JP2005302963A - 露光装置 - Google Patents

露光装置 Download PDF

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Publication number
JP2005302963A
JP2005302963A JP2004116017A JP2004116017A JP2005302963A JP 2005302963 A JP2005302963 A JP 2005302963A JP 2004116017 A JP2004116017 A JP 2004116017A JP 2004116017 A JP2004116017 A JP 2004116017A JP 2005302963 A JP2005302963 A JP 2005302963A
Authority
JP
Japan
Prior art keywords
light
exposure apparatus
reflectance
layer
reflective
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2004116017A
Other languages
English (en)
Japanese (ja)
Other versions
JP2005302963A5 (enExample
Inventor
Takeshi Yamamoto
武 山本
Yutaka Watanabe
豊 渡辺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2004116017A priority Critical patent/JP2005302963A/ja
Priority to US11/101,277 priority patent/US7102734B2/en
Publication of JP2005302963A publication Critical patent/JP2005302963A/ja
Publication of JP2005302963A5 publication Critical patent/JP2005302963A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • G03F7/70958—Optical materials or coatings, e.g. with particular transmittance, reflectance or anti-reflection properties
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Theoretical Computer Science (AREA)
  • Epidemiology (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
JP2004116017A 2004-04-09 2004-04-09 露光装置 Pending JP2005302963A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2004116017A JP2005302963A (ja) 2004-04-09 2004-04-09 露光装置
US11/101,277 US7102734B2 (en) 2004-04-09 2005-04-07 Exposure apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004116017A JP2005302963A (ja) 2004-04-09 2004-04-09 露光装置

Publications (2)

Publication Number Publication Date
JP2005302963A true JP2005302963A (ja) 2005-10-27
JP2005302963A5 JP2005302963A5 (enExample) 2007-06-07

Family

ID=35060196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004116017A Pending JP2005302963A (ja) 2004-04-09 2004-04-09 露光装置

Country Status (2)

Country Link
US (1) US7102734B2 (enExample)
JP (1) JP2005302963A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510688A (ja) * 2012-01-19 2015-04-09 スプリヤ ジャイスワル リソグラフィ及び他の用途における極端紫外線放射で使用する材料、成分及び方法
WO2015140924A1 (ja) * 2014-03-18 2015-09-24 エヌ・ティ・ティ・アドバンステクノロジ株式会社 多層膜反射鏡、分光装置、および高次高調波の分光方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008040265A1 (de) 2008-07-09 2010-01-14 Carl Zeiss Smt Ag Reflektives optisches Element und Verfahren zu seiner Herstellung
CN104749327B (zh) * 2015-04-21 2016-07-06 中国科学院长春光学精密机械与物理研究所 一种用于碳污染实验获取euv辐射的真空隔离滤光装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01187818A (ja) * 1988-01-22 1989-07-27 Canon Inc 反射型マスクならびにこれを用いた露光装置と露光方法
JPH06124876A (ja) * 1992-10-12 1994-05-06 Hitachi Ltd 光学素子及び光学素子の製造方法
JPH07147229A (ja) * 1994-08-04 1995-06-06 Canon Inc Ｘ線投影露光装置
JP2001013297A (ja) * 1999-06-30 2001-01-19 Nikon Corp 反射光学素子および露光装置
JP2003303756A (ja) * 2002-04-09 2003-10-24 Sony Corp 極短紫外光の反射体
JP2004103824A (ja) * 2002-09-10 2004-04-02 Nikon Corp 基板搬送方法、基板搬送装置及び露光装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3856054T2 (de) * 1987-02-18 1998-03-19 Canon K.K., Tokio/Tokyo Reflexionsmaske
JP2545905B2 (ja) 1987-12-29 1996-10-23 キヤノン株式会社 反射型マスクならびにこれを用いた露光方法
US6228512B1 (en) * 1999-05-26 2001-05-08 The Regents Of The University Of California MoRu/Be multilayers for extreme ultraviolet applications
JP2001057328A (ja) * 1999-08-18 2001-02-27 Nikon Corp 反射マスク、露光装置および集積回路の製造方法
EP1260861A1 (en) * 2001-05-21 2002-11-27 ASML Netherlands B.V. Method of manufacturing a reflector, reflector manufactured thereby, phase shift mask and lithographic apparatus making use of them
EP1333323A3 (en) * 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01187818A (ja) * 1988-01-22 1989-07-27 Canon Inc 反射型マスクならびにこれを用いた露光装置と露光方法
JPH06124876A (ja) * 1992-10-12 1994-05-06 Hitachi Ltd 光学素子及び光学素子の製造方法
JPH07147229A (ja) * 1994-08-04 1995-06-06 Canon Inc Ｘ線投影露光装置
JP2001013297A (ja) * 1999-06-30 2001-01-19 Nikon Corp 反射光学素子および露光装置
JP2003303756A (ja) * 2002-04-09 2003-10-24 Sony Corp 極短紫外光の反射体
JP2004103824A (ja) * 2002-09-10 2004-04-02 Nikon Corp 基板搬送方法、基板搬送装置及び露光装置

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015510688A (ja) * 2012-01-19 2015-04-09 スプリヤ ジャイスワル リソグラフィ及び他の用途における極端紫外線放射で使用する材料、成分及び方法
WO2015140924A1 (ja) * 2014-03-18 2015-09-24 エヌ・ティ・ティ・アドバンステクノロジ株式会社 多層膜反射鏡、分光装置、および高次高調波の分光方法
JPWO2015140924A1 (ja) * 2014-03-18 2017-04-06 エヌ・ティ・ティ・アドバンステクノロジ株式会社 多層膜反射鏡、分光装置、および高次高調波の分光方法

Also Published As

Publication number Publication date
US20050225741A1 (en) 2005-10-13
US7102734B2 (en) 2006-09-05

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