JP2005298616A - 光半導体封止用樹脂組成物及びこれを用いた光半導体装置 - Google Patents
光半導体封止用樹脂組成物及びこれを用いた光半導体装置 Download PDFInfo
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- JP2005298616A JP2005298616A JP2004114978A JP2004114978A JP2005298616A JP 2005298616 A JP2005298616 A JP 2005298616A JP 2004114978 A JP2004114978 A JP 2004114978A JP 2004114978 A JP2004114978 A JP 2004114978A JP 2005298616 A JP2005298616 A JP 2005298616A
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Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
(A)エポキシ樹脂
(B)硬化剤
(C)硬化促進剤
(D)下記の一般式(I)で表される有機リン化合物
R2は水素原子、メチル基もしくはメトキシ基を表し;
R3およびR4は水素原子、−OH基もしくはメトキシ基を表し;
R5 は水素原子またはメチル基を表し:
R6とR7は、他と独立して、水素原子もしくは炭素原子数1〜9のアルキル基を表し;
そしてnは1〜3を表す。〕
上記エポキシ樹脂(A成分)としては、いわゆるエポキシ樹脂であれば特に制限されるものではないが、着色の少ないものを用いるのが好ましい。例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、フェノールまたはクレゾールノボラック型エポキシ樹脂、脂環式エポキシ樹脂、トリグリシジルイソシアネート、ヒダントインエポキシ等の含複素環エポキシ樹脂、水添加ビスフェノールA型エポキシ樹脂、脂肪族系エポキシ樹脂、グリシジルエーテル型エポキシ樹脂等があげられる。これらは単独でもしくは併せて用いられる。
[実施例1〜10、比較例1〜8]
下記の表1〜3に示す各原料を同表に示す割合で配合し(配合数値の単位は重量部である。)、加温(80℃)下、撹拌することにより目的とする液状サンプルであるa液およびb液をそれぞれ準備した。そして、a液およびb液を同表に示す配合割合で混合した後、減圧脱泡することにより液状の光半導体封止用エポキシ樹脂組成物を得た。ついで、上記液状の光半導体封止用エポキシ樹脂組成物をφ50mm×1mmの金型に注型し、硬化物を得た。
[a液におけるエポキシ樹脂と酸化防止剤の相溶性もしくは硬化物の外観]
上記の方法で得られたa液および硬化物を目視で観察した際、濁りおよび析出物が認められるものを「×」、全く認められないものを「○」として評価した。
[硬化直後の光透過性]
上記の製法で得られた硬化物を分光光度計(日立製:U-2001)にセットし、350nm、400nm、800nmの波長における透過率(%)を測定・評価した。
[硬化物のUV〜nUV安定性]
上記の製法で得られた硬化体を26W/m2(300nm〜400nm)の照度、温度50℃の促進耐光試験機(スガ試験機製:サンテスターXT750)に100時間放置した後、上記と同様の方法で透過率(%)を測定・評価した。
[硬化物の熱安定性]
上記の製法で得られた硬化物を150℃のギヤオーブンに72時間放置した後、上記と同様の方法で透過率(%)を測定・評価した。
Claims (5)
- 一般式(I)で表される有機リン化合物のR1 が炭素原子数1〜4のアルキル基であるあることを特徴とする請求項1記載の光半導体封止用樹脂組成物。
- 一般式(I)で表される有機リン化合物が、ビス(2,4−ジ−tert-ブチル−6−メチルフェニル)エチルホスファイトであることを特徴とする請求項2記載の光半導体封止用樹脂組成物。
- (D)成分の含有量が、(A)成分100重量部に対して0.1重量部〜10重量部であることを特徴とする請求項1、2又は3記載の光半導体封止用樹脂組成物。
- 請求項1〜4のいずれか一つに記載の光半導体樹脂組成物を用いて光半導体素子を封止してなる光半導体装置。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004114978A JP4473030B2 (ja) | 2004-04-09 | 2004-04-09 | 光半導体封止用樹脂組成物及びこれを用いた光半導体装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004114978A JP4473030B2 (ja) | 2004-04-09 | 2004-04-09 | 光半導体封止用樹脂組成物及びこれを用いた光半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005298616A true JP2005298616A (ja) | 2005-10-27 |
| JP4473030B2 JP4473030B2 (ja) | 2010-06-02 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9464186B2 (en) | 2011-04-08 | 2016-10-11 | Jx Nippon Oil & Energy Corporation | Resin composition, hardened coating films therefrom, and photosemiconductor device using same |
| JP2023026856A (ja) * | 2021-08-16 | 2023-03-01 | 日東電工株式会社 | 光半導体封止用樹脂組成物、光半導体封止用樹脂成形物、光半導体封止材および光半導体装置 |
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2004
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9464186B2 (en) | 2011-04-08 | 2016-10-11 | Jx Nippon Oil & Energy Corporation | Resin composition, hardened coating films therefrom, and photosemiconductor device using same |
| JP2023026856A (ja) * | 2021-08-16 | 2023-03-01 | 日東電工株式会社 | 光半導体封止用樹脂組成物、光半導体封止用樹脂成形物、光半導体封止材および光半導体装置 |
| US20230071071A1 (en) * | 2021-08-16 | 2023-03-09 | Nitto Denko Corporation | Resin composition for sealing optical semiconductor, resin molded product for sealing optical semiconductor, optical semiconductor sealing material, and optical semiconductor device |
| JP7713334B2 (ja) | 2021-08-16 | 2025-07-25 | 日東電工株式会社 | 光半導体封止用樹脂組成物、光半導体封止用樹脂成形物、光半導体封止材および光半導体装置 |
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| JP4473030B2 (ja) | 2010-06-02 |
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