JP2005522053A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2005522053A5 JP2005522053A5 JP2003582809A JP2003582809A JP2005522053A5 JP 2005522053 A5 JP2005522053 A5 JP 2005522053A5 JP 2003582809 A JP2003582809 A JP 2003582809A JP 2003582809 A JP2003582809 A JP 2003582809A JP 2005522053 A5 JP2005522053 A5 JP 2005522053A5
- Authority
- JP
- Japan
- Prior art keywords
- mask layer
- layer
- dielectric
- etch
- hard mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010410 layer Substances 0.000 claims 92
- 238000000034 method Methods 0.000 claims 19
- 238000005530 etching Methods 0.000 claims 11
- 238000000059 patterning Methods 0.000 claims 7
- 238000005498 polishing Methods 0.000 claims 6
- 239000002184 metal Substances 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 229920002120 photoresistant polymer Polymers 0.000 claims 4
- 239000011159 matrix material Substances 0.000 claims 3
- 239000002510 pyrogen Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 238000000197 pyrolysis Methods 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- 206010073306 Exposure to radiation Diseases 0.000 claims 1
- 230000003213 activating effect Effects 0.000 claims 1
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 claims 1
- 230000003628 erosive effect Effects 0.000 claims 1
- 238000003384 imaging method Methods 0.000 claims 1
- 238000002955 isolation Methods 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000003361 porogen Substances 0.000 claims 1
- 235000021395 porridge Nutrition 0.000 claims 1
- 230000005855 radiation Effects 0.000 claims 1
- 239000002356 single layer Substances 0.000 claims 1
- 239000002904 solvent Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US36948902P | 2002-04-02 | 2002-04-02 | |
| US36949002P | 2002-04-02 | 2002-04-02 | |
| PCT/US2003/009700 WO2003085724A1 (en) | 2002-04-02 | 2003-03-28 | Tri-layer masking architecture for patterning dual damascene interconnects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005522053A JP2005522053A (ja) | 2005-07-21 |
| JP2005522053A5 true JP2005522053A5 (https=) | 2006-05-25 |
| JP4546094B2 JP4546094B2 (ja) | 2010-09-15 |
Family
ID=28794365
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003582809A Expired - Fee Related JP4546094B2 (ja) | 2002-04-02 | 2003-03-28 | デュアルダマシン配線をパターン形成する三層マスキングアーキテクチャ |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6815333B2 (https=) |
| EP (1) | EP1493182B1 (https=) |
| JP (1) | JP4546094B2 (https=) |
| KR (1) | KR101051276B1 (https=) |
| CN (1) | CN100375265C (https=) |
| AU (1) | AU2003222115A1 (https=) |
| TW (1) | TWI335047B (https=) |
| WO (1) | WO2003085724A1 (https=) |
Families Citing this family (44)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6251770B1 (en) * | 1999-06-30 | 2001-06-26 | Lam Research Corp. | Dual-damascene dielectric structures and methods for making the same |
| US6933586B2 (en) * | 2001-12-13 | 2005-08-23 | International Business Machines Corporation | Porous low-k dielectric interconnects with improved adhesion produced by partial burnout of surface porogens |
| TWI335615B (en) * | 2002-12-27 | 2011-01-01 | Hynix Semiconductor Inc | Method for fabricating semiconductor device using arf photolithography capable of protecting tapered profile of hard mask |
| WO2004073018A2 (en) * | 2003-02-05 | 2004-08-26 | Dow Global Technologies Inc. | Sacrificial benzocyclobutene/norbornene polymers for making air gaps within semiconductor devices |
| US20060264065A1 (en) * | 2003-02-05 | 2006-11-23 | So Ying H | Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices |
| US7585785B2 (en) * | 2003-02-05 | 2009-09-08 | Dow Global Technologies | Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices |
