US20050224182A1 - Plasma processing apparatus - Google Patents

Plasma processing apparatus Download PDF

Info

Publication number
US20050224182A1
US20050224182A1 US10/921,341 US92134104A US2005224182A1 US 20050224182 A1 US20050224182 A1 US 20050224182A1 US 92134104 A US92134104 A US 92134104A US 2005224182 A1 US2005224182 A1 US 2005224182A1
Authority
US
United States
Prior art keywords
coil
plane
plasma processing
processing apparatus
coil elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
US10/921,341
Other languages
English (en)
Inventor
Manabu Edamura
Go Miya
Ken Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi High Tech Corp
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Assigned to HITACHI HIGH-TECHNOLOGIES CORPORATION reassignment HITACHI HIGH-TECHNOLOGIES CORPORATION ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: EDAMURA, MANABU, MIYA, GO, YOSHIOKA, KEN
Publication of US20050224182A1 publication Critical patent/US20050224182A1/en
Priority to US12/567,137 priority Critical patent/US7744721B2/en
Priority to US12/783,686 priority patent/US8231759B2/en
Priority to US13/545,422 priority patent/US20120273136A1/en
Abandoned legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Definitions

  • the present invention relates to a plasma processing apparatus preferably used for etching objects or depositing films in the process of manufacturing semiconductor devices, liquid crystal display substrates or the like.
  • process conditions of a plasma process that realizes uniform processing to be carried out across the whole wafer surface have become narrower, so there are increasing demands for plasma processing apparatuses having more complete control of the states of the processes.
  • a plasma processing apparatus capable of controlling the plasma distribution, the process gas dissociation and the surface reaction within the reactor with very high accuracy.
  • an RF inductively coupled plasma source is used as plasma source for the above-mentioned type of plasma processing apparatuses.
  • an inductively coupled plasma processing apparatus is provided in which a radio frequency on the order of a few hundred kHz to a few hundred MHz is supplied to an RF coil generally in the shape of a loop, a coil or a helical disposed outside the processing chamber via an insulating member such as a quartz forming a part of the chamber, and the induction field created via the coil accelerates the electrons in the plasma, thereby supplying energy to the process gas introduced to the interior of the processing chamber for generating plasma and maintaining the generated plasma (refer for example to patent document 1).
  • an RF inductively coupled plasma processing apparatus has a coil disposed within the chamber, wherein a helical coil functioning as the RF induction coil is disposed in the chamber at a position confronting a semiconductor wafer which is the object to be processed (refer for example to patent document 2).
  • This type of plasma processing apparatus is called an inductively coupled plasma processing apparatus, since an induced current is generated in the plasma, and the plasma and RF coil are inductively coupled in a circuit-like manner (a transformer circuit in which the coil is regarded as the primary coil and the current in the plasma as the secondary coil).
  • the inductively coupled plasma processing apparatus is advantageous since it can generate high density plasma on the order of 1 ⁇ 10 11 through 1 ⁇ 10 12 (cm ⁇ 3 ) in a low pressure of a few mTorr, generate plasma easily in a large area, and reduce the amount of contaminants entering the surface of the object being subjected to processing, by a simple and inexpensive arrangement using a simple coil and an RF power supply.
  • high density plasma is generated at low pressure, according to which the ions have greater mean free path and are incident on the object being processed with advantageous directional property, so such apparatuses are specifically appropriate for microfabrication using plasma etching technology, and can realize high processing speed.
  • the semiconductor wafer or other objects subjected to plasma processing is substantially circular, so the chamber of the plasma processing apparatus in which the wafer is processed often has a correspondingly circular inner horizontal cross-section.
  • processing gas is introduced either from the center or the side wall of the chamber, and in most cases evacuated from the bottom. It is desirable that the wafer etching is completely uniform across the wafer surface, but in actual, the reaction on the wafer surface is not completely uniform due to the non-uniform distribution of plasma, dissociated species and reaction products within the reaction chamber. For example, the reaction products are generated from the wafer, so the concentration thereof is necessarily higher at the center of the chamber.
