JP2005526379A - Ｍｒａｍデバイスのクラッド磁界強化 - Google Patents

Ｍｒａｍデバイスのクラッド磁界強化 Download PDF

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Publication number
JP2005526379A
JP2005526379A JP2003544761A JP2003544761A JP2005526379A JP 2005526379 A JP2005526379 A JP 2005526379A JP 2003544761 A JP2003544761 A JP 2003544761A JP 2003544761 A JP2003544761 A JP 2003544761A JP 2005526379 A JP2005526379 A JP 2005526379A
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Japan
Prior art keywords
region
ferromagnetic cladding
cladding region
trench
width
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JP2003544761A
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English (en)
Japanese (ja)
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JP2005526379A5 (enExample
Inventor
ディ． リゾ、ニコラス
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Motorola Solutions Inc
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Motorola Inc
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Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JP2005526379A publication Critical patent/JP2005526379A/ja
Publication of JP2005526379A5 publication Critical patent/JP2005526379A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1655—Bit-line or column circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1653—Address circuits or decoders
    • G11C11/1657—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Hall/Mr Elements (AREA)
JP2003544761A 2001-11-13 2002-10-30 Ｍｒａｍデバイスのクラッド磁界強化 Pending JP2005526379A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1057401P 2001-11-13 2001-11-13
US10/010,574 US6559511B1 (en) 2001-11-13 2001-11-13 Narrow gap cladding field enhancement for low power programming of a MRAM device
PCT/US2002/034954 WO2003043019A1 (en) 2001-11-13 2002-10-30 Cladding field enhancement of an mram device

Publications (2)

Publication Number Publication Date
JP2005526379A true JP2005526379A (ja) 2005-09-02
JP2005526379A5 JP2005526379A5 (enExample) 2010-11-25

Family

ID=39865441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003544761A Pending JP2005526379A (ja) 2001-11-13 2002-10-30 Ｍｒａｍデバイスのクラッド磁界強化

Country Status (3)

Country Link
US (1) US6559511B1 (enExample)
JP (1) JP2005526379A (enExample)
WO (1) WO2003043019A1 (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030075778A1 (en) * 1997-10-01 2003-04-24 Patrick Klersy Programmable resistance memory element and method for making same
US6661688B2 (en) * 2001-12-05 2003-12-09 Hewlett-Packard Development Company, L.P. Method and article for concentrating fields at sense layers
US6927072B2 (en) * 2002-03-08 2005-08-09 Freescale Semiconductor, Inc. Method of applying cladding material on conductive lines of MRAM devices
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
US7056749B2 (en) * 2003-03-03 2006-06-06 Hewlett-Packard Development Company, L.P. Simplified magnetic memory cell
US6925000B2 (en) 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
US7033881B2 (en) * 2004-06-15 2006-04-25 International Business Machines Corporation Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices
US7061037B2 (en) * 2004-07-06 2006-06-13 Maglabs, Inc. Magnetic random access memory with multiple memory layers and improved memory cell selectivity
KR100558012B1 (ko) * 2004-07-16 2006-03-06 삼성전자주식회사 반도체 메모리 소자
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
JP2006173472A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 磁気記憶装置およびその製造方法
US7835116B2 (en) * 2005-09-09 2010-11-16 Seagate Technology Llc Magnetoresistive stack with enhanced pinned layer
JP5076373B2 (ja) * 2006-06-27 2012-11-21 Ｔｄｋ株式会社 磁気記憶装置、磁気記憶方法
US7456029B2 (en) * 2006-06-28 2008-11-25 Magic Technologies, Inc. Planar flux concentrator for MRAM devices
JP5076387B2 (ja) * 2006-07-26 2012-11-21 Ｔｄｋ株式会社 磁気記憶装置
US7442647B1 (en) * 2008-03-05 2008-10-28 International Business Machines Corporation Structure and method for formation of cladded interconnects for MRAMs
US9472749B2 (en) 2014-03-20 2016-10-18 International Business Machines Corporation Armature-clad MRAM device

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822266B1 (enExample) * 1969-04-26 1973-07-04
JPS63224341A (ja) * 1987-03-13 1988-09-19 Nec Corp 半導体装置の配線構造
JPH09204770A (ja) * 1995-11-24 1997-08-05 Motorola Inc 磁気メモリおよびその方法
JPH11220023A (ja) * 1998-02-02 1999-08-10 Sharp Corp 半導体装置及びその製造方法
WO2000010172A2 (de) * 1998-08-12 2000-02-24 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
WO2002058166A1 (en) * 2001-01-19 2002-07-25 Matsushita Electric Industrial Co., Ltd. Magnetic storage element, production method and driving method therefor, and memory array
JP2002289807A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 磁気メモリ装置および磁気抵抗効果素子

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4965742A (enExample) * 1972-10-26 1974-06-26
US5075247A (en) * 1990-01-18 1991-12-24 Microunity Systems Engineering, Inc. Method of making hall effect semiconductor memory cell
US5926414A (en) * 1997-04-04 1999-07-20 Magnetic Semiconductors High-efficiency miniature magnetic integrated circuit structures
US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
US6430085B1 (en) * 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4822266B1 (enExample) * 1969-04-26 1973-07-04
JPS63224341A (ja) * 1987-03-13 1988-09-19 Nec Corp 半導体装置の配線構造
JPH09204770A (ja) * 1995-11-24 1997-08-05 Motorola Inc 磁気メモリおよびその方法
JPH11220023A (ja) * 1998-02-02 1999-08-10 Sharp Corp 半導体装置及びその製造方法
WO2000010172A2 (de) * 1998-08-12 2000-02-24 Infineon Technologies Ag Speicherzellenanordnung und verfahren zu deren herstellung
JP2002522915A (ja) * 1998-08-12 2002-07-23 インフィネオン テクノロジース アクチエンゲゼルシャフト メモリセル装置及び該メモリセル装置の製造方法
WO2002058166A1 (en) * 2001-01-19 2002-07-25 Matsushita Electric Industrial Co., Ltd. Magnetic storage element, production method and driving method therefor, and memory array
JP2002289807A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 磁気メモリ装置および磁気抵抗効果素子

Also Published As

Publication number Publication date
WO2003043019A1 (en) 2003-05-22
US6559511B1 (en) 2003-05-06
US20030090930A1 (en) 2003-05-15

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