JP2005347747A - 成長基板の除去により製造される共振キャビティiii族窒化物発光装置 - Google Patents
成長基板の除去により製造される共振キャビティiii族窒化物発光装置 Download PDFInfo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0093—Wafer bonding; Removal of the growth substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
【解決手段】 半導体発光装置は、n型領域と、p型領域と、該n型領域およびp型領域の間に配置された発光領域とを含んでいる。n型領域、p型領域および発光領域は、頂面および底面を有するキャビティを形成する。該キャビティの頂面および底面は、粗い表面を有してよい。例えば、該表面は複数の谷によって分離された複数のピークを有している。幾つかの実施形態においは、当該装置にエッチング停止層を組込み、次いで該エッチング停止層上で停止するプロセスによって、当該装置の層を薄膜化することにより、前記キャビティの厚さは一定に維持される。
【選択図】 図18
Description
2GaN+6OH-+6e+=2Ga(OH)3+N2
エッチングプロセスを促進および制御するために、電極51および52の間に外部電位を印加してもよい。
8…光
10…N-コンタクト
11…DBR
12…pコンタクト
14,14A,14B…結合層
16…ホスト基板
18…オーミックコンタクト
20…エピタキシャル層20
40…基板
41…犠牲層
42…エッチング停止層
45…III族窒化物層
48…エピタキシャル構造
49…ホスト基板構造、
51,52…電極
72…エッチングビア
108…n型領域
112…活性領域
116…p型領域
Claims (36)
- III族窒化物発光装置であって:
n型領域と;
p型領域と;
前記n型領域およびp型領域の間に配置された発光領域と
を具備してなり、
前記n型領域、p型領域および発光領域がキャビティを形成し、該キャビティは頂面および底面を有し、該頂面および該底面の各々が、複数の谷によって分離された複数のピークを含んでなる装置。 - 請求項1に記載の装置であって、谷の底とピークの頂部との間の距離が15 nm〜100 nmである装置。
- 請求項1に記載の装置であって、最も近隣にある二つの谷の間の距離が100ミクロン未満である装置。
- 請求項1に記載の装置であって、前記キャビティの如何なる点においても、該キャビティの厚さはλ/8未満で変化し、ここでのλは、前記キャビティ内において、前記発光領域によって放出される光の波長である装置。
- 請求項1に記載の装置であって:更に、
前記n型領域に近接して配置された第一のミラーと;
前記p型領域に近接して配置された第二のミラーと;
を具備してなる装置。 - 請求項5に記載の装置であって、前記第一のミラーは、誘電性の分布されたブラッグ反射体を含んでなる装置。
- 請求項5に記載の装置であって、前記第二のミラーは反射性金属層を含んでなる装置。
- 請求項7に記載の装置であって、前記ミラーは銀を含んでなる装置。
- 請求項5に記載の装置であって、前記第二のミラーは、誘電性の分布されたブラッグ反射体を含んでなる装置。
- 請求項5に記載の装置であって、前記第一のミラーは複数の領域に分割され、これら領域は第一のコンタクトによって相互に分離される装置。
- 請求項10に記載の装置であって、
前記第二のミラーは複数の領域に分割され、これら領域は第二のコンタクトによって相互に分離され、
また前記複数の第一のミラー領域が、前記複数の第二のミラー領域と整列される装置。 - 請求項11に記載の装置であって、前記第一のコンタクトと前記第二のコンタクトの間におけるn型領域の一部に、水素がインプラントされる装置。
- 請求項10に記載の装置であって、前記複数の領域の各領域が、約50ミクロン〜約150ミクロンの長さを有する装置。
- 請求項10に記載の装置であって、前記領域を分離する第一のコンタクトの幅が、約1ミクロン〜約10ミクロンである装置。
- 請求項5に記載の装置であって、前記第一のミラーの少なくとも一部が、前記第二のミラーの少なくとも一部の上に重なっている装置。
- 請求項5に記載の装置であって、更に、前記n型領域と前記第一のミラーとの間に配置された導電性材料の層を具備する装置。
- 請求項16に記載の装置であって、前記導電性材料が酸化インジウム錫を含んでなる装置。
- 請求項1に記載の装置であって、前記頂面と前記底面との間の材料の厚さが3ミクロン未満である装置。
- 請求項1に記載の装置であって、前記頂面と前記底面との間の材料の厚さが1ミクロン未満である装置。
- 請求項1に記載の装置であって、前記頂面と前記底面との間の材料の厚さが0.5ミクロン未満である装置。
- 請求項1に記載の装置であって、更に、前記n型領域に形成された複数のエッチングビアを具備する装置。
- 請求項21に記載の装置であって、前記エッチングビアが、約0.1ミクロン〜約2ミクロンだけ離間されている装置。
- 請求項21に記載の装置であって、前記エッチングビアが、それぞれ約0.1ミクロン〜約2.5ミクロンの深さを有する装置。