  • non-uniformity in the circumferential (azimuthal) direction occurs due to the configuration of the apparatus. That is, a coil always has an end connected to the RF power supply and another end connected to ground, and this coil configuration causes plasma non-uniformity in the circumferential direction. Further, since in the low density areas the electrons are directly accelerated by the voltage applied to the coil, plasma is generated in a capacitively-coupled manner and influences the process.
  • I coil current
  • Z impedance
  • f power supply frequency
  • the reduction of induction causes voltage in the coil to be reduced and current to be increased.
  • the increased voltage causes the plasma to have better ignition property and low-density stability, but on the one hand, causes increase of damage caused by ion sputtering of the insulating member disposed between the induction coil and plasma.
  • design-related problems occur by the increased current, such as heating, the loss caused thereby, and current resistance of the variable capacitor used in the matching network.
  • the increase in voltage causes problems such as abnormal discharge, undesirable effect to plasma, and voltage resistance of the variable capacitor.
  • the coil In order to achieve an inductance of 1 ⁇ H with four parallel coil circuits, the coil must have approximately 1.5 turns per circuit, and the total number of turns must be six. In other words, in order to adopt a parallel coil arrangement, the total number of turns is significantly increased in order to achieve the same inductance as that of the single coil. In order to achieve the inductance of a single coil with a single turn by an arrangement composed of four parallel circuit coils, one coil circuit must have 1.5 turns, resulting in a total of six turns. According to patent document 3, the coil is wound vertically or along a dome structure. According to non-patent document 2, the coil is disposed horizontally on a plane. However, the difficulty of adopting a parallel coil is that the space for disposing the induction coil is limited from the viewpoint of apparatus design.
  • the present invention aims mainly at providing an inductively coupled plasma apparatus that solves the prior art problems mentioned above caused especially by adopting a parallel coil, the apparatus capable of disposing the parallel coil with a large number of coil turns in a relatively narrow space, such as a space for disposing a single-turn coil.
  • the present invention provides a plasma processing apparatus capable of overcoming the problems of circumferential direction non-uniformity of plasma and the difficulty of apparatus design, and capable of generating a stable and uniform plasma with high efficiency under wider process conditions.
  • the present invention provides an inductively coupled plasma processing apparatus capable of solving the conventional problem of circumferential non-uniformity of plasma, capable of generating stable plasma at arbitrary locations with high efficiency under wider process conditions.
  • a plurality of induction coil elements in parallel connection is not simply disposed vertically or horizontally, but disposed to have a three-dimensional structure, to thereby solve the problem of coil space.
  • an annular insulating member (insulating ring) having a quadrangular cross-section for example, is used to dispose four identical coil elements to the four planes of the insulating ring (the lower, inner, upper and outer planes).
  • One coil element circuit extended from a power supply via a matching network is disposed at first on an upper plane of the insulating ring, runs along the outer plane forming a 90° turn, runs along the bottom plane forming a 90° turn, runs along the inner plane forming a 90° turn, and returns to the upper plane where it is connected to ground potential.
  • a total of four coil circuits are disposed in the same manner at even circumferential angular intervals of 90°. At this time, the total number of turns is three.
  • one coil circuit totals in 90° ⁇ 4 360° (one turn), according to which the total number of turns is four.
  • the number of turns per circuit can be increased.
  • the number of turns per circuit can be increased.
  • the present invention enables to dispose a parallel coil having a large number of total turns within a limited space.
  • the present invention provides a plasma processing apparatus comprising a processing chamber for subjecting an object to plasma processing; an inlet means for introducing gases for plasma processing into the processing chamber; an evacuation means for evacuating an interior of the processing chamber; a sample stage for placing the object to be processed; a power supply means for generating plasma in the processing chamber; and at least one induction coil connected to the power supply means, wherein the induction coil is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement, the induction coil being positioned so that its center corresponds to a center of the object, and wherein input ends of the coil elements are arranged at equal angular intervals calculated by dividing 360° by the number of coil elements, the coil elements having a three-dimensional structure in a radial direction and a height direction along a surface of an annular ring with an arbitrary cross-sectional shape.