| TW200505966A (en) * | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
| ITMI20031591A1 (it) * | 2003-08-01 | 2005-02-02 | St Microelectronics Srl | Metodo per fabbricare strutture di isolamento |
| US7323113B2 (en) * | 2003-11-20 | 2008-01-29 | Uchicago Argonne, Llc | Pattern transfer with self-similar sacrificial mask layer and vector magnetic field sensor |
| US7078350B2 (en) * | 2004-03-19 | 2006-07-18 | Lam Research Corporation | Methods for the optimization of substrate etching in a plasma processing system |
| TW200609118A (en) * | 2004-05-21 | 2006-03-16 | Jsr Corp | Laminated body and semiconductor device |
| KR100714284B1 (ko) * | 2004-06-25 | 2007-05-02 | 주식회사 하이닉스반도체 | 워드라인 스트래핑 구조를 갖는 반도체 메모리 소자의메탈라인 형성 방법 |
| US7129159B2 (en) * | 2004-08-17 | 2006-10-31 | International Business Machines Corporation | Integrated dual damascene RIE process with organic patterning layer |
| WO2006058150A2 (en) * | 2004-11-23 | 2006-06-01 | Massachusetts Institute Of Technology | Multilevel fabrication processing by functional regrouping of material deposition, lithography, and etching |
| US7790630B2 (en) * | 2005-04-12 | 2010-09-07 | Intel Corporation | Silicon-doped carbon dielectrics |
| KR100703559B1 (ko) * | 2005-12-28 | 2007-04-03 | 동부일렉트로닉스 주식회사 | 듀얼다마신 구조를 가지는 반도체 소자 및 그 제조방법 |
| US7602068B2 (en) | 2006-01-19 | 2009-10-13 | International Machines Corporation | Dual-damascene process to fabricate thick wire structure |
| US8071487B2 (en) * | 2006-08-15 | 2011-12-06 | United Microelectronics Corp. | Patterning method using stacked structure |
| US7732936B2 (en) * | 2006-09-06 | 2010-06-08 | Intel Corporation | Buffer coating having a physical mixture of high toughness polymer and a low shrinkage polymer |
| US7687395B2 (en) * | 2006-11-02 | 2010-03-30 | International Business Machines Corporation | Contact aperture and contact via with stepped sidewall and methods for fabrication thereof |
| KR100828029B1 (ko) * | 2006-12-11 | 2008-05-08 | 삼성전자주식회사 | 스택형 반도체 장치의 제조 방법 |
| US7947565B2 (en) * | 2007-02-07 | 2011-05-24 | United Microelectronics Corp. | Forming method of porous low-k layer and interconnect process |
| US7884019B2 (en) * | 2007-06-07 | 2011-02-08 | Texas Instruments Incorporated | Poison-free and low ULK damage integration scheme for damascene interconnects |
| US7709370B2 (en) | 2007-09-20 | 2010-05-04 | International Business Machines Corporation | Spin-on antireflective coating for integration of patternable dielectric materials and interconnect structures |
| US8084862B2 (en) * | 2007-09-20 | 2011-12-27 | International Business Machines Corporation | Interconnect structures with patternable low-k dielectrics and method of fabricating same |
| US8618663B2 (en) * | 2007-09-20 | 2013-12-31 | International Business Machines Corporation | Patternable dielectric film structure with improved lithography and method of fabricating same |
| KR101036803B1 (ko) * | 2009-07-20 | 2011-05-25 | 서울대학교산학협력단 | 전자빔 리소그라피용 레지스트 및 전자빔 리소그라피용 레지스트 현상방법 |
| JP2013520841A (ja) * | 2010-02-25 | 2013-06-06 | アプライド マテリアルズ インコーポレイテッド | プラズマ化学気相堆積による、有機官能基と共にシリコンを含有するハイブリッド前駆体を使用する超低誘電材料 |
| JP5568340B2 (ja) | 2010-03-12 | 2014-08-06 | 東京エレクトロン株式会社 | プラズマエッチング方法及びプラズマエッチング装置 |
| CN102194736B (zh) * | 2010-03-15 | 2014-01-01 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的制作方法 |
| TWI396482B (zh) * | 2010-07-30 | 2013-05-11 | 光明電子股份有限公司 | 線路基板製程及線路基板結構 |
| US9111994B2 (en) * | 2010-11-01 | 2015-08-18 | Magnachip Semiconductor, Ltd. | Semiconductor device and method of fabricating the same |
| CN102487036B (zh) * | 2010-12-01 | 2014-09-03 | 中芯国际集成电路制造(北京)有限公司 | 互连结构的制造方法 |
| JP6061610B2 (ja) * | 2012-10-18 | 2017-01-18 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| CN104183538B (zh) * | 2013-05-21 | 2018-03-30 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
