JP2005328047A5 - - Google Patents

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Publication number
JP2005328047A5
JP2005328047A5 JP2005134248A JP2005134248A JP2005328047A5 JP 2005328047 A5 JP2005328047 A5 JP 2005328047A5 JP 2005134248 A JP2005134248 A JP 2005134248A JP 2005134248 A JP2005134248 A JP 2005134248A JP 2005328047 A5 JP2005328047 A5 JP 2005328047A5
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JP
Japan
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blank
charged particle
exposure apparatus
particle beam
beam exposure
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JP2005134248A
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English (en)
Japanese (ja)
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JP4843248B2 (ja
JP2005328047A (ja
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Publication of JP2005328047A5 publication Critical patent/JP2005328047A5/ja
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Publication of JP4843248B2 publication Critical patent/JP4843248B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005134248A 2004-04-30 2005-05-02 粒子ビーム露光の改善されたパターン規定装置 Expired - Fee Related JP4843248B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
AT7552004 2004-04-30
ATA755/2004 2004-04-30

Publications (3)

Publication Number Publication Date
JP2005328047A JP2005328047A (ja) 2005-11-24
JP2005328047A5 true JP2005328047A5 (cg-RX-API-DMAC7.html) 2008-05-29
JP4843248B2 JP4843248B2 (ja) 2011-12-21

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JP2005134248A Expired - Fee Related JP4843248B2 (ja) 2004-04-30 2005-05-02 粒子ビーム露光の改善されたパターン規定装置

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US (1) US7368738B2 (cg-RX-API-DMAC7.html)
JP (1) JP4843248B2 (cg-RX-API-DMAC7.html)
GB (1) GB2413694A (cg-RX-API-DMAC7.html)

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JP2015023286A (ja) 2013-07-17 2015-02-02 アイエムエス ナノファブリケーション アーゲー 複数のブランキングアレイを有するパターン画定装置
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JP6230881B2 (ja) 2013-11-12 2017-11-15 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム描画方法
JP6190254B2 (ja) * 2013-12-04 2017-08-30 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置及びマルチ荷電粒子ビーム描画方法
EP2913838B1 (en) 2014-02-28 2018-09-19 IMS Nanofabrication GmbH Compensation of defective beamlets in a charged-particle multi-beam exposure tool
EP2937888B1 (en) * 2014-04-25 2019-02-20 IMS Nanofabrication GmbH Multi-beam tool for cutting patterns
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EP2950325B1 (en) 2014-05-30 2018-11-28 IMS Nanofabrication GmbH Compensation of dose inhomogeneity using overlapping exposure spots
CN106463347B (zh) 2014-06-13 2020-09-15 英特尔公司 即时电子束对准
EP3155647A4 (en) 2014-06-13 2018-01-24 Intel Corporation Ebeam universal cutter
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KR102373197B1 (ko) * 2014-06-13 2022-03-11 인텔 코포레이션 Ｅ 빔 비범용 커터
JP6892214B2 (ja) 2014-07-10 2021-06-23 アイエムエス ナノファブリケーション ゲーエムベーハー 畳み込みカーネルを使用する粒子ビーム描画機のカスタマイズ化
KR102459585B1 (ko) * 2014-08-19 2022-10-27 인텔 코포레이션 Ｅ 빔 범용 커터를 이용한 교차 스캔 근접 보정
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JP6709109B2 (ja) * 2016-05-31 2020-06-10 株式会社ニューフレアテクノロジー マルチ荷電粒子ビームのブランキング装置及びマルチ荷電粒子ビーム照射装置
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US10978270B2 (en) * 2018-12-19 2021-04-13 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, interchangeable multi-aperture arrangement for a charged particle beam device, and method for operating a charged particle beam device
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KR102835338B1 (ko) 2019-05-03 2025-07-17 아이엠에스 나노패브릭케이션 게엠베하 멀티 빔 라이터에서의 노출 슬롯의 지속 시간 조정
US11099482B2 (en) 2019-05-03 2021-08-24 Ims Nanofabrication Gmbh Adapting the duration of exposure slots in multi-beam writers
KR20210099516A (ko) 2020-02-03 2021-08-12 아이엠에스 나노패브릭케이션 게엠베하 멀티―빔 라이터의 블러 변화 보정
KR20210132599A (ko) 2020-04-24 2021-11-04 아이엠에스 나노패브릭케이션 게엠베하 대전 입자 소스
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