  • the annular ring is an insulating member, and conductor portions of the coil elements are formed on the surface of the insulating member. Moreover, a refrigerant passage is formed to the insulating member for cooling. Even further, the cross-sectional shape of the insulating member is polygonal, and the conductor portions of the coil elements are formed on the surface of the polygonal surface of the insulating member.
  • the cross-sectional shape of the insulating member is circular, and the conductor portions of the coil elements are formed on the surface of the insulating member in a toroidal coil-like shape.
  • the annular ring is a virtual annular ring, and conductor portions of the coil elements are formed along a surface of the virtual annular ring.
  • the present invention provides a plasma processing apparatus comprising: a processing chamber for subjecting an object to plasma processing; an inlet means for introducing a gas for plasma processing into the processing chamber; an evacuation means for evacuating an interior of the processing chamber; a sample stage for placing the object; a power supply means for generating plasma in the processing chamber; and at least one induction coil connected to the power supply means, wherein the induction coil is formed by connecting a plurality of identical coil elements in a parallel circuit-like arrangement, the coil elements disposed on a surface of an annular ring having an arbitrary cross-sectional shape and formed to rotate along the surface of the annular ring.
  • the annular ring is an insulating member, and conductor portions of the coil elements are formed on the surface of the insulating member. Further according to the present invention, a refrigerant passage is formed to the insulating member for cooling, and further, the cross-sectional shape of the insulating member is polygonal, and the conductor portions of the coil elements are formed on the surface of the polygonal surface of the insulating member.
  • the cross-sectional shape of the insulating member is circular, and the conductor portions of the coil elements are formed on the surface of the insulating member in a toroidal coil-like shape.
  • the annular ring is a virtual annular ring, and conductor portions of the coil elements are formed along a surface of the virtual annular ring.
  • the coil elements are rotated for a predetermined angle at a time in a circumferential direction of the annular ring, by which the coil elements are rotated at a time from one face of the annular ring to a face adjacent thereto.
  • the coil elements are rotated continuously.
  • the induction coil is formed so that input ends or output ends of the plural coil elements are disposed at predetermined even angular intervals in the circumferential direction of the annular ring.
  • the annular ring is arranged so that a center thereof corresponds to the center of the object. Moreover, according to the present invention, plural induction coils are arranged concentrically.
  • the present plasma processing apparatus complete plasma uniformity across the circumferential direction can be achieved. Therefore, the plasma etch result is uniform in the circumferential direction, and since it is necessary only to consider the uniformity in the radial direction when determining plasma etching process conditions, the determination process is facilitated and prompt. As a result, the plasma processing performance and the controllability of the apparatus as a whole is enhanced, and it becomes possible to provide finer etching process with high throughput, and higher quality film deposition and surface treatment.
  • FIG. 1 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a first embodiment of the present invention
  • FIG. 2 is an explanatory view showing a shape of a coil element of an induction coil used in a plasma etching apparatus
  • FIG. 3 is an explanatory view showing a modified example of an induction coil
  • FIG. 4 is an explanatory view showing the connection of an induction coil according to the present invention.
  • FIG. 5 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a second embodiment of the present invention
  • FIG. 6 is a perspective view showing the arrangement of coil elements of an induction coil corresponding to a third embodiment of the present invention.
  • FIG. 7 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a fourth embodiment of the present invention.
  • FIG. 8 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a fifth embodiment of the present invention.
