JP2005311117A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP2005311117A JP2005311117A JP2004126917A JP2004126917A JP2005311117A JP 2005311117 A JP2005311117 A JP 2005311117A JP 2004126917 A JP2004126917 A JP 2004126917A JP 2004126917 A JP2004126917 A JP 2004126917A JP 2005311117 A JP2005311117 A JP 2005311117A
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- JP
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- Prior art keywords
- semiconductor
- semiconductor chip
- semiconductor device
- hole
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 267
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 239000000758 substrate Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 14
- 230000000149 penetrating effect Effects 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 3
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 230000001747 exhibiting effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 82
- 239000011521 glass Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 11
- 239000011229 interlayer Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 238000004544 sputter deposition Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000001312 dry etching Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 238000001039 wet etching Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004126917A JP2005311117A (ja) | 2004-04-22 | 2004-04-22 | 半導体装置及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004126917A JP2005311117A (ja) | 2004-04-22 | 2004-04-22 | 半導体装置及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005311117A true JP2005311117A (ja) | 2005-11-04 |
| JP2005311117A5 JP2005311117A5 (enExample) | 2007-06-07 |
Family
ID=35439523
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004126917A Withdrawn JP2005311117A (ja) | 2004-04-22 | 2004-04-22 | 半導体装置及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005311117A (enExample) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108690A (ja) * | 2004-10-08 | 2006-04-20 | Easetech Korea Co Ltd | 再配線基板を用いたウェーハレベルチップスケールパッケージの製造方法 |
| JP2010103300A (ja) * | 2008-10-23 | 2010-05-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| WO2010082248A1 (ja) * | 2009-01-14 | 2010-07-22 | パナソニック株式会社 | 半導体装置およびそれを用いた電子機器ならびに半導体装置の製造方法 |
| US8174090B2 (en) | 2008-12-03 | 2012-05-08 | China Wafer Level Csp Ltd. | Packaging structure |
| JP2016001759A (ja) * | 2015-09-16 | 2016-01-07 | 凸版印刷株式会社 | 半導体装置 |
| US9520322B2 (en) | 2012-01-06 | 2016-12-13 | Toppan Printing Co., Ltd. | Semiconductor device and method for manufacturing same |
| WO2019172431A1 (ja) * | 2018-03-09 | 2019-09-12 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、半導体装置、電子機器、および製造方法 |
-
2004
- 2004-04-22 JP JP2004126917A patent/JP2005311117A/ja not_active Withdrawn
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006108690A (ja) * | 2004-10-08 | 2006-04-20 | Easetech Korea Co Ltd | 再配線基板を用いたウェーハレベルチップスケールパッケージの製造方法 |
| JP2010103300A (ja) * | 2008-10-23 | 2010-05-06 | Sanyo Electric Co Ltd | 半導体装置及びその製造方法 |
| US8598720B2 (en) | 2008-10-23 | 2013-12-03 | Sanyo Semiconductor Co., Ltd. | Semiconductor device and manufacturing method thereof |
| US8174090B2 (en) | 2008-12-03 | 2012-05-08 | China Wafer Level Csp Ltd. | Packaging structure |
| WO2010082248A1 (ja) * | 2009-01-14 | 2010-07-22 | パナソニック株式会社 | 半導体装置およびそれを用いた電子機器ならびに半導体装置の製造方法 |
| US9520322B2 (en) | 2012-01-06 | 2016-12-13 | Toppan Printing Co., Ltd. | Semiconductor device and method for manufacturing same |
| JP2016001759A (ja) * | 2015-09-16 | 2016-01-07 | 凸版印刷株式会社 | 半導体装置 |
| WO2019172431A1 (ja) * | 2018-03-09 | 2019-09-12 | ソニーセミコンダクタソリューションズ株式会社 | 固体撮像素子、半導体装置、電子機器、および製造方法 |
| US11482557B2 (en) | 2018-03-09 | 2022-10-25 | Sony Semiconductor Solutions Corporation | Solid-state image-capturing device, semiconductor apparatus, electronic apparatus, and manufacturing method |
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Legal Events
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| A521 | Written amendment |
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