JP2005522737A5 - - Google Patents
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- Publication number
- JP2005522737A5 JP2005522737A5 JP2003584818A JP2003584818A JP2005522737A5 JP 2005522737 A5 JP2005522737 A5 JP 2005522737A5 JP 2003584818 A JP2003584818 A JP 2003584818A JP 2003584818 A JP2003584818 A JP 2003584818A JP 2005522737 A5 JP2005522737 A5 JP 2005522737A5
- Authority
- JP
- Japan
- Prior art keywords
- supercritical
- low
- dielectric material
- silylating agent
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 claims 31
- 239000003989 dielectric material Substances 0.000 claims 19
- 239000003795 chemical substances by application Substances 0.000 claims 13
- 239000002904 solvent Substances 0.000 claims 10
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical compound O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims 4
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 4
- 238000004140 cleaning Methods 0.000 claims 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims 2
- KMTRUDSVKNLOMY-UHFFFAOYSA-N Ethylene carbonate Chemical compound O=C1OCCO1 KMTRUDSVKNLOMY-UHFFFAOYSA-N 0.000 claims 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical group CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 238000001035 drying Methods 0.000 claims 2
- 239000005383 fluoride glass Substances 0.000 claims 2
- 239000011521 glass Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 125000000962 organic group Chemical group 0.000 claims 2
- 229920002120 photoresistant polymer Polymers 0.000 claims 2
- 229920000642 polymer Polymers 0.000 claims 2
- 229910000077 silane Inorganic materials 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims 2
- RPAJSBKBKSSMLJ-DFWYDOINSA-N (2s)-2-aminopentanedioic acid;hydrochloride Chemical class Cl.OC(=O)[C@@H](N)CCC(O)=O RPAJSBKBKSSMLJ-DFWYDOINSA-N 0.000 claims 1
- RJLKIAGOYBARJG-UHFFFAOYSA-N 1,3-dimethylpiperidin-2-one Chemical compound CC1CCCN(C)C1=O RJLKIAGOYBARJG-UHFFFAOYSA-N 0.000 claims 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 150000007513 acids Chemical class 0.000 claims 1
- 239000006117 anti-reflective coating Substances 0.000 claims 1
- 230000003667 anti-reflective effect Effects 0.000 claims 1
- 125000004432 carbon atom Chemical group C* 0.000 claims 1
- 229910002092 carbon dioxide Inorganic materials 0.000 claims 1
- 239000001569 carbon dioxide Substances 0.000 claims 1
- 150000002222 fluorine compounds Chemical class 0.000 claims 1
- 150000007522 mineralic acids Chemical class 0.000 claims 1
- 150000007524 organic acids Chemical class 0.000 claims 1
- 150000003961 organosilicon compounds Chemical class 0.000 claims 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 claims 1
- 150000003377 silicon compounds Chemical class 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US37282202P | 2002-04-12 | 2002-04-12 | |
| PCT/US2003/011012 WO2003087936A1 (en) | 2002-04-12 | 2003-04-11 | Method of treatment of porous dielectric films to reduce damage during cleaning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005522737A JP2005522737A (ja) | 2005-07-28 |
| JP2005522737A5 true JP2005522737A5 (cg-RX-API-DMAC7.html) | 2006-06-01 |
| JP4424998B2 JP4424998B2 (ja) | 2010-03-03 |
Family
ID=29250913