  • FIG. 9 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a sixth embodiment of the present invention.
  • FIG. 10 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a seventh embodiment of the present invention.
  • FIG. 11 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to an eighth embodiment of the present invention.
  • FIG. 12 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a ninth embodiment of the present invention.
  • FIG. 13 is an explanatory view showing how the coil element of the induction coil is disposed according to the ninth embodiment of the present invention.
  • FIG. 14 is an explanatory view showing the arrangement of coil elements of an induction coil corresponding to a tenth embodiment of the present invention.
  • the plasma processing apparatus according to the present invention is not only applied to the field of manufacturing semiconductor devices, but can also be applied to various fields concerning plasma processing, such as the manufacturing of liquid crystal displays, forming of films using various materials and providing surface treatments.
  • a plasma etching apparatus for manufacturing semiconductor devices is described as an example to illustrate the preferred embodiments.
  • An RF inductively coupled plasma processing apparatus comprises a processing chamber 1 maintained in vacuum, an evacuation means 2 connected to a vacuum pump for example for maintaining the interior of the processing chamber in vacuum, a wafer-transfer system 4 for carrying a semiconductor wafer 3 or object to be processed into and out of the vacuum processing chamber, an inlet 5 for introducing processing gas, an electrode 6 on which the semiconductor wafer 3 is placed (sample stage for mounting the object to be processed), a matching network 7 , an RF power supply 8 , an insulator 9 functioning as the ceiling of the processing chamber and through which the electric field created by radio frequency is introduced to the processing chamber, an RF induction coil 10 having an arrangement unique to the present invention, an annular insulating body (insulating member ) 11 , a matching network 12 and an RF power supply 13 .
  • the processing chamber 1 is a vacuum vessel made of stainless steel or aluminum with an anodized aluminum surface, which is grounded electrically.
  • the processing chamber 1 is equipped with an evacuation means 2 , and a wafer-transfer system 4 for carrying the semiconductor wafer 3 which is the object to be processed into and out of the chamber.
  • Inside the processing chamber 1 is disposed an electrode 6 for placing the semiconductor wafer 3 .
  • the wafer carried into the processing chamber via the wafer-transfer system 4 is placed on the electrode 6 and held by the electrode 6 .
  • the electrode 6 is connected to an RF power supply 8 through a matching network 7 for the purpose of controlling the ion energy incident on the semiconductor wafer 3 during plasma processing.
  • An etching gas is introduced into the chamber through an inlet 5 .
  • An RF induction coil 10 is disposed in a position confronting the wafer via an insulator 9 formed of quartz or alumina ceramics, on a plane facing the wafer in the atmospheric side of the insulator 9 .
  • the RF induction coil 10 is arranged so that its center corresponds to the center of the semiconductor wafer 3 .
  • the RF induction coil 10 is composed of plural identical coil elements, and the conducting areas of the coil elements are disposed on a surface of a substantially annular (ring-like) insulating member 11 .
  • One end of each of the plural coil elements is connected to the RF power supply 13 via a matching network 12 , and the other end is connected to ground potential, in the exact same manner.
  • the insulating member 11 has a refrigerant passage not shown for cooling, and a fluid such as water, Fluorinert (registered trademark), air or nitrogen can be flown through the passage to cool the insulating member.
  • a fluid such as water, Fluorinert (registered trademark), air or nitrogen can be flown through the passage to cool the insulating member.
  • An inductively coupled plasma apparatus excites plasma by the RF current applied through the RF induction coil.
  • the inductance is increased and the current is reduced but the voltage is raised.
  • the voltage is lowered but the current is raised.
  • the preferable levels of current and voltage are determined not only from the viewpoint of uniformity, stability and generation efficiency of plasma but also from the viewpoint of mechanical engineering.
  • the increase of current may cause problems such as heating and the loss caused thereby, or the current resistance of a variable capacitor used in the matching network.
  • the increase of voltage may cause problems such as abnormal discharge, undesirable affect to plasma, or the voltage resistance of the variable capacitor. Therefore, the designer must determine the shape of the coil and the number of turns thereof considering the current and voltage resistance of electric elements such as variable capacitors in the matching network, and the problems related to cooling the coils.
