JP2005526379A5 - - Google Patents

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Publication number
JP2005526379A5
JP2005526379A5 JP2003544761A JP2003544761A JP2005526379A5 JP 2005526379 A5 JP2005526379 A5 JP 2005526379A5 JP 2003544761 A JP2003544761 A JP 2003544761A JP 2003544761 A JP2003544761 A JP 2003544761A JP 2005526379 A5 JP2005526379 A5 JP 2005526379A5
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JP
Japan
Prior art keywords
trench
width
ferromagnetic cladding
metal layer
cladding region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2003544761A
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English (en)
Japanese (ja)
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JP2005526379A (ja
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Publication date
Priority claimed from US10/010,574 external-priority patent/US6559511B1/en
Application filed filed Critical
Publication of JP2005526379A publication Critical patent/JP2005526379A/ja
Publication of JP2005526379A5 publication Critical patent/JP2005526379A5/ja
Pending legal-status Critical Current

Links

JP2003544761A 2001-11-13 2002-10-30 Ｍｒａｍデバイスのクラッド磁界強化 Pending JP2005526379A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US1057401P 2001-11-13 2001-11-13
US10/010,574 US6559511B1 (en) 2001-11-13 2001-11-13 Narrow gap cladding field enhancement for low power programming of a MRAM device
PCT/US2002/034954 WO2003043019A1 (en) 2001-11-13 2002-10-30 Cladding field enhancement of an mram device

Publications (2)

Publication Number Publication Date
JP2005526379A JP2005526379A (ja) 2005-09-02
JP2005526379A5 true JP2005526379A5 (enExample) 2010-11-25

Family

ID=39865441

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2003544761A Pending JP2005526379A (ja) 2001-11-13 2002-10-30 Ｍｒａｍデバイスのクラッド磁界強化

Country Status (3)

Country Link
US (1) US6559511B1 (enExample)
JP (1) JP2005526379A (enExample)
WO (1) WO2003043019A1 (enExample)

Families Citing this family (17)

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Publication number Priority date Publication date Assignee Title
US20030075778A1 (en) * 1997-10-01 2003-04-24 Patrick Klersy Programmable resistance memory element and method for making same
US6661688B2 (en) * 2001-12-05 2003-12-09 Hewlett-Packard Development Company, L.P. Method and article for concentrating fields at sense layers
US6927072B2 (en) * 2002-03-08 2005-08-09 Freescale Semiconductor, Inc. Method of applying cladding material on conductive lines of MRAM devices
JP3906145B2 (ja) * 2002-11-22 2007-04-18 株式会社東芝 磁気ランダムアクセスメモリ
US7056749B2 (en) * 2003-03-03 2006-06-06 Hewlett-Packard Development Company, L.P. Simplified magnetic memory cell
US6925000B2 (en) 2003-12-12 2005-08-02 Maglabs, Inc. Method and apparatus for a high density magnetic random access memory (MRAM) with stackable architecture
US7033881B2 (en) * 2004-06-15 2006-04-25 International Business Machines Corporation Method for fabricating magnetic field concentrators as liners around conductive wires in microelectronic devices
US7061037B2 (en) * 2004-07-06 2006-06-13 Maglabs, Inc. Magnetic random access memory with multiple memory layers and improved memory cell selectivity
KR100558012B1 (ko) * 2004-07-16 2006-03-06 삼성전자주식회사 반도체 메모리 소자
US7075818B2 (en) * 2004-08-23 2006-07-11 Maglabs, Inc. Magnetic random access memory with stacked memory layers having access lines for writing and reading
JP2006173472A (ja) * 2004-12-17 2006-06-29 Toshiba Corp 磁気記憶装置およびその製造方法
US7835116B2 (en) * 2005-09-09 2010-11-16 Seagate Technology Llc Magnetoresistive stack with enhanced pinned layer
JP5076373B2 (ja) * 2006-06-27 2012-11-21 Ｔｄｋ株式会社 磁気記憶装置、磁気記憶方法
US7456029B2 (en) * 2006-06-28 2008-11-25 Magic Technologies, Inc. Planar flux concentrator for MRAM devices
JP5076387B2 (ja) * 2006-07-26 2012-11-21 Ｔｄｋ株式会社 磁気記憶装置
US7442647B1 (en) * 2008-03-05 2008-10-28 International Business Machines Corporation Structure and method for formation of cladded interconnects for MRAMs
US9472749B2 (en) 2014-03-20 2016-10-18 International Business Machines Corporation Armature-clad MRAM device

Family Cites Families (12)

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Publication number Priority date Publication date Assignee Title
JPS4822266B1 (enExample) * 1969-04-26 1973-07-04
JPS4965742A (enExample) * 1972-10-26 1974-06-26
JPS63224341A (ja) * 1987-03-13 1988-09-19 Nec Corp 半導体装置の配線構造
US5075247A (en) * 1990-01-18 1991-12-24 Microunity Systems Engineering, Inc. Method of making hall effect semiconductor memory cell
US5659499A (en) * 1995-11-24 1997-08-19 Motorola Magnetic memory and method therefor
US5926414A (en) * 1997-04-04 1999-07-20 Magnetic Semiconductors High-efficiency miniature magnetic integrated circuit structures
JPH11220023A (ja) * 1998-02-02 1999-08-10 Sharp Corp 半導体装置及びその製造方法
DE19836567C2 (de) * 1998-08-12 2000-12-07 Siemens Ag Speicherzellenanordnung mit Speicherelementen mit magnetoresistivem Effekt und Verfahren zu deren Herstellung
US6351409B1 (en) * 2001-01-04 2002-02-26 Motorola, Inc. MRAM write apparatus and method
WO2002058167A1 (en) * 2001-01-19 2002-07-25 Matsushita Electric Industrial Co., Ltd. Spin switch and magnaetic storage elemet using it
JP2002289807A (ja) * 2001-03-27 2002-10-04 Toshiba Corp 磁気メモリ装置および磁気抵抗効果素子
US6430085B1 (en) * 2001-08-27 2002-08-06 Motorola, Inc. Magnetic random access memory having digit lines and bit lines with shape and induced anisotropy ferromagnetic cladding layer and method of manufacture

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