JP2005347735A - トランジスタおよび同製造方法 - Google Patents

トランジスタおよび同製造方法 Download PDF

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Publication number
JP2005347735A
JP2005347735A JP2005027131A JP2005027131A JP2005347735A JP 2005347735 A JP2005347735 A JP 2005347735A JP 2005027131 A JP2005027131 A JP 2005027131A JP 2005027131 A JP2005027131 A JP 2005027131A JP 2005347735 A JP2005347735 A JP 2005347735A
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JP
Japan
Prior art keywords
layer
emitter
base electrode
base
spacer ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
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JP2005027131A
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English (en)
Japanese (ja)
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JP2005347735A5 (https=
Inventor
Young-Kai Chen
チェン ヤン−カイ
Vincent E Houtsma
エティエンヌ ホウツマ ヴィンセント
Nils G Weimann
ギュエンター ウエイマン ニルス
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
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Lucent Technologies Inc
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Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of JP2005347735A publication Critical patent/JP2005347735A/ja
Publication of JP2005347735A5 publication Critical patent/JP2005347735A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/82—Heterojunctions
    • H10D62/824—Heterojunctions comprising only Group III-V materials heterojunctions, e.g. GaN/AlGaN heterojunctions

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  • Bipolar Transistors (AREA)
JP2005027131A 2004-06-03 2005-02-03 トランジスタおよび同製造方法 Pending JP2005347735A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/859,894 US7190047B2 (en) 2004-06-03 2004-06-03 Transistors and methods for making the same

Publications (2)

Publication Number Publication Date
JP2005347735A true JP2005347735A (ja) 2005-12-15
JP2005347735A5 JP2005347735A5 (https=) 2008-03-21

Family

ID=35446722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005027131A Pending JP2005347735A (ja) 2004-06-03 2005-02-03 トランジスタおよび同製造方法

Country Status (2)

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US (1) US7190047B2 (https=)
JP (1) JP2005347735A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070013012A1 (en) * 2005-07-13 2007-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Etch-stop layer structure
US7579252B2 (en) * 2005-09-30 2009-08-25 Microsemi Corporation Self aligned process for BJT fabrication
US7892910B2 (en) * 2007-02-28 2011-02-22 International Business Machines Corporation Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
CN102478384A (zh) * 2010-11-29 2012-05-30 长春理工大学 基准转换式汽车制动主缸补偿孔测量仪
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9461153B2 (en) * 2011-11-16 2016-10-04 Skyworks Solutions, Inc. Devices and methods related to a barrier for metallization of a gallium based semiconductor
JP2018101652A (ja) 2016-12-19 2018-06-28 株式会社村田製作所 バイポーラトランジスタ及びその製造方法

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175225A (ja) * 1991-12-20 1993-07-13 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタの製造方法
JPH0964054A (ja) * 1995-08-21 1997-03-07 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタの作製方法
JPH10242161A (ja) * 1997-02-27 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合型バイポーラトランジスタ
JPH10261648A (ja) * 1997-03-19 1998-09-29 Hitachi Ltd 半導体装置及びその製造方法並びに半導体装置を用いた通信機器
JPH10284505A (ja) * 1997-04-10 1998-10-23 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタの製造方法
JPH11121462A (ja) * 1997-10-08 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
JP2000114270A (ja) * 1998-10-02 2000-04-21 Furukawa Electric Co Ltd:The 化合物半導体ヘテロ接合バイポーラトランジスタ
JP2000311902A (ja) * 1999-04-27 2000-11-07 Sharp Corp 化合物半導体装置及びその製造方法
JP2004071701A (ja) * 2002-08-02 2004-03-04 Nec Corp 半導体素子およびその製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0240307B1 (en) * 1986-04-01 1993-12-22 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and method of producing the same
JP3141805B2 (ja) * 1997-01-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
JP2000021895A (ja) * 1998-07-02 2000-01-21 Sharp Corp 半導体装置及びその製造方法
US6486532B1 (en) * 2000-09-30 2002-11-26 Newport Fab, Llc Structure for reduction of base and emitter resistance and related method
US6911716B2 (en) * 2002-09-09 2005-06-28 Lucent Technologies, Inc. Bipolar transistors with vertical structures
US7541624B2 (en) 2003-07-21 2009-06-02 Alcatel-Lucent Usa Inc. Flat profile structures for bipolar transistors

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05175225A (ja) * 1991-12-20 1993-07-13 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタの製造方法
JPH0964054A (ja) * 1995-08-21 1997-03-07 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタの作製方法
JPH10242161A (ja) * 1997-02-27 1998-09-11 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合型バイポーラトランジスタ
JPH10261648A (ja) * 1997-03-19 1998-09-29 Hitachi Ltd 半導体装置及びその製造方法並びに半導体装置を用いた通信機器
JPH10284505A (ja) * 1997-04-10 1998-10-23 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタの製造方法
JPH11121462A (ja) * 1997-10-08 1999-04-30 Fujitsu Ltd 半導体装置及びその製造方法
JP2000114270A (ja) * 1998-10-02 2000-04-21 Furukawa Electric Co Ltd:The 化合物半導体ヘテロ接合バイポーラトランジスタ
JP2000311902A (ja) * 1999-04-27 2000-11-07 Sharp Corp 化合物半導体装置及びその製造方法
JP2004071701A (ja) * 2002-08-02 2004-03-04 Nec Corp 半導体素子およびその製造方法

Also Published As

Publication number Publication date
US20050269594A1 (en) 2005-12-08
US7190047B2 (en) 2007-03-13

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