| US9034748B2 (en) | 2013-09-04 | 2015-05-19 | International Business Machines Corporation | Process variability tolerant hard mask for replacement metal gate finFET devices |
| US9412581B2 (en) * | 2014-07-16 | 2016-08-09 | Applied Materials, Inc. | Low-K dielectric gapfill by flowable deposition |
| US20160133572A1 (en) * | 2014-11-07 | 2016-05-12 | Globalfoundries Inc. | Methods of forming a protective layer on an insulating layer for protection during formation of conductive structures |
| KR102399345B1 (ko) * | 2014-11-12 | 2022-05-19 | 삼성전자주식회사 | 반도체 장치의 제조 방법 |
| CN106356330B (zh) * | 2015-07-17 | 2019-03-29 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构的形成方法 |
| US9659874B2 (en) * | 2015-10-14 | 2017-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming deep trench and deep trench isolation structure |
| US10242872B2 (en) * | 2017-03-21 | 2019-03-26 | International Business Machines Corporation | Rework of patterned dielectric and metal hardmask films |
| US10643858B2 (en) | 2017-10-11 | 2020-05-05 | Samsung Electronics Co., Ltd. | Method of etching substrate |
| US12334398B2 (en) | 2021-08-23 | 2025-06-17 | International Business Machines Corporation | Multilayer dielectric stack for damascene top-via integration |
Family Cites Families (26)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5275695A (en) * | 1992-12-18 | 1994-01-04 | International Business Machines Corporation | Process for generating beveled edges |
| JPH08148563A (ja) * | 1994-11-22 | 1996-06-07 | Nec Corp | 半導体装置の多層配線構造体の形成方法 |
| US5550405A (en) * | 1994-12-21 | 1996-08-27 | Advanced Micro Devices, Incorporated | Processing techniques for achieving production-worthy, low dielectric, low interconnect resistance and high performance ICS |
| US6218078B1 (en) * | 1997-09-24 | 2001-04-17 | Advanced Micro Devices, Inc. | Creation of an etch hardmask by spin-on technique |
| US6140226A (en) * | 1998-01-16 | 2000-10-31 | International Business Machines Corporation | Dual damascene processing for semiconductor chip interconnects |
| JP3102409B2 (ja) * | 1998-04-30 | 2000-10-23 | 日本電気株式会社 | 配線の形成方法及びプラズマアッシング装置 |
| US6071809A (en) | 1998-09-25 | 2000-06-06 | Rockwell Semiconductor Systems, Inc. | Methods for forming high-performing dual-damascene interconnect structures |
| US6312874B1 (en) * | 1998-11-06 | 2001-11-06 | Advanced Micro Devices, Inc. | Method for forming a dual damascene trench and underlying borderless via in low dielectric constant materials |
| US6140023A (en) * | 1998-12-01 | 2000-10-31 | Advanced Micro Devices, Inc. | Method for transferring patterns created by lithography |
| US6475904B2 (en) * | 1998-12-03 | 2002-11-05 | Advanced Micro Devices, Inc. | Interconnect structure with silicon containing alicyclic polymers and low-k dielectric materials and method of making same with single and dual damascene techniques |
| US6218317B1 (en) * | 1999-04-19 | 2001-04-17 | National Semiconductor Corp. | Methylated oxide-type dielectric as a replacement for SiO2 hardmasks used in polymeric low K, dual damascene interconnect integration |
| US6509259B1 (en) | 1999-06-09 | 2003-01-21 | Alliedsignal Inc. | Process of using siloxane dielectric films in the integration of organic dielectric films in electronic devices |
| US6265319B1 (en) | 1999-09-01 | 2001-07-24 | Taiwan Semiconductor Manufacturing Company | Dual damascene method employing spin-on polymer (SOP) etch stop layer |
| US6498399B2 (en) | 1999-09-08 | 2002-12-24 | Alliedsignal Inc. | Low dielectric-constant dielectric for etchstop in dual damascene backend of integrated circuits |
| JP2001077196A (ja) | 1999-09-08 | 2001-03-23 | Sony Corp | 半導体装置の製造方法 |