- 請求項1に記載の装置であって、前記頂面および前記底面が共振キャビティを形成し、該キャビティ内の電界強度が定在波を形成する装置。
- 請求項24に記載の装置であって、前記発光領域の少なくとも一部が、前記電界強度の最大値近傍に位置する装置。
- 半導体発光装置を形成する方法であって:該方法は、
成長基板上に、下記を含んでなるエピタキシャル構造を成長させることと;
・エッチング停止層;および
・発光層を含むIII族窒化物エピタキシャル層のスタック;
(該スタックは前記エッチング停止層を覆って成長される)
ホスト基板を前記構造に結合させることと;
前記成長基板を除去することと;
前記エッチング停止層上で終了するプロセスによって、前記構造を薄膜化することと;
を含んでなる方法。 - 請求項26に記載の方法であって、前記薄膜化することは光電気化学エッチングにより薄膜化することを含み、前記エッチング停止層はAlGaNを含んでなる方法。
- 請求項26に記載の方法であって、前記薄膜化することは光電気化学エッチングにより薄膜化することを含み、前記エッチング停止層はInGaNを含んでなる方法。
- 請求項26に記載の方法であって、前記薄膜化した後の前記構造の厚さは、1ミクロン未満である方法。
- 請求項26に記載の方法であって、前記薄膜化した後に、何れの点における構造の厚さも平均厚さから5%未満で変動する方法。
- 請求項26に記載の方法であって、前記成長基板を除去することは、前記成長基板とエッチング停止層との間に配置された犠牲層をエッチング除去することを含んでなる方法。
- 請求項31に記載の方法であって、前記エッチングは、光電気化学エッチングによるエッチングを含んでなる方法。
- 請求項26に記載の方法であって、
前記成長基板はSiCの層およびSiの層を含んでなり;
前記スタックは前記SiC上に成長され;
前記成長基板を除去することは、前記Siをエッチング除去することを含んでなる方法。 - 請求項33に記載の方法であって、前記成長基板は、更に、前記SiCの層と前記Siの層の間に配置されたシリコン酸化物の層を含んでなる方法。
- 請求項34に記載の方法であって、前記成長基板を除去することは、前記Siの層および前記シリコン酸化物の層をエッチング除去することを含んでなる方法。
- 請求項26に記載の方法であって、更に、薄膜化した後に前記エッチング停止層を除去することを含んでなる方法。
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US10/861745 | 2004-06-03 | ||
US10/861,745 US6956246B1 (en) | 2004-06-03 | 2004-06-03 | Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal |
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JP5007027B2 JP5007027B2 (ja) | 2012-08-22 |
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US (2) | US6956246B1 (ja) |
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Cited By (9)
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JP2008041937A (ja) * | 2006-08-07 | 2008-02-21 | Yokogawa Electric Corp | 面発光レーザ |
JP2009188249A (ja) * | 2008-02-07 | 2009-08-20 | Nanoteco Corp | 発光ダイオードおよびその製造方法、発光ダイオードアレイ |
JP2010192824A (ja) * | 2009-02-20 | 2010-09-02 | Nichia Corp | 窒化物半導体素子の製造方法 |
JP2010232423A (ja) * | 2009-03-27 | 2010-10-14 | Fujitsu Ltd | 半導体装置の製造方法 |
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Also Published As
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US20060014310A1 (en) | 2006-01-19 |
US6956246B1 (en) | 2005-10-18 |
JP5007027B2 (ja) | 2012-08-22 |
TWI392176B (zh) | 2013-04-01 |
EP1603171B1 (en) | 2016-09-14 |
EP1603171A2 (en) | 2005-12-07 |
TW200616299A (en) | 2006-05-16 |
EP1603171A3 (en) | 2011-04-20 |
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