JP2005277029A5 - - Google Patents

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Publication number
JP2005277029A5
JP2005277029A5 JP2004087077A JP2004087077A JP2005277029A5 JP 2005277029 A5 JP2005277029 A5 JP 2005277029A5 JP 2004087077 A JP2004087077 A JP 2004087077A JP 2004087077 A JP2004087077 A JP 2004087077A JP 2005277029 A5 JP2005277029 A5 JP 2005277029A5
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JP
Japan
Prior art keywords
group
general formula
field effect
effect transistor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2004087077A
Other languages
English (en)
Japanese (ja)
Other versions
JP4401836B2 (ja
JP2005277029A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2004087077A priority Critical patent/JP4401836B2/ja
Priority claimed from JP2004087077A external-priority patent/JP4401836B2/ja
Priority to PCT/JP2005/005306 priority patent/WO2005091394A1/en
Priority to US10/583,126 priority patent/US7586117B2/en
Publication of JP2005277029A publication Critical patent/JP2005277029A/ja
Publication of JP2005277029A5 publication Critical patent/JP2005277029A5/ja
Priority to US12/493,052 priority patent/US7791069B2/en
Application granted granted Critical
Publication of JP4401836B2 publication Critical patent/JP4401836B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2004087077A 2004-03-24 2004-03-24 電界効果型トランジスタおよびその製造方法 Expired - Fee Related JP4401836B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004087077A JP4401836B2 (ja) 2004-03-24 2004-03-24 電界効果型トランジスタおよびその製造方法
PCT/JP2005/005306 WO2005091394A1 (en) 2004-03-24 2005-03-16 Field effect transistor and method of producing same
US10/583,126 US7586117B2 (en) 2004-03-24 2005-03-16 Field effect transistor and method of producing same
US12/493,052 US7791069B2 (en) 2004-03-24 2009-06-26 Field effect transistor and method of producing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004087077A JP4401836B2 (ja) 2004-03-24 2004-03-24 電界効果型トランジスタおよびその製造方法

Publications (3)

Publication Number Publication Date
JP2005277029A JP2005277029A (ja) 2005-10-06
JP2005277029A5 true JP2005277029A5 (enExample) 2006-02-16
JP4401836B2 JP4401836B2 (ja) 2010-01-20

Family

ID=34993994

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2004087077A Expired - Fee Related JP4401836B2 (ja) 2004-03-24 2004-03-24 電界効果型トランジスタおよびその製造方法

Country Status (3)

Country Link
US (2) US7586117B2 (enExample)
JP (1) JP4401836B2 (enExample)
WO (1) WO2005091394A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005079203A (ja) * 2003-08-28 2005-03-24 Canon Inc 電界効果型トランジスタおよびその製造方法
US7491967B2 (en) * 2004-03-10 2009-02-17 Canon Kabushiki Kaisha Field effect transistor, method of producing the same, and method of producing laminated member
US7511296B2 (en) 2005-03-25 2009-03-31 Canon Kabushiki Kaisha Organic semiconductor device, field-effect transistor, and their manufacturing methods
JP5335228B2 (ja) * 2006-12-27 2013-11-06 キヤノン株式会社 新規化合物および有機半導体素子の製造方法
WO2008108442A1 (ja) * 2007-03-07 2008-09-12 Hiroshima University 新規ポルフィラジン誘導体およびその中間体、新規ポルフィラジン誘導体およびその中間体の製造方法、並びにその利用
CN101855740A (zh) 2007-09-12 2010-10-06 富士胶片株式会社 制造脱取代的化合物的方法、有机半导体膜和其制造方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555568A (ja) 1991-08-28 1993-03-05 Asahi Chem Ind Co Ltd 有機薄膜トランジスタ
JPH05190877A (ja) 1991-11-29 1993-07-30 Matsushita Giken Kk ダイオード素子の製造方法
US5659181A (en) 1995-03-02 1997-08-19 Lucent Technologies Inc. Article comprising α-hexathienyl
JP2003304014A (ja) 2002-04-08 2003-10-24 Mitsubishi Chemicals Corp 有機電子デバイス及びその作製方法
JP2004006750A (ja) 2002-03-27 2004-01-08 Mitsubishi Chemicals Corp 有機半導体材料及び有機電子デバイス
US7193237B2 (en) * 2002-03-27 2007-03-20 Mitsubishi Chemical Corporation Organic semiconductor material and organic electronic device
JP4136630B2 (ja) 2002-12-03 2008-08-20 キヤノン株式会社 プラズマ処理装置
JP4612786B2 (ja) 2003-03-03 2011-01-12 キヤノン株式会社 有機電界効果型トランジスタの製造方法
US7094625B2 (en) 2003-03-31 2006-08-22 Canon Kabushiki Kaisha Field effect transistor and method of producing the same
DE602004030668D1 (de) 2003-04-01 2011-02-03 Canon Kk Organische halbleiteranordnung
JP2005079204A (ja) 2003-08-28 2005-03-24 Canon Inc 電界効果型トランジスタおよびその製造方法
JP4401826B2 (ja) * 2004-03-10 2010-01-20 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
US7491967B2 (en) 2004-03-10 2009-02-17 Canon Kabushiki Kaisha Field effect transistor, method of producing the same, and method of producing laminated member
JP4557755B2 (ja) 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法
JP4731840B2 (ja) 2004-06-14 2011-07-27 キヤノン株式会社 電界効果型トランジスタおよびその製造方法
US7511296B2 (en) 2005-03-25 2009-03-31 Canon Kabushiki Kaisha Organic semiconductor device, field-effect transistor, and their manufacturing methods
US7695999B2 (en) 2005-09-06 2010-04-13 Canon Kabushiki Kaisha Production method of semiconductor device
US7435989B2 (en) 2005-09-06 2008-10-14 Canon Kabushiki Kaisha Semiconductor device with layer containing polysiloxane compound

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