JP2005303053A5 - - Google Patents

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Publication number
JP2005303053A5
JP2005303053A5 JP2004117894A JP2004117894A JP2005303053A5 JP 2005303053 A5 JP2005303053 A5 JP 2005303053A5 JP 2004117894 A JP2004117894 A JP 2004117894A JP 2004117894 A JP2004117894 A JP 2004117894A JP 2005303053 A5 JP2005303053 A5 JP 2005303053A5
Authority
JP
Japan
Prior art keywords
plasma processing
processing apparatus
ring
coil
insulating component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004117894A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005303053A (ja
JP4657620B2 (ja
Filing date
Publication date
Priority claimed from JP2004117894A external-priority patent/JP4657620B2/ja
Priority to JP2004117894A priority Critical patent/JP4657620B2/ja
Application filed filed Critical
Priority to US10/921,341 priority patent/US20050224182A1/en
Publication of JP2005303053A publication Critical patent/JP2005303053A/ja
Publication of JP2005303053A5 publication Critical patent/JP2005303053A5/ja
Priority to US12/567,137 priority patent/US7744721B2/en
Priority to US12/783,686 priority patent/US8231759B2/en
Publication of JP4657620B2 publication Critical patent/JP4657620B2/ja
Application granted granted Critical
Priority to US13/545,422 priority patent/US20120273136A1/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004117894A 2004-04-13 2004-04-13 プラズマ処理装置 Expired - Fee Related JP4657620B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置
US10/921,341 US20050224182A1 (en) 2004-04-13 2004-08-19 Plasma processing apparatus
US12/567,137 US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus
US12/783,686 US8231759B2 (en) 2004-04-13 2010-05-20 Plasma processing apparatus
US13/545,422 US20120273136A1 (en) 2004-04-13 2012-07-10 Plasma Processing Apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010238188A Division JP2011040786A (ja) 2010-10-25 2010-10-25 プラズマ処理装置

Publications (3)

Publication Number Publication Date
JP2005303053A JP2005303053A (ja) 2005-10-27
JP2005303053A5 true JP2005303053A5 (https=) 2007-04-12
JP4657620B2 JP4657620B2 (ja) 2011-03-23

Family

ID=35059360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004117894A Expired - Fee Related JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Country Status (2)

Country Link
US (4) US20050224182A1 (https=)
JP (1) JP4657620B2 (https=)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
CN101136279B (zh) * 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
JP5277473B2 (ja) * 2006-11-28 2013-08-28 サムコ株式会社 プラズマ処理装置
JP4932857B2 (ja) * 2007-02-16 2012-05-16 ラム リサーチ コーポレーション 誘導コイル、プラズマ発生装置およびプラズマ発生方法
PL2119314T3 (pl) * 2007-03-05 2015-12-31 Sandvik Intellectual Property Element grzejny i wkład dla pieców elektrycznych
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
WO2010082327A1 (ja) 2009-01-15 2010-07-22 株式会社 日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
JP5155235B2 (ja) * 2009-01-15 2013-03-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
JP5905447B2 (ja) * 2010-04-20 2016-04-20 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ プラズマ処理システムにおける誘導コイルアセンブリ
KR20120004040A (ko) * 2010-07-06 2012-01-12 삼성전자주식회사 플라즈마 발생장치
JP5851682B2 (ja) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 プラズマ処理装置
JP2013182966A (ja) 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
JP5800937B2 (ja) * 2014-03-14 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置
WO2016201612A1 (en) * 2015-06-15 2016-12-22 Applied Materials, Inc. Source rf power split inner coil to improve bcd and etch depth performance
CN109887872B (zh) * 2019-03-29 2024-11-15 华南理工大学 用于制备凹槽栅增强型器件的精准刻蚀装置及其刻蚀方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379828B1 (en) 1989-01-25 1995-09-27 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
TW249313B (https=) * 1993-03-06 1995-06-11 Tokyo Electron Co
JP3165941B2 (ja) 1993-10-04 2001-05-14 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
JP3424867B2 (ja) * 1994-12-06 2003-07-07 富士通株式会社 プラズマ処理装置及びプラズマ処理方法
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
EP1307896A2 (en) * 2000-08-11 2003-05-07 Applied Materials, Inc. Externally excited torroidal plasma source
KR100404723B1 (ko) * 2001-04-26 2003-11-07 주식회사 플라즈마트 낮은 종횡비를 갖는 유도결합형 플라즈마 발생장치
JP3787079B2 (ja) * 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置
EP1552727A4 (en) * 2002-07-26 2007-06-06 Plasmart Co Ltd INDUCTIVE-COUPLED PLASMAGENERATOR WITH LOWER SIDE TRIM
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

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