  • FIG. 4 When four such-loop coils are prepared and arranged at 90° equal angular intervals, an arrangement as illustrated in FIG. 4 is provided. If the four coil ends disposed at the center are gathered as one input terminal and connected to the RF power supply, and the four outer coil terminals functioning as output terminals are set to ground potential, the arrangement functions as an induction coil. The use of such coil may cause plasma to be somewhat distorted, but will not cause the plasma to be biased. Theoretically, the shape of the plasma will approximate a true circle by increasing the number of coil elements to more than four, but since this causes complication, two to four coil elements are often used in actual application.
  • Non-patent document 2 discloses a plasma apparatus having four coil circuits disposed at 90° intervals, similar to the arrangement of FIG. 4 . The same document discloses that by connecting four coil circuits of the same shape in parallel, the inductance is reduced to 57% that of a single coil circuit.
  • equation Z 2 ⁇ f ⁇ L in which f represents the power supply frequency, the reduction of inductance causes the voltage generated in the coil to be reduced and the current to be increased when the same power is supplied.
  • an induction coil is designed so that the inductance of the induction coil is set to a certain value (for example, 1 ⁇ H) from the viewpoint of current and voltage resistance of the matching network.
  • a certain value for example, 1 ⁇ H
  • the total number of turns of the coil is, of course, one.
  • the inductance is 0.57 ⁇ H and the total number of turns is four.
  • the present invention discloses an advantageous induction coil structure regarding the parallel coil arrangement with a large number of turns.
  • a ring-like insulating member with a quadrangle cross section (insulating ring) 11 is prepared.
  • the inner plane of the insulating ring 11 is defined as plane a, the bottom plane as plane b, the outer plane as plane c and the top plane as plane d.
  • the insulating ring 11 is divided at 90° intervals into four zones, and each zone is defined as zone A, zone B, zone C and zone D, respectively as shown in FIG. 5 .
  • four circuits of coil elements 101 are used.
  • a coil element 101 - 1 of circuit 1 starts at input terminal 101 - 1 in, passes plane a in zone A, and thereafter, passes planes b and c to reach an output terminal 101 - 1 out, according to which a loop of 270° (3 ⁇ 4 turn) in total is formed.
  • the coil element of circuit 2 is displaced by 90° in the clockwise direction from the first coil circuit, and starts at an input terminal and passes plane a in zone B, plane b in zone C and plane c in zone D to form a total of 3 ⁇ 4 turn.
  • a coil element 101 - 3 of circuit 3 and a coil element 101 - 4 of circuit 4 are each displaced by 90° in the clockwise direction from the preceding circuit.
  • FIG. 6 is a perspective view showing the actual coil formed in this manner (embodiment 3). Unlike the example shown in FIG. 4 where the coil elements are disposed flatly, the present embodiment utilizes space advantageously and successfully creates a compact induction coil 10 . By adopting this induction coil to the plasma processing apparatus illustrated in FIG. 1 , it is possible to provide a plasma processing apparatus having advantageous circumferential plasma uniformity.
  • each coil element is passed via adjacent planes, from plane a to plane b to plane c, but it is also possible to have the coil pass via plane a to plane c and then to plane b, as shown in Table 2. It may seem irrational to pass the coil from plane a directly to plane c, but since these planes are in confronting relations, the coil can be passed through a bore pierced through the insulating ring 11 .
  • circuit 1 is started at input terminal 101 - 1 in and extends via plane a, plane b, plane c and plane d and terminates at output terminal 101 - 1 out
  • circuits 2 , 3 and 4 are disposed in a similar manner but displaced by 90°, respectively, according to which an induction coil with a total of four turns using four circuits (one turn per circuit) is formed (which is considered to be substantially similar to the example of FIG. 4 ).
  • each plane had a 90-degree loop per circuit arranged thereto, but according to the present embodiment, a plane has two 180° loop circuits, and a single circuit uses three planes to turn 540°, according to which the number of turns is increased.
  • a coil element 101 - 1 of circuit 1 is disposed on plane a in zones A and B, plane b in zones C and D, and plane c in zones A and B, transferring from one plane to another after forming 180° loops.