| US6309962B1 (en) * | 1999-09-15 | 2001-10-30 | Taiwan Semiconductor Manufacturing Company | Film stack and etching sequence for dual damascene |
| JP2001176965A (ja) * | 1999-12-20 | 2001-06-29 | Nec Corp | 半導体装置及びその製造方法 |
| US6559070B1 (en) * | 2000-04-11 | 2003-05-06 | Applied Materials, Inc. | Mesoporous silica films with mobile ion gettering and accelerated processing |
| US6720249B1 (en) * | 2000-04-17 | 2004-04-13 | International Business Machines Corporation | Protective hardmask for producing interconnect structures |
| JP2002026122A (ja) * | 2000-07-04 | 2002-01-25 | Sony Corp | 半導体装置の製造方法 |
| US7115531B2 (en) * | 2000-08-21 | 2006-10-03 | Dow Global Technologies Inc. | Organosilicate resins as hardmasks for organic polymer dielectrics in fabrication of microelectronic devices |
| US6383912B1 (en) * | 2000-10-23 | 2002-05-07 | Honeywell International, Inc. | Fabrication method of integrated circuits with multiple low dielectric-constant intermetal dielectrics |
| US6451712B1 (en) * | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
| WO2002083327A1 (en) | 2001-04-16 | 2002-10-24 | Honeywell International Inc. | Layered stacks and methods of production thereof |
| US20030119305A1 (en) * | 2001-12-21 | 2003-06-26 | Huang Robert Y. S. | Mask layer and dual damascene interconnect structure in a semiconductor device |
| US7764602B2 (en) | 2004-05-07 | 2010-07-27 | France Telecom | Method and system for protecting a communication network, said communication network including a transport network |
-
2003
- 2003-03-28 JP JP2003582809A patent/JP4546094B2/ja not_active Expired - Fee Related
- 2003-03-28 AU AU2003222115A patent/AU2003222115A1/en not_active Abandoned
- 2003-03-28 EP EP03718102A patent/EP1493182B1/en not_active Expired - Lifetime
- 2003-03-28 CN CNB038077574A patent/CN100375265C/zh not_active Expired - Fee Related
- 2003-03-28 KR KR1020047015692A patent/KR101051276B1/ko not_active Expired - Fee Related
- 2003-03-28 WO PCT/US2003/009700 patent/WO2003085724A1/en not_active Ceased
- 2003-03-28 US US10/402,073 patent/US6815333B2/en not_active Expired - Lifetime
- 2003-04-01 TW TW092107415A patent/TWI335047B/zh not_active IP Right Cessation
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2005522053A5 (https=) | ||
| US9373580B2 (en) | Dual hard mask lithography process | |
| KR102436100B1 (ko) | 분해능이하 기판 패터닝을 위한 에칭 마스크를 형성하는 방법 | |
| US9911646B2 (en) | Self-aligned double spacer patterning process | |
| CN107112212B (zh) | 使用接枝聚合物材料图案化基底 | |
| CN110828304B (zh) | 形成半导体器件的方法及图案化半导体器件的方法 | |
| KR101208847B1 (ko) | 리소그래피와 스페이서들을 이용한 패턴 형성 방법 | |
| TWI338932B (en) | Method for producing a self-aligned nanocolumnar airbridge and structure produced thereby | |
| EP2279517B1 (en) | Methods of forming structures supported by semiconductor substrates | |
| WO2017087066A1 (en) | Methods of forming etch masks for sub-resolution substrate patterning | |
| US9406526B2 (en) | Method for patterning contact openings on a substrate | |
| TW200935497A (en) | Method for forming high density patterns | |
| KR100876808B1 (ko) | 반도체 소자의 패턴 형성 방법 | |
| TW202347024A (zh) | 經由染料擴散的選擇性去保護 | |
| JP2007017976A (ja) | 多層リソグラフィプロセスにおいて用いられる複素環芳香族構造物を含む基層組成物、リソグラフィ構造物、材料層または材料要素を基板上に形成させる方法 | |
| JP2024519492A (ja) | ウェット-ドライ二層レジスト | |
| US6630404B1 (en) | Reducing feature dimension using self-assembled monolayer | |
| JP2003504221A5 (https=) | ||
| US20080020327A1 (en) | Method of formation of a damascene structure | |
| JP4095588B2 (ja) | 集積回路にフォトリソグラフィ解像力を超える最小ピッチを画定する方法 | |
| CN117461111A (zh) | 干湿双层抗蚀剂 | |
| US20250391659A1 (en) | Method for patterning mask layer over substrate | |
| CN112768351B (zh) | 一种图形形成方法 | |
| KR0124638B1 (ko) | 반도체장치의 다층배선 형성방법 | |
| KR100578222B1 (ko) | 반도체소자에서의 개선된 듀얼 대머신 공정 |