JP2005332951A - 発光装置 - Google Patents
発光装置 Download PDFInfo
- Publication number
- JP2005332951A JP2005332951A JP2004149488A JP2004149488A JP2005332951A JP 2005332951 A JP2005332951 A JP 2005332951A JP 2004149488 A JP2004149488 A JP 2004149488A JP 2004149488 A JP2004149488 A JP 2004149488A JP 2005332951 A JP2005332951 A JP 2005332951A
- Authority
- JP
- Japan
- Prior art keywords
- light
- scattering particles
- emitting device
- led lamp
- light scattering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000000149 argon plasma sintering Methods 0.000 claims abstract description 63
- 239000002245 particle Substances 0.000 claims abstract description 52
- 229920005989 resin Polymers 0.000 claims description 18
- 239000011347 resin Substances 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 17
- 238000007789 sealing Methods 0.000 claims description 15
- 230000005284 excitation Effects 0.000 claims description 7
- 239000010409 thin film Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 abstract description 23
- 229920000647 polyepoxide Polymers 0.000 abstract description 23
- 239000000463 material Substances 0.000 abstract description 16
- 238000010521 absorption reaction Methods 0.000 abstract description 9
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 13
- 230000000694 effects Effects 0.000 description 10
- 229920002050 silicone resin Polymers 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000758 substrate Substances 0.000 description 5
- 229910000881 Cu alloy Inorganic materials 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 230000031700 light absorption Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 239000003566 sealing material Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011882 ultra-fine particle Substances 0.000 description 2
- 108091006149 Electron carriers Proteins 0.000 description 1
- 241001085205 Prenanthella exigua Species 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007373 indentation Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
Landscapes
- Led Device Packages (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004149488A JP2005332951A (ja) | 2004-05-19 | 2004-05-19 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004149488A JP2005332951A (ja) | 2004-05-19 | 2004-05-19 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005332951A true JP2005332951A (ja) | 2005-12-02 |
JP2005332951A5 JP2005332951A5 (enrdf_load_stackoverflow) | 2006-11-02 |
Family
ID=35487394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004149488A Withdrawn JP2005332951A (ja) | 2004-05-19 | 2004-05-19 | 発光装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2005332951A (enrdf_load_stackoverflow) |
Cited By (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227932A (ja) * | 2006-02-22 | 2007-09-06 | Samsung Electro Mech Co Ltd | 発光ダイオードパッケージ |
JP2007227679A (ja) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | 発光装置 |
JP2007287962A (ja) * | 2006-04-18 | 2007-11-01 | Nichia Chem Ind Ltd | 半導体発光装置 |
WO2008087918A1 (ja) * | 2007-01-15 | 2008-07-24 | Sanyo Electric Co., Ltd. | 半導体発光装置 |
JP2008198997A (ja) * | 2007-01-15 | 2008-08-28 | Sanyo Electric Co Ltd | 半導体発光装置 |
JP2008277828A (ja) * | 2007-05-07 | 2008-11-13 | Neovison Pnv Co Ltd | 電光板に設置される発光ダイオード |
JP2012089652A (ja) * | 2010-10-19 | 2012-05-10 | Panasonic Corp | 半導体発光デバイス |
CN102544319A (zh) * | 2012-01-05 | 2012-07-04 | 深圳雷曼光电科技股份有限公司 | Led支架、led及led封装工艺 |
JP2013254972A (ja) * | 2006-08-03 | 2013-12-19 | Intematix Corp | 光放出蛍光体を包含するled照明装置 |
CN103515512A (zh) * | 2012-06-29 | 2014-01-15 | 四川柏狮光电技术有限公司 | Led二次封装工艺以及通过该工艺制造的led像素管 |
JP2014239073A (ja) * | 2006-03-21 | 2014-12-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2015019099A (ja) * | 2007-09-27 | 2015-01-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 可変の放射特性を有する光源 |
WO2016035311A1 (ja) * | 2014-09-01 | 2016-03-10 | パナソニックIpマネジメント株式会社 | 波長変換フィルタおよびそれを利用した太陽電池モジュール |
US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
-
2004
- 2004-05-19 JP JP2004149488A patent/JP2005332951A/ja not_active Withdrawn
Cited By (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007227932A (ja) * | 2006-02-22 | 2007-09-06 | Samsung Electro Mech Co Ltd | 発光ダイオードパッケージ |
JP2007227679A (ja) * | 2006-02-23 | 2007-09-06 | Matsushita Electric Works Ltd | 発光装置 |
JP2014239073A (ja) * | 2006-03-21 | 2014-12-18 | 株式会社半導体エネルギー研究所 | 液晶表示装置 |
JP2007287962A (ja) * | 2006-04-18 | 2007-11-01 | Nichia Chem Ind Ltd | 半導体発光装置 |
US9595644B2 (en) | 2006-08-03 | 2017-03-14 | Intematix Corporation | LED lighting arrangement including light emitting phosphor |
JP2013254972A (ja) * | 2006-08-03 | 2013-12-19 | Intematix Corp | 光放出蛍光体を包含するled照明装置 |
US8384101B2 (en) | 2007-01-15 | 2013-02-26 | Sanyo Electric Co., Ltd. | Semiconductor light-emitting device |
JP2008198997A (ja) * | 2007-01-15 | 2008-08-28 | Sanyo Electric Co Ltd | 半導体発光装置 |
WO2008087918A1 (ja) * | 2007-01-15 | 2008-07-24 | Sanyo Electric Co., Ltd. | 半導体発光装置 |
JP2008277828A (ja) * | 2007-05-07 | 2008-11-13 | Neovison Pnv Co Ltd | 電光板に設置される発光ダイオード |
JP2015019099A (ja) * | 2007-09-27 | 2015-01-29 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | 可変の放射特性を有する光源 |
US9546765B2 (en) | 2010-10-05 | 2017-01-17 | Intematix Corporation | Diffuser component having scattering particles |
JP2012089652A (ja) * | 2010-10-19 | 2012-05-10 | Panasonic Corp | 半導体発光デバイス |
CN102544319A (zh) * | 2012-01-05 | 2012-07-04 | 深圳雷曼光电科技股份有限公司 | Led支架、led及led封装工艺 |
CN103515512A (zh) * | 2012-06-29 | 2014-01-15 | 四川柏狮光电技术有限公司 | Led二次封装工艺以及通过该工艺制造的led像素管 |
US10557594B2 (en) | 2012-12-28 | 2020-02-11 | Intematix Corporation | Solid-state lamps utilizing photoluminescence wavelength conversion components |
US9512970B2 (en) | 2013-03-15 | 2016-12-06 | Intematix Corporation | Photoluminescence wavelength conversion components |
WO2016035311A1 (ja) * | 2014-09-01 | 2016-03-10 | パナソニックIpマネジメント株式会社 | 波長変換フィルタおよびそれを利用した太陽電池モジュール |
JPWO2016035311A1 (ja) * | 2014-09-01 | 2017-05-25 | パナソニックIpマネジメント株式会社 | 波長変換フィルタおよびそれを利用した太陽電池モジュール |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060919 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20060926 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20080326 |