  • the coil element 101 - 1 of circuit 1 shares planes a and c with coil circuit element 2 in zone B, shares plane b with coil circuit element 4 in zone C, shares plane b with circuit 2 in zone D, and shares planes a and c with circuit 4 in zone A, each sharing 90°.
  • the total number of turns of the coils is six.
  • FIG. 9 (embodiment 6) and table 5 are referred to in explaining a modified example of FIG. 8 .
  • This embodiment forms the 180° loop to only a certain plane.
  • the 180° loop is disposed only on plane b and 90° loops are disposed on planes a and c.
  • circuit 1 shares plane b with circuit 4 in zone B and with circuit 2 in zone C, each for 90°.
  • planes a and c each zone is used independently by each circuit. Since the coupling property of the induction coil to plasma is higher when the coil is closer to the plasma, in a plasma apparatus of the type shown in FIG.
  • plane b bottom plane
  • three planes are used to dispose four single-turn circuits, so there are four turns in total.
  • an insulating ring 11 having a polygonal cross-section with more than four sides.
  • This embodiment 7 will be illustrated with reference to FIG. 10 and table 6.
  • the present embodiment uses an insulating ring 11 with an octagonal cross-section.
  • the surfaces are denoted as planes a through h as illustrated, and through use of seven planes excluding the upper plane, plane h, coil loops are arranged in a manner similar to the embodiment of FIG.
  • coil element of circuit 1 is first disposed on plane a in zone A and extended via planes b, c, d, e, f and g transiting planes every 90°
  • the coil element of circuit 2 is first disposed on plane a in zone B and extended via planes b, c, d, e, f and g transiting planes every 90°, thereby forming loops.
  • a single coil element circuit constitutes 7/4 turns, so by disposing four circuits, the induction coil totals in seven turns.
  • FIG. 11 and table 7 illustrate embodiment 8 in which three coil element circuits are used.
  • one coil element is disposed to transfer from plane a to plane b and then to plane c forming 120° loops on each plane.
  • a single coil element circuit forms a single turn, so by disposing three coil circuits, an induction coil having three turns in total is provided.
  • an induction coil it is advantageous to use an insulating ring 11 having a polygonal cross-section.
  • the coil elements can be formed of copper sheets or the like, and can be secured via screws onto the insulating ring 11 to maintain shape. It is also possible to form coil elements 101 by depositing plating on the surface of the insulating ring 11 and forming the coil pattern via etching or the like. There is much heat generated in the induction coil since a large amount of current is passed through. If the insulation coil is formed of a single continuous spiral coil with a simple structure, it is possible to cool the coil by forming a refrigerant passage in the coil, for example.
  • the entire complex coil arrangement can be cooled effectively by simply circulating a refrigerant in the interior of the insulating ring 11 .
  • coil loops of given angles were disposed on the planes of the insulating ring 11 having a polygonal cross-section.
  • the insulating ring 11 it is possible to form the insulating ring 11 to have a round cross-section, which is an ultimate polygon.
  • the planes it is not possible to denote the planes as plane a, plane b and so on as in the case of previous embodiments. Therefore, as illustrated in FIGS. 12 and 13 (embodiment 9), the coil elements 101 can be arranged in the form of a toroidal coil in which each coil is displaced from the other coil by given angles.
  • the coil element 101 runs smoothly on the surface of the annular ring and disposed in a three-dimensional fashion.
  • the induction coil can be formed compactly according to the present invention, so it is possible to facilitate the control of plasma distribution, for example, by disposing two induction coils 10 A and 10 B where one is disposed concentrically outward of the other, and by controlling the current ratio supplied thereto.
  • the present invention does not necessarily require the insulating ring 11 , and as long as the shape of the induction coil is maintained, it is possible to omit the insulating ring and to dispose the coil elements on a surface of a virtual annular ring.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
US10/921,341 2004-04-13 2004-08-19 Plasma processing apparatus Abandoned US20050224182A1 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/567,137 US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus
US12/783,686 US8231759B2 (en) 2004-04-13 2010-05-20 Plasma processing apparatus
US13/545,422 US20120273136A1 (en) 2004-04-13 2012-07-10 Plasma Processing Apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004-117894 2004-04-13
JP2004117894A JP4657620B2 (ja) 2004-04-13 2004-04-13 プラズマ処理装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/567,137 Continuation US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus

