JP2005336452A - レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法 - Google Patents

レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法 Download PDF

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Publication number
JP2005336452A
JP2005336452A JP2004263753A JP2004263753A JP2005336452A JP 2005336452 A JP2005336452 A JP 2005336452A JP 2004263753 A JP2004263753 A JP 2004263753A JP 2004263753 A JP2004263753 A JP 2004263753A JP 2005336452 A JP2005336452 A JP 2005336452A
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JP
Japan
Prior art keywords
resin
structural unit
group
resist
resist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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JP2004263753A
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English (en)
Japanese (ja)
Inventor
Atsushi Iwashita
淳 岩下
Toshikazu Tachikawa
俊和 立川
Naotaka Kubota
尚孝 久保田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Ohka Kogyo Co Ltd
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Tokyo Ohka Kogyo Co Ltd
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Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Priority to JP2004263753A priority Critical patent/JP2005336452A/ja
Priority to PCT/JP2005/007391 priority patent/WO2005105873A1/ja
Priority to TW094112308A priority patent/TW200609249A/zh
Publication of JP2005336452A publication Critical patent/JP2005336452A/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2004263753A 2004-04-27 2004-09-10 レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法 Withdrawn JP2005336452A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2004263753A JP2005336452A (ja) 2004-04-27 2004-09-10 レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法
PCT/JP2005/007391 WO2005105873A1 (ja) 2004-04-27 2005-04-18 レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法
TW094112308A TW200609249A (en) 2004-04-27 2005-04-18 Resin for a resist composition, negative resist composition, and method of forming resist pattern

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004131115 2004-04-27
JP2004263753A JP2005336452A (ja) 2004-04-27 2004-09-10 レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法

Publications (1)

Publication Number Publication Date
JP2005336452A true JP2005336452A (ja) 2005-12-08

Family

ID=35241639

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004263753A Withdrawn JP2005336452A (ja) 2004-04-27 2004-09-10 レジスト組成物用樹脂、ネガ型レジスト組成物及びレジストパターン形成方法

Country Status (3)

Country Link
JP (1) JP2005336452A (zh)
TW (1) TW200609249A (zh)
WO (1) WO2005105873A1 (zh)

Cited By (60)

