1 (en) | Reduced leakage trench isolation | |
US7537971B2 (en) | Method for fabricating CMOS image sensor | |
KR101002122B1 (ko) | 이미지센서 및 그 제조방법 | |
US6096573A (en) | Method of manufacturing a CMOS sensor | |
JP2005532696A (ja) | 光検出器回路 | |
US20080017893A1 (en) | Back-lit image sensor | |
JP2009111118A (ja) | 裏面照射型固体撮像素子およびその製造方法 | |
KR100548613B1 (ko) | 블루레이용 수광소자 및 그 제조방법 | |
US6153446A (en) | Method for forming a metallic reflecting layer in a semiconductor photodiode | |
JPH11163386A (ja) | 半導体装置 | |
US6228674B1 (en) | CMOS sensor and method of manufacture | |
JPS5823992B2 (ja) | 固体撮像装置 | |
FR2641647A1 (fr) | Photodiode a avalanche au silicium a faible bruit de multiplication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060629 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20100208 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100427 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100510 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20101018 |