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003584818A Expired - Fee Related JP4424998B2 (ja) | 2002-04-12 | 2003-04-11 | 多孔質誘電体膜の洗浄中のダメージを低減する処理方法 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP1495366A1 (cg-RX-API-DMAC7.html) |
| JP (1) | JP4424998B2 (cg-RX-API-DMAC7.html) |
| KR (1) | KR100969027B1 (cg-RX-API-DMAC7.html) |
| CN (2) | CN100335969C (cg-RX-API-DMAC7.html) |
| AU (1) | AU2003226048A1 (cg-RX-API-DMAC7.html) |
| TW (1) | TWI272693B (cg-RX-API-DMAC7.html) |
| WO (1) | WO2003087936A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4424998B2 (ja) * | 2002-04-12 | 2010-03-03 | 東京エレクトロン株式会社 | 多孔質誘電体膜の洗浄中のダメージを低減する処理方法 |
| US20050158664A1 (en) * | 2004-01-20 | 2005-07-21 | Joshua Tseng | Method of integrating post-etching cleaning process with deposition for semiconductor device |
| JP4555698B2 (ja) * | 2005-01-27 | 2010-10-06 | 日本電信電話株式会社 | レジストパターン形成方法 |
| JP4630077B2 (ja) | 2005-01-27 | 2011-02-09 | 日本電信電話株式会社 | レジストパターン形成方法 |
| US7008853B1 (en) * | 2005-02-25 | 2006-03-07 | Infineon Technologies, Ag | Method and system for fabricating free-standing nanostructures |
| WO2006113222A2 (en) * | 2005-04-15 | 2006-10-26 | Advanced Technology Materials, Inc. | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
| JP5247999B2 (ja) * | 2005-09-29 | 2013-07-24 | 東京エレクトロン株式会社 | 基板処理方法およびコンピュータ読取可能な記憶媒体 |
| US7658802B2 (en) * | 2005-11-22 | 2010-02-09 | Applied Materials, Inc. | Apparatus and a method for cleaning a dielectric film |
| US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
| JP5173396B2 (ja) * | 2007-12-25 | 2013-04-03 | 大陽日酸株式会社 | 絶縁膜のダメージ回復処理方法 |
| JP6151484B2 (ja) | 2012-06-11 | 2017-06-21 | 東京応化工業株式会社 | リソグラフィー用洗浄液及び配線形成方法 |
| KR102783987B1 (ko) | 2018-08-03 | 2025-03-21 | 삼성전자주식회사 | 나노결정질 그래핀의 형성방법 및 이를 포함하는 소자 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5185296A (en) * | 1988-07-26 | 1993-02-09 | Matsushita Electric Industrial Co., Ltd. | Method for forming a dielectric thin film or its pattern of high accuracy on a substrate |
| GB2262465A (en) * | 1991-12-16 | 1993-06-23 | Secr Defence | Casting of aluminium-lithium alloys |
| US5479727A (en) * | 1994-10-25 | 1996-01-02 | Air Products And Chemicals, Inc. | Moisture removal and passivation of surfaces |
| US6500605B1 (en) | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| CN1216415C (zh) * | 2000-04-25 | 2005-08-24 | 东京毅力科创株式会社 | 沉积金属薄膜的方法和包括超临界干燥/清洁组件的金属沉积组合工具 |
| US6673521B2 (en) | 2000-12-12 | 2004-01-06 | Lnternational Business Machines Corporation | Supercritical fluid(SCF) silylation process |
| JP4424998B2 (ja) * | 2002-04-12 | 2010-03-03 | 東京エレクトロン株式会社 | 多孔質誘電体膜の洗浄中のダメージを低減する処理方法 |
-
2003
- 2003-04-11 JP JP2003584818A patent/JP4424998B2/ja not_active Expired - Fee Related
- 2003-04-11 WO PCT/US2003/011012 patent/WO2003087936A1/en not_active Ceased
- 2003-04-11 CN CNB038081466A patent/CN100335969C/zh not_active Expired - Lifetime
- 2003-04-11 KR KR1020047016321A patent/KR100969027B1/ko not_active Expired - Fee Related
- 2003-04-11 CN CN2007100083254A patent/CN101005024B/zh not_active Expired - Fee Related
- 2003-04-11 EP EP03746699A patent/EP1495366A1/en not_active Withdrawn
- 2003-04-11 AU AU2003226048A patent/AU2003226048A1/en not_active Abandoned
- 2003-04-14 TW TW092108563A patent/TWI272693B/zh not_active IP Right Cessation
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