JP2005347735A5 - - Google Patents

Download PDF

Info

Publication number
JP2005347735A5
JP2005347735A5 JP2005027131A JP2005027131A JP2005347735A5 JP 2005347735 A5 JP2005347735 A5 JP 2005347735A5 JP 2005027131 A JP2005027131 A JP 2005027131A JP 2005027131 A JP2005027131 A JP 2005027131A JP 2005347735 A5 JP2005347735 A5 JP 2005347735A5
Authority
JP
Japan
Prior art keywords
layer
base electrode
compound semiconductor
charge carrier
spacer ring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005027131A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005347735A (ja
Filing date
Publication date
Priority claimed from US10/859,894 external-priority patent/US7190047B2/en
Application filed filed Critical
Publication of JP2005347735A publication Critical patent/JP2005347735A/ja
Publication of JP2005347735A5 publication Critical patent/JP2005347735A5/ja
Pending legal-status Critical Current

Links

JP2005027131A 2004-06-03 2005-02-03 トランジスタおよび同製造方法 Pending JP2005347735A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/859,894 US7190047B2 (en) 2004-06-03 2004-06-03 Transistors and methods for making the same

Publications (2)

Publication Number Publication Date
JP2005347735A JP2005347735A (ja) 2005-12-15
JP2005347735A5 true JP2005347735A5 (https=) 2008-03-21

Family

ID=35446722

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005027131A Pending JP2005347735A (ja) 2004-06-03 2005-02-03 トランジスタおよび同製造方法

Country Status (2)

Country Link
US (1) US7190047B2 (https=)
JP (1) JP2005347735A (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070013012A1 (en) * 2005-07-13 2007-01-18 Taiwan Semiconductor Manufacturing Co., Ltd. Etch-stop layer structure
US7579252B2 (en) * 2005-09-30 2009-08-25 Microsemi Corporation Self aligned process for BJT fabrication
US7892910B2 (en) * 2007-02-28 2011-02-22 International Business Machines Corporation Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration
CN102478384A (zh) * 2010-11-29 2012-05-30 长春理工大学 基准转换式汽车制动主缸补偿孔测量仪
US9847407B2 (en) 2011-11-16 2017-12-19 Skyworks Solutions, Inc. Devices and methods related to a gallium arsenide Schottky diode having low turn-on voltage
US9461153B2 (en) * 2011-11-16 2016-10-04 Skyworks Solutions, Inc. Devices and methods related to a barrier for metallization of a gallium based semiconductor
JP2018101652A (ja) 2016-12-19 2018-06-28 株式会社村田製作所 バイポーラトランジスタ及びその製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0240307B1 (en) * 1986-04-01 1993-12-22 Matsushita Electric Industrial Co., Ltd. Bipolar transistor and method of producing the same
JPH05175225A (ja) * 1991-12-20 1993-07-13 Nippon Telegr & Teleph Corp <Ntt> ヘテロ接合バイポーラトランジスタの製造方法
JPH0964054A (ja) * 1995-08-21 1997-03-07 Nippon Telegr & Teleph Corp <Ntt> バイポーラトランジスタの作製方法
JP3141805B2 (ja) * 1997-01-20 2001-03-07 日本電気株式会社 半導体装置の製造方法
JP3345293B2 (ja) * 1997-02-27 2002-11-18 日本電信電話株式会社 ヘテロ接合型バイポーラトランジスタ
JPH10261648A (ja) * 1997-03-19 1998-09-29 Hitachi Ltd 半導体装置及びその製造方法並びに半導体装置を用いた通信機器
JPH10284505A (ja) * 1997-04-10 1998-10-23 Furukawa Electric Co Ltd:The ヘテロ接合バイポーラトランジスタの製造方法
JP4092597B2 (ja) * 1997-10-08 2008-05-28 富士通株式会社 半導体装置及びその製造方法
JP2000021895A (ja) * 1998-07-02 2000-01-21 Sharp Corp 半導体装置及びその製造方法
JP2000114270A (ja) * 1998-10-02 2000-04-21 Furukawa Electric Co Ltd:The 化合物半導体ヘテロ接合バイポーラトランジスタ
JP2000311902A (ja) * 1999-04-27 2000-11-07 Sharp Corp 化合物半導体装置及びその製造方法
US6486532B1 (en) * 2000-09-30 2002-11-26 Newport Fab, Llc Structure for reduction of base and emitter resistance and related method
JP2004071701A (ja) * 2002-08-02 2004-03-04 Nec Corp 半導体素子およびその製造方法
US6911716B2 (en) * 2002-09-09 2005-06-28 Lucent Technologies, Inc. Bipolar transistors with vertical structures
US7541624B2 (en) 2003-07-21 2009-06-02 Alcatel-Lucent Usa Inc. Flat profile structures for bipolar transistors

Similar Documents

Publication Publication Date Title
JP2008504679A5 (https=)
JP2005235858A5 (https=)
JP2010056579A5 (https=)
JP2002305304A5 (https=)
JP2011040445A5 (https=)
JP2007523481A5 (https=)
JP2007531281A5 (https=)
JP2010521061A5 (https=)
JP2007515775A5 (https=)
JP2011086941A5 (https=)
JP2008511172A5 (https=)
JP2007500952A5 (https=)
JP2008270758A5 (https=)
JP2009520367A5 (https=)
JP2009224386A5 (https=)
JP2006173432A5 (https=)
JP2010219515A5 (https=)
TW200639919A (en) Method of fabricating a transistor having a triple channel in a memory device
JP2008508718A5 (https=)
EP1632954A3 (en) Semiconductor probe with resistive tip and method of fabricating the same
JP2005347735A5 (https=)
JP2005109389A5 (https=)
JP2010040711A5 (https=)
JP2010239128A5 (ja) 半導体装置及びその作製方法
JP2009224509A5 (https=)