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JP2007178848A (ja) * 2005-12-28 2007-07-12 Fujifilm Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
JP2009074085A (ja) * 2007-08-30 2009-04-09 Central Glass Co Ltd ポジ型レジスト組成物
WO2011158817A1 (ja) 2010-06-15 2011-12-22 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、高分子化合物、化合物
US8129100B2 (en) 2008-04-04 2012-03-06 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8192915B2 (en) 2008-08-22 2012-06-05 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition, method of forming resist pattern, and polymeric compound
US8227170B2 (en) 2009-01-14 2012-07-24 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, polymeric compound, and compound
US8247160B2 (en) 2008-07-18 2012-08-21 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, and novel compound and acid generator
US8247166B2 (en) 2008-09-05 2012-08-21 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8252509B2 (en) 2009-09-03 2012-08-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8283105B2 (en) 2009-03-11 2012-10-09 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
US8338076B2 (en) 2008-11-28 2012-12-25 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
US8354218B2 (en) 2009-07-02 2013-01-15 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8367297B2 (en) 2008-12-10 2013-02-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound and acid generator
US8404427B2 (en) 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
US8415082B2 (en) 2009-04-27 2013-04-09 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound and method of producing the same, acid generator
US8497395B2 (en) 2010-12-08 2013-07-30 Tokyo Ohka Kogyo Co., Ltd. Compound
US8609320B2 (en) 2010-11-30 2013-12-17 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, polymeric compound and compound
US8614049B2 (en) 2010-12-08 2013-12-24 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8685620B2 (en) 2011-11-09 2014-04-01 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
US8703387B2 (en) 2011-05-25 2014-04-22 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
US8735052B2 (en) 2010-03-19 2014-05-27 Tokyo Ohka Kogyo Co., Ltd. Surface modifying material, method of forming resist pattern, and method of forming pattern
US8765352B2 (en) 2010-09-02 2014-07-01 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
US8778595B2 (en) 2011-11-25 2014-07-15 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, and polymeric compound
US8785106B2 (en) 2012-02-23 2014-07-22 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8846291B2 (en) 2010-12-08 2014-09-30 Tokyo Ohka Kogyo Co. Ltd. Resist composition, method of forming resist pattern, and new compound
US8877432B2 (en) 2010-03-30 2014-11-04 Tokyo Ohka Kogyo Co., Ltd. Method of forming resist pattern and resist composition
US8883396B2 (en) 2011-11-02 2014-11-11 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8900795B2 (en) 2012-01-11 2014-12-02 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and novel compound
US8932795B2 (en) 2010-05-19 2015-01-13 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound, and acid generator
US8956801B2 (en) 2012-02-17 2015-02-17 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9005872B2 (en) 2011-02-18 2015-04-14 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
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US9017919B2 (en) 2010-10-29 2015-04-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, novel compound and acid generator
US9023580B2 (en) 2011-11-24 2015-05-05 Tokyo Ohka Kogyo Co., Ltd. Method of forming polymeric compound, resist composition and method of forming resist pattern
US9052592B2 (en) 2013-03-25 2015-06-09 Tokyo Ohka Kogyo Co., Ltd. Resist composition and resist pattern forming method
US9057948B2 (en) 2011-10-17 2015-06-16 Tokyo Ohka Kogyo Co., Ltd. Resist composition for EUV or EB, and method of forming resist pattern
US9063416B2 (en) 2011-12-14 2015-06-23 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and compound
US9075304B2 (en) 2012-07-10 2015-07-07 Tokyo Ohka Kogyo Co., Ltd. Method of producing ammonium salt compound, method of producing compound, and compound, polymeric compound, acid generator, resist composition and method of forming resist pattern
US9097969B2 (en) 2012-06-13 2015-08-04 Tokyo Ohka Kogyo Co., Ltd. Compound, resist composition and method of forming resist pattern
US9097971B2 (en) 2011-06-17 2015-08-04 Tokyo Ohka Kogyo Co., Ltd. Compound, radical polymerization initiator, method for producing compound, polymer, resist composition, and method for forming resist pattern
US9104101B2 (en) 2011-02-23 2015-08-11 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
US9164381B2 (en) 2012-05-30 2015-10-20 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, and compound
US9164379B2 (en) 2012-05-08 2015-10-20 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method for forming resist pattern, and compound
US9164380B2 (en) 2011-12-14 2015-10-20 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9170487B2 (en) 2012-03-28 2015-10-27 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, and polymeric compound
US9188863B2 (en) 2012-06-20 2015-11-17 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9235123B2 (en) 2013-03-25 2016-01-12 Tokyo Ohka Kogyo Co., Ltd. Resist composition and resist pattern forming method
US9274424B2 (en) 2013-03-25 2016-03-01 Tokyo Ohka Kogyo Co., Ltd. Resist composition and resist pattern forming method
US9341947B2 (en) 2014-08-26 2016-05-17 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9354515B2 (en) 2013-07-31 2016-05-31 Tokyo Ohka Kogyo Co., Ltd. Resist composition, acid generator, polymeric compound and method of forming resist pattern
US9494860B2 (en) 2010-12-28 2016-11-15 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern
US9606433B2 (en) 2012-05-16 2017-03-28 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, polymeric compound and compound
US9618843B2 (en) 2011-03-25 2017-04-11 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9618842B2 (en) 2009-11-11 2017-04-11 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US9778567B2 (en) 2013-11-15 2017-10-03 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, polymeric compound, compound
US9890233B2 (en) 2014-01-16 2018-02-13 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, and polymeric compound
US10437147B2 (en) 2016-03-31 2019-10-08 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method for forming resist pattern
WO2020235608A1 (ja) 2019-05-22 2020-11-26 東京応化工業株式会社 レジスト組成物精製品の製造方法、レジストパターン形成方法、及びレジスト組成物精製品
US11693313B2 (en) 2019-11-14 2023-07-04 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern

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US7655378B2 (en) * 2006-07-24 2010-02-02 Shin-Etsu Chemical Co., Ltd. Negative resist composition and patterning process using the same
KR101457076B1 (ko) * 2006-10-12 2014-10-31 닛산 가가쿠 고교 가부시키 가이샤 광가교 경화에 의한 레지스트 하층막을 이용하는 반도체 장치의 제조방법

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CA1307695C (en) * 1986-01-13 1992-09-22 Wayne Edmund Feely Photosensitive compounds and thermally stable and aqueous developablenegative images
JP3727044B2 (ja) * 1998-11-10 2005-12-14 東京応化工業株式会社 ネガ型レジスト組成物
JP3900135B2 (ja) * 2002-10-29 2007-04-04 Ｊｓｒ株式会社 感放射線性樹脂組成物
JP2005070316A (ja) * 2003-08-22 2005-03-17 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法
JP2005084239A (ja) * 2003-09-05 2005-03-31 Fuji Photo Film Co Ltd ポジ型レジスト組成物及びそれを用いたパターン形成方法

Cited By (63)

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JP2007178848A (ja) * 2005-12-28 2007-07-12 Fujifilm Corp 感光性組成物、該感光性組成物を用いたパターン形成方法及び該感光性組成物に用いられる化合物
US8404427B2 (en) 2005-12-28 2013-03-26 Fujifilm Corporation Photosensitive composition, and pattern-forming method and resist film using the photosensitive composition
JP2009074085A (ja) * 2007-08-30 2009-04-09 Central Glass Co Ltd ポジ型レジスト組成物
US8129100B2 (en) 2008-04-04 2012-03-06 Shin-Etsu Chemical Co., Ltd. Double patterning process
US8247160B2 (en) 2008-07-18 2012-08-21 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, and novel compound and acid generator
US8192915B2 (en) 2008-08-22 2012-06-05 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition, method of forming resist pattern, and polymeric compound
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Also Published As

Publication number Publication date
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WO2005105873A1 (ja) 2005-11-10

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