Publications (1)

Publication Number Publication Date
US20050224182A1 true US20050224182A1 (en) 2005-10-13

Family

ID=35059360

Family Applications (4)

Application Number Title Priority Date Filing Date
US10/921,341 Abandoned US20050224182A1 (en) 2004-04-13 2004-08-19 Plasma processing apparatus
US12/567,137 Expired - Fee Related US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus
US12/783,686 Expired - Fee Related US8231759B2 (en) 2004-04-13 2010-05-20 Plasma processing apparatus
US13/545,422 Abandoned US20120273136A1 (en) 2004-04-13 2012-07-10 Plasma Processing Apparatus

Family Applications After (3)

Application Number Title Priority Date Filing Date
US12/567,137 Expired - Fee Related US7744721B2 (en) 2004-04-13 2009-09-25 Plasma processing apparatus
US12/783,686 Expired - Fee Related US8231759B2 (en) 2004-04-13 2010-05-20 Plasma processing apparatus
US13/545,422 Abandoned US20120273136A1 (en) 2004-04-13 2012-07-10 Plasma Processing Apparatus

Country Status (2)

Country Link
US (4) US20050224182A1 (https=)
JP (1) JP4657620B2 (https=)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060260937A1 (en) * 2005-05-20 2006-11-23 Applied Materials, Inc. Interior antenna for substrate processing chamber
US20090278459A1 (en) * 2007-02-16 2009-11-12 Foi Corporation Induction coil, a plasma generator and a plasma generating method
US20100059499A1 (en) * 2007-03-05 2010-03-11 Thomas Lewin Heater element as well as an insert for electrical furnaces
US20100066251A1 (en) * 2006-11-28 2010-03-18 Samco Inc. Plasma processing apparatus
US20110253310A1 (en) * 2010-04-20 2011-10-20 Neil Martin Paul Benjamin Methods and apparatus for an induction coil arrangement in a plasma processing system
US20120007503A1 (en) * 2010-07-06 2012-01-12 Samsung Electronics Co., Ltd. Plasma Generating Apparatus
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
WO2016201612A1 (en) * 2015-06-15 2016-12-22 Applied Materials, Inc. Source rf power split inner coil to improve bcd and etch depth performance
TWI621376B (zh) * 2010-09-28 2018-04-11 Tokyo Electron Ltd Plasma processing device (2)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置
CN101136279B (zh) 2006-08-28 2010-05-12 北京北方微电子基地设备工艺研究中心有限责任公司 电感耦合线圈及电感耦合等离子体装置
KR100968132B1 (ko) * 2008-02-29 2010-07-06 (주)얼라이드 테크 파인더즈 안테나 및 이를 구비한 반도체 장치
JP5155235B2 (ja) * 2009-01-15 2013-03-06 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ生成装置
US20110284167A1 (en) 2009-01-15 2011-11-24 Ryoji Nishio Plasma processing equipment and plasma generation equipment
JP2013182966A (ja) * 2012-03-01 2013-09-12 Hitachi High-Technologies Corp プラズマ処理装置及びプラズマ処理方法
JP5800937B2 (ja) * 2014-03-14 2015-10-28 東京エレクトロン株式会社 プラズマ処理装置
CN109887872B (zh) * 2019-03-29 2024-11-15 华南理工大学 用于制备凹槽栅增强型器件的精准刻蚀装置及其刻蚀方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5554223A (en) * 1993-03-06 1996-09-10 Tokyo Electron Limited Plasma processing apparatus with a rotating electromagnetic field
US5681418A (en) * 1994-12-06 1997-10-28 Fujitsu Limited Plasma processing with inductive coupling
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US7088047B2 (en) * 2002-07-26 2006-08-08 Plasmart Co. Ltd. Inductively coupled plasma generator having low aspect ratio

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0379828B1 (en) 1989-01-25 1995-09-27 International Business Machines Corporation Radio frequency induction/multipole plasma processing tool
JP3165941B2 (ja) 1993-10-04 2001-05-14 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US5998933A (en) * 1998-04-06 1999-12-07 Shun'ko; Evgeny V. RF plasma inductor with closed ferrite core
WO2002015650A2 (en) 2000-08-11 2002-02-21 Applied Materials, Inc. Externally excited torroidal plasma source
KR100404723B1 (ko) * 2001-04-26 2003-11-07 주식회사 플라즈마트 낮은 종횡비를 갖는 유도결합형 플라즈마 발생장치
JP3787079B2 (ja) * 2001-09-11 2006-06-21 株式会社日立製作所 プラズマ処理装置
JP4657620B2 (ja) * 2004-04-13 2011-03-23 株式会社日立ハイテクノロジーズ プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4990229A (en) * 1989-06-13 1991-02-05 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5554223A (en) * 1993-03-06 1996-09-10 Tokyo Electron Limited Plasma processing apparatus with a rotating electromagnetic field
US5681418A (en) * 1994-12-06 1997-10-28 Fujitsu Limited Plasma processing with inductive coupling
US5753044A (en) * 1995-02-15 1998-05-19 Applied Materials, Inc. RF plasma reactor with hybrid conductor and multi-radius dome ceiling
US7088047B2 (en) * 2002-07-26 2006-08-08 Plasmart Co. Ltd. Inductively coupled plasma generator having low aspect ratio

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060260937A1 (en) * 2005-05-20 2006-11-23 Applied Materials, Inc. Interior antenna for substrate processing chamber
US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
US20120211358A1 (en) * 2005-05-20 2012-08-23 Applied Materials, Inc. Interior antenna for substrate processing chamber
TWI422287B (zh) * 2006-11-28 2014-01-01 Samco Inc Plasma processing device
US20100066251A1 (en) * 2006-11-28 2010-03-18 Samco Inc. Plasma processing apparatus
US8314560B2 (en) 2006-11-28 2012-11-20 Samco Inc. Plasma processing apparatus
CN103347360A (zh) * 2006-11-28 2013-10-09 莎姆克株式会社 等离子处理装置
US20090278459A1 (en) * 2007-02-16 2009-11-12 Foi Corporation Induction coil, a plasma generator and a plasma generating method
US8247977B2 (en) * 2007-02-16 2012-08-21 Lam Research Corporation Induction coil, a plasma generator and a plasma generating method
US20100059499A1 (en) * 2007-03-05 2010-03-11 Thomas Lewin Heater element as well as an insert for electrical furnaces
US9144114B2 (en) * 2007-03-05 2015-09-22 Sandvik Intellectual Property Ab Heater element as well as an insert for electrical furnaces
US20110253310A1 (en) * 2010-04-20 2011-10-20 Neil Martin Paul Benjamin Methods and apparatus for an induction coil arrangement in a plasma processing system
US20120007503A1 (en) * 2010-07-06 2012-01-12 Samsung Electronics Co., Ltd. Plasma Generating Apparatus
TWI621376B (zh) * 2010-09-28 2018-04-11 Tokyo Electron Ltd Plasma processing device (2)
US8970114B2 (en) 2013-02-01 2015-03-03 Lam Research Corporation Temperature controlled window of a plasma processing chamber component
WO2016201612A1 (en) * 2015-06-15 2016-12-22 Applied Materials, Inc. Source rf power split inner coil to improve bcd and etch depth performance
CN107849694A (zh) * 2015-06-15 2018-03-27 应用材料公司 用于改良bcd及蚀刻深度性能的源rf功率分裂式内线圈
US10211030B2 (en) 2015-06-15 2019-02-19 Applied Materials, Inc. Source RF power split inner coil to improve BCD and etch depth performance

Also Published As

Publication number Publication date
JP4657620B2 (ja) 2011-03-23
US20100263796A1 (en) 2010-10-21
US20100078130A1 (en) 2010-04-01
US8231759B2 (en) 2012-07-31
JP2005303053A (ja) 2005-10-27
US7744721B2 (en) 2010-06-29
US20120273136A1 (en) 2012-11-01

Similar Documents

Publication Publication Date Title
US7744721B2 (en) Plasma processing apparatus
KR101870791B1 (ko) 플라즈마 처리 장치
US9953811B2 (en) Plasma processing method
US10020167B2 (en) Plasma processing apparatus
US9627181B2 (en) Plasma processing apparatus
KR102031198B1 (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
TWI540942B (zh) Plasma processing device and plasma processing method
KR20110038150A (ko) 필드 강화 유도 결합 플라즈마 반응기
US20110097901A1 (en) Dual mode inductively coupled plasma reactor with adjustable phase coil assembly
TWI466186B (zh) 消除感應耦合電漿反應器中之ｍ形蝕刻速率分佈之方法
JP6062461B2 (ja) プラズマ処理装置
JP2011040786A (ja) プラズマ処理装置
TW202516572A (zh) 用於大面積基板的浸入式電漿源和處理腔室
WO2007062605A1 (en) Plasma source

Legal Events

Date Code Title Description
AS Assignment

Owner name: HITACHI HIGH-TECHNOLOGIES CORPORATION, JAPAN

Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:EDAMURA, MANABU;MIYA, GO;YOSHIOKA, KEN;REEL/FRAME:015715/0219;SIGNING DATES FROM 20040709 TO 20040802

STCB Information on status: application discontinuation

Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION